HK1196030B - Ultra-wideband assembly system and method - Google Patents

Description

Ultra-wideband assembly system and method

This application claims priority from and is a continuation-in-part of U.S. patent application No. 12/080,646 entitled "ultra-wideband assembly system and method" filed 4/2008, the disclosure of which is incorporated herein by reference in its entirety, to Mruz.

Technical Field

Some embodiments of the invention generally relate to circuits. In particular, the present invention relates to ultra-wideband assembly systems and methods providing a wide range of operating frequencies with low insertion loss. In some embodiments, the present invention relates to coil carriers for use in ultra-wideband assembly systems and methods.

Background

With the development of multimedia technology, there is an increasing need to construct optical communication networks that can provide transmission at high speed and accommodate large amounts of information. There is also a need to provide transmission over long distances with reduced costs. Various conventional systems have been or are being developed that can provide high transmission rates between 10Gb/s and over 40 Gb/s.

To accommodate such high transmission speeds, circuits have been developed with bias-supply (bias-tee) (also known as "bias-T") components disposed on the transmitter-receiver. The conventional bias supply circuit is actually in the form of a multiplexer having three ports arranged in a "T" shape and having a frequency ranging from below 30KHz to at least 40GHz, horizontally across the T-element, combined with much lower frequencies including DC from the bottom path for biasing and/or regulating transistors, diodes and passive circuits. The circuit is simply formed by a capacitor and a coil, and its details are noted.

In conventional systems, the construction of the horizontal strips of T-elements is based on one or more of many forms of transmission lines with low-loss non-conductive material (including gases) acting as a dielectric. At one point, a small slice is cut from the transmission line conductor. Thereby, a capacitor is formed, and low frequencies are blocked. Such a capacitor has the advantage that it is almost invisible (invisible) for higher frequencies. In order to pass frequencies typically of several megahertz and lower, the capacitance must be increased. An ultra-wideband capacitor, such as the 545L type capacitor manufactured by american technical ceramics and disclosed in commonly owned U.S. patent No. 7,248,458 to Mruz, the disclosure of which is incorporated herein by reference in its entirety, can be configured to accomplish this task without adding significant interference to the insertion loss and return loss characteristics of the original through line.

A small coil made of thin wire with an air, dielectric, ferrite or powdered iron core connects the inner conductor of one of the sides of the capacitor with a port in the outer conductor leading to the T-element. Frequencies above about 16KHz hit the coil at the small end. Since the diameter of the coil increases as the winding progresses along the tapered length of the core, its resonance is distributed over the entire frequency range of the T-element, causing its inductive reactance characteristic to vary uniformly with frequency (vary). This results in a substantially resonance-free increase in the inductance of the coil, which in turn (in-turn) causes a linear decrease in the RF leakage from the transmission line as the frequency increases. Due to size constraints, single-layer tapered coils of this type cannot be made sufficiently inductive to prevent RF leakage at very low frequencies. Thus, conventional systems employ a second coil having a significantly greater inductance to place the second coil in series with the first tapered coil starting at the large end of the first tapered coil.

Any resonance that may arise from the larger coil and from the interaction between the two coils in series is suppressed by two resistors placed across the larger coil and in series with the two coils, respectively.

Conventional bias supply components are commonly used to bias photodiodes (vacuum and solid state), microchannel plate detectors, transistors and transistors. This prevents high frequency energy from leaking onto the common power rail and noise from the power supply from leaking onto the signal lines.

Conventional systems using bias power supply components suffer from high, erratic insertion loss (i.e., reduction in transmitted signal power) when operating over a wide range of operating frequencies. Therefore, there is a need for a system that can operate over a wide range of frequencies and has low and well-behaved insertion loss.

Disclosure of Invention

In some embodiments, the present invention relates to an ultra-wideband assembly in an electrical circuit having a circuit board with a conductive microstrip line. The ultra-wideband assembly includes a non-conductive tapered core having an outer surface, a distal end, and a proximal end. The distal end is larger than the proximal end. The ultra-wideband assembly includes a conductive wire having a proximal end and a distal end wound around at least a portion of a non-conductive tapered core. The proximal end of the conductive wire extends away from the proximal end of the non-conductive tapered core and is conductively coupled to a microstrip line of the circuit board. The distal end of the conductive wire extends away from the distal end of the non-conductive tapered core. The conductive wire is in contact with at least a portion of the outer surface of the non-conductive tapered core. The ultra-wideband assembly includes a support bracket coupled to a non-conductive tapered core. The bracket includes a base portion and a core attachment portion. The base portion is conductively coupled to the circuit board. The core connection portion is coupled to a distal end of the non-conductive tapered core and is also conductively coupled to a distal end of the conductive wire. When coupled to the non-conductive tapered core, the support bracket is configured to arrange the non-conductive tapered core at a predetermined angle to the circuit board.

In some embodiments, the following optional features may also be included. The predetermined angle may be in a range of 10 degrees or more to substantially 90 degrees with respect to the circuit board. The ultra-wideband assembly may also include a dielectric layer disposed on top of at least a portion of the conductive wire wound on the non-conductive tapered core, the dielectric layer being disposed substantially near the proximal end of the non-conductive tapered core. The ultra-wideband assembly may include a metal pad coupled to the dielectric layer at a proximal end of the non-conductive tapered core. The dielectric layer may be configured to extend away from the outer surface of the non-conductive tapered core. The dielectric layer may have a thickness ranging between about 0.004 inches to about 0.035 inches. The dielectric layer may be made of a low loss dielectric material having a low dielectric constant. The dielectric material may be a hydrocarbon ceramic-filled glass. The metal pad may have a thickness ranging between about 0.0005 inches to about 0.003 inches. The metal pad may include a copper layer, wherein the copper layer is configured to be initially electroless deposited on the dielectric layer and then electroplated onto the dielectric layer, and then the copper layer is configured to be plated with a metal selected from the group consisting of tin, a lead/tin combination, silver, and gold. The metal pad may be configured to contact the proximal end of the conductive wire to create a robust contact with the microstrip line of the circuit board. The support bracket and the distal end of the conductive wire may provide secure contact with the circuit board. The non-conductive tapered core may have a tetrahedral shape. The non-conductive tapered core may have a triangular pyramid shape. The non-conductive tapered core may also have a multi-dimensional polyhedral shape. The non-conductive tapered core may be comprised of iron powder. The components may be configured to reduce insertion loss in the frequency range from below 10KHz to over 100 GHz. The dielectric material may be fabricated from a material selected from the group consisting of: hydrocarbon ceramic filled glass, ceramic reinforced glass or PTFE based materials, PTFE materials reinforced with glass fibers, hydrocarbon ceramic composites and rigid plastics.

