HK1100791B - Exposure apparatus and exposure method, and device producing method - Google Patents

Description

Exposure apparatus, exposure method, and device manufacturing method

Technical Field

The present invention relates to an exposure apparatus, an exposure method, and a device manufacturing method for exposing a substrate through a liquid.

The present application claims priority to Japanese patent application No. 2004-.

Background

Semiconductor devices or liquid crystal display devices are manufactured by a method called photolithography (photolithography) which transfers a pattern (pattern) formed on a mask onto a photosensitive substrate. The exposure apparatus used in the lithography process has a mask stage for supporting a mask and a substrate stage for supporting a substrate, and the mask stage and the substrate stage are moved one after another so that the pattern of the mask is transferred onto the substrate by a projection optical system. In recent years, in order to cope with higher pattern integration of elements, a higher resolution of the projection optical system is desired. The exposure wavelength used is shortened, the number of openings of the projection optical system is increased, and the resolution of the projection optical system is increased. Therefore, the exposure wavelength used in the exposure apparatus is shortened year by year, and the number of openings of the projection optical system is also increased. Then, although the exposure wavelength of the mainstream is 248nm of KrF excimer (eximer) laser, 193nm of ArF excimer (eximer) laser having a shorter wavelength is also being put into practical use.

In addition, the depth of focus (DOF) and the resolution are also important when performing exposure. The resolution R and the depth of focus are expressed by the following equations.

R＝k1. λ/NA ...(1)

δ＝±k2. λ/NA² ...(2)

Here, λ is the exposure wavelength, NA is the number of apertures of the projection optical system, and k1 and k2 are program coefficients. With the formulas (1) and (2), in order to increase the resolution R, the exposure wavelength λ needs to be shortened, and it is clear that the focal depth δ becomes narrower as the aperture number NA becomes larger.

If the depth of focus δ becomes too small, it is difficult to align the substrate surface with the image plane of the projection optical system, and focus matching during exposure operation is insufficient. Therefore, for example, a method of actually shortening the exposure wavelength and extending the depth of focus has been proposed in the liquid immersion method disclosed in PCT international publication No. WO99/49504 (patent document 1). In the liquid immersion method, a liquid immersion area is formed by filling a space between the lower surface of the projection optical system and the surface of the substrate with a liquid such as water or an organic solvent. The wavelength of the exposure beam in the liquid is made to be 1/n (n is a refractive index of the liquid, and is usually 1.2 to 1.6) in air to increase the depth of focus to about n times while the resolution is made to be upward. The disclosure of this booklet (patent document 1) is adopted as part of the present specification in the restriction permitted by the national act of national regulation of a designated country (or a selected country) as specified in the international application.

Disclosure of Invention

However, in recent years, a double (twin) stage type exposure apparatus that mounts 2 substrate stages for holding substrates has been applied to the market. The dual stage exposure apparatus performs exposure preparation so as to perform measurement processing, and when exposure operation is performed on one substrate stage, measurement processing such as alignment of the next substrate and focus measurement is performed on the other substrate stage. It is important that the measurement process can be performed well even when the liquid immersion method is applied to a two-stage exposure apparatus.

In view of the above, the present invention provides an exposure apparatus, an exposure method, and a device manufacturing method, which can perform a measurement process satisfactorily and perform an exposure process with high accuracy even when a liquid immersion method is applied to a two-stage exposure apparatus.

In order to achieve the above object, the present invention employs the following configurations corresponding to fig. 1 to 7 shown in the respective embodiments.

An exposure apparatus (EX) according to the present invention is an exposure apparatus for exposing a substrate (P) through a Liquid (LQ), comprising: at least 2 substrate tables (PST1, PST2) each capable of holding and moving the substrate (P); an exposure Station (STE) that exposes the substrate (P) held on one of the substrate tables (PST1) by the optical system (PL) and the Liquid (LQ); and a measurement Station (STA) which measures the other substrate table (PST2) or the substrate (P) held on the substrate table (PST2), wherein the measurement in the measurement Station (STA) is performed in a state in which the Liquid (LQ) is disposed on the substrate table (PST2) or on the substrate (P).

The method for manufacturing a device of the present invention is characterized by using the exposure apparatus (EX) described above.

According to the present invention, the exposure process is performed in the liquid-immersed state (wet state) in which the liquid is disposed in the exposure station, and even when the measurement process is performed in the measurement station, since the measurement process is performed in the wet state in which the liquid is disposed, the measurement process can be performed under almost the same conditions as those in the exposure process. Therefore, the occurrence of measurement errors can be suppressed, and the exposure processing can be performed with high accuracy based on the measurement result.

An exposure method of the present invention is an exposure method for exposing a substrate (P) via a Liquid (LQ), comprising the steps of: the measurement Station (STA) measures the substrate (P) held on the substrate stage (PST) or the substrate stage (PST) in a state where the Liquid (LQ) is disposed on the substrate stage (PST) or the substrate (P), and exposes the substrate (P) on an exposure Station (STE) different from the measurement Station (STA) via the optical system (PL) and the Liquid (LQ).

The method for manufacturing a device of the present invention is characterized by using the above-described exposure method.

According to the present invention, when the measurement process is performed in the measurement station, the measurement process in the measurement station can be performed under substantially the same conditions as when the exposure process is performed in the exposure station in a wet state in which the liquid is disposed. Therefore, the occurrence of measurement errors can be suppressed, and the exposure processing can be performed with high accuracy based on the measurement result.

Further, an exposure apparatus (EX) of a different form according to the present invention is an exposure apparatus for exposing a substrate (P) through a Liquid (LQ), comprising: at least 2 substrate tables (PST1, PST2) each capable of holding and moving the substrate (P); an exposure Station (STE) that exposes the substrate (P) held on one of the substrate tables (PST1) by the optical system (PL) and the Liquid (LQ); a measurement Station (STA) for measuring another substrate table (PST2) or a substrate (P) held on the substrate table (PST 2); a1 st liquid supply device (10) that supplies liquid onto a substrate (P) held by a substrate stage (PST1) positioned on the exposure Station (STE); and a2 nd liquid supply device (30) that supplies a Liquid (LQ) to a substrate stage (PST2) positioned on the measurement Station (STA) or to a substrate (P) held on the substrate stage (PST 2).

According to the technical scheme, the invention at least has the following advantages and effects: since the exposure station can perform exposure in a wet state and measurement can be performed in a measurement station in a wet state almost the same as that in the exposure, exposure processing can be performed with high accuracy based on the measurement result.

In order to make the aforementioned and other objects, features and advantages of the invention comprehensible, preferred embodiments accompanied with figures are described in detail below.

Drawings

FIG. 1 is a schematic configuration diagram showing an embodiment of an exposure apparatus of the present invention;

FIG. 2 is a sectional view of a substrate stage;

FIG. 3 is a plan view as seen from above the substrate table;

FIG. 4 is a flow chart of an embodiment of an exposure method of the present invention;

FIG. 5 is a schematic view for explaining a case where the surface state of a substrate is changed in accordance with the amount of liquid disposed on the substrate;

FIG. 6 is a schematic view for explaining a case where the surface state of the substrate is changed in accordance with the position of the liquid immersion area; and

fig. 7 is a flowchart of an example of a process for manufacturing a semiconductor device.

1: alignment mark

2: optical element

2A: liquid contact surface

10: no. 1 liquid supply mechanism

20: no. 1 liquid recovery mechanism

30: no. 2 liquid supply mechanism

40: no. 2 liquid recovery mechanism

82: substrate alignment system (1 st mark detection system)

83: optical component (virtual component)

83A: liquid contact surface

84: photomask alignment system (2 nd mark detection system)

64(64A to 64C): load sensor (measuring device)

70: focus level detecting system (area detecting system)

AR 1: projection area

AR2, AR 2': liquid immersion area

EX: exposure device

And (LQ): liquid, method for producing the same and use thereof

MFM: fiducial marker

P: substrate

PFM: fiducial marker

PL: projection optical system

PST (PST1, PST 2): substrate table

S1-S24: illuminated area

STA: metering station

STE: exposure station

Detailed Description

The exposure apparatus of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic configuration diagram showing an embodiment of an exposure apparatus of the present invention.

In fig. 1, an exposure apparatus EX is a two-stage type exposure apparatus on which 2 substrate stages are mounted, and includes: the 1 st substrate table PST1 and the 2 nd substrate table PST2, which are independently movable on a common base BP, each can hold and move the substrate P. The dual stage exposure apparatus EX includes: an exposure station STE that exposes the substrate P held on the 1 st substrate stage PST1 (or the 2 nd substrate stage PST2) by the projection optical system PL and the liquid LQ; and a measurement station STA that measures the substrate P held on the 2 nd substrate stage PST2 (or the 1 st substrate stage PST1) or the substrate stage PST2(PST 1).

By the movement of the 1 st substrate stage PST1 and the 2 nd substrate stage PST2, the 1 st substrate stage PST1 and the 2 nd substrate stage PST2 can be exchanged between the exposure station STE and the measurement station STA. The measurement station STA carries the substrate P in and out (load) to and from the substrate stage PST1(PST 2). That is, the measurement station STA can exchange the substrate P. Then, when exposing the substrate P on the one substrate stage PST1(PST2) disposed on the exposure station STE, the other substrate stage PST2(PST1) disposed on the measurement station STA or the substrate P on the substrate stage is measured. Then, the substrate stage PST2(PST1) holding the substrate P whose measurement process has been completed on the measurement station STA is moved to the exposure station STE. Then, the substrate P on the substrate stage PST2(PST1) is exposed in the exposure station STE. On the other hand, the substrate stage PST1(PST2) holding the substrate P whose exposure process has been completed on the exposure station STE moves to the measurement station STA. The substrate P having been moved to the measurement station STA and having completed the exposure process is unloaded (unloaded) by the substrate stage PST1(PST 2). Then, a new substrate (unexposed substrate) P is loaded (loaded) onto the substrate stage PST1(PST2) to be measured. The overall operation of the exposure apparatus EX including the exposure station STE and the measurement station STA is controlled by the control apparatus CONT. Therefore, the control apparatus CONT is structurally a variety of measurement apparatuses (e.g., the XY interferometer 51, the Z interferometer 58, the focus level detection system 70, the load sensors 64A to 64C) or a drive system (e.g., the mask stage drive apparatus, the substrate stage drive apparatus, the Z tilt stage 52) connected to the exposure apparatus EX, and can transfer various measurement results or various drive commands between these apparatuses.

The exposure station STE includes: a mask stage MST for supporting a mask M; an illumination optical system IL that illuminates a mask M supported on the mask stage MST with an exposure beam EL; and a projection optical system (PL) that projects an image of the pattern of the mask M illuminated by the exposure light beam EL onto the substrate P supported on the substrate stage PST1(PST2) and performs exposure.

The exposure apparatus EX of the present embodiment is a liquid immersion exposure apparatus applied to a liquid immersion method, and is configured to substantially shorten an exposure wavelength, improve a resolution, and substantially enlarge a depth of focus. The exposure station STE includes: a1 st liquid supply mechanism 10 that supplies liquid LQ to the substrate P; and a1 st liquid recovery mechanism 20 that recovers the liquid LQ on the substrate P. When the exposure apparatus EX transfers at least the image of the pattern of the mask M onto the substrate P, a liquid LQ supplied from the 1 st liquid supply mechanism 10 forms a (local) liquid immersion area AR2 on a part of the substrate P including the projection area AR1 of the projection optical system PL. Specifically, the exposure apparatus EX adopts a local immersion method in which the liquid LQ is filled between the optical element 2 at the image plane side distal end of the projection optical system PL and the surface of the substrate P disposed on the image plane side of the projection optical system PL. Then, the exposure apparatus EX projects the pattern of the mask M onto the substrate P and performs exposure by irradiating the exposure beam EL passing through the mask M onto the substrate P through the projection optical system PL and the liquid LQ between the projection optical system PL and the substrate P.

The measurement station STA is also provided with: a2 nd liquid supply mechanism 30 having substantially the same configuration as the 1 st liquid supply mechanism 10; and a2 nd liquid recovery mechanism 40 having substantially the same configuration as the 1 st liquid recovery mechanism 20.

In the present embodiment, a scanning type exposure apparatus (so-called scanning step) is used as the exposure apparatus EX, which, on the one hand, moves the mask M and the substrate P synchronously in directions (opposite directions) different from each other in the scanning direction, and, on the other hand, exposes the pattern formed on the mask M onto the substrate P. In the following description, a direction coincident with the optical axis AX of the projection optical system PL is defined as a Z-axis direction, a direction (scanning direction) of synchronous movement of the mask M and the substrate P in a plane perpendicular to the Z-axis direction is defined as an X-axis, and a direction (non-scanning direction) perpendicular to the Z-axis and the X-axis direction is defined as a Y-axis direction. The rotation (tilt) directions of the X-axis, Y-axis, and Z-axis rotation are referred to as θ X, θ Y, and θ Z directions, respectively. The term "substrate" as used herein refers to an object having a photoresist coated with a photosensitive material on a semiconductor wafer, and the term "mask" includes a reticle (reticle) formed by projecting a reduced device pattern on the substrate.

