HK1176220B

HK1176220B - Electronic device

Info

Publication number: HK1176220B
Application number: HK13103260.2A
Authority: HK
Inventors: 关根重信; 关根由莉奈
Original assignee: 纳普拉有限公司
Priority date: 2011-03-08
Filing date: 2013-03-15
Publication date: 2015-08-21

Description

Electronic device

Technical Field

The present invention relates to an electronic device, that is, an electrical product using an electronic engineering technique. The electronic device of the present invention includes not only a general electronic device in which electronic components are arranged on a substrate, but also an electronic device such as a solar cell, a solar power generator, a light emitting device using a light emitting diode, a lighting device, and a signal lamp.

Background

It is known that an electronic device is formed by forming a wiring pattern having a predetermined pattern on one surface of a substrate and soldering electronic components such as active components and passive components to the wiring pattern. The wiring pattern is obtained by applying a resist to a Cu foil formed in advance on a substrate and then patterning the Cu foil through a photolithography process. A solder resist film made of a thermosetting epoxy resin or the like is formed on a substrate so that only a Cu foil of a portion of a wiring pattern where electronic parts need to be soldered is exposed and solder is not applied to the portion where soldering is not needed. Then, the electronic component is soldered to the exposed Cu foil.

As described above, in the conventional electronic device, it is necessary to manufacture the electronic device through a plurality of steps such as preparation of a copper clad substrate, a resist coating step, a photolithography step, a solder resist coating step, and a component mounting step. Therefore, there is a limit in reducing costs and improving mass productivity.

Unlike the above method, a method of directly screen-printing a conductive paste on a substrate may be used. The conductive paste used in this case is obtained by dispersing metal powder or alloy powder as a conductive component in an organic vehicle. The organic color-developing material contains an insulating resin such as a thermosetting insulating resin or a thermoplastic insulating resin, and a solvent. In some cases, the component 3 may be added to improve the dispersibility of the metal powder or to ensure the nonflammability.

The wiring pattern thus obtained is a structure in which the metal powder is dispersed in the insulating resin. Therefore, the conductivity is deteriorated as compared with the case based on the metal conductor itself.

Therefore, in order to improve the conductivity, it is considered to increase the filling ratio by using a metal powder having a small particle diameter. However, the smaller the particle diameter of the metal powder, the more easily the metal powder is aggregated, so that uniform dispersion in the conductive paste is difficult, and the contact portion between adjacent metal particles increases to increase the connection resistance, so that the effect of improving the conductivity according to the increase in the filling ratio cannot be obtained.

Further, it is found that when silver powder or Cu powder is used as the metal powder, a wiring having good conductivity is obtained.

However, when an electric field is applied to the conductive paste containing silver powder in a high-temperature and high-humidity environment, the following disadvantages occur: silver electrodeposition called migration occurs in an electric circuit or an electrode, and a short-circuit phenomenon occurs between electrodes formed by wiring patterns or between wirings. As measures for preventing such migration, for example, a method of coating the surface of the silver powder with a moisture-proof paint, a method of adding a corrosion inhibitor such as a nitrogen compound to the conductive paste, and the like are known, but sufficient effects cannot be obtained (see japanese patent laid-open No. 2001-189107). Further, in order to obtain a conductor having high conductivity, the amount of silver powder to be added must be increased, and since silver powder is expensive, there is a disadvantage that electronic equipment becomes expensive.

Further, since the conductive paste containing Cu powder has high oxidation properties of Cu after heat curing, oxygen contained in the air and the binder (binder) reacts with the Cu powder to form an oxide film on the surface thereof, thereby significantly reducing the conductivity. As a countermeasure against this, japanese patent application laid-open No. 5-212579 discloses a Cu paste in which various additives are added to prevent oxidation of Cu powder and stabilize conductivity. However, this conductivity does not involve silver paste, and has disadvantages in storage and stability.

