HK1128061B - Projection optical system, exposure device and method, mask and display manufacturing method - Google Patents

Description

Projection optical system, exposure apparatus and method, mask and method for manufacturing display

Technical Field

The present invention relates to a projection optical system for projecting an image of a mask, a reticle, or the like on a substrate or the like, an exposure apparatus including the projection optical system, an exposure method using the exposure apparatus, a display manufacturing method using the exposure apparatus, a mask, and a mask manufacturing method.

Background

For example, in the manufacture of semiconductor devices, liquid crystal display devices, and the like, projection exposure apparatuses are used in which a mask (e.g., a reticle or a light shield) pattern is projected onto a plate (e.g., a glass plate or a semiconductor wafer) coated with a resist (resist) agent via a projection optical system. In a conventional multi-use projection exposure apparatus (stepper), each grating pattern is collectively exposed to each shot (shot) region on a light-sensing plate in a step and repeat manner. In recent years, instead of using 1 large projection optical system, a step and scan (step and scan) type projection exposure apparatus has been proposed in which a plurality of small partial projection optical systems having a magnification of equal magnification are arranged in a plurality of rows at a specific interval along a scanning direction, and each mask pattern is exposed on a light-sensitive plate by the respective partial projection optical systems while scanning the mask and the light-sensitive plate (see japanese patent application laid-open No. 5-161588).

Disclosure of Invention

However, in recent years, the photosensitive web has been increasingly large in size, and photosensitive webs of more than 2m square have come to be used. Therefore, when the exposure apparatus of the step-and-scan type is used to expose a large-sized photosensitive drum, a part of the projection optical system has a magnification of the same magnification, and thus the mask needs to be enlarged. Further, since the flatness of the mask substrate must be maintained, the cost increases as the size of the mask increases. In addition, in order to form a normal TFT (Thin Film Transistor) portion, a mask of 4 to 5 layers is required, and thus a large cost is required.

An object of the present invention is to provide a projection optical system having a magnification and good optical performance, an exposure apparatus including the projection optical system, an exposure method using the exposure apparatus, and a method of manufacturing a display using the exposure apparatus. Another object of the present invention is to provide a mask used in an exposure apparatus including a projection optical system having a magnification and a method for manufacturing the same.

According to embodiment 1 of the present invention, there is provided an exposure apparatus capable of exposing an image of a1 st object to a2 nd object while moving the 1 st object and the 2 nd object along a scanning direction, the exposure apparatus including a1 st projection optical system and a2 nd projection optical system arranged at a predetermined interval in a non-scanning direction intersecting the scanning direction and each having a magnification; and a1 st stage that holds the 1 st object, the 1 st object having a1 st pattern region and a2 nd pattern region provided at the predetermined interval in the non-scanning direction, and a3 rd pattern region between the 1 st pattern region and the 2 nd pattern region, and the 1 st stage being movable in the scanning direction and the non-scanning direction; a2 nd stage which holds the 2 nd object and is movable in the scanning direction and the non-scanning direction; and a control unit for controlling the movement of the 1 st stage and the 2 nd stage, wherein the control unit performs the following control: controlling the movement of the 1 st stage and the 2 nd stage by causing the 1 st projection optical system to project an enlarged image of the 1 st pattern region onto a1 st region of the 2 nd object and causing the 2 nd projection optical system to project an enlarged image of the 2 nd pattern region onto a2 nd region spaced apart from the 1 st region of the 2 nd object by the predetermined interval in the non-scanning direction; and controlling the 1 st stage and the 2 nd stage to move by projecting the enlarged image of the 3 rd pattern region onto a3 rd region between the 1 st region and the 2 nd region of the 2 nd object by the 1 st projection optical system or the 2 nd projection optical system.

Further, according to embodiment 2 of the present invention, there is provided a method of manufacturing a display, including: an exposure step of exposing an enlarged image of the pattern on the mask onto a photosensitive substrate using the exposure apparatus; and a developing step of developing the photosensitive substrate exposed in the exposure step.

Further, according to embodiment 3 of the present invention, there is provided an exposure method for exposing an image of a1 st object to a2 nd object while moving the 1 st object and the 2 nd object in a scanning direction, the exposure method including the steps of: providing the 1 st object, wherein the 1 st object is formed with a1 st pattern region and a2 nd pattern region which are arranged at a predetermined interval in a non-scanning direction intersecting with a scanning direction, and is formed with a3 rd pattern region between the 1 st pattern region and the 2 nd pattern region; moving the 1 st object and the 2 nd object by projecting the enlarged image of the 1 st pattern region onto a1 st region of the 2 nd object and projecting the enlarged image of the 2 nd pattern region onto a2 nd region spaced apart from the 1 st region by the predetermined interval in the non-scanning direction; and projecting the enlarged image of the 3 rd pattern region onto a3 rd region between the 1 st region and the 2 nd region of the 2 nd object, thereby moving the 1 st object and the 2 nd object.

Further, according to embodiment 4 of the present invention, there is provided a method of manufacturing a display, including: an exposure step of exposing an enlarged image of the pattern on the mask onto a photosensitive substrate by using the above exposure method; and a developing step of developing the photosensitive substrate exposed in the exposure step.

Drawings

Fig. 1 is a structural diagram of a projection optical system of embodiment 1.

Fig. 2 is a structural diagram of a projection optical system of embodiment 2.

Fig. 3 is a structural diagram of a projection optical system of embodiment 3.

Fig. 4 is a structural diagram of an exposure apparatus of embodiment 4.

Fig. 5 is a configuration diagram of a projection optical system of the exposure apparatus of embodiment 4.

Fig. 6 is a diagram for explaining an exposure method using the exposure apparatus of embodiment 4.

Fig. 7 is a diagram for explaining an exposure method using the exposure apparatus of embodiment 4.

Fig. 8 is a diagram for explaining an exposure method using the exposure apparatus of embodiment 4.

Fig. 9 is a diagram for explaining an exposure method using the exposure apparatus of embodiment 4.

Fig. 10 is a diagram for explaining a structure of a mask used in an exposure apparatus including a projection optical system for forming an erect image according to an embodiment.

Fig. 11 is a diagram for explaining a structure of a mask used in an exposure apparatus including a projection optical system that forms an inverted image according to an embodiment.

Fig. 12 is a diagram illustrating a state in which a pattern of the mask according to the embodiment is transferred onto a plate by exposure.

Fig. 13 is a diagram for explaining a structure of a mask used in an exposure apparatus including a projection optical system that forms an erect image according to an embodiment.

Fig. 14 is a diagram for explaining a structure of a mask used in an exposure apparatus including a projection optical system that forms an inverted image according to an embodiment.

Fig. 15 is a diagram for explaining a structure of a mask used in an exposure apparatus including a projection optical system for forming an erect image according to an embodiment.

Fig. 16 is a diagram for explaining a structure of a mask used in an exposure apparatus including a projection optical system that forms an inverted image according to an embodiment.

Fig. 17 shows the shape of a reference mark according to an embodiment.

FIG. 18 is a diagram illustrating a method of manufacturing a photomask according to an embodiment.

FIG. 19 is a diagram illustrating a method of manufacturing a photomask according to an embodiment.

FIG. 20 is a diagram illustrating a method of manufacturing a photomask according to an embodiment.

Fig. 21 is a flowchart showing a method of manufacturing a liquid crystal display module as a micro device according to an embodiment of the present invention.

P, P1, P2, P3, P10: light-sensitive plate

PL, PL1, PL2, PL3, PL10, PL11, PL12, PL31, PL 32: projection optical system

M1, M2, M3, M10, M11, M12: light shield

CCM1, CCM2, CCM31, CCM 32: concave reflector

PG11, PG12, PG13, PG21, PG22, PG23, PG31, PG32, PG33, PG43, PG53, PG 63: lens group

FM11, FM12, FM13, FM21, FM22, FM23, FM33, FM 43: light path deflection surface

L101, L202, L203: positive meniscus lens

L102, L132, L151, L152, L153, L161, L163, L171, L173, L193, L212: negative meniscus lens

L111, L112, L113, L172, L181, L192: biconcave lens

L121, L122, L123, L141, L143, L162, L182, L191, L222: biconvex lens

L103, L131, L142, L183, L201, L211: plano-convex lens

FS: field aperture

IL: illumination optical system

MST: photomask platform

M: 1 st object

P101: region where transfer exposure has been performed on odd-column pattern region M101

P102: region where even-numbered pattern region M102 has been subjected to transfer exposure

P11-P15: regions where the common regions C1-C5 have been subjected to transfer exposure

PST: light sensitive plate platform

CONT: control unit

And (3) PLP: distance of separation between projection optical systems in Y-axis direction

EW: effective exposure width

M1A, M2A, M3A, M1B, M2B, M3B, M1C, M2C, M3C, M1D, M2D, M3D: illumination area

EA1, EA2, EA3, P1A, P2A, P3A, P1B, P2B, P3B, P1C, P2C, P3C, P1D, P2D, P3D: exposure area

M101: multiple odd column pattern regions

M102: multiple even-numbered column pattern regions

m101, m102, m101a, m102 a: fiducial marker

X1, X2: distance separating the reference mark from the pattern region

C1-C5: pattern data

C11, C12: common region

θ: direction of mask alignment

L1: arrangement interval between odd-numbered column pattern regions in Y-axis direction

L2: arrangement interval between even-numbered row pattern regions in Y-axis direction

S401 to S404: step (ii) of

Detailed Description

Hereinafter, a projection optical system according to an embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a structural diagram of a projection optical system of embodiment 1. In the following description, an XYZ rectangular coordinate system shown in each drawing is set, and the positional relationship of each member is described with reference to the XYZ rectangular coordinate system. In the XYZ rectangular coordinate system, the X axis and the Y axis are set parallel to a photosensitive web P used in an exposure apparatus described below, and the Z axis is set in a direction orthogonal to the photosensitive web P. The XYZ coordinate system in the figure is actually a plane in which the XY plane is set parallel to the horizontal plane, and the Z axis is set in the vertical direction. In the exposure apparatus described below, the direction in which the mask M and the plate P are moved (scanning direction) is set to the X-axis direction.