The illumination optical system IL illuminates a mask M supported on the mask stage MST with an exposure beam EL. The illumination optical system IL includes an exposure light source, an optical integrator, a condenser lens, a relay lens system, a variable field stop, and the like. The optical integrator makes the illuminance of the light beam emitted from the exposure light source uniform. The condensing lens condenses the exposure light EL from the optical integrator. The variable field stop sets the illumination area on the mask M illuminated by the exposure light beam EL to a narrow shape. The illumination area set on the mask M is distributed with the illumination intensity by the illumination optical system ILThe homogenized exposure light beam EL illuminates. For example, far ultraviolet light (DUV light) such as luminance light (g-line, h-line, i-line) of ultraviolet rays emitted from a mercury lamp and KrF excimer laser light (wavelength 248nm), ArF excimer laser light (wavelength 193nm), and F can be used₂Vacuum ultraviolet light (VUV light) such as laser light (wavelength 157nm) is emitted as the exposure light EL from the illumination optical system IL. In this embodiment, ArF excimer laser light is used.

The mask stage MST is an object for supporting the mask M, which is movable 2-dimensionally (dimension) or 2-dimensionally in a plane perpendicular to the optical axis AX of the projection optical system PL (i.e., in the XY plane) and is slightly rotatable in the θ Z direction. The mask stage MST is driven by a mask stage driving device such as a linear motor. The mask stage driving device is controlled by the control device CONT. The movable mirror 50 is provided on the mask stage MST. Further, the XY interferometer 51 includes a laser interferometer provided at a position facing the movable mirror 50. The position of the mask M in the 2-dimensional direction and the rotation angle on the mask stage MST are measured in real time (real time) by the XY interferometer 51. The measurement result is output to the control unit CONT. The control unit CONT is connected to the XY interferometer 51 and the mask stage driving unit, and determines the position of the mask M supported on the mask stage MST when the mask stage driving unit is driven, based on the measurement result of the XY interferometer 51.

The projection optical system PL is a system for projecting and exposing a pattern of the mask M onto the substrate P at a predetermined magnification β, and is configured by a plurality of optical elements including an optical element (lens) 2 provided at an end portion of the substrate P side (image plane side of the projection optical system PL) and supported on the barrel PK. In the present embodiment, the projection optical system PL is a system in which the projection magnification β is reduced, for example, by 1/4 or 1/5. The projection optical system PL may be either an equal magnification system or an expansion system. The optical element (lens) 2 at the distal end of the projection optical system PL according to the present embodiment is designed to be detachable (replaceable) from the lens barrel PK, and the liquid LQ in the liquid immersion area AR2 can be brought into contact with the optical element 2.

In the present embodiment, pure water is used for the liquid LQ. Pure water can transmit not only ArF excimer laser light but also far ultraviolet light (DUV light) such as ultraviolet light (g-line, h-line, i-line) emitted from a mercury lamp and KrF excimer laser light (wavelength 248 nm).

In the present embodiment, the number of openings of the projection optical system suitable for using pure water for liquid immersion exposure is set to 1 or more (about 1.0 to 1.2).

The optical element 2 is formed of fluorite. Because of MgF attached to the surface of fluorite₂、Al₂O₃、SiO₂When the surface has a high affinity for water, the liquid LQ can be densely covered over substantially the entire liquid contact surface 2A of the optical element 2. That is, in the present embodiment, since the liquid (water) LQ having a high affinity with the liquid contact surface 2A of the optical element 2 can be supplied, the liquid contact surface 2A of the optical element 2 and the liquid LQ have high adhesion, and the optical path between the optical element 2 and the substrate P can be reliably filled with the liquid LQ. The optical element may be quartz having a high affinity for water. In addition, the liquid contact surface 2A of the optical element 2 may be subjected to hydrophilic (lyophilic) treatment to increase the affinity with the liquid LQ.

Hereinafter, the substrate stage PST (PST1, PST2) capable of holding and moving the substrate P will be described. Here, since the 1 st substrate stage PST1 and the 2 nd substrate stage PST2 have the same configuration, it is preferable to collectively refer to the 1 st substrate stage PST1 and the 2 nd substrate stage PST2 as "substrate stage PST".

The substrate stage PST is capable of holding and moving a substrate P, and includes: a Z-tilt table 52 for holding the substrate P by the substrate holder PH; and an XY stage 53 which supports the Z tilt stage 52. The XY stage 53 (substrate stage PST) is movable on the base BP and at least between the exposure station STE and the measurement station STA.

The substrate stage PST is driven by a substrate stage driving device such as a linear motor. The substrate stage driving device is controlled by the control device CONT. By driving the Z-tilt table 52, the position (focal position) in the Z-axis direction and the positions in the θ X and θ Y directions of the substrate P held on the Z-tilt table 52 can be controlled. Further, by driving the XY stage 53, the position in the XY direction of the substrate P (the position in the direction substantially parallel to the image plane of the projection optical system PL) and the position in the θ Z direction can be controlled. That is, the Z-tilt table 52 controls the focal position and tilt angle of the substrate P so that the surface of the substrate P can be aligned with the image plane of the projection optical system PL in an autofocus manner and an automatic level measurement manner, and the XY table 53 performs positioning (X, Y, θ Z direction) in the XY plane of the substrate P. The Z-tilt table 52 and the XY table 53 may be integrally designed.

An XY moving mirror 55 is provided on the substrate stage PST (Z tilt stage 52). Further, the XY interferometer 56 includes a laser dry-type spectrometer disposed at a position facing the XY moving mirror 55. The position of the substrate stage PST (more specifically, the substrate P) in the 2-dimensional direction and the rotation angle (position information about X, Y and the θ Z direction) are measured in real time by the XY interferometer 56, and the measurement results are output to the control unit CONT. The control device CONT is connected to the XY interferometer 56 and the substrate stage driving device. The position of the substrate stage PST holding the substrate P is determined by driving the substrate stage driving device based on the measurement result of the XY interferometer 56.

An XY interferometer 56 capable of measuring the XY-direction position and the rotation angle of the substrate stage PST is provided in each of the exposure station STE and the measurement station STA. Therefore, the XY interferometer 56 provided in the exposure station STE can measure the position of the substrate stage PST1(PST2) disposed in the exposure station STE, and the XY interferometer 56 provided in the measurement station STA can measure the position of the substrate stage PST2(PST1) disposed in the measurement station STA.

Further, a Z-moving mirror 57 is provided on the side surface of the Z-tilting table 52 of the substrate table PST 1. A Z interferometer 58 is provided at a position facing the Z moving mirror 57. The Z interferometer 58 is provided in the exposure station STE and the measurement station STA, respectively. The Z interferometer 58 can measure the position of the substrate stage PST, specifically, the position of the Z tilt stage 52 in the Z axis direction.

The exposure station STE and the measurement station STA are respectively provided with a focus level detection system 70 as a surface detection system for detecting the position information of the surface of the substrate P held on the substrate stage PST. The focus level detection system 70 includes: a light projecting section 70A for irradiating the substrate P with the detection light from the oblique direction; and a light receiving unit 70B that receives the detection light (reflected light) reflected by the substrate P. Further, for example, the structure disclosed in Japanese unexamined patent application, first publication No. 8-37149 may be used as the structure of the focus level detecting system 70. The detection result of the focus level detection system 70 is output to the control apparatus CONT. The control unit CONT detects the position information of the substrate P in the Z-axis direction and the tilt information of the substrate P in the θ X and θ Y directions based on the detection result of the focus level detection system 70. The control apparatus CONT is connected to the focus level detection system 70 and the Z-tilt table 52, drives the Z-tilt table 52 based on the detection result of the focus level detection system 70, and matches the image plane formed by the projection optical system PL and the liquid LQ with the substrate P by adjusting the position (focus position) and the tilt angle in the Z-axis direction of the substrate P held on the Z-tilt table 52 using the auto-focus system and the auto-level detection system.

Fig. 2 is an enlarged sectional view of the substrate stage PST (PST1, PST 2). The substrate stage PST is provided with a recess 60 on the Z-tilt table 52, and the substrate support PH is disposed on the recess 60. Then, the upper surface 61 of the Z-tilt table 52 other than the recess 60 is a flat surface (flat portion) having approximately the same height (same plane) as the surface of the substrate P held by the substrate holder PH. Since the upper surface 61 is provided around the substrate P so as to be substantially flush with the surface of the substrate P, the liquid LQ is held on the image plane side of the projection optical system PL even when the edge region E of the substrate P is subjected to liquid immersion exposure, and the liquid immersion region AR2 is formed satisfactorily. Further, although a gap of about 0.1 to 2mm exists between the edge portion of the substrate P and the upper surface 61 provided around the substrate P, the liquid LQ hardly flows in between due to the surface tension of the liquid LQ. Even when exposure is performed near the periphery of the substrate P, the liquid LQ is held below the projection optical system PL by the upper surface 61.

Further, the liquid-repellent treatment is performed on the upper surface 61 to suppress the liquid LQ from flowing out to the outside of the substrate P (outside of the upper surface 61) during the liquid immersion exposure. Further, even after the immersion exposure, the liquid LQ can be smoothly collected, and the liquid LQ can be prevented from remaining on the upper surface 61. For example, a liquid-repellent material such as a resin material made of polytetrafluoroethylene or a resin material made of propylene may be applied or a film made of the liquid-repellent material may be attached to the upper surface 61 to perform liquid-repellent treatment in the case of liquid-repellent. As a liquid-repellent material for imparting liquid repellency, a material that is insoluble in the liquid LQ can be used.

A plurality of load sensors 64(64A to 64C) are provided between the lower surface of the substrate support PH and the bottom surface 62 of the recess 60 in the Z-tilt table 52. In the present embodiment, 3 load sensors 64 are provided, and are constituted by load cells, for example. The load sensors 64A to 64C measure the force applied to the substrate P by the substrate support PH. The measurement result of the load sensor 64 is output to the control device CONT. The control unit CONT is connected to the load sensors 64A to 64C. The force applied to the substrate P and the distribution of the force can be obtained from the outputs of the load sensors 64A to 64C. Further, a load sensor may be provided below the Z-tilt table 52 to measure the force applied to the Z-tilt table 52. In this way, the load sensor can measure the force applied to the upper surface 61 of the Z-tilt table 52, for example. When the load sensors 64A to 64C are not provided below the substrate holders PH, they may be provided only below the Z-tilt table 52.

Returning to fig. 1, the 1 st liquid supply mechanism 10 supplies the liquid LQ between the projection optical system PL and the substrate P, and includes: a liquid supply device 11 having a pressurizing pump, a Tank (Tank) for storing liquid LQ, and the like; and a supply pipe 13 having one end connected to the liquid supply device 11 and the other end connected to a supply nozzle 14. The supply nozzle 14 has a supply port 12 disposed close to the substrate P so that the liquid LQ is supplied from above the substrate P. The liquid LQ supplied onto the substrate P via the supply pipe 13 and the supply port 12 of the supply nozzle 14, which is fed from the liquid supply device 11, fills the space between the optical element 2 at the tip of the projection optical system PL and the substrate P to form a liquid immersion area AR 2.

The 1 st liquid recovery mechanism 20 can recover the liquid LQ on the substrate P, and includes: a liquid recovery device 21 including a vacuum system such as a vacuum pump, a gas-liquid separator, a tank for storing the recovered liquid LQ, and the like; and a recovery pipe 23 having one end connected to the liquid recovery device 21 and the other end connected to the recovery nozzle 24. The recovery nozzle 24 has a recovery port 22 disposed close to the substrate P so as to recover the liquid LQ on the substrate P. By driving the vacuum system of the liquid recovery apparatus 21, the liquid LQ on the substrate P can be sucked and recovered into the liquid recovery apparatus 21 through the recovery port 22 of the recovery nozzle 24 and the recovery pipe 23.

When the liquid immersion area AR2 of the liquid LQ is formed on the substrate P, the controller CONT drives the 1 st liquid supply device 11 of the 1 st liquid supply mechanism 10 to supply a certain amount of the liquid LQ per unit time to the substrate P via the supply pipe 13 and the supply port 12 of the supply nozzle 14, and drives the 1 st liquid recovery device 21 of the 1 st liquid recovery mechanism 20 to recover a certain amount of the liquid LQ per unit time from the substrate P via the recovery pipe 23 and the recovery port 22 of the recovery nozzle 24. Therefore, the liquid LQ is disposed in the space between the optical element at the distal end of the projection optical system PL and the substrate P, and the liquid immersion area AR2 is formed.

The measurement station STA is provided with a substrate alignment system 82 for detecting an alignment mark of the substrate P or a reference mark PFM (described later) provided on the Z-tilt table 52. Further, a mask alignment system 84 is provided in the vicinity of the mask stage MST of the exposure station STE, and detects a reference mark MFM (described later) on the Z-tilt table 52 by the mask M and the projection optical system PL. For example, the structure disclosed in Japanese unexamined patent application, first publication No. Hei 4-65603 may be used as the structure of the substrate alignment system 82, and the structure disclosed in Japanese unexamined patent application, first publication No. Hei 7-176468 and its corresponding U.S. Pat. No. 5,646,413 may be used as the structure of the mask alignment system 84. The disclosures of the above publications or U.S. patents may be used as part of this specification, within the limits permitted by the national laws of the country specified in the international application (or of the selected country of choice).