In order to improve migration and obtain an inexpensive conductive paste, a conductive paste using silver-plated Cu powder has been proposed (see japanese patent application laid-open nos. 7-138549 and 10-134636). However, if silver is formed into a film uniformly and thickly, the effect of improving migration may not be sufficiently obtained. On the other hand, when the film is formed thinly, the amount of the conductive powder to be filled needs to be increased in order to ensure good conductivity, and as a result, the adhesive strength (adhesive strength) may be decreased as the binder component is relatively decreased.

Furthermore, electronic devices used outdoors, such as solar cells, are required to have durability that is subjected to severe environmental changes over a long period of time. In particular, when the solar cell is installed in a desert or the like where sunshine is long, the temperature variation range of the installation site may exceed 100 ℃. However, in the conventional solar cell in which the electrode is formed by the above-described technique, there is a problem that the electrode deteriorates, peeling occurs, or the like in several years or so, when the solar cell is placed in such a severe natural environment.

Disclosure of Invention

Technical problem to be solved by the invention

The invention provides an electronic device having a high-quality and highly reliable metallization wiring which is excellent in conductivity, electrochemical stability, oxidation resistance, filling property, fineness, mechanical strength and physical strength, and has high adhesion to a substrate.

Means for solving the problems

In order to solve the above problem, an electronic apparatus of the present invention includes a substrate and an electronic component. The substrate has a metallization wiring, and the electronic component is electrically connected to the metallization wiring on the substrate.

The metallization wiring includes a metallization layer and an insulating layer. The metallized layer contains a high-melting-point metal component and a low-melting-point metal component, and the high-melting-point metal component and the low-melting-point metal component are diffusion-bonded to each other. The insulating layer is formed simultaneously with the metallization layer to form a protective film covering the outer surface of the metallization layer.

As described above, in the present invention, since the metallization layer contains the high-melting-point metal component and the low-melting-point metal component, diffusion bonding can be caused between the high-melting-point metal component and the low-melting-point metal component by the low melting point of the low-melting-point metal component.

As described above, since the high-melting-point metal component and the low-melting-point metal component are diffusion-bonded to each other, it is possible to realize an electronic device having a metallization layer which is excellent in electrochemical stability and oxidation resistance and in which migration, an oxide film, or the like is less likely to occur.

Further, since the high-melting-point metal component and the low-melting-point metal component are diffusion-bonded to each other to form a continuous metallized layer having almost no pores or broken lines, an electronic device having a metallized layer with improved filling degree and fineness of the metallized layer, high conductivity, and high mechanical and physical strength can be obtained. Further, since the electronic device contains the high-melting-point metal component and the low-melting-point metal component, an electronic device having a highly conductive metallized layer can be obtained by selecting the materials.

Further, since the insulating layer constitutes a protective film covering the outer surface of the metallized layer, it is possible to prevent damage to the outside of the metallized layer and to improve oxidation resistance, durability, and weather resistance. In addition to the adhesion and adhesion to the metallization layer itself of the substrate, the adhesion and adhesion due to the insulating layer also occur, thereby improving the adhesion and adhesion of the entire metallization line.

In addition, since the insulating layer is formed at the same time as the metallization layer, the metallization layer does not come into contact with air unlike a structure in which the metallization layer and the insulating layer are not formed at the same time. Therefore, an electronic device having a high-quality metallization layer that is not oxidized can be obtained.

As a combination of the above-described effects, an electronic device having high-quality and high-reliability metallization wiring that is excellent in conductivity, electrochemical stability, oxidation resistance, filling property, fineness, mechanical strength, and physical strength, and has high adhesion and adhesion to a substrate can be obtained.

The metallized wiring may be formed on a metal or alloy film such as a Cu film (Cu foil). When the metallization wiring composed of the high melting point metal component and the low melting point metal component is formed on the Cu film, the cross-sectional area of the entire metallization wiring can be increased and the electrical resistance can be reduced while the thickness of the Cu foil is kept constant. Further, the sectional area of the entire metallization line can be increased with the Cu foil being thinned, and the electrical resistance can be reduced.