The projection optical system PL1 shown in fig. 1 is a catadioptric optical system that projects an image of a mask (1 st surface) M1 onto a light-sensing plate (2 nd surface) P1, and the projection optical system PL1 includes a concave mirror CCM1, a1 st lens group PG11, a1 st optical path deflecting surface FM11, a2 nd lens group PG21, a2 nd optical path deflecting surface FM21, and a3 rd lens group PG 31; the concave reflector CCM1 is disposed in the optical path between the mask M1 and the light-sensing plate P1; the 1 st lens group PG11 is disposed in the optical path between the mask M1 and the concave mirror CCM1, and has positive refractive power; the 1 st optical path deflecting surface FM11 is provided obliquely to the optical path between the 1 st lens group PG11 and the concave mirror CCM1 at an angle of 45 ° with respect to the mask M1 surface, and deflects the optical path by reflecting light traveling in the-Z axis direction from the 1 st lens group PG11 in the X axis direction; the 2 nd lens group PG21 is disposed in the optical path between the 1 st optical path deflecting surface FM11 and the concave mirror CCM 1; the 2 nd optical path deflecting surface FM21 is provided obliquely at an angle of 45 ° with respect to the mask M1 surface in the optical path between the 2 nd lens group PG21 and the light-receiving plate P1, and deflects the optical path by reflecting light traveling from the 2 nd lens group PG21 in the-X axis direction in the-Z axis direction; the 3 rd lens group PG31 is disposed in the optical path between the 2 nd optical path deflecting surface FM21 and the light-sensing plate P1, and has positive refractive power.

The 1 st lens group PG11 of the projection optical system PL1 is composed of a positive meniscus lens (positive meniscus lens) L101, a biconcave lens (biconvex lens) L111, a biconvex lens (biconvex lens) L121, which are concave on the mask M1 side, and a plano-convex lens (plane-convex lens) L131, which are flat on the mask M1 side. The 2 nd lens group PG21 is composed of a biconvex lens L141, a negative meniscus lens (negative meniscus lens) L151 facing concave on the 1 st optical path deflecting surface FM11 side, a negative meniscus lens L161 facing convex on the 1 st optical path deflecting surface FM11 side, and a negative meniscus lens L171 facing concave on the 1 st optical path deflecting surface FM11 side. The 3 rd lens group PG31 is composed of a biconcave lens L181, a biconvex lens L191, a plano-convex lens L201 facing the convex surface on the 2 nd optical path deflecting surface FM21 side, and a plano-concave lens L211 facing the concave surface on the light-sensing plate P1 side.

Next, a projection optical system PL2 according to embodiment 2 will be described with reference to fig. 2. Fig. 2 is a structural diagram of a projection optical system PL2 of embodiment 2.

The projection optical system PL2 shown in fig. 2 is a catadioptric optical system that projects an image of a mask (1 st surface) M2 onto a light-sensing plate (2 nd surface) P2, and the projection optical system PL2 includes a concave mirror CCM2, a1 st lens group PG12, a1 st optical path deflecting surface FM12, a2 nd lens group PG22, a2 nd optical path deflecting surface FM22, and a3 rd lens group PG 32; the concave reflector CCM2 is disposed in the optical path between the mask M2 and the light-sensing plate P2; the 1 st lens group PG12 is disposed in the optical path between the mask M2 and the concave mirror CCM2, and has positive refractive power; the 1 st optical path deflecting surface FM12 is provided obliquely to the optical path between the 1 st lens group PG12 and the concave mirror CCM2 at an angle of 45 ° with respect to the mask M2 surface, and deflects the optical path by reflecting light traveling in the-Z axis direction from the 1 st lens group PG12 in the X axis direction; the 2 nd lens group PG22 is disposed in the optical path between the 1 st optical path deflecting surface FM12 and the concave mirror CCM 2; the 2 nd optical path deflecting surface FM22 is provided obliquely at an angle of 45 ° with respect to the mask M2 surface in the optical path between the 2 nd lens group PG22 and the light-receiving plate P2, and deflects the optical path by reflecting light traveling from the 2 nd lens group PG22 in the-X axis direction in the-Z axis direction; the 3 rd lens group PG32 is disposed in the optical path between the 2 nd optical path deflecting surface FM22 and the light-sensing plate P2, and has positive refractive power.

The 1 st lens group PG12 is composed of a negative meniscus lens L102 facing concave on the mask M2 side, a biconcave lens L112, a biconvex lens L122, a negative meniscus lens L132 facing concave on the mask M2 side, and a plano-convex lens L142 facing flat on the mask M2 side. The 2 nd lens group PG22 is composed of a negative meniscus lens L152, a biconvex lens L162, a biconcave lens L172, and a biconvex lens L182 facing the convex surface on the 1 st optical path deflecting surface FM12 side. The 3 rd lens group PG3 is composed of a biconcave lens L192, a positive meniscus lens L202 facing concave on the 2 nd optical path deflecting surface FM22 side, a negative meniscus lens L212 facing convex on the 2 nd optical path deflecting surface FM22 side, and a biconvex lens L222.

Next, a projection optical system PL3 according to embodiment 3 will be described with reference to fig. 3. Fig. 3 is a structural diagram of a projection optical system PL3 of embodiment 3.

The projection optical system PL3 shown in fig. 3 includes a catadioptric optical system PL31 and a catadioptric optical system PL32 for projecting an image of a mask (surface 1) M3 onto a light-sensing plate (surface 2) P3. The catadioptric optical system PL31 includes a concave mirror CCM31, a1 st lens group PG13, a1 st optical path deflecting surface FM13, a2 nd lens group PG23, a2 nd optical path deflecting surface FM23, and a3 rd lens group PG 33; the concave mirror CCM31 is disposed on the optical path between the mask M3 and the field stop (visual field diaphragm) FS; the 1 st lens group PG13 is disposed in the optical path between the mask M3 and the concave mirror CCM31, and has positive refractive power; the 1 st optical path deflecting surface FM13 is provided obliquely to the optical path between the 1 st lens group PG13 and the concave mirror CCM31 at an angle of 45 ° with respect to the mask M3 surface, and deflects the optical path by reflecting light traveling in the-Z axis direction from the 1 st lens group PG13 in the X axis direction; the 2 nd lens group PG23 is disposed in the optical path between the 1 st optical path deflecting surface FM13 and the concave mirror CCM 31; the 2 nd optical path deflecting surface FM23 is provided obliquely to the optical path between the 2 nd lens group PG23 and the field stop FS at an angle of 45 ° with respect to the mask M3 surface, and deflects the optical path by reflecting light traveling from the 2 nd lens group PG23 in the-X axis direction in the-Z axis direction; the 3 rd lens group PG33 is disposed on the optical path between the 2 nd optical path deflecting surface FM23 and the field stop FS, and has positive refractive power.

The catadioptric optical system PL32 has the same structure as the catadioptric optical system PL 31. That is, the optical lens includes a concave mirror CCM32, a 4 th lens group PG43, a3 rd optical path deflecting surface FM33, a 5 th lens group PG53, a 4 th optical path deflecting surface FM43, and a 6 th lens group PG 63; the concave mirror CCM32 is disposed in the optical path between the field stop FS and the light-sensing plate P3; the 4 th lens group PG43 is disposed in an optical path between the field stop FS and the concave mirror CCM32, and has positive refractive power; the 3 rd optical path deflecting surface FM33 is provided obliquely to the optical path between the 4 th lens group PG43 and the concave mirror CCM32 at an angle of 45 ° with respect to the mask M3 surface, and deflects the optical path by reflecting the light traveling in the-Z axis direction from the 4 th lens group PG43 in the X axis direction; the 5 th lens group PG53 is disposed in the optical path between the 3 rd optical path deflecting surface FM33 and the concave mirror CCM 32; the 4 th optical path deflecting surface FM43 is provided obliquely at an angle of 45 ° with respect to the mask M3 surface in the optical path between the 5 th lens group PG53 and the light-receiving plate P3, and deflects the optical path by reflecting light traveling from the 5 th lens group PG53 in the-X axis direction in the-Z axis direction; the 6 th lens group PG63 is disposed in the optical path between the 4 th optical path deflecting surface FM43 and the light-sensing plate P3, and has positive refractive power.