The measurement station STA is provided with an optical member 83 having a liquid contact surface 83A almost identical to the liquid contact surface 2A of the optical element 2 at the distal end of the projection optical system PL. In the present embodiment, the optical member 83 constitutes a part of the optical system of the substrate alignment system 82 and is disposed to face the substrate P on the substrate stage PST.

The measurement station STA is provided with: a2 nd liquid supply mechanism 30 that supplies the liquid LQ between the optical member 83 and the substrate P; and a2 nd liquid recovery mechanism 40 that recovers the liquid LQ on the substrate P. As described above, the 2 nd liquid supply mechanism 30 and the 2 nd liquid recovery mechanism 40 have almost the same configurations as the 1 st liquid supply mechanism 10 and the 1 st liquid recovery mechanism 20 provided in the exposure station STE. That is, the 2 nd liquid supply mechanism 30 includes: a liquid supply device 31 having a pressurizing pump, a Tank (Tank) for storing liquid LQ, and the like; and a supply pipe 33 having one end connected to the liquid supply device 31 and the other end connected to a supply nozzle 34. The supply nozzle 34 has a supply port 32 disposed close to the substrate P so that the liquid LQ is supplied from above the substrate P. The liquid LQ supplied onto the substrate P via the supply pipe 33 and the supply port 32 of the supply nozzle 34, which is sent out by the liquid supply device 11, fills the space between the optical member 83 and the substrate P to form a liquid immersion area AR 2'.

The 2 nd liquid recovery mechanism 40 can recover the liquid LQ on the substrate P, and includes: a liquid recovery device 41 including a vacuum system such as a vacuum pump, a gas-liquid separator, a tank for storing the recovered liquid LQ, and the like; and a recovery pipe 43 having one end connected to the liquid recovery device 41 and the other end connected to the recovery nozzle 44. The recovery nozzle 44 has a recovery port 42 disposed close to the substrate P so as to recover the liquid LQ on the substrate P. By driving the vacuum system of the liquid recovery device 41, the liquid LQ on the substrate P can be sucked and recovered into the liquid recovery device 41 through the recovery port 42 of the recovery nozzle 44 and the recovery pipe 43.

The optical member 83 (liquid contact surface 83A) is designed to have about the same size and shape as the optical element (liquid contact surface 2A) of the projection optical system PL. The surface condition of the liquid contact surface 83A and the surface condition of the liquid contact surface 2A are also designed to be approximately the same. Specifically, the affinity (contact angle) of the liquid contact surface 83A for the liquid LQ is approximately the same as the affinity (contact angle) of the liquid contact surface 2A for the liquid LQ. The distance between the surface (or upper surface 61) of the substrate P on the substrate stage PST and the liquid contact surface 2A is designed to be approximately the same as the distance between the surface (or upper surface 61) of the substrate P on the substrate stage PST and the liquid contact surface 83A.

Therefore, the controller CONT can be formed in a state in which the liquid immersion area AR2 formed in the exposure station STE and the liquid immersion area AR 2' formed in the measurement occupation STA are approximately the same. Therefore, the force with which the liquid LQ is brought onto the substrate P (or the substrate stage PST) in the exposure station STE is approximately the same as the force with which the liquid LQ is brought onto the substrate P (or the substrate stage PST) in the measurement station STA.

Here, the force to bring the liquid LQ onto the substrate P may be, for example, the self weight of the liquid LQ, the pressure of the liquid LQ, the shearing force applied by the liquid LQ onto the substrate P when the substrate P moves in a state when the liquid LQ is filled between the substrate P and the liquid contact surfaces 2A, 83A, and the like.

In the present embodiment, the optical member 83 constitutes a part of the substrate alignment system 82, but may be provided independently of the substrate alignment system 82, and only the optical member 83 is supported by a predetermined support member. The optical member 83 may not have light transmittance. In short, the measurement station STA may be provided with a predetermined member having the same liquid contact surface as the liquid contact surface 2A of the optical element 2 at the distal end of the projection optical system PL. In this case, the optical member 83 and the predetermined member have the same liquid contact surface as the optical element (liquid contact surface 2A) of the projection optical system PL in the exposure station STE, and the liquid immersion region AR 2' formed in the measurement station STA is in a state approximately the same as the liquid immersion region AR2 formed in the exposure station STE, so that the optical member 83, the predetermined member, and the like are used as a dummy member for creating the same environment as the exposure station STE in the measurement station STA. On the other hand, when the optical member 83 for holding the liquid LQ is used as a part of the optical system of the substrate alignment system 82, alignment measurement can be performed in a state where the liquid immersion area AR 2' is formed.

Specific configurations of the two-stage exposure apparatus are described in, for example, Japanese unexamined patent application publication No. Hei 10-163099, Japanese unexamined patent application publication No. Hei 10-214783 and corresponding U.S. Pat. No. 6,400,441, and PCT International application publication No. 5,969,441 and corresponding U.S. Pat. No. 6,262,796, Japanese translation patent application laid-open No. 2000-505958. The disclosures of the above publications or U.S. patents may be used as part of this specification, within the limits permitted by the national laws of the country specified in the international application (or of the selected country of choice).

Fig. 3 is a plan view seen from above the substrate stage PST (PST1, PST 2). In fig. 3, the movable mirrors 55 are disposed on 2 edges of the substrate stage PST that are perpendicular to each other in a planar rectangular shape.

Further, a reference member 300 is disposed at a predetermined position outside the substrate P on the substrate stage PST. The reference member 300 is provided with a reference mark PFM detected by the substrate alignment system 82 and a reference mark MFM detected by the mask alignment system 84 in a predetermined positional relationship. The upper surface 301A of the reference member 300 is substantially flat and is designed to have approximately the same height (flush) as the surface of the substrate P held on the substrate stage PST and the upper surface 61 of the substrate stage PST. The upper surface 301A of the reference member 300 also functions as a reference surface of the focus level detection system 70.

The substrate alignment system 82 can detect the alignment mark 1 formed on the substrate P. As shown in fig. 3, a plurality of shot regions S1 to S24(shot regions) are formed on the substrate P, and a plurality of alignment marks 1 are provided on the substrate P corresponding to the plurality of shot regions S1 to S24. In fig. 3, the irradiation regions are adjacent to each other as shown in the drawing, but are actually separated from each other. The alignment mark 1 is provided on a scribe line (scribe line) on which the separation region is located.

Further, uneven illuminance sensors 400 disclosed in, for example, japanese unexamined patent application publication No. 57-117238 and corresponding U.S. patent No. 4,465,368 are disposed as measurement sensors on the substrate stage PST at positions outside the substrate P. The illuminance unevenness sensor 400 includes a planar rectangular upper plate 401. The upper surface 401A of the upper plate 401 is formed to be approximately flat and is designed to be approximately the same height (flush) as the surface of the substrate P held on the substrate stage PST and the upper surface 61 of the substrate stage PST. The upper surface 401A of the upper plate 401 is provided with a pin hole portion 470 through which light can pass. The upper surface 401A is covered with a light-shielding material such as chromium except for the pin holes 470. The disclosures of the above publications or U.S. patents may be used as part of this specification, within the limits permitted by the national laws of the country specified in the international application (or of the selected country of choice).

Further, on the substrate table PST, for example, the aerial image measuring sensor 500 disclosed in Japanese unexamined patent application publication No. 2002-14005 and corresponding U.S. patent publication No. 2002/0041377 is disposed at a position outside the substrate P as a measuring sensor. The aerial image measuring sensor 500 includes a planar rectangular upper plate 501. The upper surface 501A of the upper plate 501 is formed to be approximately a flat surface and is designed to have approximately the same height (flush) with the surface of the substrate P held on the substrate stage PST and the upper surface 61 of the substrate stage PST. The upper surface 501A of the upper plate 501 is provided with a slit portion 570 through which light can pass. The upper surface 501A is covered with a light-shielding material such as chromium except for the slit portion 570. The disclosure of the above-mentioned publication may be used as part of the present specification, within the limits permitted by the national laws of the country specified in the international application (or selected country).

Although not shown, the substrate table PST may be provided with an exposure sensor (illuminance sensor) disclosed in, for example, japanese patent application laid-open No. 11-16816 and corresponding american patent laid-open No. 2002/0061469, wherein the upper surface of the upper plate of the exposure sensor is designed to have a height (same surface) approximately equal to that of the surface of the substrate P held by the substrate table PST or the upper surface 61 of the substrate table PST. The disclosure of the above-mentioned publication may be used as part of the present specification, within the limits permitted by the national laws of the country specified in the international application (or selected country).

Then, the reference member 300 and the upper plates 401 and 501 are detachable from the substrate stage PST. When the liquid-proof property of the reference member 300 or the upper plates 401 and 501 deteriorates, the reference member 300 and the upper plates 401 and 501 may be replaced with a new one.

Next, the procedure of exposing the pattern of the mask M on the substrate P by using the exposure apparatus EX will be described with reference to the flowchart of fig. 4.

First, the substrate P before exposure processing is carried into the measurement station STA. The measurement station STA is provided with a2 nd substrate stage PST 2. The control apparatus CONT carries the substrate P before the exposure processing into (load) the 2 nd substrate stage PST2 of the measurement station STA by using a not-shown carrying system. The carried-in substrate P is held on the substrate support PH on the 2 nd substrate table PST 2. On the other hand, the exposure station STE is provided with a1 st substrate stage PST1 that holds the substrate P whose measurement process has been completed in the measurement station STA.

[ detection of Z position in Wet State (measuring station) ]

The control device CONT starts the measurement process related to the 2 nd substrate table PST2 holding the substrate P in the measurement station STA. First, the control apparatus CONT moves the substrate stage PST so that the optical member 83 and the reference member 300 face each other. Then, the controller CONT supplies and collects the liquid LQ by using the 2 nd liquid supply mechanism 30 and the 2 nd liquid collection mechanism 40 of the measurement station STA. The liquid LQ is disposed between the reference member 300 and the optical member 83 on the substrate stage PST disposed on the measurement station STA, thereby forming a liquid immersion area AR 2'. Then, the control apparatus CONT, on the one hand, adjusts the position (position in the Z direction) and posture (tilts θ X, θ Y) of the Z-tilt table 52, and on the other hand, detects, by the liquid LQ, the position information on the surface (upper surface) 301A of the reference member 300 on the 2 nd substrate table PST2 in the Z-axis direction using the focus level detection system 70 (step SA 1).

At the same time, the control apparatus CONT detects position information about the Z-axis direction of the Z-tilt table 52 using the Z interferometer 58. Therefore, the position information of the surface (reference surface) 301A of the reference member 300 in the coordinate system defined by the Z interferometer 58 is measured by the Z interferometer 58, and specifically, when the position of the surface (reference surface) 301A of the reference member 300 coincides with the focus position of the focus level detection system 70, the position Z in relation to the Z-axis direction of the 2 nd substrate stage PST2 (Z-tilt stage 52) at this time₀Measured by the Z interferometer 58. And position Z₀The relevant information is stored in the control unit CONT.

Next, the controller CONT causes the optical member 83 to face the substrate P held on the 2 nd substrate stage PST2 in the measurement station STA, supplies and recovers the liquid LQ by the 2 nd liquid supply mechanism 30 and the 2 nd liquid recovery mechanism 40, and forms a liquid immersion area AR 2' of the liquid LQ on the substrate P. Then, the control apparatus CONT detects, by using the focus level detection system 70 provided in the measurement station STA, positional information concerning a plurality of detection points on the surface of the substrate P held on the 2 nd substrate stage PST2 in the Z-axis direction by the liquid LQ (step SA 2).

For example, the control unit CONT monitors the output of the XY interferometer 56, moves the XY stage 53 of the 2 nd substrate stage PST2, and detects position information on the Z direction of a plurality of points in the plane of the surface of the substrate P (in the XY plane) by the liquid LQ using the focus level detection system 70. Specifically, the detection light emitted from the light projecting section 70A of the focus level detection system 70 moves the XY table 53 of the 2 nd substrate table PST2 to irradiate a plurality of positions on the surface of the substrate P, and drives the Z tilt table 52 to adjust the position (position in the Z direction) and posture (tilt θ X, θ Y) of the Z tilt table 52 and detect Z position information of a plurality of points on the surface of the substrate P. The position information detection result from the focus level detection system 70 is stored in the control unit CONT in correspondence with the position in the XY plane of the substrate P (the 2 nd substrate stage PST 2). The position information from the focus level detection system 70 may be detected for each of all of the irradiation regions S1 to S24 on the substrate P, or may be detected for only a part of the irradiation regions.

Here, when the control apparatus CONT detects position information of a plurality of detection points on the surface of the substrate P by the liquid LQ using the focus level detection system 70, the Z position information of the Z tilt table 52 is measured by using the Z interferometer 58. Thus, the Z-tilting table 52 (further, the position Z) can be derived₀) In positional relation to the surface of the substrate P. In other words, the Z interferometer 58 measures the positional information of the surface of the substrate P in the predetermined coordinate system.

Then, the control unit CONT creates corresponding data based on the position information of the plurality of detection points on the surface of the detected substrate P. An approximate plane (approximate surface) of the surface of the substrate P is obtained based on the corresponding data. Therefore, the control apparatus CONT can determine the Z-tilt table 52 (position Z)₀) An approximate plane of the surface of the substrate P as a reference (step SA 3).