In the present invention, the electronic device can include all electric products to which the electronic engineering technology is applied. In the present invention, a computer, a mobile phone, a laminated electronic device, an electronic apparatus, an electronic component, a solar cell, a light emitting diode, a light emitting device, a lighting device, a signal lamp, and a liquid crystal display are disclosed therein. These are defined by specific names, but are included in the scope of the electronic device in the present invention in terms of an electrical product to which the electronic engineering technique is applied.

Effects of the invention

As described above, according to the present invention, it is possible to provide an electronic device having a high-quality and highly reliable metallization line which is excellent in electrochemical stability, oxidation resistance, filling property, fineness, conductivity, mechanical strength, and physical strength, and has high adhesion and adhesion to a substrate.

The present invention will be better understood from the following detailed description and the accompanying drawings, which are illustrative only and thus should not be considered as limiting the present invention.

Drawings

Fig. 1 is a diagram showing an example of an electronic device according to the present invention.

Fig. 2 is a cross-sectional view showing a part of a metallization wiring used in the electronic apparatus shown in fig. 1.

Fig. 3 is a sectional view taken along line 3-3 of fig. 2.

Fig. 4 is a cross-sectional view of a metallization trace used in the electronic device shown in fig. 1 at another location.

Fig. 5 is a diagram showing a conductive paste for forming a metalized wiring.

Fig. 6 is a view showing a state in which the conductive paste shown in fig. 5 is applied.

Fig. 7 is a diagram showing another example of the conductive paste for forming a metalized wiring.

Fig. 8 is a cross-sectional view showing another example of the metallization line used in the electronic device of the present invention.

Fig. 9 is a cross-sectional view taken along line 9-9 of fig. 8.

Fig. 10 is a photograph of a cross-section of a metallization line of an electronic device of the present invention.

Fig. 11 is a photograph of a cross section of a metallized wiring of a comparative example.

Fig. 12 is a diagram showing a configuration of a computer as an example of an electronic device of the present invention.

Fig. 13 is a diagram showing a configuration of a mobile phone as another example of the electronic device of the present invention.

Fig. 14 is a diagram showing a laminated electronic device as an example of the electronic apparatus of the present invention.

Fig. 15 is a view showing a manufacturing process of the laminated electronic device shown in fig. 14.

Fig. 16 is a plan view of a solar cell as another example of the electronic device of the present invention.

Fig. 17 is a bottom view (opposite side to the light incident side) of the solar cell shown in fig. 16.

Fig. 18 is a cross-sectional view showing another example of the solar cell.

Fig. 19 is a block diagram of the solar power generation device shown in fig. 16 to 18.

Fig. 20 is a sectional view of a light-emitting diode as another example of the electronic device of the present invention.

Fig. 21 is a view showing a light-emitting device, a lighting device, or a signal lamp using the light-emitting diode shown in fig. 20.

Fig. 22 is a partial sectional view of a liquid crystal display in which the light-emitting diode shown in fig. 20 is used as a backlight.

Detailed Description

Referring to fig. 1, the electronic device of the present invention includes a substrate 11 and electronic components 141 to 146. These are generally disposed inside the outer package 2.

The substrate 11 includes a metallization line 12 having a predetermined pattern. The substrate 11 may be an organic substrate or an inorganic substrate. The substrate may be a substrate that can constitute a semiconductor circuit, and may be, for example, a Si substrate or a simple insulating substrate.

Electronic components 141 to 146 are electrically connected to metallization lines 12 on substrate 11. In fig. 1, reference numeral 14 is added to the electronic components 141 to 146 as a group. The electronic components 141 to 146 are active components, passive components, or a composite component thereof, and the number, kind, shape, and the like thereof vary depending on the function and design of the electronic device. The electronic components 141 to 146 affect the movement of electrons or the force field associated therewith in a predetermined manner in the electronic system, and function as intended by the system. The electronic components 141 to 146 are connected to each other by the metallization wiring 12, and constitute an electronic circuit having a predetermined function. The electronic components 141 to 146 may be packaged individually or may be packaged in a combined manner in the form of an integrated circuit and modularized.