The 1 st lens group PG13 is composed of a plano-convex lens L103, a biconcave lens L113, and a biconvex lens L123 which face a plane on the mask M3 side. The 2 nd lens group PG23 is composed of a double convex lens L143, a negative meniscus lens L153 facing concave on the 1 st optical path deflecting surface FM13 side, a negative meniscus lens L163 facing convex on the 1 st optical path deflecting surface FM13 side, and a negative meniscus lens L173 facing concave on the 1 st optical path deflecting surface FM13 side. The 3 rd lens group PG33 is composed of a plano-convex lens L183 facing the convex surface on the 2 nd optical path deflecting surface FM23 side, a negative meniscus lens L193 facing the convex surface on the 2 nd optical path deflecting surface FM23 side, and a positive meniscus lens L203 facing the convex surface on the 2 nd optical path deflecting surface FM23 side. The 4 th, 5 th, and 6 th lens groups PG43, PG53, and PG63 have the same structure as the 1 st, 2 nd, and 3 rd lens groups PG13, PG23, and PG33, respectively.

Here, in the above-described 1 st to 3 rd embodiments, when the focal length of the 1 st lens group PG11, PG12, PG13 is FPG1 and the focal length of the 3 rd lens group PG31, PG32, PG33 is FPG3, the condition 1 < FPG3/FPG1 < 2.5 is satisfied.

When the lower limit of the conditional expression is exceeded, the projection magnification is less than 1, and thus a projection optical system having magnification cannot be configured; if the upper limit of the conditional expression is exceeded, the height of the image on the enlargement side increases, and it becomes difficult to correct astigmatism (astigmatism) and field curvature.

Further, since the 1 st lens groups PG11, PG12, PG13, and the 3 rd lens groups PG31, PG32, and PG33 have positive refractive powers, respectively, since 2 positive lenses are included, correction of spherical aberration and field curvature is facilitated.

Further, since the 2 nd lens groups PG21, PG22, and PG23 include at least 1 negative lens and at least one positive lens, chromatic aberration (chromatic aberration) can be corrected in the 2 nd lens groups PG21, PG22, and PG 23. Further, it is more preferable to use an optical element of a different kind from at least 1 of the negative and positive lenses in the 2 nd lens groups PG21, PG22, and PG 23. In addition to this configuration, the 1 st lens groups PG11, PG12, PG13 and the 3 rd lens groups PG31, PG32, and PG33 preferably include a negative lens and a positive lens, respectively. Accordingly, since chromatic aberration correction can be performed in each lens group, even if the exposure wavelength is broadband (for example, the wavelength region from the g-line (436nm) to the i-line (365 nm)), favorable chromatic aberration correction can be achieved for the entire projection optical system.

In the above-described embodiments 1 and 2, since the 3 rd lens groups PG31 and PG32 include the negative lenses L181 and L192 disposed closest to the 2 nd optical path deflecting surface sides FM21 and FM22, the field of view can be separated even for light rays with a low image (image) height, and a wide exposure area can be secured.

An exposure apparatus according to embodiment 4 of the present invention will be described below with reference to the drawings. Fig. 4 is a schematic configuration diagram of an exposure apparatus according to embodiment 4. In the present embodiment, an exposure apparatus will be described as an example, which has a step-and-scan system and is capable of transferring an image of a pattern (original pattern) formed on a mask (1 st object) M and a plate (2 nd object, photosensitive substrate) P having an outer diameter of more than 500mm onto a plate P while relatively scanning the mask M and the plate P on a projection optical apparatus PL including projection optical systems PL10, PL11, and PL12 including any of the catadioptric projection optical systems of embodiments 1 to 3. Here, the outer shape is greater than 500mm, and means that one side or diagonal is greater than 500 mm.

The exposure apparatus of the present embodiment includes an illumination optical system IL for uniformly illuminating the mask M. The illumination optical system IL includes a light source formed of, for example, a mercury lamp or an ultra-high pressure mercury lamp, and is composed of an optical integrator (optical integrator), a field stop, a condenser lens (condenser lens), and the like. The exposure light beam emitted from the light source illuminates the pattern provided on the mask M through the illumination optical system IL. The light passing through the mask M projects and exposes the pattern of the mask M to an exposure area on the light-sensing plate via a plurality of projection optical systems PL10, PL11, PL 12. Here, for example, the projection optical system PL10 corresponds to the 1 st projection optical system, and the projection optical system PL11 corresponds to the 2 nd projection optical system.

The mask M is held on a mask stage (1 st stage) MST. The mask stage MST can move in a long stroke (stroke) in the scanning direction (X-axis direction) and can move by a specific amount in the non-scanning direction (Y-axis direction). The photosensitive web P is held on a photosensitive web stage (2 nd stage) PST. The plate stage PST can move in a long stroke in the scanning direction (X-axis direction) and can move a specific amount in the non-scanning direction (Y-axis direction). Further, the movement of the mask stage MST and the plate stage PST is controlled by the control unit CONT. That is, the controller CONT controls the mask stage MST and the plate stage PST to move in the scanning direction at a speed ratio corresponding to the magnification of the projection optical systems PL10, PL11, and PL12, and controls the mask stage MST and the plate stage PST to move in the non-scanning direction at a movement amount ratio corresponding to the magnification of the projection optical systems PL10, PL11, and PL 12.

Fig. 5 is a diagram showing the arrangement state of the projection optical systems PL10, PL11, PL 12. The projection optical systems PL10, PL11, and PL12 are arranged in a dispersed manner in a non-scanning direction (Y-axis direction) orthogonal to the scanning direction. The projection magnification of each of the projection optical systems PL10, PL11, and PL12 is 2 times. When the exposure regions formed by the projection optical systems PL10, PL11, and PL12 are EA1, EA2, and EA3, respectively, the exposure regions EA1, EA2, and EA3 are separated by a specific distance. Here, the effective exposure widths of exposure regions EA1, EA2, EA3 of the projection optical systems PL10, PL11, PL12 in the Y-axis direction are each EW. The distance between the projection optical system PL10 and the projection optical system PL11 in the Y-axis direction is PLP, and the distance between the projection optical system PL11 and the projection optical system PL12 in the Y-axis direction is PLP. At this time, the relationship between the effective exposure width EW of each of the projection optical systems PL10, PL11, and PL12 and the spacing distance PLP of the projection optical system in the Y-axis direction is:

PLP＝2×EW。

when the effective exposure width on the mask M corresponding to each of the projection optical systems PL10, PL11, and PL12 is MW,

EW＝2×MW。

next, an exposure method using the exposure apparatus of the above embodiment will be described with reference to fig. 6. First, step 1 is explained with reference to fig. 6. As shown in the drawing, exposure areas on the light-sensing plate P subjected to projection exposure by the projection optical systems PL10, PL11, and PL12 are P1A, P2A, and P3A, respectively, and illumination areas on the mask M are M1A, M2A, and M3A, respectively. Here, for example, the illumination area M1A may be considered to be a portion on the reticle, and the illumination area M2A may be considered to be a different portion on the reticle. Also, for example, the exposure region P1A may be considered as a1 st region on the light-sensing plate, and the exposure region P2A may be considered as a2 nd region on the light-sensing plate. In the present embodiment, a portion (e.g., M1A) and a different portion (e.g., M2A) of the mask are formed integrally on 1 mask, but may be formed on different masks. For example, one portion (here, M1A) may be formed on the 1 st mask and a different portion (here, M2A) may be formed on the 2 nd mask. In this case, the control unit CONT controls the mask stage MST so that only a part or a different part of the mask can be moved in the non-scanning direction.

When the scanning direction is set as the X-axis direction, the scanning speed of the mask M is set as VM, and the scanning speed of the plate P is set as VP, the following relationship is satisfied:

VP＝2×VM。

therefore, when the length of the exposure area of the mask M in the X-axis direction is MXL and the length of the exposure area of the plate P in the X-axis direction is PXL, the following equation holds:

PXL＝2×MXL。

next, step 2 will be described with reference to fig. 7. As shown in the figure, after the exposure of the exposure length PXL on the photosensitive web P in step 1 is completed, the photosensitive web P is moved SPB (distance equal to EW) in the-Y-axis direction. Mask M is moved in the Y-axis direction by SMB (distance equals MW). After which scanning exposure is performed. At this time, the regions exposed on the photosensitive web P are P1B, P2B, P3B, where P1B is exposed in such a manner as to partially overlap in the Y-axis direction with the adjacent exposure regions P1A, P2A that have been exposed in the previous step 1. The exposure region P2B is exposed in such a manner as to partially overlap in the Y-axis direction with the adjacent exposure regions P2A, P3A that have been exposed in the previous step 1. The exposure region P3B is exposed so as to partially overlap the adjacent exposure region P3A that has been exposed in the previous step 1 in the Y-axis direction.