[ detection of XY position in Wet State (measuring station) ]

Next, the control apparatus CONT moves the substrate stage PST so as to determine the position of the detection region of the substrate alignment system 82 on the reference member 300. Specifically, the control apparatus CONT moves the substrate stage PST so that the optical member 83 of the substrate alignment system 82 faces the reference member 300. Then, the controller CONT supplies and recovers the liquid LQ by the 2 nd liquid supply mechanism 30 and the 2 nd liquid recovery mechanism 40, and forms a liquid immersion area AR 2' of the liquid LQ on the reference member 300. In a state when the liquid contact surface 83A of the optical member 83 and the surface 301A of the reference member 300 are both in contact with the liquid LQ, the control apparatus CONT measures the reference mark PFM on the reference member 300 by the liquid LQ using the substrate alignment system 82. The position of the substrate stage PST when the substrate alignment system 82 measures the reference mark PFM is measured by the XY interferometer 56. Therefore, the control apparatus CONT can obtain the position information of the reference mark PFM in the predetermined coordinate system by using the XY interferometer 56 (step SA 4).

Next, the controller CONT supplies and recovers the liquid LQ by using the 2 nd liquid supply mechanism 30 and the 2 nd liquid recovery mechanism 40 of the measurement station STA, and forms a liquid immersion area AR 2' by disposing the liquid LQ on the substrate P or the substrate stage PST disposed on the measurement station STA. Then, the controller CONT moves the substrate stage PST in the XY direction, and sequentially places the plurality of alignment marks 1 provided in association with the plurality of irradiation regions S1 to S24 on the detection region of the substrate alignment system 82. The controller CONT sequentially measures the plurality of alignment marks 1 on the substrate P with the liquid LQ by the substrate alignment system 82 in a state where the liquid LQ is disposed on the substrate P to form the liquid immersion area AR 2. In this case, the liquid LQ in the liquid immersion area AR 2' may contact the liquid contact surface 83A of the optical member 83 of the substrate alignment system 82, and the substrate alignment system 82 may measure the alignment mark 1 in a state where the liquid contact surface 83A of the optical member 83 is in contact with the liquid LQ. The position of the substrate stage PST when the substrate alignment system 82 measures the alignment mark 1 is monitored by the XY interferometer 56. As a result, the control apparatus CONT obtains position information of each alignment mark 1 in the predetermined coordinate system by using the XY interferometer 56 (step SA 5).

The substrate alignment system 82 has a detection reference position in the coordinate system defined by the XY interferometer 56, and the position information of the alignment mark 1 is detected as a deviation from the detection reference position.

In the substrate alignment system 82 of the present embodiment, an FIA (field image alignment) system is used, the substrate stage PST is made stationary, illumination light such as white light from a halogen lamp is applied to the mark, an image of the obtained mark in a predetermined imaging field is formed by an imaging element, and image processing is performed to measure the position of the mark.

Therefore, in this embodiment, the position information of the irradiation regions S1 to S24 is obtained by the so-called EGA (enhanced Global alignment) system disclosed in, for example, Japanese unexamined patent application publication No. 61-44429. Therefore, the controller CONT specifies at least three areas (EGA irradiation areas) among the plurality of irradiation areas S1 to S24 formed on the substrate P, and detects the alignment mark 1 attached to each irradiation area by using the substrate alignment system 82. The disclosure of the above-mentioned publication may be used as part of the present specification, within the limits permitted by the national laws of the country specified in the international application (or selected country). The substrate alignment system 82 may detect all the alignment marks 1 on the substrate P.

The control apparatus CONT obtains the respective positional information of the plurality of irradiation regions S1 to S24 on the substrate P by arithmetic processing (EGA processing) based on the detection result of the positional information of the alignment mark 1 (step SA 6).

In the EGA system, after the position information (coordinate position) of the alignment mark 1 attached to the irradiation area of the EGA is detected by using the substrate alignment system 82, an error parameter (offset, scale, rotation, orthogonality) related to the alignment characteristics (position information) of the irradiation areas S1 to S24 on the substrate P is determined by performing statistical calculation by the least square method or the like based on the detected value and the design value. Then, the coordinate values in the design are corrected for all the irradiation regions S1 to S24 on the substrate P based on the determined parameter values. Thereby determining the positional relationship between the substrate alignment system 82 and each irradiation area on the substrate P placed on the substrate stage PST. That is, the control apparatus CONT can know, from the output of the laser interferometer 56, at which position the reference position for detection of the substrate alignment system 82 is located for each shot region on the substrate P.

Here, as shown in fig. 1, the detection region of the substrate alignment system 82 of the measurement station STA and the detection region of the focus level detection system 70 are designed to be approximately the same or close to each other. Then, the liquid immersion area AR 2' can be simultaneously irradiated with two kinds of detection light, the detection light of the substrate alignment system 82 and the detection light of the focus level detection system 70. In short, both the detection area of the substrate alignment system 82 and the detection area of the focus level detection system 70 of the measurement station STA are provided inside the liquid immersion area AR 2'. Therefore, the controller CONT can perform the measurement in the substrate alignment system 82 and the measurement in the focus level detection system 70 at approximately the same time. Specifically, step SA1 and step SA4 described above may be performed simultaneously. Alternatively, the steps SA2 and SA5 may be performed simultaneously. Therefore, the measurement processing time can be shortened.

After the position information of the plurality of alignment marks 1 is detected (step SA5), the surface information of the substrate P may be detected (step SA2), or the surface information of the substrate P and the position information of the alignment marks 1 may be alternately detected. Alternatively, the XY position of the marker may be detected (steps SA4 and SA5), and then the Z position may be detected (steps SA1 and SA 2). That is, the order of the steps may be changed arbitrarily.

Then, the control apparatus CONT obtains the positional relationship between the reference mark PFM and the alignment mark 1 on the substrate P from the positional information of the reference mark PFM measured in step SA4 and the positional information of the plurality of alignment marks 1 on the substrate P measured in step SA 5. The EGA processing of step SA6 is performed to determine the positional relationship between the plurality of alignment marks 1 and the irradiation regions S1 to S24. Therefore, the controller CONT can determine the positional relationship between the reference mark PFM and the plurality of irradiation regions S1 to S24 on the substrate P, respectively, based on the determined positional relationship between the reference mark PFM and the plurality of alignment marks 1 on the substrate P. As described above, since it is known that the reference mark PFM and the reference mark MFM are designed in a predetermined positional relationship, the control device CONT can determine the positional relationship between the reference mark MFM in the XY plane and the plurality of irradiation regions S1 to S24 on the substrate P, respectively.

The 2 nd substrate stage PST2 at the end of the measurement processing (step SA1 to step SA6) in the measurement station STA described above moves to the exposure station STE. Before the substrate stage PST is moved from the measurement station STA to the exposure station STE, the controller CONT uses the 2 nd liquid recovery mechanism 40 to recover the liquid LQ on the substrate P or on the substrate stage PST. On the other hand, the 1 st substrate stage PST1 disposed on the exposure station STE moves to the measurement station STA. Here, in the exposure station STE, the measurement process on the 2 nd substrate stage PST2 in the measurement station STA is performed together with the exposure process on the substrate P held on the 1 st substrate stage PST 1.

Then, the 1 st substrate stage PST1 holding the substrate P at the end of the exposure process is moved to the measurement station STA. The substrate P moved to the 1 st substrate stage PST1 in the measurement station STA is carried out (unloaded). Then, the substrate P to be subjected to the new exposure process is carried in (loaded) to the 1 st substrate stage PST1 of the measurement station STA to perform the above-described measurement process.

[ detection of XY position in Wet State (Exposure station) ]

On the other hand, the controller CONT performs measurement processing on the 2 nd substrate stage PST2 moved from the measurement station STA to the exposure station STE by using the mask alignment system 84. The control apparatus CONT detects the reference mark MFM on the reference member 300 by the mask alignment system 84, that is, moves the substrate stage PST in the XY direction so that the optical element 2 at the tip end of the projection optical system PL faces the reference member 300. Then, the control apparatus CONT uses the 1 st liquid supply mechanism 10 and the 1 st liquid recovery mechanism 20 of the exposure station STE to supply and recover the liquid LQ so as to fill the space between the optical element 2 of the projection optical system PL and the reference member 300 with the liquid LQ to form the liquid immersion area AR 2. Then, the control apparatus CONT detects the reference mark MFM by using the mask M, the projection optical system PL, and the liquid LQ by using the mask alignment system 84 (step SA 7).

That is, the controller CONT detects the positional relationship between the marks on the mask M and the reference marks MFM by the projection optical system PL and the liquid LQ. Therefore, the positional relationship between the position of the mask M (i.e., the projection position information of the image of the pattern of the mask M) and the reference mark MFM in the XY plane can be measured by the projection optical system PL and the liquid LQ.

In the mask alignment system 84 of the present embodiment, a vra (visual reticule alignment) system is used to irradiate light to the mark, and image data of the mark captured by a CCD camera or the like is subjected to image processing to detect the mark position.

Then, the control device CONT makes the projection positions of the patterns of the mask M on the substrate P and the projection areas S1 to S24 between the projection optical system PL and the liquid LQ coincide with each other based on the information on the positional relationship between the reference mark PFM measured by the substrate alignment system 82 and the irradiation areas S1 to S24 on the substrate P, the information on the positional relationship between the projection position of the pattern of the mask M and the reference mark MFM measured by the mask alignment system 84, and the information on the positional relationship between the known reference mark PFM and the reference mark MFM designed based on the predetermined positional relationship.

[ detection of Z position in Wet State (Exposure station) ]

The controller CONT moves the substrate stage PST so that the optical element 2 of the projection optical system PL and the substrate P face each other, and then supplies and collects the liquid LQ by the 1 st liquid supply mechanism 10 and the 1 st liquid collection mechanism 20, so as to form a liquid immersion area AR2 of the liquid LQ on the substrate P.

Then, the controller CONT detects Z position information of 1 detection point on the surface of the substrate P on the 2 nd substrate stage PST2 or the detection points fewer than the detection points detected by the measurement station STA by using the liquid LQ by using the focus level detection system 70 provided in the exposure station STE (step SA 8).

Further, when the control apparatus CONT detects position information of a detection point on the surface of the substrate P by using the focus level detection system 70, the Z position information of the Z tilt table 52 is measured by using the Z interferometer 58. The position (relative position Z) of the Z-axis direction of the Z-tilting table 52 is detected by the Z-interferometer 58₀The location of (d). Since the approximate plane of the surface of the substrate P is obtained in step SA3, the control device CONT can derive the Z-tilt table 52 (position Z) in the exposure station STE based on the detection result by using the Z-position information in 1 (or more) detection points of the surface of the substrate P and the position information in the XY plane in the exposure station STE₀) Is a baseQuasi-planar to the surface of the substrate P.

Further, the control apparatus CONT moves the 2 nd substrate stage PST2, detects the surface (reference surface) 301A of the reference member 300 by the focus level detection system 70 in a state where the space between the optical element 2 of the projection optical system PL and the reference member 300 is filled with the liquid LQ, and measures the relationship between the image plane formed by the projection optical system PL and the liquid LQ and the surface 301A of the reference member 300 (step SA 9).

Here, the focus level detection system 70 can detect the positional relationship (displacement) between the image plane formed by the liquid LQ and the detected plane by the projection optical system PL in a standby state. Therefore, the focus level detecting system 70 detects the surface 301A of the reference member 300 at the position Z in the wet state₀As a reference, the positional relationship between the image plane formed by the projection optical system PL and the liquid LQ and the surface of the substrate P can be obtained.

In addition, the aerial image measuring sensor 500 may be used to measure the image plane formed by the projection optical system PL and the liquid LQ. At this time, the controller CONT causes the optical element 2 of the projection optical system PL and the upper surface (reference surface) 501A of the upper plate 501 of the aerial image measuring sensor 500 to face each other, and fills the space between the optical element 2 and the upper surface 501A with the liquid LQ to form the liquid immersion area AR 2. In this state, the control device CONT irradiates the exposure light beam EL onto the aerial image measuring sensor 500 through the projection optical system PL and the liquid LQ, while moving the Z tilt table 52 in the Z-axis direction and using the aerial image measuring sensor 500 to detect the most excellent image formation surface. Then, the position of the Z tilting table 52 at the time of detecting the most excellent imaging surface is measured by the Z interferometer 58, and the Z position is obtained₀The position of an image plane formed by the projection optical system PL and the liquid LQ as a reference. Therefore, the positional relationship between the image plane formed by the projection optical system PL and the liquid LQ and the surface of the substrate P can be obtained based on the position of the image plane.

Before the exposure of the substrate P, the control device CONT emits the exposure light beam EL through the illumination optical system IL in a state where the liquid LQ is filled between, for example, the optical element 2 of the projection optical system PL and the upper surface 401A of the upper plate 401 of the uneven illuminance sensor 400, and can detect the illuminance distribution of the exposure light beam EL in the projection area AR1 through the uneven illuminance sensor 400 by the projection optical system PL and the liquid LQ. The control device CONT sequentially moves the pin hole portion 470 of the uneven illuminance sensor 400 at a plurality of positions within the irradiation region (projection region) irradiated with the exposure light beam EL in a state where the liquid immersion region of the liquid LQ is formed on the upper surface 401A of the uneven illuminance sensor 400. The control device CONT appropriately corrects the illuminance distribution of the exposure light beam EL based on the detection result of the uneven illuminance sensor 400 so that the illuminance distribution of the exposure light beam EL in the projection area AR1 of the projection optical system PL is in a desired state. Similarly, the control device CONT measures the illuminance of the exposure light beam EL using the above-described illuminance sensor, and performs appropriate correction based on the measurement result.