Further, as a configuration included in the electronic device of the present invention, there is an electronic device which does not have a clear division between the substrate 11 and the electronic components 141 to 146 and in which the substrate 11 plays a role as the electronic components 141 to 146, for example, a solar cell or the like.

As shown in fig. 2 and 3, the metallization line 12 includes a metallization layer 121 and an insulating layer 122. The metallization layer 121 includes a high-melting-point metal component and a low-melting-point metal component, and the high-melting-point metal component and the low-melting-point metal component are diffusion-bonded to each other to form a series of continuous metal layers having a high packing density. The high melting point metal component may include at least 1 selected from the group of Ag, Cu, Au, Pt, Ti, Zn, Al, Fe, Si, or Ni, and the low melting point metal component may include at least one selected from the group of Sn, In, Bi, or Ga. The metallization layer 121 may also comprise carbon nanotubes.

The insulating layer 122 is made of an insulating resin, is formed simultaneously with the metallization layer 121, and constitutes a protective film covering the outer surface of the metallization layer 121. As shown in fig. 2 and 3, the insulating layer 122 has a predetermined thickness, and continuously covers the surface of the metallization layer 121, both side surfaces in the line width direction, and the end surfaces in the longitudinal direction.

In the electronic components 141 to 146, as shown in fig. 4, the terminal electrodes 13 pass through the insulating layer 122 and enter the metallization layer 121 on the lower side thereof, thereby being connected. The periphery of the terminal electrode 13 is covered with an insulating layer 122.

As described above, since the metallization layer 121 contains the high-melting-point metal component and the low-melting-point metal component, diffusion bonding can be caused between the high-melting-point metal component and the low-melting-point metal component by utilizing the low melting point of the low-melting-point metal component. In this way, the high melting point metal component and the low melting point metal component are diffusion bonded to each other, and therefore the following operational effects can be obtained.

First, since the high melting point metal component and the low melting point metal component are diffusion bonded to each other, an electronic device having a metallization layer 121 having excellent electrochemical stability and oxidation resistance can be realized.

For example, when Ag is used as the high-melting-point metal component, diffusion bonding occurs between Ag and the low-melting-point metal component in the metallization layer 121, and this increases the electrochemical stability thereof, thereby reliably preventing migration of Ag. In the case where Cu is used as the high melting point metal component, diffusion bonding is also caused between Cu and the low melting point metal component, and oxidation of Cu is prevented.

Next, since the high melting point metal component and the low melting point metal component are diffusion bonded to form the continuous metallized layer 121 having no pores or broken lines, the degree of filling and fineness of the metallized layer 121 are improved, the electrical conductivity is increased, and the mechanical and physical strength is increased. Since the electronic device contains the high-melting-point metal component and the low-melting-point metal component, the electronic device having the highly conductive metallized layer 121 can be obtained by selecting the materials.

Further, since the insulating layer 122 constitutes a protective film covering the outer surface of the metallization layer 121, not only can trauma of the metallization layer 121 be avoided, but also oxidation resistance, durability, and weather resistance can be improved. In addition to the adhesion and adhesion of the metallization layer 121 itself, the adhesion and adhesion of the insulating layer 122 are also generated, and thus the adhesion and adhesion of the entire metallization line 12 are improved.

Further, since the insulating layer 122 is formed at the same time as the metallization layer 121, the metallization layer 121 does not come into contact with air unlike the case where the metallization layer 121 and the insulating layer 122 are not formed at the same time. Therefore, an electronic device having a high-quality metallization layer 121 that is not oxidized can be obtained.

As a combination of the above-described effects, an electronic device having a high-quality and high-reliability metallization layer 121 which is excellent in conductivity, electrochemical stability, oxidation resistance, filling property, fineness, mechanical strength, and physical strength, and has high adhesion and adhesive force to a substrate can be obtained.

The metallization layer 121 and the insulating layer 122 can be formed using a conductive paste containing an insulating resin, a metal component, and a solvent. The insulating resin constituting the insulating layer 122 can be made of a material containing a thermosetting insulating resin or a thermoplastic insulating resin. In the case of using a thermosetting insulating resin, it is preferable that the curing point thereof is higher than the melting point of the low-melting-point metal component and lower than the melting point of the high-melting-point metal component.