In some embodiments, the present invention relates to a method of manufacturing an ultra-wideband assembly for placement in an electrical circuit having a circuit board with a conductive microstrip line. The method includes providing a non-conductive tapered core having an outer surface, a distal end, and a proximal end. The distal end is larger than the proximal end. The method includes providing a conductive wire having a proximal end and a distal end and wound around at least a portion of the non-conductive tapered core. The proximal end of the conductive wire extends away from the proximal end of the non-conductive tapered core and is conductively coupled to a microstrip line of the circuit board. The distal end of the conductive wire extends away from the distal end of the non-conductive tapered core. The conductive wire is in contact with at least a portion of the outer surface of the non-conductive tapered core. The method also includes providing a support bracket for coupling to the non-conductive tapered core. The bracket has a base portion and a core attachment portion. The base portion is conductively coupled to the circuit board. The core connection portion is coupled to a distal end of the non-conductive tapered core and is also conductively coupled to a distal end of the conductive wire. When coupled to the non-conductive tapered core, the support bracket is configured to arrange the non-conductive tapered core at a predetermined angle to the circuit board.

Drawings

Further features and advantages of the invention, as well as the structure and operation of various embodiments of the invention, are disclosed in greater detail below with reference to the accompanying drawings.

The present invention is described with reference to the accompanying drawings. In the drawings, like reference numbers indicate identical or functionally similar elements. Furthermore, the left-most digit(s) of a reference number identifies the drawing in which the reference number first appears.

Fig. 1a-i illustrate exemplary non-conductive tapered cores according to some embodiments of the invention.

Figures 2a-b illustrate an exemplary non-conductive tapered core assembly with a metal bracket according to some embodiments of the present invention.

Fig. 3a illustrates an exemplary non-conductive tapered core with dielectric layers and metal pads according to some embodiments of the invention.

Fig. 3b-c illustrate another exemplary non-conductive tapered core with a metal bracket according to some embodiments of the invention.

Fig. 4a-b illustrate exemplary capacitor mounting devices according to some embodiments of the invention.

Fig. 5a-f illustrate exemplary bias power supply assemblies according to some embodiments of the invention.

FIG. 5g illustrates another exemplary non-conductive tapered core assembly with a metal bracket according to some embodiments of the invention.

Fig. 6 shows two graphs depicting insertion loss and return loss in which the bias power supply assembly of the present invention is used.

Fig. 7a-b illustrate exemplary coil carriers according to some embodiments of the invention.

Fig. 8a-b show graphs comparing the performance of a coil alone and a coil with a coil carrier.

FIG. 9 illustrates an exemplary "wrapping" of a metal pad around a dielectric layer of a non-conductive tapered core assembly, according to some embodiments of the invention.

Detailed Description

The present invention relates generally to electrical circuits, and more particularly to ultra-wideband assembly systems and methods that can increase the operating frequency of electrical circuits. In some embodiments, the present invention relates to pick-and-place coil carriers. In some embodiments, the present invention relates to a pick-and-place coil carrier with a dielectric tip (dielectric tip).

In some embodiments, the present invention relates to a non-conductive tapered core assembly for mounting a core in an electrical circuit to increase the operating frequency range. Fig. 1a-h illustrate an exemplary non-conductive tapered core 100 according to some embodiments of the invention. The core 100 has a pyramidal shape (i.e., a pyramid with a parallelogram base). In some embodiments, the core 100 may be square, rectangular, triangular, polyhedral, or any other type of pyramidal structure or other multi-dimensional structure. In some embodiments, the core 100 may be made from iron powder particles.

Fig. 1a illustrates an exemplary powder core 100 according to some embodiments of the invention. As shown, the core100 are configured in a pyramidal form. As will be appreciated by those skilled in the art, the form of the core 100 may vary, and the core may have a quadrangular pyramid shape (as shown in fig. 1 a), a triangular pyramid shape (as shown in fig. 1 g), or any other multi-dimensional polyhedral shape (as shown in fig. 1 h). One of the advantages of the pyramidal core shown in fig. 1a is that it is easier to form and wind than cores of other shapes. In addition, when the #47 copper wire was coated with a single layerThe cores shown in FIGS. 1a-f are configured to include a taper angle α, which may be defined as the angle formed by a plane intersecting the apex of the pyramid and perpendicular to the base of the pyramid (as shown in FIG. 1i, which shows a two-dimensional view of the tapered core 100). in some embodiments, the taper angle α may be in the range of from below 10 degrees to above 25 degrees. in alternative embodiments, the taper angle α may be in the range of 17-19 degrees in an alternative embodiment, and may vary in relation to the taper angle of a circuit board mounting angle in some embodiments, as shown in FIGS. 18. the taper angle may vary in relation to the taper angle of a circuit board mounting angle in accordance with the taper angle of a. in some embodiments, the taper angle may vary in accordance with the taper angle of a mounting angle of a circuit board mounting angle in some embodiments, and may vary in accordance with the taper angle of a circuit board mounting angle, as shown in FIGS.

The core 100 has an outer surface 102, a distal end 104, and a proximal end 106. Distal end 104 is configured to be larger than proximal end 106. The proximal end 106 is configured to mount adjacent to a transmission line on a circuit board, as will be discussed below.

The surface area of the apex of the pyramid shown in fig. 1a may be configured to have a tip with substantially zero surface area. This makes it possible to use wires wound all the way to the apex of the pyramid to form the tip. In some alternative embodiments, the surface area of the apex may be configured to be in the range of 0 to about 0.000025 square inches. In this particular example, the surface area of each lateral end face of the pyramid shown in FIG. 1a is configured to be approximately between 0.007951 square inches (for blunt vertices) and 0.00800 square inches (for sharp vertices). The surface area of the distal end (i.e., the parallelogram) is configured to be about 0.0041 square inches. As will be appreciated by those skilled in the art, the above values are provided for exemplary, non-limiting purposes, and other surface areas are possible.

Fig. 1b and 1c illustrate exemplary embodiments of a powder core 114 according to some embodiments, the core 114 having a dielectric 111 partially disposed on an outer surface of the core. Fig. 1b shows the dielectric 111 arranged adjacent to the proximal end of the powder core 114. The dielectric material 111 is configured to reduce the insertion loss of the coil at higher frequencies (i.e., frequencies generally above 300 MHz). Furthermore, the core material is separated from the RF end of the coil, which causes a reduction in the resulting insertion loss when it is placed near the transmission line. In some embodiments, the dielectric material 111 may be configured to help the soft iron form the shape of the powder core 114 and thus allow the formation of sharp vertices of pyramids. In addition, the dielectric material 111 may also be configured to act as a protective measure to prevent leakage of the core of the iron powder during the winding operation. In some embodiments, the dielectric material is Rogers TMM6 material available from Rogers, Inc. of Rogers, Connecticut. Other dielectric materials that may be used in place of portions of the powdered iron core include dielectric materials having a dielectric constant (defined as a measure of the degree to which the material concentrates electrostatic force flux lines under a given condition) of 8 or less.