[ alignment and Exposure in Wet State (Exposure station) ]

When the above measurement processing is completed, the controller CONT performs supply and collection of the liquid LQ by the 1 st liquid supply mechanism 10 and the 1 st liquid collection mechanism 20 and moves the substrate stage PST so as to move the liquid immersion area AR2 below the projection optical system PL onto the substrate P in order to expose the irradiation areas S1 to S24 on the substrate P. Since the upper face 61 of the substrate stage PST including the reference member 300 and the surface of the substrate P are at almost the same height, respectively, the substrate stage PST can be moved in the XY directions in a state where the liquid LQ is held below the projection optical system PL. Then, scanning exposure is performed on each of the irradiation regions S1 to S24 on the substrate P using each piece of information obtained in the measurement process (step SA 10).

Then, in the scanning exposure of the respective shot regions S1 to S24, the positions of the respective shot regions S1 to S24 on the substrate P and the mask M are matched with each other based on the information on the positional relationship between the reference mark PFM and the respective shot regions S1 to S24 and the projection position information of the image of the pattern of the mask M obtained by using the reference mark MFM.

In addition, during the scanning exposure of the respective irradiation regions S1-S24, the position Z obtained by the measurement station STA is used₀The positional relationship between the surface (reference surface) 301A of the reference member 300 and the surface of the substrate P, which is the reference, and the positional relationship between the surface 301A of the reference member 300 and the image plane formed by the projection optical system PL and the liquid LQ, which is obtained by the exposure station STE, are used as the reference, and the positional relationship between the substrate P and the image plane formed by the projection optical system PL and the liquid LQ is adjusted (corrected) and the exposure is performed without using the focus level detection system 70 of the exposure station STE. In short, in the liquid immersion scanning exposure, the Z-tilt table 52 is driven based on the information on the approximate surface of the substrate P obtained in steps SA8 and SA9 and the information on the Z position of the surface (reference surface) 301A of the reference member 300, and the image plane between the projection optical system PL and the liquid LQ and the surface (exposure surface) of the substrate P are aligned. Therefore, the liquid immersion exposure can be performed on each of the irradiation regions S1 to S24 with the posture (Z, θ x, and θ Y) of the substrate P appropriately adjusted. When the positional information is detected for all of the shot regions S1 to S24 on each substrate P in step SA2, the relationship with the position in the Z direction between the surfaces 301A of the reference members 300 is obtained for each shot region. On the other hand, when only the position information in the Z direction is detected in the partial irradiation region on the substrate P in step SA2, it is also possible to obtain the position information in the Z direction in the position in the XY plane corresponding to each irradiation region by calculation or the like with reference to the obtained approximate surface (represented by X, Y, Z coordinates).

In addition, in the scanning exposure, the focus level detection system 70 of the exposure station STE may be used to detect the surface information (Z position information in XY plane) of the surface of the substrate P, and to confirm the adjustment result of the positional relationship between the surface of the substrate P and the image plane formed by the liquid LQ.

In the above embodiment, the positional relationship between the surface of the substrate P and the image plane formed by the liquid LQ is adjusted by driving the Z-tilt table 52 for holding the substrate P, but the image plane may be matched with the surface of the substrate P by moving a part of the plurality of lenses constituting the mask M or the projection optical system PL.

After the liquid immersion exposure process on the substrate P on the 2 nd substrate stage PST2 is completed, the controller CONT moves the 2 nd substrate stage PST2 of the exposure station STE to the measurement station STA. At the same time, the 1 st substrate stage PST1 holding the substrate P whose measurement processing has been completed in the measurement station STA is moved to the exposure station STE.

The control apparatus CONT carries out the substrate P, which has been subjected to the exposure process and is still held on the 2 nd substrate stage PST2 in the measurement station STA, by using a transport system not shown.

As described above, the measurement process may be performed by the measurement station STA if the exposure (liquid immersion exposure) is performed in a wet state in which the liquid LQ is disposed on the substrate P in the exposure station STE of the two-stage exposure apparatus EX. When the measurement is performed in a wet state in which the liquid LQ is disposed on the substrate P or the substrate stage PST, the measurement process can be performed under almost the same conditions as those in the liquid immersion exposure process. Therefore, the occurrence of measurement errors can be suppressed, and the exposure processing can be performed with high accuracy based on the measurement results.

That is, when the liquid LQ is disposed on the substrate P or the substrate stage PST, if a force is applied to the substrate P or the substrate stage PST by the pressure or the self-weight of the liquid LQ, the substrate P or the substrate stage PST may be slightly deformed. At this time, for example, the surface shape of the substrate P (or the substrate stage PST) in a non-liquid immersion state (dry state) in which the liquid LQ is not disposed and the surface shape of the substrate P (or the substrate stage PST) in a liquid immersion state (wet state) in which the liquid LQ is disposed may differ from each other. Thus, for example, the measurement result of the surface position information of the substrate P in the dry state and the actual surface position of the substrate P in the wet state may be different from each other.

Alternatively, the refractive index of the liquid LQ may cause a difference between the optical path of the detected light when the surface information of the substrate P is measured through the liquid LQ and the optical path of the detected light when the surface information is not measured through the liquid LQ. In such a case, it is difficult to align the surface of the substrate P with the image plane formed by the projection optical system PL and the liquid LQ, for example, by adjusting the surface position of the substrate P based on the measurement result in the dry state.

However, when the measurement is performed in the wet state in the measurement station STA and the surface position of the substrate P when the substrate P is exposed in the wet state on the exposure station STE is adjusted (corrected) based on the measurement result, the measurement result in the measurement station STA can be reflected in the exposure on the exposure station STE, and the surface position of the substrate P can be set at a desired position.

In the present embodiment, when the liquid immersion area AR2 'is formed in the measurement station STA, the liquid contact surface 2A of the optical element 2 of the projection optical system PL is made almost the same as the liquid contact surface 83A so as to contact the liquid LQ, and thus the state of the liquid immersion area AR2 formed in the exposure station STE and the state of the liquid immersion area AR 2' formed in the measurement station STA can be almost the same. Therefore, the measurement accuracy in the measurement station STA can be increased.

Further, the exposure apparatus EX in the present embodiment is a two-stage type exposure apparatus, and by measuring the surface position information of the substrate P in advance in the measurement station STA, the positional relationship between the surface of the substrate P and the image plane between the projection optical system PL and the liquid LQ can be efficiently adjusted in the exposure station STE based on the measurement result.

In the present embodiment, the approximate plane of the substrate P is determined in advance based on the surface position information of the substrate P measured by the measuring station STA. Based on the obtained result, in order to align the surface of the substrate P and the image plane between the projection optical system PL and the liquid LQ, the Z-tilt table 52 needs to be driven under forward feed (feed forward) control. Therefore, even if there are minute deformation components (high-order deformation components) on the surface of the substrate P, the adjustment operation of the positional relationship by the Z-tilt table 52 can be followed by the deformation components, and the image plane formed by the projection optical system PL and the liquid LQ can be made to coincide with the surface (exposure surface) of the substrate P. For example, in the configuration in which the Z-stage 52 is driven by feedback (feedback) control, the reactivity (follow-up property) when the Z-stage 52 is driven is limited in accordance with the response frequency of the feedback system or the like, in order to make the image plane formed by the projection optical system PL and the liquid LQ coincide with the surface of the substrate P, based on the detection result of the focus level detection system 70 provided in the exposure station STE. However, when the Z-stage 52 is driven by feed forward control with reference to the approximate plane of the substrate P obtained in advance, the Z-stage 52 can be driven with high responsiveness (followability).

In addition, the focus level detection system 70 of the exposure station STE is used to detect the surface information of the surface of the substrate P during scanning exposure, and the surface information detected during scanning exposure is added to the approximate plane of the substrate P previously obtained by the measurement station STA, and the Z-tilting stage 52 can be driven to adjust the positional relationship between the surface of the substrate P and the image plane. In any case, the above-described feed forward control and feedback control may also be used in combination.

In the present embodiment, the substrate alignment system 82 of the measurement station STA measures the alignment mark 1 on the substrate P and the reference mark PFM of the reference member 300 in the wet state, but may measure the marks in the dry state. The positional relationship between the substrate P and the reference mark PFM can be obtained.

However, in the above embodiment, the position of the surface of the substrate P at the time of exposing the substrate P on the exposure station STE is corrected based on the measurement result of the focus level detection system 70 of the measurement station STA, but the position of the surface of the substrate P on the exposure station STE may be corrected based on the measurement result of the load sensor 64. Therefore, as described above, the load sensors 64A to 64C are provided below the substrate support PH for holding the substrate P, and the force applied to the substrate P by the liquid LQ can be measured via the substrate support PH. Then, by correcting the surface position of the substrate P in consideration of the measurement result of the load sensor 64, the control device CONT can more accurately match the position of the image plane formed by the projection optical system PL and the liquid LQ with the surface of the substrate P.

In summary, in the above-described embodiment, the surface position of the substrate P is measured in a wet state by the measuring station STA to derive the approximate plane of the substrate P, and the Z-position information of 1 detection point on the surface of the substrate P is detected by the exposure station STE to derive the Z-position₀An approximate plane of the surface of the substrate P as a reference. At this time, if the force applied to the substrate P by the liquid LQ in the liquid immersion area AR 2' formed in the measurement station STA and the force applied to the substrate P by the liquid LQ in the liquid immersion area AR2 formed in the exposure station STE are equal, the positions of the image plane formed by the projection optical system PL and the liquid LQ and the surface of the substrate P can be favorably matched. However, if the force applied to the substrate P by the liquid LQ in the liquid immersion area AR 2' formed in the measurement station STA and the force applied to the substrate P by the liquid LQ in the liquid immersion area AR2 formed in the exposure station STE are not equal to each other, an error in measurement occurs.

For example, due to variations in the performance of the liquid supply mechanism or the liquid recovery mechanism, the amount (weight) of the liquid LQ in the liquid immersion area AR 2' formed in the measurement station STA and the amount (weight) of the liquid LQ in the liquid immersion area AR2 formed in the exposure station STE may differ from each other at that time. For example, if the amount (weight) of the liquid LQ in the liquid immersion area AR 2' formed in the measurement station STA is a, the surface shape of the substrate P is the shape shown by the line L1 in fig. 5. On the other hand, when the amount (weight) of the liquid LQ in the liquid immersion area AR2 formed in the exposure station STE is a + α, the surface shape of the substrate P becomes the shape shown by the line L2 in fig. 5. Therefore, the variation in the surface shape of the substrate P changes almost proportionally in a manner corresponding to the weight of the liquid LQ.

At this time, if the position of the surface of the substrate P in the exposure station STE is corrected with reference to the line L1 in the approximate plane of the substrate P obtained by the measurement station STA, since the actual surface shape of the substrate P in the exposure station STE is the shape of the line L2, it is difficult to make the surface of the substrate P coincide with the image plane formed by the projection optical system PL and the liquid LQ.

Therefore, the controller CONT corrects the surface position of the substrate P in the exposure station STE based on the measurement result of the load sensor 64.

Specifically, the controller CONT measures the force applied to the substrate P by the liquid LQ using the load sensors 64A to 64C in a state where the liquid LQ is disposed on the substrate P by the 2 nd liquid supply mechanism 30 and the 2 nd liquid recovery mechanism 40 in the measurement station STA. The control unit CONT measures the surface shape of the substrate P at this time by using the focus level detection system 70. The control unit CONT stores weighting information (weighting distribution information) measured by the load sensors 64A to 64C and shape information measured by the focus level detection system 70.

Next, the controller CONT moves the substrate stage PST holding the substrate P measured by the measuring station STA to the exposure station STE. Then, the controller CONT measures the force applied to the substrate P by the liquid LQ using the load sensors 64A to 64C in a state where the liquid LQ is disposed on the substrate P by the 1 st liquid supply mechanism 10 and the 1 st liquid recovery mechanism 20 in the exposure station STE. The control unit CONT measures Z position information of 1 detection point of the substrate P at that time by using the focus level detection system 70.

When the result of measurement by the load sensors 64A to 64C at the measurement station STA is a, the surface shape of the substrate P measured by the focus level detection system 70 at this time is line L1, and the result of measurement by the load sensors 64A to 64C at the exposure station STE is a + α, the control device CONT estimates that the surface shape of the substrate P in the state where the liquid LQ is placed at the exposure station STE is the shape of line L2. Therefore, the control apparatus CONT can correct the approximate plane of the substrate P obtained by using the focus level detection system 70 with reference to the measurement results of the load sensors 64A to 64C.

Then, the control device CONT determines a correction amount related to the driving amount of the Z-tilt table 52 used when the surface of the substrate P on which the line L2 is located coincides with the image plane interposed between the projection optical system PL and the liquid LQ.