Next, step 3 will be described with reference to fig. 8. When the exposure of the exposure length PXL on the photosensitive web P in step 2 is finished, the photosensitive web P is moved SPC (distance equal to 5 × EW) in the-Y-axis direction. The mask M is moved SMC (distance equals MW) in the Y-axis direction. After which scanning exposure is performed. At this time, the regions exposed on the photosensitive web P are regions P1C, P2C, P3C, in which P1C is exposed in such a manner as to partially overlap in the Y-axis direction with the adjacent exposure region P3B that has been exposed in the previous step 2.

Next, step 4 will be described with reference to fig. 9. When the exposure length on the photosensitive web P in step 3 is PXL, the photosensitive web P is moved SPD (distance equal to EW) in the-Y axis direction. The mask M is moved in the Y-axis direction only by the SMD (distance equals MW). After which scanning exposure is performed. At this time, the regions exposed on the photosensitive web P are regions P1D, P2D, P3D, in which P1D is exposed in such a manner as to partially overlap in the Y-axis direction with the adjacent exposure regions P1C, P2C that have been exposed in the previous step 3. The exposure region P2D is exposed in such a manner as to partially overlap in the Y-axis direction with the adjacent exposure regions P2C, P3C that have been exposed in the previous step 3. The exposure region P3D is exposed in such a manner as to partially overlap in the Y-axis direction with the adjacent exposure region P3C that has been exposed in the previous step 3.

As can be seen from the above steps 1 to 4, the area SM of the region on the mask M is 12 × MW × MXL, and the area SP of the region exposed on the photosensitive plate by the exposure apparatus of the present invention is 12 × EW × PXL.

From the above relation, the following relation holds between SM and SP:

SP＝4×SM，

thus, a region 4 times the area of the mask M can be exposed.

Next, a mask used in the exposure method of the above embodiment will be described. Fig. 10 is a diagram showing a mask when, for example, the projection optical systems PL10, PL11, and PL12 included in the exposure apparatus described above are composed of optical systems that form an erect image. As shown in fig. 10, the mask M10 includes a plurality of odd-numbered row pattern regions M101 (here, 3 pattern regions) and a plurality of even-numbered row pattern regions M102 (here, 3 pattern regions). Here, the plurality of odd-numbered column pattern regions M101 refer to, for example, odd-numbered regions counted from the left side in the Y-axis direction (non-scanning direction), i.e., the 1 st, 3 rd, and 5 th pattern regions, as shown in fig. 10, and the plurality of even-numbered column pattern regions M102 refer to even-numbered regions counted from the left side in the Y-axis direction (non-scanning direction), i.e., the 2 nd, 4 th, and 6 th pattern regions.

At least one pair of adjacent odd-numbered column pattern regions M101 and even-numbered column pattern regions M102 has a common region including the same pattern at the end in the Y-axis direction (non-scanning direction). Here, the common region is formed on the side where at least one pair of adjacent odd-numbered column pattern regions M101 and even-numbered column pattern regions M102 are adjacent to each other. For example, as shown in fig. 10, common regions C1, C2, C3, C4, and C5 are formed, respectively.

Fig. 11 is a view of a mask in a case where, for example, the projection optical systems PL10, PL11, and PL12 included in the exposure apparatus are composed of optical systems that form an inverted image. As shown in fig. 11, the mask includes a plurality of odd row pattern regions M101 (here, 3 pattern regions), and a plurality of even row pattern regions M102 (here, 3 pattern regions). Here, the plurality of odd-numbered column pattern regions M101 refer to, for example, as shown in fig. 11, odd-numbered pattern regions counted from the left side in the Y-axis direction (non-scanning direction), that is, 1 st, 3 rd, and 5 th pattern regions, and the plurality of even-numbered column pattern regions M102 refer to even-numbered pattern regions counted from the left side in the Y-axis direction (non-scanning direction), that is, 2 nd, 4 th, and 6 th pattern regions.

At least one pair of adjacent odd-numbered column pattern regions M101 and even-numbered column pattern regions M102 have common regions having the same pattern at the ends in the Y-axis direction (non-scanning direction). Here, the common regions are formed on the opposite side of the side where at least one pair of adjacent odd-numbered row pattern regions M101 and even-numbered row pattern regions M102 are adjacent, respectively. For example, as shown in fig. 11, common regions C1, C2, C3, C4, and C5 are formed, respectively.

In the mask M10 shown in fig. 10 and the mask M11 shown in fig. 11, exposure is transferred while overlapping all or part of the common regions C1 to C5 so that the common regions of at least one pair of adjacent odd-numbered row pattern regions M101 and even-numbered row pattern regions M102 overlap each other, thereby forming 1 pattern as a target. Fig. 12 shows a state after exposure and transfer of the mask M10(M11) onto the plate. As shown in fig. 12, a region P101 where the odd-numbered row pattern region M101 is subjected to transfer exposure, a region P102 where the even-numbered row pattern region M102 is subjected to transfer exposure, and regions P11, P12, P13, P14, and P15 where the common regions C1 to C5 are subjected to transfer exposure are formed on the photosensitive web P10. In the figure, EA1, EA2, and EA3 respectively indicate exposure regions of the projection optical systems PL1, PL2, and PL3, and PLP indicates the interval between the centers of adjacent exposure regions.

The pair of common regions C1 to C5 may include a pattern formed by overlapping each other to form 1 pattern, and the patterns formed in the pair of common regions C1 to C5 do not have to be completely identical. For example, in the common region between a pair of adjacent odd-column pattern regions M101 and even-column pattern regions M102, either the common region of the odd-column pattern region M101 or the common region of the even-column pattern region M102 may include an unnecessary pattern that is not used at all.

As shown in fig. 10 and 11, the mask M10(M11) includes: a plurality of 1 st reference marks M101 formed to have a specific positional relationship with the odd-numbered column pattern region M101, and a plurality of 2 nd reference marks M102 formed to have a specific positional relationship with the even-numbered column pattern region M102. Here, the 1 st reference mark M101 and the 2 nd reference mark M102 are an alignment mark for aligning the position of the mask M10(M11) with a device (e.g., a mask stage MST), an arrangement adjustment mark for adjusting the arrangement of the projection optical systems PL10, PL11, and PL12, a focus position detection mark for detecting deformation of the mask pattern surface in the Z-axis direction, an alignment mark for detecting relative positional deviation (continuity error) of the images of the odd-numbered row pattern region M101 and the even-numbered row pattern region M102 formed by the projection optical systems PL10, PL11, and PL12, and the like. Further, the 1 st reference mark may be formed on the mask M10(M11) according to a specific positional relationship with the even row pattern region M102, and the 2 nd reference mark may be formed on the mask M10(M11) according to a specific positional relationship with the odd row pattern region M101.

The 1 st reference mark M101 is disposed at a position spaced apart from the odd-numbered column pattern region M101 by a predetermined distance (for example, in fig. 10 or 11, the 1 st reference mark M101 spaced apart from the 1 st odd-numbered column pattern region M101 from the left side by a distance X1 in the X-axis direction). Similarly, the 2 nd reference mark M102 is disposed at a position spaced apart from the even-numbered column pattern region M102 by a predetermined distance (for example, in fig. 10 or 11, the 2 nd reference mark M102 spaced apart from the 6 th even-numbered column pattern region M102 from the left side by a distance X2 in the X-axis direction). Furthermore, the 1 st reference mark M101 and the 2 nd reference mark M102 may be disposed between the odd row pattern region M101 and the even row pattern region M102, the odd row pattern region M101 or the even row pattern region M102, or other portions of the mask.

Further, fig. 13 shows a mask M10 when the projection optical systems PL10, PL11, and PL12 are composed of optical systems that form an erect image. Fig. 14 shows a mask M11 when the projection optical systems PL10, PL11, and PL12 are composed of optical systems that form an inverted image. As shown in fig. 13 and 14, at least 1 of the 1 st reference marks M101 is arranged in a coordinate range of the odd-numbered column pattern region M101 (for example, the 1 st odd-numbered column pattern region M101 from the left) with respect to the Y-axis direction. Similarly, at least 1 of the 2 nd reference marks M102 is arranged in a coordinate range in the Y axis direction of an odd column pattern region M101 (for example, a 5 th odd column pattern region M101 from the left) different from the odd column pattern region M101 in which the 1 st reference mark M101 is arranged. For example, when alignment is performed before scanning the mask, the mask can be scanned without moving the mask in the Y-axis direction after alignment. Further, the 1 st reference mark or the 2 nd reference mark may be disposed within the coordinate range of the even-numbered row pattern region M102 with respect to the Y-axis direction.