Preferably, the insulating resin includes at least 1 selected from an epoxy insulating resin, an acrylic insulating resin, or a phenol insulating resin. As the solvent for the creaming, a known organic solvent such as Butyl carbitol (Butyl carbitol), Butyl carbitol acetate (Butyl carbitol acetate), ethylene glycol monobutyl ether (Butyl cellosolve), methyl isobutyl ketone (methyl isobutyl ketone), toluene (toluene), or xylene (xylene) can be used.

The metallization layer 121 and the insulating layer 122 are obtained by applying a conductive paste containing a metal component composed of a high-melting-point metal component 124 as metal particles and a low-melting-point metal component 123 as metal particles, and an insulating resin 122, as shown in fig. 5, on the substrate 11 in a predetermined pattern by a screen printing technique, and performing a heat treatment. Therefore, the preparation of a copper clad substrate, a resist coating step, and a photolithography step, which have been conventionally necessary, are not required, and significant effects of cost reduction and mass productivity improvement can be obtained.

In the heat treatment, it is preferable to heat the alloy at a temperature higher than the melting point of the low-melting-point metal component 123 and lower than the melting point of the high-melting-point metal component 124, for example, 100 to 300 ℃. By this heat treatment, the low melting point metal component 123 is dissolved, the high melting point metal component 124 and the low melting point metal component 123 are aggregated, a filled structure in which the high melting point metal components 124 are filled with the dissolved low melting point metal component 123 is obtained, and diffusion bonding (intermetallic bonding) is caused between the low melting point metal component 123 and the high melting point metal component 124. By this diffusion bonding, the metallization layer 121 containing no insulating resin is formed. The metallization layer 121 sinks more to the lower side than the insulating resin layer 122 due to its difference in specific gravity. In this way, the metallized wiring 12 having a 2-layer structure is formed, and the outer surface (front surface and side surfaces) of the metallized layer 121 attached to the substrate 11 is covered with the protective film 122 made of an insulating resin in the metallized wiring 12 having a 2-layer structure. Since the insulating layer 122 constitutes the protective film 122 covering the outer surface (surface, side surface) of the metallization layer 121, a separate step for applying the protective film 122 is not required.

In addition, even when Ag is used as the high-melting-point metal component, diffusion bonding occurs between Ag and the low-melting-point metal component in the metallization layer 121, and further, the insulation layer 122 covers the metallization layer 121 in the entire conductive composition. With this structure, migration of Ag can be reliably prevented. Similarly, when Cu is used as the high melting point metal component, diffusion bonding is caused between Cu and the low melting point metal component, and further, the metallization layer 121 is covered with the insulating layer 122, so that oxidation of Cu is prevented.

As another example of the conductive paste, as shown in fig. 7, a structure may be employed in which metal particles having surfaces of high-melting metal particles 124 are covered with a low-melting metal film 123, or conversely, a structure may be employed in which metal particles having surfaces of low-melting metal particles are covered with a high-melting metal film.

As shown in fig. 8 and 9, the metallization line 12 made of the high melting point metal component and the low melting point metal component may be formed on a metal film 125 such as a Cu film. When the metallization layer 121 composed of the high melting point metal component and the low melting point metal component is formed on the Cu film 125(Cu foil), the cross-sectional area of the entire metallization line 12 can be increased and the electrical resistance can be reduced while the thickness of the Cu film 125 is kept constant. Alternatively, by making the thickness of the Cu film 125 thin and making the metallization layer 121 composed of a high melting point metal component and a low melting point metal component attached thereto thick, the cross-sectional area of the entire metallization line 12 can be increased, and the electrical resistance can be reduced.

Fig. 10 is a photograph of a cross-section of a metallized wiring 12 of the present invention. The metallization line 12 is classified into 2 layers of Sn, Bi, and Ag, which are an insulating layer 122 and a metallization layer 121, and the insulating layer 122 covers the surface of the metallization layer 121. As can be seen from fig. 10, the metallization layer 121 has no gaps, disconnections, or the like.