Fig. 1b shows the dielectric 111 arranged over the entire proximal end region of the powder core 114. In some embodiments, the dielectric 111 may be disposed on the core 114 in a tapered manner and configured to replace a portion of the core 114 such that the core 114 appears smooth and without any protrusions, as shown in fig. 1c, which shows four orthogonal views of the same core. Such a tapered arrangement of the dielectric also allows for a gradual change in the length of the turns of the wiring. The length of the turns is configured to be such a gradual change to allow for a better distribution of the resonance of the coil winding. This may be advantageous for some applications compared to the core assembly shown in fig. 1b, where the dielectric is only applied to the top end of the core assembly and the coil winding undergoes a sharp change along its winding length, which may cause small resonance effects that will produce no significant change in the swept insertion loss response (swept insertion loss response). In the example using the tapered dielectric shown in FIG. 1c, these variations are not significant. However, the inductance of the coil assembly with a tapered dielectric shown in fig. 1c is smaller than the coil assembly with a dielectric arranged at the top end of the core as shown in fig. 1 b. As will be appreciated by those skilled in the art, the dielectric material may be disposed on the core, as shown in fig. 1b-c, according to any desired configuration of the system in which the coil assembly is used.

Fig. 1d-1f illustrate exemplary embodiments of a powder core 124 having electrically conductive wires 126 (forming windings 125) wound on an outer surface 128 of the core 124 according to some embodiments of the invention. The conductive wire 126 includes a proximal end 132 and a distal end 134. The proximal end 132 is configured to be disposed substantially adjacent to the proximal end 138 of the core 124. The distal end 134 is configured to be disposed substantially adjacent to the distal end 140 of the core 124. The proximal end 132 is configured as a transmission line connecting the conductive line 126 to circuitry (not shown in fig. 1 d). The proximal end 132 of the wire 126 is further configured to extend away from the proximal end 138 of the core 124. The distal end 134 may be configured to couple to an inductor (not shown in fig. 1d, but shown in fig. 5a-f below). The distal end 134 of the wire 126 is configured to extend away from the distal end 140 of the core 124.

The proximal end 132 of the conductive wire 126 is configured to extend away from the proximal end 138 of the core 124 in the range of 0 inches to about 0.010 inches (in some embodiments, the proximal end 132 may extend in the range of 0.001 inches to less than 0.006 inches). In some embodiments, the length of the proximal end 132 of the conductive wire 126 extending from the proximal end 138 of the core 124 is about 0.006 inches.

The conductive wire 126 is configured to have a diameter in the range of about 0.001 inches to about 0.013 inches. In some embodiments, the diameter of the wire may range from 0.005 inches to about 0.009 inches. In some embodiments, the diameter is equal to about 0.0007 inches. In some applications and embodiments, the diameter of the wire may be expanded outside the range of 0.001 to 0.013 inches. These applications relate to the required inductance value and current carrying capacity of the coil, which are interdependent with respect to wire diameter and wire length (since length is related to the number of turns). Such applications include amplifier front end and driver stage decoupling networks, varactor biased RF isolation inductors, and PIN switched DC driver networks. Other sizes of wire diameters are possible, as will be appreciated by those skilled in the art. The wire 126 is configured to be wound around the entire conductive core 124. In some embodiments, the wire 126 is configured to be wound around a portion of the conductive core 124. Such partial winding may be useful in applications such as those shown and discussed with respect to fig. 5 a. In these embodiments, the distal end of the core assembly is sometimes machined to an odd angle (odd angle) to make it compatible (mechanically or otherwise) with another coil assembly with which the first assembly is coupled.

As shown in fig. 1d-1f, the wire 126 is wound around the core 124 such that there is substantially no space between the turns of the wire 126, i.e., the wire 124 is tightly wound around the core 124. In some applications and/or as desired, the wire 126 may be wound around the core 124 at some predetermined intervals. This spacing may be constant along the length of the coil or may vary along the length of the coil.

In some embodiments using the tapered coil described above, wherein the ultra-wideband assembly is formed by the core and the windings discussed above, the tapered coil is configured to maintain signal levels (or minimize insertion loss, which is a reduction in transmitted signal power due to insertion of the device into a transmission line or fiber) in a frequency range below 70MHz to at least 40GHz when connected in a circuit. In some embodiments using a smaller tapered coil, the lower limit of frequency attenuation may be substantially shifted above 70MHz, with the hold-in range extending to at least 40 GHz. In some embodiments, the components of the present invention are configured to maintain a signal level (or minimize insertion loss) below 1.0 decibels over a frequency range of at least 16KHz to 40 GHz. Further, in some embodiments, the components of the present invention may be configured to maintain signal levels in a range from below 100KHz to over 100 GHz.

There are various methods of manufacturing the tapered core 124. In some embodiments, the tapered core may be pressed into the mold by conventional press equipment configured to press the iron core into the desired shape (or the shape shown in fig. 1 a-h). One of the problems involved in using mechanical stamping to make a tapered core is the fragility of the tapered core. Due to this feature, it is difficult to form the sharp tip of the core (as shown in fig. 1a-1 f), i.e. it will generally break.

In some embodiments, the material (i.e., iron powder) may be mixed with an epoxy resin into a thick, jelly-like paste and then poured into a mold that has been sprayed with a release agent. Mold release agents are substances used in molding and casting that help separate the mold from the material being molded and reduce imperfections in the molding surface. Examples of release agents that may be used in this case are the general non-fouling release polymers manufactured by Frekote and others. Waxes and silicon agents may also be used. Other types of release agents may be used, as will be appreciated by those skilled in the art. One of the problems involved in this method of making powder cores is that the epoxy resin suspended along with the iron powder particles makes the coring somewhat less efficient than a core without epoxy resin. Thus, the inductance produced by a core with epoxy is typically only 70% of what would be possible with a core without epoxy.

Another method of making the powder core is to take a stamped bar (or any other configuration) and sand (or grind) it into the structure shown in fig. 1 a-f. The molded rod may be modified into the structure of fig. 1a-f using any other suitable means or method. Thus, in some embodiments, a sanded core may be coated with a thin varnish to strengthen it. After the coating step, winding of the wire around the core may begin at the proximal end (or tip). In some embodiments, the winding may begin within three turns of the tip.

In some embodiments, the inductance values of the conical coil assembly shown in FIGS. 1a-H may range from 2 microHenries ("μ H") to over 20 μ H. In alternative embodiments, the inductance value may range from 5 μ H to 12 μ H. In still other alternative embodiments, the inductance value of the component may be 10 μ H.

As will be appreciated by those skilled in the art, the length and distal cross-sectional dimensions of the core may vary based on, for example, the number of turns of wire desired and any other parameters of the assembly. In some embodiments, the area of the proximal tip (proximate tip) is unchanged.

Fig. 2a illustrates an exemplary ultra-wideband assembly 200 that includes an electrically conductive tapered core 202 having a metal bracket 220, wherein the metal bracket 220 is configured to couple the core 202 to a circuit board 254, according to some embodiments of the invention. Core 202 includes a conductive wire winding 204, conductive wire winding 204 being configured to be wound about core 202 in a manner similar to the winding wound about core 101 shown in fig. 1 a-h. The conductive tapered core 202 includes an outer surface 206, a distal end 208, and a proximal end 210. Distal end 208 is configured to have a larger surface area than proximal end 210. The proximal end 210 is configured to be disposed substantially adjacent to the microstrip transmission line 252 of the circuit board 254. Conductive wire 204 includes a proximal end 212 and a distal end 214. The proximal end 212 is configured to be disposed substantially adjacent to the proximal end 210 of the core 202. The distal end 214 is configured to be disposed substantially adjacent to the distal end 208 of the core 202. The proximal end 212 of the wire 204 is configured to be connected to a transmission line 252 of a circuit board 254. The distal end 214 of the wire 204 is configured to be coupled to the support bracket 220.