For example, when the 1 st reference mark is used as an alignment mark for aligning the reticle in the X and Y directions and the 2 nd reference mark is used as an alignment mark for aligning the reticle in the θ direction, it is preferable that the 1 st reference mark and the 2 nd reference mark are arranged at a distance as much as possible in the Y axis direction. That is, as shown in fig. 13 and 14, it is preferable that the 1 st reference mark is disposed in the coordinate range of the 1 st odd-numbered column pattern region M101 from the left side with respect to the Y-axis direction, and the 2 nd reference mark is disposed in the coordinate range of the 5 th odd-numbered column pattern region M101 from the left side with respect to the Y-axis direction. Here, the θ direction refers to a shift direction (tilt direction) of the mask with respect to the X and Y directions.

Fig. 15 shows a mask M10 when the projection optical systems PL10, PL11, and PL12 are composed of optical systems that form an erect image, and fig. 16 shows a mask M11 when the projection optical systems PL10, PL11, and PL12 are composed of optical systems that form an inverted image. As shown in fig. 15 and 16, the 1 st reference mark M101 is preferably arranged within the coordinate range of the common region C11 of the odd-numbered row pattern region M101 with respect to the Y-axis direction. Similarly, the 2 nd reference mark M102 is preferably arranged in the coordinate range of the common region C12 of the even-numbered row pattern region M102 with respect to the Y-axis direction. With this arrangement, for example, the 1 st reference mark M101 or the 2 nd reference mark M102 not only has a function as an alignment mark for aligning the position of the reticle with the alignment device or a function as an arrangement adjustment mark for adjusting the arrangement of the projection optical systems, but also has a function as an alignment mark for detecting a relative positional shift (continuity error) of the images of the odd-numbered row pattern region M101 or the even-numbered row pattern region M102 formed by the respective projection optical systems PL10, PL11, and PL 12. In short, when the exposure is continued, it is possible to determine whether or not the continuation error is good by measuring the relative positional deviation between the 1 st reference mark m101 and the 2 nd reference mark m 102.

Fig. 17 shows an example of the 1 st reference mark m101a and the 2 nd reference mark m102a formed on the light-sensing plate in this embodiment. For example, the 1 st reference mark M101 formed on the mask M is cross-shaped, and the 2 nd reference mark is square. When the 1 st reference mark m101 in a cross shape and the 2 nd reference mark m102 in a square shape are exposed to light on the photosensitive web P in a manner to overlap each other, marks as shown in fig. 17 are formed on the photosensitive web P. The relative positional shift between the 1 st reference mark m101a and the 2 nd reference mark 102a formed on the photosensitive web P is measured by a photosensitive web appearance inspection apparatus or the like, and whether or not the continuous error is good is determined. Furthermore, when the continuity error exceeds the allowable value, the etching step is not performed, and the pattern of the mask M is exposed again on the plate after the resist is stripped. Thus, useless etching steps can be reduced. Here, the visual inspection apparatus for a light-receiving plate is an apparatus for detecting a shift, a continuity error, and the like of a pattern on the light-receiving plate by using an optical microscope.

In fig. 15 and 16, the arrangement interval between one odd-numbered row pattern region M101 and the other odd-numbered row pattern region M101 in the Y-axis direction (non-scanning direction) of at least one pair of odd-numbered row pattern regions M101 is set to the 1 st arrangement interval L1. Further, the arrangement interval in the Y-axis direction (non-scanning direction) between one even column pattern region M102 and the other even column pattern region M102 in at least one pair of even column pattern regions M102 is set to the 2 nd arrangement interval L2. Here, the 1 st arrangement interval L1 is substantially equal to the 2 nd arrangement interval L2. For example, in fig. 15 or 16, the arrangement interval L1 in the Y axis direction between the 1 st and 3 rd odd-numbered column pattern regions M101, which are odd-numbered from the left side, and the arrangement interval L2 in the Y axis direction between the 2 nd and 4 th even-numbered column pattern regions M102, which are even-numbered from the left side, are arranged at substantially the same distance. Here, for example, in fig. 15 or 16, the 1 st arrangement interval L1 is an interval in the Y axis direction between the center position of the 1 st odd-numbered column pattern region M101 counted from the left side and the center position of the 3 rd odd-numbered column pattern region M101. Similarly, for example, in fig. 15 or 16, the 2 nd arrangement interval L2 is an interval in the Y axis direction between the center position of the 2 nd even column pattern region M102 counted from the left side and the center position of the 4 th even column pattern region M102.

Furthermore, for example, as shown in fig. 4, when the pattern region (the odd-numbered row pattern region M101 or the even-numbered row pattern region M102) on the mask of the present embodiment is an original pattern for exposing a pattern on the photosensitive plate via the plurality of projection optical systems PL10, PL11, PL12 having magnification, it is desirable that the 1 st arrangement interval L1 or the 2 nd arrangement interval L2 is substantially equal to the interval of the field regions of the plurality of projection optical systems PL10, PL11, PL12 in the Y-axis direction.

In the description of the mask of the present embodiment, the term "adjacent" means that the odd row pattern region M101 and the even row pattern region M102 are not necessarily connected but may be separated by a predetermined distance. Similarly, when the odd-numbered row pattern regions are adjacent to each other and the even-numbered row pattern regions are adjacent to each other, the term "adjacent" means that the odd-numbered row pattern regions or the even-numbered row pattern regions are not necessarily connected to each other but may be spaced apart by a predetermined distance.

Here, the length of the mask pattern region in the Y-axis direction disclosed in this embodiment will be described. For example, when an exposure apparatus having a structure capable of obtaining a uniform exposure amount distribution over the entire exposure area on the photosensitive plate is used, in the mask M shown in this embodiment (fig. 10, 11, 13 to 16), the pattern regions formed at both ends in the Y-axis direction (for example, the 1 st odd-numbered row pattern region M101 from the left side and the 6 th even-numbered row pattern region M102 from the left side in fig. 10) may have a shorter length in the pattern region in the Y-axis direction than the other pattern regions. For example, in fig. 10, the end on the opposite side of the common region C1 of the 1 st odd-numbered column pattern region M101 from the left side is made shorter than the length of the common region C1. Similarly, in fig. 10, the end portion of the 6 th even column pattern region M102 on the opposite side of the common region C5 from the left side is preferably made shorter than the length of the common region C5.

In the photomask of the present embodiment, in order to prevent exposure of an unnecessary pattern formed in the periphery or a partial region on the photomask and erroneous exposure due to light leaking from the photosensitive plate, a light shielding band may be formed in the periphery or a partial region of the odd-numbered row pattern region, the even-numbered row pattern region, and the common region, for example, by a light shielding plate.

Next, a method of manufacturing the above-described photomask will be described. First, a method for manufacturing a mask used in an exposure apparatus including a projection optical system for forming an erect image will be described. As shown in fig. 18, first, all the pattern data corresponding to all the patterns formed on the mask are divided in the Y direction, which is the non-scanning direction. That is, for example, all the pattern data corresponding to all the patterns are divided into 6 pattern data of 3 odd-numbered column pattern regions M101 and 3 even-numbered column pattern regions M102.

Then, as shown in fig. 19, pattern data C1 to C5 corresponding to the common region are added to the ends of the divided pattern data in the Y axis direction, and drawing data corresponding to the odd column pattern region M101 and the even column pattern region M102 are created. In this case, the common regions are formed on the sides adjacent to the odd-numbered row pattern region M101 and the even-numbered row pattern region M102, respectively.

Next, based on the created drawing data, patterns of the plurality of odd-numbered row pattern regions M101 and the plurality of even-numbered row pattern regions M102 and reference marks M101 to M104 are drawn at specific positions on the mask substrate (blanks) using an EB exposure apparatus or the like. In this way, a mask M10 (fig. 10, etc.) used in an exposure apparatus including a projection optical system for forming an erect image is manufactured.

Next, a method of manufacturing a mask used in a scanning exposure apparatus including a projection optical system for forming an inverted image will be described. As shown in fig. 18, first, all the pattern data corresponding to all the patterns formed on the mask are divided in the Y direction, which is the non-scanning direction. That is, for example, all the pattern data corresponding to all the patterns are divided into 6 pattern data of 3 odd-numbered column pattern regions M101 and 3 even-numbered column pattern regions M102. Next, the pattern data of the odd-numbered column pattern region M101 and the even-numbered column pattern region M102 are inverted in the Y-axis direction, and as shown in fig. 20, the pattern data C1 to C5 corresponding to the common region are added to the ends of the divided pattern data in the Y-axis direction, and drawing data corresponding to the odd-numbered column pattern region M101 and the even-numbered column pattern region M102 are created. In this case, the common region is formed on the opposite side of the side adjacent to the adjacent odd-numbered row pattern region M101 and even-numbered row pattern region M102, respectively.

Then, based on the created drawing data, a plurality of odd-numbered row pattern regions M101, a plurality of even-numbered row pattern regions M102, and reference marks M101 to M104 are drawn at specific positions on a mask substrate (blanks) using an EB exposure apparatus or the like. In this way, a mask M11 (fig. 11 and the like) used in an exposure apparatus including a projection optical system that forms an inverted image is manufactured.