Fig. 11 is a photograph of a cross section of a wiring in a comparative example obtained using a conductive paste composed of silver particles and an epoxy insulating resin. As can be seen from the sectional photograph, the silver particles were present alone without their surfaces being covered. In addition, the broken line portion can be seen.

Further, in the metallized wiring 12 of the present invention, as shown in fig. 10, since it is divided into 2 layers of the insulating resin layer and the metallized layer 121, the insulating resin layer covers the surface of the insulating layer 122. In contrast, in the comparative example, as shown in the cross-sectional photograph of fig. 11, it is understood that: the silver particles exist alone without their surfaces being covered, causing silver migration. The dark portion appearing in the middle portion of fig. 11 indicates a broken line portion resulting from silver migration.

Next, strength tests were performed to determine whether or not disconnection occurred after bending several times with respect to the PET film having the metalized wiring of the present invention and the PET film having the silver wiring of the comparative example described above. The experimental conditions of the applied load, the thickness of the coating, room temperature, and the like were the same.

The PET film having the silver wiring of the comparative example caused disconnection by about 50 times of bending operation, whereas the PET film having the metalized wiring of the present invention started to cause disconnection by more than 5000 times of bending.

All electrical products to which the electronic engineering technology is applied can be included in the electronic device of the present invention. Examples of typical examples include computers, mobile information devices, computer peripheral terminal devices, OA devices, communication devices, business information terminals, automatic identification devices, automotive electronics, industrial machinery, entertainment equipment, audio equipment, video equipment, and home electric equipment. Specific examples thereof include, but are not limited to, liquid crystal displays, personal computers, car navigation systems, cellular phones, laminated electronic devices, solar cells, solar power generation devices, light emitting diodes, light emitting devices, lighting devices, signal lamps, game machines, digital cameras, televisions, DVD players, electronic manuals, electronic dictionaries, hard disk recorders, Personal Digital Assistants (PDAs), video cameras, printers, plasma displays, and radios. For reasons of space limitation, a computer, a mobile phone, a stacked electronic device, a solar battery, a solar power generation device, a light emitting diode, a light emitting device, a lighting device, a signal lamp, and a liquid crystal display will be described as examples of the above-described electronic devices.

< personal computer >

Most personal computers, for example, as shown in fig. 12, have the following basic structure: a CPU (central processing Unit) 141 and a main memory 143 such as a DRAM are used as a center, and a hard disk controller 146, a graphics controller 145, and the like are added thereto. The respective components are connected by a CPU bus 12B1, a memory bus 12B2, internal buses 12B3, 12B4, and the like as communication paths, and these buses 12B1 to 12B4 are combined by a chipset 144. The CPU141 includes a part (cache memory) 142 of a memory function in most cases, and the main memory 143 holds information of data and programs. Further, the peripheral device 4 includes an input device 43 (a keyboard, a mouse, a scanner, and the like), an output device 41 (a liquid crystal display, a speaker, and the like), a secondary storage device (a hard disk drive, and the like) 42, and a communication device (a modem, a network interface, and the like).

The metallization wiring of the present invention can be applied to the wiring 12A between each of the components 141 to 146, 4 and the buses 12B1 to 12B4, in addition to the CPU bus 12B1, the memory bus 12B2, and the internal buses 12B3 and 12B 4. That is, when the wirings 12A between the bus lines 12B1 to 12B4, the structural portions 141 to 146, and 4, and the bus lines 12B1 to 12B4 are formed on a board (substrate), these wirings are used as the metallization wirings of the present invention. The metallization wiring includes a metallization layer 121 and an insulating layer 122 as shown in fig. 2 to 4. The metallization layer 121 includes a high-melting-point metal component and a low-melting-point metal component, and the high-melting-point metal component and the low-melting-point metal component are diffusion-bonded to each other to form a continuous series of layers. The insulating layer 122 is formed simultaneously with the metallization layer 121, and constitutes a protective film covering the outer surface of the metallization layer 121. The same applies to the wiring 12A between each component and the bus lines 12B 1-12B 4.