One end or core connection portion 224 of the bracket 220 is configured to be coupled to the distal end 208 of the core 202, as shown in fig. 2 a. The other end or base portion 226 of the bracket 220 is configured to be coupled to the circuit board 254. Base portion 226 is also configured to be conductively coupled to circuit board 254.

The cradle 220 is configured to position the core 202 with the windings 204 at a particular angle β relative to the circuit board 254. In some embodiments, the angle between the central axis of the tapered core 202 and the horizontal top surface of the microstrip plate is in the range of 25 degrees or more to 90 degrees (i.e., the core 202 is mounted substantially vertically). In some embodiments, the angle ranges from 40 degrees to 70 degrees. In some embodiments, the angle β is 63 degrees from the microstrip line, as shown in fig. 2 b.

Figures 3a-c illustrate an exemplary ultra-wideband assembly 300 including an electrically conductive tapered core 302 having a metal bracket 320, the metal bracket 320 configured to couple the core 302 to a circuit board, according to some embodiments of the invention.

Core 302 includes a conductive wire winding 304 configured to be wound around core 302 in a manner similar to the winding wound around core 101 shown in fig. 1 a-h. The conductive tapered core 302 includes an outer surface 306, a distal end 308, and a proximal end 310. Distal end 308 is configured to have a larger surface area than proximal end 310. The proximal end 310 is configured to be arranged substantially adjacent to a microstrip transmission line of a circuit board (not shown in fig. 3 a-c). The conductive wire 304 includes a proximal end 312 and a distal end 314. The proximal end 312 is configured to be disposed substantially adjacent to the proximal end 310 of the core 302. The distal end 314 is configured to be disposed substantially adjacent to the distal end 308 of the core 302. The proximal end 312 of the wire 304 is configured to be connected to a transmission line of a circuit board.

In some embodiments, the ultra-wideband assembly 300 includes a dielectric layer 334 configured to be disposed substantially near the proximal end 310 of the core 302. In some embodiments, the dielectric layer 334 is configured to be disposed on top of at least a portion of the conductive lines 304. The thickness of dielectric layer 334 may range from about 0.004 inches to about 0.035 inches. The thickness of the dielectric layer 334 may be about 0.010 inches. In some embodiments, the material of the dielectric layer may be Rogers RO4350, manufactured by Rogers corporation of Rogers, connecticut, usa, which is a glass filled with a hydrocarbon ceramic. The material is characterized by its strength, mechanical rigidity and stability over a wide range of temperatures. Other similar low loss, low dielectric constant materials having a thickness of 0.010 inches or less may be used if desired. In some embodiments, the width of the dielectric layer 334 may be uniform throughout, i.e., it may have the same width from one end near the transmission line to the other end away from the transmission line. In some embodiments, the width of the dielectric layer 334 may vary as a whole, for example, it may be narrower near the end of the transmission line and it may be wider away from the end of the transmission line. Alternatively, its width may be non-uniform, with some portions of layer 334 being wider than other portions.

In alternative embodiments, the thickness of the dielectric layer may vary throughout the dielectric layer 334. Further, in some embodiments, the dielectric layer may be disposed on one side of the tapered core while leaving the other side of the dielectric layer free of the dielectric layer. In some embodiments where the dielectric layer is disposed on the top side of the wound core, the connection between the tip of the thin wire wound around the core and the microstrip line (or any other type of transmission line) allows the tip to be closer to the microstrip line, thereby reducing the resonant response. In embodiments where the dielectric is disposed on the bottom side of the core, i.e., closer to the transmission line (which places the tip of the wire further away from the transmission line), the resonant response may be enhanced.

In some embodiments, the dielectric layer includes metal pads 338. The metal pad 338 is configured to be disposed on at least a portion of the dielectric layer 334 and substantially adjacent to the proximal end of the core 304. The metal pad 338 may be configured to provide secure contact with the proximal end 312 of the wire 304. In some embodiments, metal pad 338 has a thickness in the range of about 0.0005 inches to about 0.003 inches. In some implementations, the thickness may be about 0.0007 inches (i.e., half ounce copper clad thickness). The surface area of the metal pad 338 can be configured to be about 0.003 square inches (i.e., about 0.025 inches by 0.012 inches). In some embodiments, the metal pad is configured to be fabricated from copper initially chemically deposited on the dielectric. Electroless plating is an autocatalytic reaction used to deposit a metal coating on a substrate. Unlike electroplating, it is not necessary to pass an electric current through the solution to form a deposit. Electroless plating has several advantages over electroplating. It provides uniform deposition regardless of workpiece geometry, without flux density and power supply issues, and can be deposited on non-conductive surfaces using appropriate pre-plating catalysts. After electroless plating, the tip of the copper plated dielectric material is plated with tin, a combination of lead and tin, silver, gold, or any other suitable metal.

As shown in fig. 3a-c, the dielectric layer 334, along with the metal pad 338, are configured to protrude away from the proximal end 312 of the conductive core 304. The metal pads are configured to contact the transmission lines (not shown in fig. 3 a-c) of the circuit.

In some embodiments, the dielectric layer 334 is fabricated from pure ceramic, ceramic-reinforced glass or polytetrafluoroethylene ("PTFE") based materials, PTFE materials reinforced with glass fibers, hydrocarbon ceramic composites, various rigid plastics, or any other suitable material. The metal pad 338 is made of copper, nickel, silver, gold, palladium, or any other suitable material.

In some embodiments, the distal end 314 of the wire 304 is configured to be coupled to the support bracket 320. One end or core attachment portion 324 of carrier 320 is configured to couple to distal end 308 of core 302, as shown in fig. 3 a-c. The other end or base portion 326 of the bracket 320 is configured to be coupled to a circuit board. The base portion 326 is also configured to conductively couple to a circuit board 354. The carrier 320 is configured to position the core 302 with the windings 304 at a particular angle relative to a circuit board (not shown in fig. 3 a-c).

Fig. 4a illustrates an exemplary capacitor assembly system 400 for mounting a capacitor to a dielectric plate to minimize interference of the assembly with the electric field of a transmission line after the capacitor is mounted, according to some embodiments of the invention. Fig. 4a shows a capacitor 402 mounted to a dielectric plate 404. The capacitor 402 may be an ultra wideband or any other capacitor. The capacitor 402 is configured to be mounted to the dielectric plate 404 using a low loss high temperature epoxy. In some embodiments, an air space 406 is created between the capacitor 402 and the dielectric 404 when the capacitor 402 is mounted to the dielectric plate 404. When the dielectric material is in close proximity to the transmission line or the component carrying the energy (e.g., a capacitor), the dielectric material attracts the energy into itself and changes the electrical properties of the object from which it draws energy (i.e., the electric field). This undesirable situation is minimized by removing the dielectric as much as possible from the sensitive areas of the structures.