Here, from the measurement result of the load sensor 64 in the exposure station STE, information on the rigidity of the substrate P or the substrate holder PH for holding the substrate P is necessary in order to correct the approximate plane of the substrate P, and the information on the rigidity can be obtained in advance by, for example, experiments or simulations. For example, the rigidity of the substrate P or the substrate support PH can be determined from the measurement result of the load sensor 64 when different amounts of the liquid LQ are placed on the substrate P held by the substrate support PH and the measurement result (the amount of deformation of the substrate) of the focus level detection system 70 at that time, that is, the amount of deformation of the substrate P (substrate support PH) corresponding to the force applied by the liquid LQ. Then, the controller CONT stores information on the rigidity, and can derive the approximate plane of the substrate P in the exposure station STE with reference to the measurement result of the load sensor 64 in the exposure station STE and the approximate plane of the substrate P derived in the measurement station STA.

Therefore, in the measuring station STA, in a state where the liquid LQ is disposed on the substrate P, the approximate plane of the substrate P can be obtained based on the measurement result of the focus level detecting system 70, and the force applied to the substrate P by the liquid LQ at that time is measured by the load sensor 64, so that the line L1 where the 1 st surface information about the substrate P is located is obtained. Next, in the state where the liquid LQ is disposed on the substrate P in the exposure station STE, the load sensor 64 measures the force applied to the substrate P by the liquid LQ, and based on the measurement, the line L2 on which the information of the 2 nd surface is located can be obtained. Then, the correction amount of the driving amount of the Z-tilt table 52 used for correcting the surface position of the substrate P in the exposure station STE is determined based on the line L1 and the line L2. Therefore, even when the state (weight) of the liquid immersion area AR 2' in the measurement station STA and the state (weight) of the liquid immersion area AR2 in the exposure station STE are different from each other, the control device CONT can make the image plane formed by the projection optical system PL and the liquid LQ coincide with the surface of the substrate P.

In the present embodiment, the liquid immersion area AR2 of the liquid LQ is formed (locally) on a part of the substrate P. Even at the position where the liquid immersion area AR2 is formed on the substrate P, the surface shape of the substrate P varies from substrate to substrate. In summary, in the schematic diagram of fig. 6(a), when the liquid immersion area AR2 is formed on one X side of the substrate P (or the substrate stage PST) as indicated by the symbol AR2a, for example, significant deformation may occur in an area on one X side of the substrate P as indicated by the line La of fig. 6 (b). The line La indicates the surface shape (deformation amount) of the substrate P in a pattern. When the liquid immersion area AR2 is formed at the positions indicated by the symbols AR2b and AR2c in fig. 6(a), the position of the substrate P corresponding to the position of the liquid immersion area AR2 may be significantly deformed as indicated by the lines Lb and Lc in fig. 6 (b).

Therefore, as the substrate P (or the substrate stage PST) moves, the position of the liquid immersion area of the liquid LQ moves as indicated by the symbols AR2a, AR2b, and AR2c, and the surface shape (deformation amount) of the substrate P or the substrate stage PST may change depending on the position of the liquid immersion area in the surface direction of the substrate P. At this time, due to the configuration used when the Z position of a small area on the substrate P is measured by the liquid LQ in the liquid immersion area AR2(AR 2'), it is difficult for the focus level detection system 70 to measure the wide area (global) distortion (wide surface shape) of the entire substrate P. Therefore, the control apparatus CONT can determine the global deformation (surface shape) of the entire substrate P based on the measurement results of the load sensors 64A to 64C provided at a plurality of positions. Since the load sensors 64A to 64C are provided at a plurality of positions (3 positions), the respective weights at the plurality of positions (3 positions) of the substrate P in the state where the liquid LQ is completely disposed can be measured. As the position of the liquid immersion area moves, the respective outputs of the plurality of load sensors 64A to 64C change. The control device CONT performs predetermined arithmetic processing based on the information on the approximate plane obtained by using the focus level detection system 70 and the measurement results of the load sensors 64A to 64C to obtain the amount of deformation of the substrate P including the substrate holder PH, and further obtain the wide-area (global) deformation (surface shape) of the entire substrate P. Here, when determining the wide surface shape of the substrate P based on the measurement result of the load sensor 64, for example, the substrate support PH, the rigidity of the substrate P, and the like may be considered.

In the present embodiment, the load sensors 64A to 64C are provided between the lower surface of the substrate support PH and the bottom surface 62 of the Z-tilt table 52, but the position of the load sensors (measurement devices) is not limited to this. For example, in a liquid immersion exposure method, a member such as a glass plate which transmits an exposure light beam may be disposed between the optical element 2 and the substrate P (substrate support PH), the liquid LQ may be supplied between the glass plate and the substrate P to form a liquid immersion area AR2, and a measuring device such as a load cell may be disposed on the glass plate side. Then, the force applied to the substrate P is measured by using the measuring device (load cell). In this case, even in the measurement station STA, a member equivalent to the glass plate of the exposure station STE can be disposed between the substrate alignment system (the 1 st mark detection system) and the substrate P (the substrate support PH), and a measurement device such as a load sensor can be further disposed. Then, in a state where a predetermined liquid is supplied between the equivalent member (glass plate) and the substrate P to form a liquid immersion area AR2, the force applied to the substrate P is obtained using the measuring device (load cell). In the present embodiment, even in the measurement process before the exposure process in the liquid immersion state, the measurement process can be performed under almost the same conditions as in the exposure process in the configuration in which the liquid immersion state is set. However, when the temperature change of the substrate P is considered by the presence or absence of the liquid on the substrate P, the substrate P and the substrate holder PH for holding the substrate P may be deformed. Therefore, the measurement process or the exposure process may be performed after the substrate P or the substrate support PH becomes thermally stable after a predetermined time from the formation of the immersion areas AR2 and AR 2' at the time of the measurement process or the exposure process.

The measurement target in the measurement station STA is not limited to that in the present embodiment. The information which is not directly related to the position of the reference member 300 or the substrate P arranged on the substrate stage PST may be stored in the substrate stage PST or may be measured by a sensor or the like detachably attached thereto. For example, information relating to the temperature, the degree of contamination, or the like of the liquid LQ may be measured.

As described above, the liquid LQ in the present embodiment is composed of pure water. Pure water is easily available in large quantities in a semiconductor manufacturing plant, and has the advantage of not adversely affecting the resist on the substrate P, the optical elements (lenses), and the like. Further, pure water is expected to have an action of cleaning the surface of the substrate P and the surface of the optical element provided on the front end surface of the projection optical system PL because pure water has no adverse effect on the environment and the content of impurities is extremely low. Further, when the purity of pure water supplied from a factory or the like is low, the exposure apparatus may be provided with an ultrapure water production device.

Then, the refractive index n of pure water (water) with respect to the exposure light beam EL having a wavelength of 193nm is about 1.44, and when ArF excimer laser light (having a wavelength of 193nm) is used as the light source of the exposure light beam EL, a high resolution is obtained in which the wavelength is shortened to 1/n (about 134nm) on the substrate P. Further, since the depth of focus is enlarged by about n times (i.e., about 1.44 times) as compared with the depth of focus in air, if the depth of focus can be secured to the same extent as that in air, the number of apertures of the projection optical system PL can be increased, and the resolution can be increased even at this point.

When the liquid immersion method is used as described above, the number of apertures NA of the projection optical system is 0.9 to 1.3. Thus, when the aperture number NA of the projection optical system becomes large, the imaging performance of the scattered (random) polarized light beam used as the exposure light beam is also deteriorated by the polarization effect, and it is desirable to use a polarized illumination. At this time, linear polarized illumination is performed in which one of the line (Lines) and space pattern (space pattern) of the mask (reticle) coincides with the longitudinal direction of the line pattern, and the diffraction light emission amount of the component in the S-polarized light (TE-polarized light component), that is, the component in the polarized light direction in the longitudinal direction of the line pattern can be increased by the pattern of the mask (reticle). When the space between the projection optical system PL and the resist applied on the surface of the substrate P is filled with the liquid, since the transmittance on the resist surface of the diffracted light contributing to the S-polarized light component (TE-polarized light component) having the upward contrast becomes high as compared with the case when the space between the projection optical system PL and the resist applied on the surface of the substrate P is filled with the air (gas), high image forming performance can be obtained even when the number NA of openings of the projection optical system exceeds 1.0. Further, it is more effective to appropriately combine the phase shift mask with an oblique incidence illumination method (particularly, a dipole (dipole) illumination method) conforming to the longitudinal direction of the line pattern disclosed in japanese unexamined patent application publication No. h 6-188169. The same disclosures as in the above publications can be used as part of the present specification, within the limits permitted by the national laws of the country specified in the international application (or of the selected specified country).

Further, when a substrate P is exposed with a fine line-and-space pattern (e.g., line-and-space of about 25 to 50 nm) by using an ArF excimer laser beam as an exposure beam and using a projection optical system PL of a reduction magnification of 1/4, the mask M functions as a polarizing plate by the waveguide (Wave guide) effect due to the structure of the mask M (e.g., the fineness of the pattern or the thickness of chromium), and when compared with the diffracted light of a P polarized component (TM polarized component) having a low contrast, more diffracted light of an S polarized component (TE polarized component) is emitted from the mask M. In this case, although the above-described linearly polarized illumination is preferably used, the mask M may be illuminated with a scattered polarized light beam, and high resolution performance can be obtained even when the number NA of apertures of the projection optical system PL is 0.9 to 1.3. Further, when the ultrafine line-and-space pattern on the mask M is exposed on the substrate P, the P polarization component (TM polarization component) can be made larger than the S polarization component (TE polarization component) by the line grating (Wire Grid) effect, however, when the line-and-space pattern larger than 25nm is exposed on the substrate P by using ArF excimer laser light as the exposure light beam and using the projection optical system PL with a reduction magnification of 1/4, for example, the diffracted light of the S polarization component (TE polarization component) can be emitted from the mask M more than the diffracted light of the P polarization component (TM polarization component), and high resolution performance can be obtained even when the aperture number NA of the projection optical system PL is 0.9 to 1.3.

Further, not only the linearly polarized illumination (S-polarized illumination) in which the line pattern of the mask (reticle) coincides with the longitudinal direction but also a combination of the polarized illumination method for linearly polarized light in the direction of the line (periphery) of the circle centered on the optical axis and the oblique incidence illumination method can be obtained as disclosed in japanese unexamined patent application, first publication No. 6-53120. In particular, when not only a line pattern in which the pattern of the mask (reticle) extends in a predetermined direction but also a plurality of line patterns extending in different directions are mixed, as disclosed in japanese unexamined patent application, first publication No. 6-53120, a high imaging performance can be obtained even when the number NA of apertures of the projection optical system PL is increased by using a combination of a polarized light illumination method for linearly polarizing light in the line direction of a circle centered on the optical axis and a wheel band illumination method. The same disclosures as in the above publications can be used as part of the present specification, within the limits permitted by the national laws of the country specified in the international application (or of the selected specified country).

In the present embodiment, the optical element 2 is attached to the tip of the projection optical system PL. Adjustment of optical characteristics of the projection optical system PL, for example, aberration (spherical aberration, coma) and the like, can be performed by a lens. Further, the optical plate for adjusting the optical characteristics of the projection optical system PL may be used as an optical element attached to the tip of the projection optical system PL. Or a parallel plane plate which is transparent to the exposure beam EL may also be used.

Further, when the pressure between the substrate P and the optical element located at the tip of the projection optical system PL generated by the flow of the liquid LQ becomes large, since the optical element cannot be replaced, the optical element can be firmly fixed by the pressure.

In the present embodiment, the space between the projection optical system PL and the surface of the substrate P is filled with the liquid LQ, but for example, the space may be filled with the liquid LQ in a state where a cover glass (cover) composed of a parallel flat plate is attached to the surface of the substrate P.

Further, although the liquid LQ of the present embodiment is water, a liquid other than water may be used, and for example, when the light source of the exposure light beam EL is F2 laser, since the F2 laser beam is not permeable to water, a fluorinated fluid such as perfluorated polyether (PFPE) or fluorinated oil which is permeable to the F2 laser beam may be used as the liquid LQ. At this time, a portion in contact with the liquid LQ is formed into a thin film of a polar small molecule structure containing fluorine, for example, and lyophilic treatment is performed. Other cedar (cedar) oils having a high refractive index and high transparency only to the exposure light beam EL and having stability against a resist applied to the surface of the projection optical system PL or the substrate P may be used as the liquid LQ. In this case the surface treatment may be performed corresponding to the polarity of the liquid LQ used.

Further, not only a semiconductor wafer for manufacturing a semiconductor device but also a glass substrate for a display device, a ceramic wafer for a thin film magnetic head, a mask for an exposure apparatus, a reticle original plate (synthetic quartz, silicon wafer), or the like can be used as the substrate P in each of the above embodiments.

In addition to a scanning type exposure apparatus (scanning stepper) of a step-and-scan (step-and-scan) system for synchronously moving the mask M and the substrate P to perform scanning exposure on the pattern of the mask M, as the exposure apparatus EX, a projection exposure apparatus (stepper) of a step-and-repeat (step-and-repeat) system for exposing the pattern of the mask M together with the substrate P in a stationary state and sequentially moving the substrate P in a stepwise manner may be used. Also, an exposure apparatus of a step-and-stitch (step-and-stitch) system, which repeatedly transfers a portion of at least 2 patterns on the substrate P, may also be used in the present invention.