In the method of manufacturing a photomask, all the pattern data corresponding to all the patterns are divided and then the pattern data corresponding to the common region is added, but the pattern data may be drawn on a photomask substrate (blanks) by an EB exposure apparatus or the like based on the divided pattern data after dividing all the pattern data including the pattern data corresponding to the common region.

With the exposure method of the above embodiment, a microdevice (a semiconductor device, an image pickup device, a liquid crystal display device, a thin film magnetic head, or the like) can be manufactured. An example of a method for obtaining a liquid crystal display module (flat panel display) as a micro device by forming a specific circuit pattern on a photosensitive plate or the like as a photosensitive substrate by the exposure method of the above embodiment will be described below with reference to a flowchart of fig. 21.

In fig. 21, in a pattern forming step S401, a so-called photolithography etching step is performed by transferring and exposing a mask pattern onto a photosensitive substrate (e.g., a glass substrate coated with a resist) using the exposure apparatus of the present embodiment. By the photolithography and etching step, a specific pattern including a plurality of electrodes and the like can be formed on the photosensitive substrate. Thereafter, the exposed substrate is subjected to a developing step, an etching step, a resist stripping step, and the like to form a specific pattern on the substrate, and then is subjected to a next color filter forming step S402.

Next, in the color filter forming step S402, a plurality of color filters are formed in which groups of three points corresponding to R (Red), G (Green), and B (Blue) are arranged in a matrix, or a plurality of groups of R, G, B three stripe filters are arranged in the horizontal scanning line direction. Then, after the color filter forming step S402, a cell assembling step S403 is performed. In the cell assembling step S403, a liquid crystal panel (liquid crystal cell) is assembled using the plate thereof having the specific pattern obtained in the pattern forming step S401, the color filter obtained in the color filter forming step S402, and the like. In the cell assembling step S403, for example, liquid crystal is injected between the substrate having the specific pattern obtained in the pattern forming step S401 and the color filter obtained in the color filter forming step S402, thereby manufacturing a liquid crystal panel (liquid crystal cell).

Thereafter, in the module assembling step S404, components such as a circuit for performing a display operation of the assembled liquid crystal panel (liquid crystal cell) and a backlight (back light) are mounted, thereby completing a liquid crystal display module. According to the above method for manufacturing a liquid crystal display element, since exposure is performed using a wide exposure region, a liquid crystal display element as a flat panel display can be obtained with high throughput.

According to the projection optical system of the present invention, a projection optical system having a magnification and capable of performing favorable chromatic aberration correction can be provided.

Further, according to the exposure apparatus of the present invention, a wide exposure region can be provided without increasing the mask size, and good exposure can be performed.

Further, according to the exposure method of the present invention, good exposure can be performed in a wide exposure region without increasing the mask size.

Further, according to the method for manufacturing a display of the present invention, since exposure is performed by the exposure apparatus of the present invention or the exposure method of the present invention, a good display can be obtained.

Further, according to the photomask of the present invention, even when a mask pattern is transferred onto a large-sized photosensitive plate, the photomask can be prevented from being enlarged, and thus the manufacturing cost of the photomask can be reduced.

Further, according to the method for manufacturing a mask of the present invention, since the method can be used in an exposure apparatus including a projection optical system having a magnification, the manufacturing cost of the mask can be reduced.

The above-described embodiments are provided for easy understanding of the present invention, and are not intended to limit the present invention. Therefore, the gist of each element disclosed in the embodiment also includes all design modifications and equivalents that fall within the technical scope of the present invention.

Also, the present disclosure relates to the subject matter contained in Japanese patent application No. 2006-39446, which was filed on 16.2006, and Japanese patent application No. 2007-14631, which was filed on 25.1.2007, and the entire contents of the disclosures therein are expressly incorporated herein as reference matters.

[ examples ]

In the following, embodiments 1 to 3 will be described, and since the configurations of catadioptric optical systems of embodiments 1 to 3 are the same as those of catadioptric optical systems of embodiments 1 to 3 shown in fig. 1 to 3, respectively, the symbols used in the description of catadioptric optical systems of embodiments 1 to 3 will be used in the description of catadioptric optical systems of embodiments 1 to 3. Tables 1 to 3 show the optical component specifications of the catadioptric optical systems PL1 to PL3 of examples 1 to 3. In the optical member specifications of tables 1 to 3, the surface number of row 1 is the order of the surfaces along the traveling direction of the light beam from the object side, row 2 is the radius of curvature (mm) of each surface, the surface interval of row 3 is the surface interval (mm) on the optical axis, row 4 is the refractive index of the nitre material of the optical member with respect to g-line, row 5 is the refractive index of the nitre material of the optical member with respect to h-line, row 6 is the refractive index of the nitre material of the optical member with respect to i-line, and row 7 is the name of the lens.

(example 1)

The specification values of the catadioptric optical system PL1 of example 1 are shown below.

(Specification)

Object side (glass substrate side) Numerical Aperture (NA): 0.065

Projection magnification: 1.5 times of

Corresponding values of the conditional expressions:

focal length FPG1 of the 1 st lens group is 906.5mm

Focal length FPG3 of the 3 rd lens group is 1429.8mm

|FPG3/FPG1|＝1429.8/906.5

＝1.6

(Table 1)

(optical component Specification)

r d n(g) n(h) n(i)

0 97.032 1.00000 1.00000 1.00000

1 -254.374 27.209 1.48032 1.48272 1.48677 L101

2 -172.584 13.935 1.00000 1.00000 1.00000

3 -166.928 20.000 1.46671 1.46964 1.47456 L111

4 449.499 10.438 1.00000 1.00000 1.00000

5 511.800 35.000 1.48032 1.48272 1.48677 L121

6 -352.458 10.649 1.00000 1.00000 1.00000

7 ∞ 22.265 1.48032 1.48272 1.48677 L131

8 -36 1.804 87.000 1.00000 1.00000 1.00000

9 ∞ -544.308 -1.00000 -1.00000 1.00000 FM11

10 -478.242 -32.566 -1.48032 -1.48272 -1.48677 L141

11 319.098 -2.928 -1.00000 -1.00000 -1.00000

12 315.584 -18.000 -1.46671 -1.46964 -1.47456 L151

13 2137.264 -2.000 -1.00000 -1.00000 -1.00000

14 -531.834 -18.000 -1.46671 -1.46964 -1.47456 L161

15 -328.624 -24.987 -1.00000 -1.00000 -1.00000

16 333.432 35.973 -1.46671 -1.46964 -1.47456 L171

17 441.158 -216.544 -1.00000 -1.00000 -1.00000

18 1846.398 216.544 1.00000 1.00000 1.00000 CCM1

19 441.158 35.973 1.46671 1.46964 1.47456 L171

20 333.432 24.987 1.00000 1.00000 1.00000

21 -328.624 18.000 1.46671 1.46964 1.47456 L161

22 -53 1.834 2.000 1.00000 1.00000 1.00000

23 2137.264 18.000 1.46671 1.46964 1.47456 L151

24 315.584 2.928 1.00000 1.00000 1.00000

25 319.098 32.566 1.48032 1.48272 1.48677 L141

26 -478.242 544.308 1.00000 1.00000 1.00000

27 ∞ -90.000 -1.00000 -1.00000 -1.00000 FM21

28 600.279 -20.000 -1.48032 -1.48272 -1.48677 L181

29 -578.059 -106.109 -1.00000 -1.00000 -1.00000

30 -1193.741 -31.322 -1.46671 -1.46964 -1.47456 L191

31 395.773 -2.000 -1.00000 -1.00000 -1.00000

32 -416.473 -3 1.993 -1.46671 -1.46964 -1.47456 L201

33 ∞ -3.466 -1.00000 -1.00000 -1.00000

34 ∞ -22.000 -1.48032 -1.48272 -1.48677 L211

35 -619.461 -158.343 -1.00000 -1.00000 -1.00000

The following shows the values of the respective image heights when the rms values of the wavefront aberrations at the respective wavelengths (g line, h line, i line) are Wrms (g), Wrms (h), Wrms (i).

Like height (mm) Wrms (g) Wrms (h) Wrms (i)

46.5 5.0mλ 3.4mλ 4.8mλ

63.0 5.1mλ 3.5mλ 5.8mλ

79.5 5.5mλ 6.8mλ 6.7mλ

96.0 8.9mλ 9.4mλ 12.7mλ

The projection optical system of embodiment 1 can correct wavefront aberration at each wavelength satisfactorily.

(example 2)

The specification values of the catadioptric optical system PL2 of example 2 are shown below.