In some embodiments, the capacitor is configured to be directly connected to a transmission line of the circuit (not shown in fig. 4 a). In other embodiments, the capacitor may include a strap lead 445 (a, b) as shown in fig. 4b, which may be used to connect the capacitor to a transmission line of a circuit. The capacitor assembly 400 is configured to minimize interference of an electric field of a transmission line of a circuit after the capacitor 402 is installed.

Figures 5a-f illustrate an exemplary embodiment of an ultra-wideband assembly 500 that includes a surface mountable ultra-wideband bias supply in accordance with some embodiments of the present invention. The assembly includes a tapered core 502, an inductor 560, an ultra-wideband capacitor 562, a bypass capacitor 564, and resistors 582, 584.

Core 502 includes a conductive wire winding 504, conductive wire winding 504 configured to be wound around core 502 in a manner similar to the winding wound around core 101 shown in fig. 1 a-h. The conductive tapered core 502 includes an outer surface 506, a distal end 508, and a proximal end 510. Distal end 508 is configured to have a larger surface area than proximal end 510. The proximal end 510 is configured to be disposed substantially adjacent to a microstrip transmission line 552 of a circuit board 554. The conductive wire 504 includes a proximal end 512 and a distal end 514. The proximal end 512 is configured to be disposed substantially adjacent to the proximal end 510 of the core 502. The distal end 514 is configured to be disposed substantially adjacent to the distal end 508 of the core 502. The proximal end 512 of the wire 504 is configured to connect to a transmission line 552 of a circuit board 554.

The distal end 508 of the core 502 is configured to couple to a low frequency inductor 560. Low frequency inductor 560 is configured to be mounted on dielectric substrate 570, which dielectric substrate 570 is in turn coupled to circuit board 554, as shown in fig. 5 a-f. In some embodiments, inductor 560 has a value of 220 μ H and is capable of withstanding 300 mA. As can be appreciated by those skilled in the art, the inductor 560 may have different inductance values and may be able to withstand currents having different values. The above-mentioned numbers are provided herein for illustrative purposes only and are not intended to limit the scope of the present invention.

Ultra-wideband assembly 500 also includes an ultra-wideband capacitor 562 mounted to dielectric substrate 570, as further shown in more detail in fig. 5 d. The capacitor 562 can be configured to be mounted to the dielectric substrate 570 in a similar manner to the capacitor shown in fig. 4 a-b. Thus, core 502 is configured to couple to capacitor 562, which in turn may be configured to couple to transmission line 552 of circuit board 554. The proximal end 512 of the conductive wire 504 is used to couple the capacitor 562 to the core near its proximal end 510. In some embodiments, capacitor 562 may be coupled directly to transmission line 552. In an alternative embodiment, capacitor 562 may comprise a conductive lead (shown in fig. 4 b) that may be coupled to transmission line 552.

The assembly 500 also includes a bypass capacitor 564 mounted on the dielectric substrate 570. The capacitor 564 may be configured to be connected in parallel with the DC port of the bias T-component to ground. In some embodiments, there may be more than one bypass capacitor 564 connected to the bias T-assembly 500. Bypass capacitor 564 may be configured to short any RF energy signal leaking through ultra-wideband inductor 560 and core assembly 502 to ground. This is accomplished by connecting bypass capacitor 564 to the "cold side" of ultra-wideband inductor 560 and ground. As shown in fig. 5a and 5f, a bypass capacitor 564 is disposed in the rear of the assembly 500. As can be appreciated by those skilled in the art, the location of the bypass capacitor 564 is not limited to being disposed in the rear of the bias T assembly 500. The capacitor may be placed anywhere and then coupled to the component, as discussed above. In some embodiments, the capacitance of the bypass capacitor 564 may range from 100 nanofarads ("nF") to over 220 nF. In some embodiments, the capacitance of the bypass capacitor may be expanded beyond the ranges described above in various applications.

In some embodiments, the assembly 500 may also include a damping resistor 584 and an isolation resistor 582 as shown in fig. 5 a-b. Resistor 584 is connected in parallel with ultra-wideband inductor 560 and is primarily used to dampen the resonant response within inductor 560. Resistor 582 is an isolation resistor that suppresses any potential interaction between networks that may be coupled to bias T-component 500 and its respective electrical DC feeder. In some embodiments, the resistance of the damping resistor 584 is configured to be in the range of 180Ohm and higher. The resistance of the isolation resistor 582 is configured to be in the range of about 0Ohm to about 100 Ohm.

The dielectric or base substrate 570 material may be fabricated from any insulating, rigid, low loss dielectric, a uniform composite or reinforced fabric structure having a loss tangent of 0.005 or less, which is a measure of the loss rate of power dissipating electrical modes (e.g., oscillations) in the system, and a dielectric constant of 10 or less would also be acceptable. Any other suitable material may be used for the dielectric substrate 570, as will be appreciated by those skilled in the art.

In some embodiments, ultra-wideband assembly 500 may be configured to attenuate signals in the frequency range of 16KHz to about 40 GHz. In an alternative embodiment using a smaller secondary coil, the signal is attenuated in the frequency range of 300KHz to about 40 GHz. In some embodiments, the upper and lower limits of the above-described frequency ranges may be set specifically for a particular application and may be configured to correlate to the values of inductor 560 and coil assembly 502, as well as ultra-wideband capacitor 562. In some embodiments, the attenuated signal frequencies may range from below 10KHz to over 100 GHz.

In some embodiments, assembly 500 also includes a protective cover 575 configured to protect isolation resistor 582 and damping resistor 584, respectively. The protective cover 575 can be made of any insulating rigid material, either a homogeneous composite or a reinforced fabric structure. The assembly 500 may also be coupled to an external DC power line 590, as shown in more detail in fig. 5a, 5c and 5 f. In some embodiments, a mylar tape or any other insulator 599 is configured to insulate the base contact of the bias power supply assembly from the microstrip line ground contact. In some embodiments, the RF ground contacts of the assembly are made of three bypass caps 588. As shown in fig. 5B, a resistor 582 may be connected in series with the bias supply line 577.