Further, an exposure apparatus of a system in which when the 1 st pattern and the substrate P are almost at rest, a reduced image of the 1 st pattern is exposed together on the substrate P by using a projection optical system (for example, a refraction type projection optical system not including a reflection element when the magnification is 1/8 reduced) is also applicable to the present invention. At this time, the overall exposure apparatus of the stitch type is also applicable to the present invention when the pattern 2 and the substrate P are almost in a stationary state, and then a part of the reduced image of the pattern 2 is overlapped with the pattern 1 by using the projection optical system to expose them together on the substrate P.

In the above-described embodiment, although an exposure apparatus in which a liquid is partially filled between the projection optical system PL and the substrate P is used, a liquid immersion exposure apparatus in which a stage (stage) holding a substrate to be exposed is moved to a liquid tank or a liquid tank having a predetermined depth is formed on the stage and the substrate is held in the tank is also applicable to the present invention. The structure and exposure operation of an immersion exposure apparatus for moving a stage (stage) holding a substrate to be exposed to a liquid bath are disclosed in, for example, japanese unexamined patent application publication No. 6-124873. An immersion exposure apparatus in which a liquid tank having a predetermined depth is formed on a stage and a substrate is held in the tank is disclosed in, for example, Japanese unexamined patent application publication No. Hei 10-303114 or U.S. Pat. No. 5,825,043. The disclosures of the above publications or U.S. patents may be used as part of this specification, within the limits permitted by the national laws of the country specified in the international application (or of the selected country of choice).

The exposure apparatus to which the liquid immersion method is applied is configured such that the liquid (pure water) is filled in the optical path space on the emission side of the final optical member of the projection optical system PL to expose the wafer W (substrate P), but the liquid (pure water) may be filled in the optical path space on the incident side of the final optical member of the projection optical system as disclosed in PCT international publication No. WO 2004/019128. The disclosure in the above mentioned booklets may be used as part of this specification, within the limits permitted by the national laws of the country specified in this international application (or of the chosen selected country).

When the liquid immersion exposure apparatus described above is applied, it is also possible to set the same state as that of the wafer in the exposure station in the exposure state on the measurement station side in accordance with the respective configurations.

The type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor device when a semiconductor device pattern is exposed on a substrate P. The present invention can be widely applied to exposure apparatuses for manufacturing liquid crystal display devices or displays, thin film magnetic heads, exposure apparatuses for manufacturing image Sensors (CCDs), reticles, masks, and the like.

When a linear motor is used in the substrate stage PST or the mask stage MST (see, for example, U.S. Pat. No. 5,623,853 or U.S. Pat. No. 5,528,118), either of an air-over type using an air bearing and a magnetic air-over type using a lorentz (Lawrance) force or an electric resistance force can be applied to the present invention. Further, each of the PST and the MST may be of a type moving along a guide, and a non-guide type without a guide may be applied.

The driving mechanism of each of the PST and MST may be a planar motor for driving each of the PST and MST, which is driven by electromagnetic force when a magnet unit having magnets arranged in two dimensions and a motor unit having coils arranged in two dimensions are opposed to each other. In this case, it is also possible that either one of the magnet unit and the motor subunit is connected to each of the PSTs and MSTs, and the other one of the magnet unit and the motor subunit is provided on the side of the moving surface of each of the PSTs and MSTs.

The reaction force generated by the movement of the substrate stage PST may be mechanically transmitted to the ground using a frame member instead of the projection optical system PL, as described in japanese unexamined patent application, first publication No. 8-166475 and its corresponding U.S. Pat. No. 5,528,118.

The reaction force generated by the movement of the mask (reticle) stage MST can also be transmitted to the ground mechanically using a frame member instead of to the projection optical system PL, as described in japanese unexamined patent application, publication No. 8-330224 and its corresponding U.S. Pat. No. 5,874,820. The above publications or those disclosed in U.S. patents may be used as part of the description of the present specification, subject to the restrictions permitted by the national laws of the country (or selected country) specified in the international application.

In the above embodiment, a light-transmitting mask having a predetermined light-shielding pattern (or phase pattern, or dimming pattern) formed on a light-transmitting substrate or a light-reflecting mask having a predetermined reflection pattern formed on a light-reflecting substrate is used, but the present invention is not limited to these masks. For example, an electronic mask (a type of optical system) used in the formation of a transmission pattern or a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed may be used instead of the above mask. The above-mentioned electronic photomask is disclosed in, for example, U.S. Pat. No. 6,778,257. The disclosure of the above-mentioned U.S. patents may be used as part of the description of the present specification, subject to the restrictions permitted by the national laws of the country specified in the international application (or selected country). The electronic mask conceptually includes both a non-light-emitting image display element and a self-light-emitting image display element.

The present invention can also be applied to an exposure apparatus in which 2-beam interference exposure is used, and interference fringes generated by interference of a plurality of beams are exposed on a substrate. Such an exposure method and exposure apparatus are disclosed, for example, in PCT International publication No. WO01/35168 booklet. The disclosure in the above-mentioned booklet may be used as part of the description of the present specification, within the limits permitted by the national laws of the country specified in the international application (or the selected country).

As described above, the exposure apparatus EX of the present embodiment manufactures the sub-system including each component element recited in the claims in combination to maintain predetermined mechanical accuracy, electrical accuracy and optical accuracy. In order to ensure these accuracies, adjustments necessary for achieving optical accuracy in various optical systems, adjustments necessary for achieving mechanical accuracy in various mechanical systems, and adjustments necessary for achieving electrical accuracy in various electrical systems are required before and after the combination. The process of assembling the various subsystems into the exposure apparatus includes the connection of the various subsystems to each other, the mechanical connection, the wiring connection of the circuit, and the piping connection of the pneumatic circuit. The respective combination processes of the subsystems can also be performed from the subsystem to the exposure apparatus before the combination process. If the process of combining various subsystems into the exposure device is finished, the total adjustment is performed to ensure various accuracies of the whole exposure device. Further, the exposure apparatus is preferably manufactured in a clean room in which temperature, cleanliness, and the like are controlled.

As shown in fig. 7, the method of manufacturing a micro-component such as a semiconductor component includes the steps of: a step 201 for designing performance by performing the function of the micro-device; a step 202 of manufacturing a mask (reticle) based on the design step; a step 203 of manufacturing a substrate on which a base material of the element is provided; a substrate processing step 204 for exposing the pattern of the mask on the substrate by the exposure apparatus EX of the above embodiment; a component assembling step 205 (including a dicing process, a bonding process, and a packaging process); checking step 206, etc.

Although the present invention has been described with reference to particular embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (100)

1. A liquid immersion exposure apparatus that includes an exposure station and a measurement station and exposes a substrate at the exposure station via a liquid, characterized by further comprising:

a plurality of movable members each holding a substrate and movable between the exposure station and the measurement station;

an optical member provided at the exposure station, the optical member irradiating an exposure beam to the substrate held at the exposure station by a first one of the movable members; and

a measurement device located at the measurement station, the measurement device measuring the second movable member or the substrate held by the second movable member in a state where the liquid is partially disposed on the second movable member of the movable members or on the substrate held by the second movable member at the measurement station.

2. The liquid immersion exposure apparatus according to claim 1, characterized in that the measurement at a measurement station is performed during the exposure at the exposure station.

3. The immersion exposure apparatus according to claim 1 or 2, wherein the measurement station includes a surface detection system that measures surface information of the substrate held by the second movable member via a liquid.

4. The liquid immersion exposure apparatus according to claim 1 or 2, further comprising a contact member located at the measurement station, the contact member having a liquid contact surface approximately equal to a liquid contact surface of the optical member,

wherein a first liquid immersion area is formed between the optical member and the substrate at the exposure station, and a second liquid immersion area is formed between the contact member and the substrate at the measurement station.

5. The immersion exposure apparatus according to claim 1 or 2, wherein the measuring device measures a force applied to the second movable member or the substrate held by the second movable member by the liquid.

6. The immersion exposure apparatus according to claim 5, wherein the surface position of the substrate at the exposure station is corrected with reference to a measurement result of the measuring instrument.

7. The immersion exposure apparatus according to claim 5, wherein the measuring device measures the force applied to the substrate at each of a plurality of positions in a state where the liquid is set on the second movable member or the substrate held by the second movable member.

8. The immersion exposure apparatus according to claim 1 or 2, wherein the meter includes:

a1 st measuring device located at the measuring station, for measuring the substrate located at the measuring station, in the state that the liquid is arranged on the substrate, and measuring the first surface information related to the substrate; and

a2 nd measuring device located at the exposure station, for measuring second surface information related to the substrate in a state that the liquid is set on the substrate, with respect to the substrate located at the exposure station; and is

The liquid immersion exposure apparatus determines a correction amount for correcting the second surface information of the substrate at the exposure station based on the first surface information and the second surface information.

9. The liquid immersion exposure apparatus according to claim 1 or 2, wherein the surface information of the substrate is measured based on a position of a liquid immersion area in a surface direction of the substrate.

10. The liquid immersion exposure apparatus according to claim 1, wherein the measurement station includes a first mark detection system that measures an alignment mark on the substrate held by the second movable member via a liquid and also measures a reference mark provided on the second movable member via a liquid.

11. The liquid immersion exposure apparatus according to claim 10, wherein the first mark detection system includes a second optical member having a liquid contact surface approximately equal to a liquid contact surface of the optical member; and is

The measurement is performed in a state where the liquid is in contact with the liquid contact surface of the second optical member.

12. The liquid immersion exposure apparatus according to claim 10 or 11, wherein the measurement station includes a surface detection system that measures surface information of the substrate held by the second movable member via a liquid, and that measures the surface information

The first mark detection system and the surface detection system can perform measurement at approximately the same time.

13. The liquid immersion exposure apparatus according to claim 10 or 11, wherein the exposure station includes a second mark detection system that measures a reference mark provided on the second movable member via a liquid.

14. The liquid immersion exposure apparatus according to claim 1 or 2, wherein a portion of each of the plurality of movable members, which is in contact with the liquid, is subjected to liquid repellent treatment.

15. The liquid immersion exposure apparatus according to claim 14, wherein the liquid-repellent treatment includes forming a liquid-repellent material at the portion.

16. The liquid immersion exposure apparatus according to claim 1 or 2, wherein each of the plurality of movable members has a face approximately flush with a face of the substrate around a peripheral edge of the substrate held by the movable member.

17. The liquid immersion exposure apparatus according to claim 1 or 2, wherein the measurement is performed via the liquid.

18. The liquid immersion exposure apparatus according to claim 17, wherein a measurement beam is irradiated to the liquid when the measurement is performed.

19. The liquid immersion exposure apparatus according to claim 17, wherein the measurement is performed via a liquid immersion area formed between the substrate and a contact member located at the measurement station, the contact member having a liquid contact surface approximately equivalent to a liquid contact surface of the optical member.

20. The liquid immersion exposure apparatus according to claim 1 or 2, wherein

The substrate on the first movable member, which has been measured at the measuring station, is exposed at the exposure station.

21. The immersion exposure apparatus according to claim 3, wherein the surface information of the substrate at the exposure station is corrected based on a result of the surface information measured at the measurement station.

22. The immersion exposure apparatus according to claim 7, wherein the surface information of the substrate is obtained based on a measurement result of the measuring device at each of a plurality of positions.

23. The liquid immersion exposure apparatus according to claim 13, wherein an irradiation area on the substrate is aligned with a position of the pattern image passing through the optical member and the liquid with reference to measurement results of the first mark detection system and the second mark detection system.

24. The liquid immersion exposure apparatus according to claim 4, wherein the affinity of the liquid contact surface of the contact member is approximately the same as the affinity of the liquid contact surface of the optical member.

25. The liquid immersion exposure apparatus according to claim 1, further comprising:

a first liquid supply mechanism that forms a first liquid immersion area on the substrate held at the exposure station by the first movable member; and

a second liquid supply mechanism that partially forms a second liquid immersion area on the substrate held at the measurement station by a second one of the movable members.

26. The liquid immersion exposure apparatus according to claim 25, wherein a portion of each of the plurality of movable members, which is in contact with the liquid, is subjected to liquid repellent treatment.

27. The liquid immersion exposure apparatus according to claim 26, wherein the liquid-repellent treatment includes forming a liquid-repellent material at the portion.

28. The liquid immersion exposure apparatus according to any one of claims 25 to 27, wherein each of the plurality of movable members has a face approximately flush with a face of the substrate around a peripheral edge of the substrate held by the movable member.

29. The liquid immersion exposure apparatus according to any one of claims 25 to 27, wherein measurement by the measurement device is performed via the liquid.

30. The liquid immersion exposure apparatus according to claim 29, wherein a measurement beam is irradiated to the liquid when the measurement is performed.

31. The liquid immersion exposure apparatus according to claim 29, wherein the measurement is performed via a liquid immersion area formed between the substrate and a contact member located at the measurement station, the contact member having a liquid contact surface approximately equivalent to a liquid contact surface of the optical member.

32. The liquid immersion exposure apparatus according to any one of claims 25 to 27, wherein measurement by the measurement device at the measurement station is performed during exposure at the exposure station.