(Specification)

Object side (glass substrate side) Numerical Aperture (NA): 0.056

Projection magnification: 2 times of

Corresponding values of the conditional expressions:

focal length FPG1 of the 1 st lens group is 707mm

Focal length FPG3 of 3 rd lens group is 1649mm

|FPG3/FPG1|＝1649/707

＝2.3

(Table 2)

(optical component Specification)

r d n(g) n(h) n(i)

0 41.235 1.00000 1.00000 1.00000

1 -306.121 45.000 1.48032 1.48272 1.48677L102

2 -327.412 3.177 1.00000 1.00000 1.00000

3 -322.670 45.000 1.46671 1.46964 1.47456 L112

4 613.094 5.986 1.00000 1.00000 1.00000

5 1676.049 35.548 1.48032 1.48272 1.48677 L122

6 -224.580 6.992 1.00000 1.00000 1.00000

7 -181.457 20.000 1.46671 1.46964 1.47456 L132

8 -310.107 2.000 1.00000 1.00000 1.00000

9 ∞ 25.330 1.48032 1.48272 1.48677 L142

10 -268.581 90.000 1.00000 1.00000 1.00000

11 ∞ -214.629 -1.00000 -1.00000 -1.00000 FM12

12 -1116.037 -45.000 -1.46671 -1.46964 -1.47456 L152

13 -330.715 -22.158 -1.00000 -1.00000 -1.00000

14 -367.124 -45.000 -1.48032 -1.48272 -1.48677 L162

15 409.133 -2.000 -1.00000 -1.00000 -1.00000

16 548.409 -45.000 -1.46671 -1.46964 -1.47456 L172

17 -570.461 -5.736 -1.00000 -1.00000 -1.00000

18 -913.519 -45.000 -1.48032 -1.48272 -1.48677 L182

19 1946.161 -330.406 -1.00000 -1.00000 -1.00000

20 1719.098 330.406 1.00000 1.00000 1.00000CCM2

21 1946.161 45.000 1.48032 1.48272 1.48677 L182

22 -913.519 5.736 1.00000 1.00000 1.00000

23 -570.461 45.000 1.46671 1.46964 1.47456 L172

24 548.409 2.000 1.00000 1.00000 1.00000

25 409.133 45.000 1.48032 1.48272 1.48677 L162

26 -367.124 22.158 1.00000 1.00000 1.00000

27 -330.715 45.000 1.46671 1.46964 1.47456 L152

28 -1116.037 214.629 1.00000 1.00000 1.00000

29 ∞ -95.000 -1.00000 -1.00000 -1.00000 FM22

30 406.592 -20.000 -1.48032 -1.48272 -1.48677 L192

31 -672.444 -117.758 -1.00000 -1.00000 -1.00000

32 570.508 -45.000 -1.46671 -1.46964 -1.47456 L202

33 394.103 -2.000 -1.00000 -1.00000 -1.00000

34 -642.658 -50.000 -1.59415 -1.60086 -1.61279 L212

35 -475.934 -3.880 -1.00000 -1.00000 -1.00000

36 -503.152 -50.000 -1.60329 -1.60769 -1.61517 L222

37 1079.099 -302.907 -1.00000 -1.00000 -1.00000

The following shows the values of the respective image heights when the rms values of the wavefront aberrations at the respective wavelengths (g line, h line, i line) are Wrms (g), Wrms (h), Wrms (i).

Like height (mm) Wrms (g) Wrms (h) Wrms (i)

56.0 6.1mλ 7.1mλ 5.9mλ

75.7 6.5mλ 7.1mλ 6.2mλ

95.3 6.0mλ 6.3mλ 7.7mλ

115.0 14.6mλ 17.3mλ 25.3mλ

The projection optical system of embodiment 2 can correct wavefront aberration at each wavelength satisfactorily.

(example 3)

The specification values of the catadioptric optical system PL3 of example 3 are shown below.

(Specification)

Object side (glass substrate side) Numerical Aperture (NA): 0.085

Projection magnification: 1.25 times of

Corresponding values of the conditional expressions:

focal length FPG1 of the 1 st lens group is 741.7mm

Focal length FPG3 of the 3 rd lens group is 861.1mm

|FPG3/FPG1|＝861.1/741.7

＝1.2

(Table 3)

(optical component Specification)

r d n(g) n(h) n(i)

0 45.154 1.00000 1.00000 1.00000

1 ∞ 20.799 1.48032 1.48272 1.48677L103

2 -226.224 4.715 1.00000 1.00000 1.00000

3 -196.402 15.000 1.46671 1.46964 1.47456 L113

4 588.156 30.699 1.00000 1.00000 1.00000

5 859.140 40.000 1.48032 1.48272 1.48677 L123

6 -274.898 90.000 1.00000 1.00000 1.00000

7 ∞ -347.770 -1.00000 -1.00000 -1.00000 FM13

8 -398.508 -28.365 -1.48032 -1.48272 -1.48677 L143

9 303.613 -2.962 -1.00000 -1.00000 -1.00000

10 299.514 -18.000 -1.46671 -1.46964 -1.47456 L153

11 2214.264 -2.000 -1.00000 -1.00000 -1.00000

12 -866.521 -1 8.000 -1.46671 -1.46964 -1.47456 L163

13 -312.592 -24.341 -1.00000 -1.00000 -1.00000

14 247.189 -70.000 -1.46671 -1.46964 -1.47456 L173

15 294.614 -172.194 -1.00000 -1.00000 -1.00000

16 1167.379 172.194 1.00000 1.00000 1.00000CCM31

17 294.614 70.000 1.46671 1.46964 1.47456 L173

18 247.189 24.341 1.00000 1.00000 1.00000

19 -312.592 18.000 1.46671 1.46964 1.47456 L163

20 -866.521 2.000 1.00000 1.00000 1.00000

21 2214.264 18.000 1.46671 1.46964 1.47456 L153

22 299.514 2.962 1.00000 1.00000 1.00000

23 303.613 28.365 1.48032 1.48272 1.48677 L143

24 -398.508 347.770 1.00000 1.00000 1.00000

25 ∞ -180.018 -1.00000 -1.00000 -1.00000 FM23

26 -334.868 -20.056 -1.46671 -1.46964 -1.47456 L183

27 ∞ -2.000 -1.00000 -1.00000 -1.00000

28 -348.889 -20.000 -1.46671 -1.46964 -1.47456 L193

29 -191.372 -4.275 -1.00000 -1.00000 -1.00000

30 -205.694 -20.000 -1.48032 -1.48272 -1.48677 L203

31 -318.094 -54.176 -1.00000 -1.00000 -1.00000

32 ∞ -45.154 -1.00000 -1.00000 -1.00000 FS

33 ∞ -20.799 -1.48032 -1.48272 -1.48677

34 226.224 -4.715 -1.00000 -1.00000 -1.00000

35 196.402 -15.000 -1.46671 -1.46964 -1.47456

36 -588.156 -30.699 -1.00000 -1.00000 -1.00000

37 -859.140 -40.000 -1.48032 -1.48272 -1.48677

38 274.898 -90.000 -1.00000 -1.00000 -1.00000

39 ∞ 347.770 1.00000 1.00000 1.00000 FM33

40 398.508 28.365 1.48032 1.48272 1.48677

41 -303.613 2.962 1.00000 1.00000 1.00000

42 -299.514 18.000 1.46671 1.46964 1.47456

43 -2214.264 2.000 1.00000 1.00000 1.00000

44 866.521 18.000 1.46671 1.46964 1.47456

45 312.592 24.341 1.00000 1.00000 1.00000

46 -247.189 70.000 1.46671 1.46964 1.47456

47 -294.614 172.194 1.00000 1.00000 1.00000

48 -1167.379 -172.194 -1.00000 -1.00000 -1.00000 CCM32

49 -294.614 -70.000 -1.46671 -1.46964 -1.47456

50 -247.189 -24.341 -1.00000 -1.00000 -1.00000

51 312.592 -18.000 -1.46671 -1.46964 -1.47456

52 866.521 -2.000 -1.00000 -1.00000 -1.00000

53 -2214.264 -18.000 -1.46671 -1.46964 -1.47456

54 -299.514 -2.962 -1.00000 -1.00000 -1.00000

55 -303.613 -28.365 -1.48032 -1.48272 -1.48677

56 398.508 -347.770 -1.00000 -1.00000 -1.00000

57 ∞ 180.018 1.00000 1.00000 1.00000FM43

58 334.868 20.056 1.46671 1.46964 1.47456

59 ∞ 2.000 1.00000 1.00000 1.00000

60 348.889 20.000 1.46671 1.46964 1.47456

61 91.372 4.275 1.00000 1.00000 1.00000

62 205.694 20.000 1.48032 1.48272 1.48677

63 318.094 54.191 1.00000 1.00000 1.00000

The following shows the values of the respective image heights when the rms values of the wavefront aberrations at the respective wavelengths (g line, h line, i line) are Wrms (g), Wrms (h), Wrms (i).

Like height (mm) Wrms (g) Wrms (h) Wrms (i)

40.0 7.1mλ 5.6mλ 5.0mλ

53.3 11.5mλ 3.3mλ 12.6mλ

66.7 8.2mλ 4.5mλ 14.1mλ

80.0 21.3mλ 24.7mλ 13.9mλ

The projection optical system of embodiment 3 can correct wavefront aberration at each wavelength satisfactorily.