Fig. 5g shows an alternative embodiment of the bias T-assembly 540. Assembly 540 includes a support metal bracket 542, a coil assembly 544, and a capacitor assembly 546. The component 540 is connected to a microstrip circuit line 547. Bracket 542 is similar to brackets 220 and 320 discussed with respect to fig. 2a and 3a-c, and may be configured to couple to a circuit board (not shown in fig. 5 c). The coil assembly 544 is similar to the coil assembly discussed with respect to fig. 1a-3c and 5 a-b. Capacitor assembly 546 is also discussed with respect to fig. 4 a. In some embodiments, the capacitor assembly 546 may be similar to the capacitor assembly 440 shown in fig. 4 b. As shown in fig. 4b, capacitor assembly 440 includes a capacitor 442 configured to be coupled to a transmission line or microstrip line (not shown in fig. 4 b) via conductive stripline leads 445a and 445b, respectively. Exemplary capacitor 442 may be an ultra-wideband capacitor, such as a 545L-type capacitor manufactured by U.S. technical ceramics, Inc. and disclosed in commonly owned U.S. patent number 7,248,458 to Mruz, the disclosure of which is incorporated herein by reference in its entirety. As shown in fig. 4b, the coating 443 is configured to protect the surrounding channels (not shown in fig. 4 b) of the capacitor 442. The capacitance value of capacitor assembly 440 may be similar to the capacitance values described above with respect to the assembly shown in fig. 4 a. Referring back to fig. 5g, the capacitor 546 may include a ribbon lead that connects the capacitor assembly to the transmission line 547. Similar to fig. 4a-b, the capacitance of the entire device may be substantially equal to the capacitance of the device shown in fig. 4 a-b. The assembly 540 also includes a low loss dielectric element 549 (e.g., having a dielectric constant less than 10; materials having other dielectric constants may be used as will be appreciated by those skilled in the art). In some embodiments, the thickness of the dielectric element 549 may be about 0.010 inches thick. The dielectric 549 is glued to the coil and the capacitor is glued to its two legs 575a and 575b as shown in fig. 5 g. The wire from the tip of the coil 544 is then directly connected to one of the two capacitor terminals. This forms a bias supply 540. Because there is no secondary, the low frequency side of the bias supply is about 2 MHz; the upper end is about 40 GHz. In some embodiments, when a secondary coil is included, the component 540 may cover a frequency range from below 16KHz to above 40 GHz.

Fig. 6 shows two typical graphs depicting the insertion loss and return loss characteristics of the bias power supply assembly shown in fig. 5 a-f. As can be seen from the curves, no resonance is observed from 400MHz to 40 GHz. Furthermore, the insertion loss and return loss are kept below 0.8dB and 15dB, respectively. The device remains substantially resonance free up to a roll-off frequency of 3dB below it (typically below 100 KHz).

Fig. 7a illustrates an exemplary ultra-wideband assembly 700, according to some embodiments of the invention, that includes a tapered core 716 coupled to a support bracket 710, the support bracket 710 configured to be coupled to a circuit board or any other substrate 702. Core 716 includes a conductive wire winding 714, conductive wire winding 714 configured to be wound about core 716 in a manner similar to the winding wound about the core shown and discussed with respect to fig. 1a-5 g. The wire 714 may be wound around the core 716 in any desired number of turns. The tapered core 716 includes a distal end 724 and a proximal end 722. Distal end 724 is configured to have a larger surface area than proximal end 722. The proximal end 722 is configured to be disposed substantially adjacent to the microstrip transmission line 704 of the circuit board 702 at the coupling point 720. The conductive wire 714 includes a proximal end and a distal end (not shown in fig. 7 a). The proximal end of the wire 714 is configured to be disposed substantially adjacent to the proximal end 722 of the core 716. The distal end of the wire 714 is configured to be disposed substantially adjacent to the distal end 724 of the core 716. The proximal end of the wire 714 is configured to be connected to the transmission line 704 of the circuit board 702 at the coupling point 720. The distal end of the wire 714 is configured to couple and/or electrically couple and/or couple in any other manner to the bracket 710.

The bracket 710 is configured to include a horizontal or core attachment portion 712 and a vertical or base portion 732. The horizontal portion 712 is configured to include a flat top surface 715 and flat side surfaces 717 (a, b) and a core end 736 having an angled end surface. The vertical portion 732 is configured to include an end 734, the end 734 configured to be coupled to the substrate or circuit board 702. The vertical portion 732 may be soldered 718 to the circuit board 702. As will be appreciated by one of ordinary skill in the relevant art, the bracket 710 may be glued, fused, soldered, heat sealed, molded into the circuit board, or connected to the circuit board in any manner. The horizontal portion 712 is configured to be coupled to the vertical portion 732 and includes a core end 736, the horizontal portion 712 being configured to be mounted to the core 716 at the core end 736. The core end 736 of the horizontal portion 712 is configured with a beveled end face to allow coupling of the distal end 724 of the core 716. The core end 736 may also be configured to have an area substantially equal to or greater than the area of the distal end 724 of the core 716. In some embodiments, the area of the angled end face of the core end 736 may be less than the area of the distal end 724 of the core 716. The horizontal portion 712 is configured to be disposed at a substantially right angle relative to the vertical portion 732. As can be appreciated by one of ordinary skill in the relevant art, the horizontal and vertical portions of the bracket 710 can be coupled to each other at any desired angle.

The horizontal portion 712 and the vertical portion 732 are configured to couple to each other to allow the core 716 to be positioned at a predetermined angle γ with respect to the circuit board 702. In some embodiments, the angle γ between the central axis of the tapered core 716 and the horizontal top surface of the microstrip plate may be in the range of 25 degrees or more to 90 degrees (i.e., the core 716 is mounted substantially vertically, whereby the end face of the core end 736 of the bracket 710 may be configured to be substantially parallel to the surface of the circuit board 702). In some embodiments, the angular range is in the range of 40 degrees to 70 degrees. In some embodiments, the angle γ is 63 degrees from the microstrip line, as shown in fig. 2 a. The angle γ may be configured according to the angle of the inclined end face of the core end 736 of the bracket 710. Thus, a decrease in the angle of the inclined end face relative to the top surface of the horizontal portion 712 implies an increase in the angle γ, and vice versa.

The vertical and horizontal portions of the bracket 710 may be formed from a single piece of material, or may be welded, glued, welded, or connected to each other in any desired manner. The horizontal portion 712 is configured to be coupled to the core 716 via gluing, welding, soldering, epoxy, or in any other desired manner.

Fig. 7b illustrates another example ultra-wideband assembly 760 comprising a tapered core 716 coupled to a support bracket 710, the support bracket 710 configured to couple the core 716 to a circuit board 702, according to some embodiments of the invention. Similar to fig. 7a, core 716 includes conductive wire winding 714, conductive wire winding 714 being configured to be wound around core 716 in a manner similar to the winding wound around the core shown in fig. 1a-5 g. In some embodiments, the ultra-wideband component 760 comprises a dielectric layer 750, the dielectric layer 750 configured to be disposed substantially near the proximal end 722 of the core 716. In some embodiments, dielectric layer 750 is configured to be disposed on top of at least a portion of conductive lines 714. The thickness of dielectric layer 750 may range from 0.004 inches to about 0.035 inches. The dielectric layer 750 may be about 0.010 inches thick. In some embodiments, the material of the dielectric layer may be characterized by low dissipation loss over a wide range of temperatures, predetermined strength, mechanical rigidity, and stability (e.g., Rogers RO4350, a hydrocarbon ceramic filled glass, manufactured by Rogers corporation of Rogers, connecticut, usa). Other similar low loss, low dielectric constant materials having a thickness of 0.025 inches or less may be used if desired, as will be appreciated by those of ordinary skill in the relevant art. The dielectric layer may also be configured to have a uniform or varying width similar to that discussed and illustrated with respect to fig. 3a-c above.