33. The liquid immersion exposure apparatus according to any one of claims 25 to 27, wherein the substrate on the first movable member measured at the measurement station is exposed at the exposure station.

34. The liquid immersion exposure apparatus according to any one of claims 25 to 27, wherein the measurement station includes a surface detection system that measures surface information of the substrate held by the second movable member via a liquid.

35. The immersion exposure apparatus according to claim 34, wherein surface information of the substrate at the exposure station is corrected based on a result of the surface information measured at the measurement station.

36. An immersion exposure apparatus according to any one of claims 25 through 27, further comprising a contact member located at the measuring station, the contact member having a liquid contact surface approximately equal to a liquid contact surface of the optical member,

wherein a first liquid immersion area is formed between the optical member and the substrate at the exposure station, and a second liquid immersion area is formed between the contact member and the substrate at the measurement station.

37. The liquid immersion exposure apparatus according to claim 36, wherein an affinity of the liquid contact surface of the contact member is approximately the same as an affinity of the liquid contact surface of the optical member.

38. The liquid immersion exposure apparatus according to any one of claims 25 to 27, wherein the liquid immersion exposure apparatus is characterized by

A measuring device for measuring a force applied to the second movable member or the substrate by the liquid at a measuring station.

39. The liquid immersion exposure apparatus according to claim 38, wherein a surface position of the substrate at the exposure station is corrected with reference to the measurement result of the measuring instrument.

40. The immersion exposure apparatus according to claim 38, wherein the measuring device measures the force exerted on the substrate at each of a plurality of positions in a state where the liquid is set on the second movable member or the substrate.

41. The immersion exposure apparatus according to claim 39, wherein the surface information of the substrate is obtained based on a measurement result of the measuring device at each of a plurality of positions.

42. An immersion exposure apparatus according to any one of claims 25 to 27, wherein the measuring device includes: :

a1 st measuring device located at the measuring station, for measuring the substrate located at the measuring station, in the state that the liquid is arranged on the substrate, and measuring the first surface information related to the substrate; and

a2 nd measuring device located at the exposure station, for measuring second surface information related to the substrate in a state that the liquid is set on the substrate, with respect to the substrate located at the exposure station; and is

The liquid immersion exposure apparatus determines a correction amount for correcting the second surface information of the substrate at the exposure station based on the first surface information and the second surface information.

43. The liquid immersion exposure apparatus according to any one of claims 25 to 27, wherein surface information of the substrate is measured based on a position of a liquid immersion area in a surface direction of the substrate.

44. The liquid immersion exposure apparatus according to any one of claims 25 to 27, wherein the measurement station includes a first mark detection system that measures an alignment mark on the substrate held by the second movable member via a liquid and also measures a reference mark provided on the second movable member via a liquid.

45. The apparatus according to claim 44, wherein the first mark detection system comprises a second optical member having a liquid contact surface approximately equal to a liquid contact surface of the optical member; and is

The measurement is performed in a state where the liquid is in contact with the liquid contact surface of the second optical member.

46. The immersion exposure apparatus according to claim 42, wherein the measurement station includes a surface detection system that measures surface information of the substrate held by the second movable member via a liquid, and the surface detection system measures the surface information of the substrate held by the second movable member via a liquid

The first mark detection system and the surface detection system can perform measurement at approximately the same time.

47. The liquid immersion exposure apparatus according to claim 44, wherein the exposure station includes a second mark detection system that measures the reference mark provided on the second movable member via the liquid.

48. The liquid immersion exposure apparatus according to claim 47, wherein an irradiation area on the substrate is aligned with a position of the pattern image passing through the optical member and the liquid with reference to measurement results of the first mark detection system and the second mark detection system.

49. A method for manufacturing a device, characterized in that it uses the exposure apparatus according to any one of claims 1 to 24.

50. An exposure method using a liquid immersion exposure apparatus that includes an exposure station and a measurement station and exposes a substrate via liquid at the exposure station, characterized by comprising:

holding a substrate by a plurality of movable members, respectively, wherein each of the movable members is movable between the exposure station and the measurement station;

irradiating an exposure beam to the substrate held at the exposure station by a first movable member of the movable members; and

measuring the second movable member or the substrate in a state where a liquid is partially provided on a second movable member of the movable members or on the substrate held at the measuring station by the second movable member.

51. The method of claim 50, wherein said measuring said second movable member or said substrate comprises measuring surface information of said substrate via a liquid.

52. A method as claimed in claim 50 or 51, further comprising:

providing a contact member at said metering station, said contact member having a liquid contact surface about equal to a liquid contact surface of an optical member that irradiates said exposure beam;

forming a first liquid immersion area between the optical member and the substrate at the exposure station; and

a second immersion area is formed between the contact member and the substrate at the metering station.

53. A method according to claim 50 or 51, wherein said measuring at said measuring station is performed during said exposing at said exposure station.

54. A method as claimed in claim 50 or 51, further comprising:

a liquid-repellent treatment is performed on a portion of each of the plurality of movable members that contacts the liquid.

55. The method of claim 54 wherein said liquid-repellent treatment comprises forming a liquid-repellent material at said portion.

56. A method according to claim 50 or 51, wherein each of the plurality of movable members has a face about flush with a face of the substrate around a periphery of the substrate held by the movable member.

57. The method of claim 50 or 51, wherein said measuring is performed via said liquid.

58. The method of claim 57, wherein measuring the second movable member or the substrate is performed by: irradiating the liquid with a measuring beam.

59. The method of claim 57 wherein said measuring is performed via a liquid immersion area formed between said substrate and a contact member located at a measuring station having a liquid contact surface approximately commensurate with said liquid contact surface of said optical member.

60. A method according to claim 50 or 51, characterized in that the substrate on the first movable member measured at the measuring station is exposed at the exposure station.

61. The method of claim 51, further comprising:

and correcting the surface information of the substrate at the exposure station based on the result of the surface information measured at the measuring station.

62. The method according to claim 50 or 51, wherein the measuring of the second movable member or the substrate is performed by: measuring a force exerted by the liquid on the second movable member or the substrate.

63. The method of claim 62, further comprising:

and correcting the surface position of the substrate at the exposure station based on the measurement result of the measured force.

64. The method of claim 62, wherein measuring the second movable member or the substrate is performed by: measuring a force exerted on the substrate at each of a plurality of positions in a state where the liquid is disposed on the second movable member or on the substrate.

65. The method of claim 62, wherein measuring the second movable member or the substrate is performed by: measure first side information related to the substrate in a state where the liquid is set on the substrate at the measurement station, and further comprising:

measuring second side information related to the substrate in a state where the liquid is set on the substrate at the exposure station; and

determining a correction amount for correcting the second side information of the substrate at the exposure station based on the first side information and the second side information.

66. The method according to claim 50 or 51, wherein the measuring of the second movable member or the substrate is performed by: the surface information of the substrate is measured based on the position of the liquid immersion area in the surface direction of the substrate.

67. The method of claim 50 or 51, wherein measuring the second movable member or the substrate comprises:

alignment marks on the substrate held by the second movable member via a liquid are measured at the measurement stations, respectively, and reference marks provided on the second movable member are also measured via a liquid.

68. The method of claim 67, further comprising:

providing a surface at the metering station that is approximately equal to a liquid contact surface of an optical member that irradiates the exposure beam; and wherein the measurement at the measurement station is performed in a state where the liquid is brought into contact with the surface.

69. The method of claim 67, wherein measuring the second movable member or the substrate is performed by: measuring surface information of the substrate held at the measuring station by the second movable member via a liquid at about the same time as measuring the alignment mark and measuring the reference mark.

70. The method of claim 67, wherein measuring the second movable member or the substrate is performed by: the fiducial mark provided on the second movable member is measured at the exposure station via a liquid.

71. The method of claim 67, further comprising:

aligning an irradiation region on the substrate with a position of a pattern image of the exposure beam passing through the liquid according to the following measurement results:

a measurement result of measuring the alignment mark via a liquid at the measurement station; and

a measurement result of measuring the reference mark via a liquid at the measurement station; and

a measurement result of measuring the fiducial mark provided on the second movable member via a liquid at the exposure station.

72. The method of claim 63, further comprising:

surface information is obtained based on the measurement result of the measuring device at each of the plurality of positions.

73. The method of claim 52, wherein the affinity of the liquid contacting surface of the contact member is about the same as the affinity of the liquid contacting surface of the optical member.

74. The exposure method according to claim 50, further comprising:

forming a first liquid immersion area on a first movable member of the movable members at the exposure station by a first liquid supply mechanism;

and

a second liquid immersion area is formed on a second movable member among the movable members at the measurement station by a second liquid supply mechanism.

75. The method of claim 74, further comprising:

a liquid-repellent treatment is performed on a portion of each of the plurality of movable members that contacts the liquid.

76. The method of claim 75 wherein said liquid-repellent treatment comprises forming a liquid-repellent material at said portion.

77. The method of any one of claims 74-76 wherein each of the plurality of movable members has a face about flush with a face of the substrate around a periphery of the substrate held by the movable member.

78. The method of any one of claims 74-76, wherein the measuring by the measuring device is performed via the liquid.

79. The method of claim 78, wherein measuring the second movable member or the substrate is performed by: irradiating the liquid with a measuring beam.

80. The method of claim 78, wherein said measuring is performed via a liquid immersion area formed between said substrate and a contact member located at said measuring station, wherein said contact member has a liquid contact surface approximately comparable to a liquid contact surface of said optical member.

81. A method according to any of claims 74-76, characterized in that the measurement of the measuring device at the measuring station is performed during the exposure at the exposure station.

82. A method according to any of claims 74-76, wherein the substrate on the first movable member measured at the measuring station is exposed at the exposure station.

83. The method according to any of claims 74-76, wherein the measuring of the second movable member or the substrate held by the second movable member is performed by: the surface information of the substrate is measured through the liquid.

84. The method of claim 83, further comprising:

and correcting the surface information of the substrate at the exposure station based on the result of the surface information measured at the measuring station.

85. A method according to any one of claims 74-76, characterised in that it further comprises:

providing a contact member at the metering station, the contact member having a liquid contact surface about equal to a liquid contact surface of an optical member that irradiates the exposure beam; wherein

Forming the first liquid immersion area between the optical member and the substrate at the exposure station; and is

Forming the second liquid immersion area between the contact member and the substrate at the metering station.

86. The method of claim 85 wherein the liquid contacting surface of the contact member has an affinity that is about the same as the affinity of the liquid contacting surface of the optical member.

87. The method according to any of claims 74-76, wherein the measuring of the second movable member or the substrate held by the second movable member is performed by: measuring a force exerted by the liquid on the second movable member or the substrate.

88. The method of claim 87, further comprising:

and correcting the surface position of the substrate at the exposure station based on the measurement result of the measured force.

89. The method of claim 88, further comprising:

the face information is obtained based on the measurement result at each of the face positions.

90. The method of claim 87, wherein measuring the second movable member or the substrate is performed by: the force exerted on the substrate is measured at each of a plurality of positions in a state where the liquid is disposed on the second movable member or on the substrate.

91. The method of claim 87 wherein said measuring the second movable member or the substrate includes measuring first side information about the substrate in a state where the liquid is disposed on the substrate at the measuring station, and further comprising:

measuring second side information related to the substrate in a state where the liquid is set on the substrate at the exposure station; and

determining a correction amount for correcting the second side information of the substrate at the exposure station based on the first side information and the second side information.

92. The method of any of claims 74-76, wherein said measuring said second movable member or said substrate held by said second movable member is performed by: the surface information of the substrate is measured based on the position of the liquid immersion area in the surface direction of the substrate.

93. The method according to any of claims 74-76, wherein the measuring of the second movable member or the substrate held by the second movable member is performed by:

alignment marks on the substrate held by the second movable member via a liquid are measured at the measurement stations, respectively, and reference marks provided on the second movable member are also measured via a liquid.

94. The method of claim 93, further comprising:

aligning an irradiation region on the substrate with a position of a pattern image of the exposure beam passing through the liquid according to the following measurement results:

a measurement result of measuring the alignment mark via a liquid at the measurement station; and

a measurement result of measuring the reference mark via a liquid at the measurement station; and

a measurement result of measuring the fiducial mark provided on the first movable member via a liquid at the exposure station. .

95. The method of claim 93, further comprising:

providing a surface at the metering station that is approximately equal to a liquid contact surface of an optical member that irradiates the exposure beam; and wherein the measurement at the measurement station is performed in a state where the liquid is brought into contact with the surface.

96. The method of claim 93, wherein measuring the second movable member or the substrate held by the second movable member is performed by: measuring surface information of the substrate held at the measuring station by the second movable member via a liquid at about the same time as measuring the alignment mark and measuring the reference mark.

97. The method of claim 93, wherein said measuring said second movable member or said substrate held by said second movable member is performed by: the second movable member is moved from a measurement station to an exposure station where the fiducial mark provided on the second movable member is measured via a liquid.

98. A method for manufacturing a device, characterized in that it uses the exposure method according to any one of claims 26 to 49.

99. A method for manufacturing a device, characterized in that it uses the exposure apparatus according to any one of claims 51 to 74.

100. A method for manufacturing a device, characterized in that it uses the exposure method according to any one of claims 76 to 99.