[ industrial applicability ]

The present invention is applicable to a projection optical system for projecting an image of a mask, a reticle, or the like onto a substrate or the like, an exposure apparatus including the projection optical system, an exposure method using the exposure apparatus, a display manufacturing method using the exposure apparatus, a mask, and a mask manufacturing method.

Claims (23)

1. An exposure apparatus that exposes an image of a1 st object to a2 nd object while moving the 1 st object and the 2 nd object in a scanning direction, the exposure apparatus comprising:

a1 st projection optical system and a2 nd projection optical system which are arranged at a predetermined interval in a non-scanning direction intersecting the scanning direction and each have a magnification;

a1 st stage that holds the 1 st object, the 1 st object having a1 st pattern region and a2 nd pattern region provided at the predetermined interval in the non-scanning direction, and a3 rd pattern region formed between the 1 st pattern region and the 2 nd pattern region, the 1 st stage being movable in the scanning direction and the non-scanning direction;

a2 nd stage which holds the 2 nd object and is movable in the scanning direction and the non-scanning direction; and

a control unit for controlling the movement of the 1 st stage and the 2 nd stage, wherein the control unit performs the following control:

controlling the movement of the 1 st stage and the 2 nd stage by causing the 1 st projection optical system to project an enlarged image of the 1 st pattern region onto a1 st region of the 2 nd object and causing the 2 nd projection optical system to project an enlarged image of the 2 nd pattern region onto a2 nd region spaced apart from the 1 st region of the 2 nd object by the predetermined interval in the non-scanning direction;

and controlling the 1 st stage and the 2 nd stage to move by projecting the enlarged image of the 3 rd pattern region onto a3 rd region between the 1 st region and the 2 nd region of the 2 nd object by the 1 st projection optical system or the 2 nd projection optical system.

2. The exposure apparatus according to claim 1, wherein the control unit performs the following control:

controlling the 1 st stage and the 2 nd stage to move in the scanning direction while the 1 st projection optical system projects the enlarged image of the 1 st pattern region onto the 1 st region and the 2 nd projection optical system projects the enlarged image of the 2 nd pattern region onto the 2 nd region; and

and controlling the 1 st stage and the 2 nd stage to move in the scanning direction in a state where the 1 st projection optical system or the 2 nd projection optical system projects the enlarged image of the 3 rd pattern region onto the 3 rd region.

3. The exposure apparatus according to claim 2, wherein the control unit performs the following control:

in a state where the 1 st projection optical system projects the enlarged image of the 1 st pattern region onto the 1 st region and the 2 nd projection optical system projects the enlarged image of the 2 nd pattern region onto the 2 nd region, the 1 st stage and the 2 nd stage are moved in the non-scanning direction, and the 1 st projection optical system or the 2 nd projection optical system projects the enlarged image of the 3 rd pattern region onto the 3 rd region.

4. The exposure apparatus according to claim 1, wherein,

it is characterized in that the preparation method is characterized in that,

the control unit controls the 1 st and 2 nd stages to move in the scanning direction at a speed ratio corresponding to the magnification of the 1 st and 2 nd projection optical systems.

5. The exposure apparatus according to claim 1, wherein,

it is characterized in that the preparation method is characterized in that,

the control unit controls the 1 st and 2 nd stages to move in the non-scanning direction at a movement amount ratio corresponding to the magnification of the 1 st and 2 nd projection optical systems.

6. The exposure apparatus according to claim 1, characterized in that:

an enlarged image of the 3 rd pattern region is projected onto the 3 rd region so as to overlap with a portion of the 1 st region and the 2 nd region.

7. The exposure apparatus according to claim 1, wherein the predetermined interval is equal to 2 times an effective exposure width in the non-scanning direction of the 1 st projection optical system and the 2 nd projection optical system with respect to the 2 nd object.

8. The exposure apparatus according to claim 1,

the 1 st and 2 nd projection optical systems have at least 1 catadioptric optical system for projecting the enlarged image of the 1 st object onto the 2 nd object,

the catadioptric optical system includes:

a concave reflecting mirror disposed in an optical path between the 1 st object and the 2 nd object;

a1 st lens group which is arranged in an optical path between the 1 st object and the concave reflecting mirror and has positive refractive power;

a1 st optical path deflecting surface arranged in an optical path between the 1 st lens group and the concave reflecting mirror to deflect the optical path;

a2 nd lens group disposed in an optical path between the 1 st optical path deflecting surface and the concave reflecting mirror;

a2 nd optical path deflecting surface arranged in an optical path between the 2 nd lens group and the 2 nd object, for deflecting the optical path; and

a3 rd lens group which is disposed in an optical path between the 2 nd optical path deflecting surface and the 2 nd object and has positive refractive power;

when the focal length of the 1 st lens group is FPG1 and the focal length of the 3 rd lens group is FPG3, the condition 1 < FPG3/FPG1 < 2.5 is satisfied.

9. The exposure apparatus according to claim 8, characterized in that:

the 1 st lens group includes 1 st and 2 nd positive lenses,

the 3 rd lens group includes 3 rd and 4 th positive lenses.

10. The exposure apparatus according to claim 8, characterized in that:

the 2 nd lens group includes at least 1 negative lens and a positive lens.

11. The exposure apparatus according to claim 8, characterized in that:

the 3 rd lens group includes a negative lens disposed closest to the 2 nd optical path deflecting surface side.

12. The exposure apparatus according to claim 8, characterized in that:

the 1 st projection optical system and the 2 nd projection optical system each include a pair of the catadioptric optical systems.

13. The exposure apparatus according to claim 1, characterized in that:

the 2 nd object is a substrate having an outer diameter of more than 500 mm.

14. A method of manufacturing a display, comprising:

an exposure step of exposing an enlarged image of the pattern on the mask onto a photosensitive substrate using the exposure apparatus according to any one of claims 1 to 13; and

and a developing step of developing the photosensitive substrate exposed in the exposure step.

15. An exposure method for exposing an image of a1 st object to a2 nd object while moving the 1 st object and the 2 nd object in a scanning direction, the exposure method comprising:

providing the 1 st object, wherein the 1 st object is formed with a1 st pattern region and a2 nd pattern region which are arranged at a predetermined interval in a non-scanning direction intersecting with a scanning direction, and is formed with a3 rd pattern region between the 1 st pattern region and the 2 nd pattern region;

moving the 1 st object and the 2 nd object by projecting the enlarged image of the 1 st pattern region onto a1 st region of the 2 nd object and projecting the enlarged image of the 2 nd pattern region onto a2 nd region spaced apart from the 1 st region by the predetermined interval in the non-scanning direction; and

and projecting the enlarged image of the 3 rd pattern region onto a3 rd region between the 1 st region and the 2 nd region of the 2 nd object, thereby moving the 1 st object and the 2 nd object.

16. The exposure method according to claim 15, characterized by comprising the steps of:

moving the 1 st object and the 2 nd object in the scanning direction in a state where the enlarged image of the 1 st pattern region is projected onto the 1 st region and the enlarged image of the 2 nd pattern region is projected onto the 2 nd region; and is

And moving the 1 st object and the 2 nd object in the scanning direction in a state where the enlarged image of the 3 rd pattern region is projected onto the 3 rd region.

17. The exposure method according to claim 16, characterized by comprising the steps of:

from a state in which the enlarged image of the 1 st pattern region is projected onto the 1 st region and the enlarged image of the 2 nd pattern region is projected onto the 2 nd region, the 1 st object and the 2 nd object are moved in the non-scanning direction to be in a state in which the enlarged image of the 3 rd pattern region is projected onto the 3 rd region.

18. The exposure method according to claim 15, characterized by comprising the steps of:

and moving the 1 st object and the 2 nd object in the scanning direction at a speed ratio corresponding to a magnification ratio of the enlarged image of the 1 st pattern region projected onto the 2 nd object and the enlarged image of the 2 nd pattern region projected onto the 2 nd object.

19. The exposure method according to claim 15, characterized by comprising the steps of:

and moving the 1 st object and the 2 nd object in the non-scanning direction at a movement amount ratio corresponding to a magnification ratio of the enlarged image projected onto the 1 st pattern region and the enlarged image projected onto the 2 nd pattern region.

20. The exposure method according to claim 15, characterized by comprising the steps of:

and projecting an enlarged image of the 3 rd pattern region onto the 3 rd region so as to overlap with a portion of the 1 st region and the 2 nd region.

21. The exposure method according to claim 15, wherein the predetermined interval is equal to 2 times an effective exposure width in the non-scanning direction of the 2 nd object of the 1 st projection optical system and the 2 nd projection optical system that project the enlarged image of the 1 st pattern region and the enlarged image of the 2 nd pattern region, respectively.

22. The exposure method according to claim 15, characterized in that:

the 2 nd object is a substrate having an outer diameter of more than 500 mm.

23. A method of manufacturing a display, comprising:

an exposure step of exposing an enlarged image of the pattern on the mask onto a photosensitive substrate by using the exposure method according to any one of claims 15 to 22; and

and a developing step of developing the photosensitive substrate exposed in the exposure step.