In some embodiments, the thickness of the dielectric layer may vary throughout the dielectric layer 750. The dielectric layer 750 may be disposed on at least one side of the core 716 while leaving at least another side free of the dielectric layer. In some embodiments where the dielectric layer is disposed on the top side of the wound core, the connection between the tip of the thin wire wound around the core and the microstrip line 704 (or any other type of transmission line) allows the tip to be closer to the microstrip line 704, thereby reducing the resonant response. In embodiments where the dielectric is disposed on the bottom side of the core (i.e., closer to the transmission line 704 (which places the tip of the wire further from the transmission line)), the resonant response may be enhanced, as discussed above with respect to fig. 3 a-c.

Similar to the embodiment shown in fig. 3a-c, dielectric layer 750 may include metal pads 754. The metal pad 754 may be configured to be disposed on at least a portion of the dielectric layer 750 and substantially adjacent to the proximal end 722 of the core 716. The metal pad 754 may be configured to provide a secure contact with the proximal end of the wire 714. Similar to fig. 3a-c and the corresponding discussion, the metal pad is configured to be fabricated from copper that may be initially chemically deposited on the dielectric. In some embodiments, the metal pad may have a thickness in the range of about 0.0005 inches to about 0.003 inches. In some implementations, the metal pad 754 can be configured to "wrap around" the dielectric layer 750, as shown in fig. 9. This "wrap around" may allow the metal pad 754 to better adhere to the dielectric layer 750. The "rolling" of the metal pads 754 may be done around any surface of the dielectric layer 750 (e.g., both sides and bottom surface; front and back surfaces and bottom surface; or in any other manner). The metal pads 754 may be coupled to the dielectric layer 750 in any other suitable manner.

In some embodiments, dielectric layer 750 may be made of: pure ceramic, ceramic reinforced glass or polytetrafluoroethylene ("PTFE") based materials, PTFE materials reinforced with glass fibers, hydrocarbon ceramic composites and, various rigid plastics, or any other suitable material. The metal pad may be made of copper, nickel, silver, gold, palladium, or any other suitable material.

Fig. 8a-B show exemplary graphs comparing the performance of tapered cores, where curve a corresponds to a tapered core mounted on the bracket 710 and curve B corresponds to a tapered core not mounted on the bracket 710. The performance comparison was performed over a frequency range of 400MHz to 40 GHz. As can be seen from fig. 8a-b, the two cores behave essentially the same. However, the conductive tapered core mounted on the bracket 710 may be advantageously used for easy and convenient mounting at any desired angle relative to the circuit board. Furthermore, the use of the cradle 710 allows for efficient manufacturing (e.g., the core coupled to the cradle may be placed on a "tape" reel) and placement on a circuit board, as well as coupling to a transmission line in a "pick-and-place" manner using appropriate equipment.

In some embodiments, the bracket 710 may be made of brass, aluminum, or any other metal and/or alloy of metals. In some embodiments, the bracket may be made of a non-metallic material. In this embodiment, contact may be provided to the distal lead. In some embodiments, the bracket may be made of a non-metallic substance, but may be metallized. Other types of materials may be used to fabricate the bracket 710, which may include a flat top surface, and the bracket 710 may be surface mount technology ("SMT") compatible.

In some embodiments, the present invention relates to an ultra-wideband assembly in an electrical circuit having a circuit board with a conductive micro-strip line, and a method of manufacturing the same. The assembly may include a non-conductive tapered core having an outer surface, a distal end, and a proximal end. The distal end may be larger than the proximal end. The assembly may also include a conductive wire having a proximal end and a distal end and wound around at least a portion of the non-conductive tapered core. The proximal end of the conductive wire may extend away from the proximal end of the non-conductive tapered core and be conductively coupled to a microstrip line of the circuit board. The distal end of the conductive wire may extend away from the distal end of the non-conductive tapered core. The conductive wire may contact at least a portion of an outer surface of the non-conductive tapered core. The assembly may also include a support bracket coupled to the non-conductive tapered core, the support bracket having a base portion and a core connection portion. The base portion may be conductively coupled to a circuit board. The core connection portion may be coupled to a distal end of the non-conductive tapered core and also conductively coupled to a distal end of the conductive wire. When coupled to the non-conductive tapered core, the support bracket is configured to arrange the non-conductive tapered core at a predetermined angle to the circuit board.

In some embodiments, the invention may include the following optional features. The predetermined angle may be in the range of 10 degrees or more to substantially 90 degrees with respect to the circuit board. The assembly may further include a dielectric layer disposed on top of at least a portion of the conductive wire wound on the non-conductive tapered core, the dielectric layer being disposed substantially near the proximal end of the non-conductive tapered core. The assembly may also include a metal pad coupled to the dielectric layer at the proximal end of the non-conductive tapered core. The dielectric layer may be configured to extend away from an outer surface of the non-conductive tapered core. The dielectric layer may have a thickness ranging between about 0.004 inches to about 0.035 inches. The dielectric layer may be made of a low loss dielectric material having a low dielectric constant. The dielectric material may be a hydrocarbon ceramic-filled glass. The metal pad may have a thickness ranging between about 0.0005 inches to about 0.003 inches. The metal pad may comprise a copper layer, whereby the copper layer is configured to be initially electroless deposited on the dielectric layer and then electroplated onto the dielectric layer, and then the copper layer is configured to be plated with a metal selected from the group consisting of tin, a lead/tin combination, silver, and gold. The metal pad can be configured to contact the proximal end of the conductive wire to create a robust contact with the microstrip line of the circuit board. The support bracket and the distal end of the conductive wire may provide secure contact with the circuit board. The non-conductive tapered core may have a tetrahedral shape. The non-conductive tapered core may have a triangular pyramid shape. The non-conductive tapered core may have a multi-dimensional polyhedral shape. The non-conductive tapered core may be comprised of iron powder. The assembly may be configured to reduce insertion loss in a frequency range from below 10KHz to over 100 GHz. The dielectric material may be fabricated from a material selected from the group consisting of: hydrocarbon ceramic filled glass, ceramic reinforced glass or PTFE based materials, PTFE materials reinforced with glass fibers, hydrocarbon ceramic composites and rigid plastics.

Exemplary embodiments of the methods and components of the present invention are described herein. As noted elsewhere, these exemplary embodiments are described for illustrative purposes only, and are not limiting. Other embodiments are possible and are encompassed by the present invention. Such embodiments will be apparent to those skilled in the relevant art based on the teachings contained herein. Thus, the breadth and scope of the present invention should not be limited by any of the above-described exemplary embodiments, but should be defined only in accordance with the following claims and their equivalents.

Claims (36)

1. An ultra-wideband assembly for coupling into a circuit having a circuit board with a conductive micro-strip line, the ultra-wideband assembly comprising:

a non-conductive tapered core having:

an outer surface;

a distal end; and

at the proximal end thereof,

the distal end is larger than the proximal end;

a conductive wire having a proximal end and a distal end and wound around at least a portion of the non-conductive tapered core;

the proximal end of the conductive wire extends away from the proximal end of the non-conductive tapered core and is configured to be conductively coupled to a microstrip line of a circuit board;

the distal end of the conductive wire extends away from the distal end of the non-conductive tapered core;

the conductive wire is in contact with at least a portion of the outer surface of the non-conductive tapered core;

a support bracket coupled to the non-conductive tapered core and having:

a base portion; and

a core connection portion coupled to the base portion at a right angle and having an angled end face coupled to the distal end of the non-conductive tapered core, and the area of the core connection portion is less than the area of the distal end of the non-conductive tapered core;

the base portion is configured to be conductively coupled to the circuit board at a substantially right angle;

the core connection portion is coupled to the distal end of the non-conductive tapered core and is also conductively coupled to the distal end of the conductive wire;

the support bracket is configured to arrange the non-conductive tapered core at a predetermined angle to the circuit board, the predetermined angle being determined by an angle of the inclined end face.

2. The assembly according to claim 1, wherein said predetermined angle is in a range of 10 degrees or more to 10 degrees up to substantially 90 degrees relative to said circuit board.

3. The ultra-wideband assembly of claim 1, further comprising a dielectric layer disposed on top of at least a portion of the conductive wire wound on the non-conductive tapered core, the dielectric layer disposed substantially near the proximal end of the non-conductive tapered core.

4. The assembly according to claim 3, further comprising a metal pad coupled to said dielectric layer at said proximal end of said non-conductive tapered core.

5. The assembly according to claim 4, wherein said metal pad has a thickness in a range between 0.0005 inches to 0.003 inches.

6. The assembly according to claim 4, wherein said metal pad comprises a copper layer, wherein said copper layer is configured to be initially electroless deposited on said dielectric layer and then electroplated onto said dielectric layer, and then said copper layer is configured to be plated with a metal selected from the group consisting of tin, lead/tin combination, silver, and gold.

7. The assembly according to claim 4, wherein said metal pad is configured to contact said proximal end of said conductive wire to create a robust contact with said microstrip line of said circuit board.

8. The assembly according to claim 3, wherein said dielectric layer is configured to extend away from said outer surface of said non-conductive tapered core.

9. The assembly according to claim 3, wherein said dielectric layer has a thickness in a range between 0.004 inches to 0.035 inches.

10. The assembly according to claim 3, wherein said dielectric layer is made of a low-loss dielectric material having a low dielectric constant.

11. The ultra-wideband assembly of claim 10, wherein the dielectric material is a hydrocarbon ceramic-filled glass.

12. The assembly according to claim 3, wherein said support bracket and said distal end of said conductive wire provide robust contact with said circuit board.

13. The assembly according to claim 3, wherein said dielectric material is made of a material selected from the group consisting of: hydrocarbon ceramic filled glass, ceramic reinforced glass or PTFE based materials, PTFE materials reinforced with glass fibers, hydrocarbon ceramic composites and rigid plastics.

14. The assembly according to claim 1, wherein said non-conductive tapered core has a tetrahedral shape.

15. The assembly according to claim 1, wherein said non-conductive tapered core has a triangular pyramid shape.

16. The assembly according to claim 1, wherein said non-conductive tapered core has a multi-dimensional polyhedral shape.

17. The assembly according to claim 1, wherein said non-conductive tapered core is comprised of powdered iron.

18. The ultra-wideband assembly as defined in claim 1, wherein the ultra-wideband assembly is configured to reduce insertion loss in a frequency range from below 10KHz to over 100 GHz.

19. A method of manufacturing an ultra-wideband assembly for placement in an electrical circuit having a circuit board with a conductive micro-strip line, the method comprising:

providing a non-conductive tapered core, and,

the non-conductive tapered core comprises:

an outer surface;

a distal end; and

at the proximal end thereof,

the distal end is larger than the proximal end;

providing a conductive wire having a proximal end and a distal end and wound around at least a portion of the non-conductive tapered core;

wherein

The proximal end of the conductive wire extends away from the proximal end of the non-conductive tapered core and is configured to be conductively coupled to a microstrip line of a circuit board;

the distal end of the conductive wire extends away from the distal end of the non-conductive tapered core;

the conductive wire is in contact with at least a portion of the outer surface of the non-conductive tapered core;

providing a support bracket for coupling to the non-conductive tapered core;

the support bracket has:

a base portion; and

a core connection portion coupled to the base portion at a right angle and having an angled end face coupled to the distal end of the non-conductive tapered core, and the area of the core connection portion is less than the area of the distal end of the non-conductive tapered core;

the base portion is configured to be conductively coupled to the circuit board at a substantially right angle;

the core connection portion is coupled to the distal end of the non-conductive tapered core and is also conductively coupled to the distal end of the conductive wire;

the support bracket is configured to arrange the non-conductive tapered core at a predetermined angle to the circuit board, the predetermined angle being determined by an angle of the inclined end face.

20. The method of claim 19, wherein the predetermined angle is in a range of equal to 10 degrees or more than 10 degrees up to substantially 90 degrees relative to the circuit board.

21. The method of claim 19, further comprising providing a dielectric layer disposed on top of at least a portion of the conductive wire wound on the non-conductive tapered core, the dielectric layer disposed substantially near the proximal end of the non-conductive tapered core.

22. The method of claim 21, further comprising:

providing a metal pad;

coupling the metal pad to the dielectric layer at the proximal end of the non-conductive tapered core.

23. The method of claim 22, wherein the metal pad has a thickness ranging between 0.0005 inches to 0.003 inches.

24. The method of claim 22, wherein the metal pad comprises a copper layer, wherein the copper layer is configured to be initially electroless deposited on the dielectric layer and then electroplated onto the dielectric layer, and then the copper layer is configured to be plated with a metal selected from the group consisting of tin, a lead/tin combination, silver, and gold.

25. The method of claim 22, wherein the metal pad is configured to contact the proximal end of the conductive wire to create a robust contact with the microstrip line of the circuit board.

26. The method of claim 21, wherein the dielectric layer is configured to extend away from the outer surface of the non-conductive tapered core.

27. The method of claim 21, wherein the dielectric layer has a thickness ranging between 0.004 inches to 0.035 inches.

28. The method of claim 21, wherein the dielectric layer is fabricated from a low-loss dielectric material having a low dielectric constant.

29. The method of claim 28, wherein the dielectric material is a hydrocarbon ceramic-filled glass.

30. The method of claim 21, wherein the support bracket and the distal end of the conductive wire provide secure contact with the circuit board.

31. The method of claim 21, wherein the dielectric material is fabricated from a material selected from the group consisting of: hydrocarbon ceramic filled glass, ceramic reinforced glass or PTFE based materials, PTFE materials reinforced with glass fibers, hydrocarbon ceramic composites and rigid plastics.

32. The method of claim 19, wherein the non-conductive tapered core has a tetrahedral shape.

33. The method of claim 19, wherein the non-conductive tapered core has a triangular pyramid shape.

34. The method of claim 19, wherein the non-conductive tapered core has a multi-dimensional polyhedral shape.

35. The method of claim 19, wherein the non-conductive tapered core is comprised of iron powder.

36. The method of claim 19, wherein the ultra-wideband assembly is configured to reduce insertion loss in a frequency range from below 10KHz to over 100 GHz.