Thus, a personal computer having high-quality and high-reliability bus lines 12B1 to 12B4 and wiring 12A which are excellent in conductivity, electrochemical stability, oxidation resistance, filling property, fineness, mechanical strength and physical strength, and have high adhesion to a substrate can be obtained.

< Mobile telephone >

Next, as shown in fig. 13, for example, the mobile phone includes an antenna 154, a front-end module 141, a power amplifier circuit 142, a transceiver IC140, a digital baseband 147, and the like. The transceiver IC includes a transmission circuit 143, a reception circuit 148, an analog circuit 145 that performs baseband processing, an input/output interface I/O146, and the like. The analog circuit 145 includes an a/D conversion circuit 151, a D/a conversion circuit 152, and the like.

The metallized wiring of the present invention can be applied to the wiring 12A between the antenna 154, the front-end module 141, the power amplifier circuit 142, the transceiver IC140, and the digital baseband 147, and can also be applied to the internal wiring of each of the components 141 to 154.

Thus, the wiring 12A and the internal wiring having excellent conductivity, electrochemical stability, oxidation resistance, filling property, fineness, mechanical strength and physical strength, high adhesion to the substrate, high quality and high reliability can be obtained.

< laminated electronic device >

Next, referring to fig. 14, a laminated electronic device in which the first chip component 14A, the second chip component 14B, and the third chip component 14C are laminated is illustrated. The first chip component 14A and the third chip component 14C are, for example, chips of the main memory 143 and logic IC chips connected thereto in a computer shown in fig. 12. The 2 nd chip component 14B is, for example, an interposer (interposer), and a predetermined wiring is formed between the first chip component 14A constituting the main memory chip and the third chip component 14C constituting the logic IC chip. Between the second chip component 14B and the third chip component 14C, and between the second chip component 14B and the first chip component 14A, metallization wiring 12 having a predetermined pattern is formed.

The metallization line 12 relates to the invention and comprises a metallization layer 121 and an insulating layer 122. The metallization layer 121 includes a high-melting-point metal component and a low-melting-point metal component, and the high-melting-point metal component and the low-melting-point metal component are diffusion-bonded to each other to form a series of continuous metallization layers 121. The insulating layer 122 is made of an insulating resin, is formed simultaneously with the metallization layer 121, and constitutes a protective film covering the outer surface of the metallization layer 121.

Thus, a laminated electronic device having a high-quality and highly reliable metallized wiring 12 which is excellent in conductivity, electrochemical stability, oxygen resistance, filling property, fineness, mechanical strength, and physical strength, and has high adhesion to substrates can be obtained.

In order to obtain the three-dimensional laminated electronic device shown in fig. 14, as shown in fig. 15, the conductive paste 12 of the present invention is applied to one surface or both surfaces of the second chip component 14B, and heat treatment is performed after the application. The conductive paste 12 contains a high-melting-point metal component and a low-melting-point metal component, and therefore is heated at a temperature higher than the melting point of the low-melting-point metal component and lower than the melting point of the high-melting-point metal component, for example, 100 to 300 ℃. By this heat treatment, the low melting point metal component is melted. Thereby, the high-melting-point metal component and the low-melting-point metal component are aggregated, the high-melting-point metal component is filled with the melted low-melting-point metal component to form a filled structure, and diffusion bonding is caused between the low-melting-point metal component and the high-melting-point metal component.

The low-melting-point metal component and the high-melting-point metal component are condensed toward the terminal electrode 13 of the first chip component 14A and the terminal electrode 125 of the 2 nd chip component 14B, and the terminal electrode 13 of the second chip component 14B and the terminal electrode 125 of the third chip component 14C, thereby forming a metallized layer 121 connecting the terminal electrode 13 of the first chip component 14A and the terminal electrode 125 of the second chip component 14B, and a metallized layer 121 connecting the terminal electrode 13 of the second chip component 14B and the terminal electrode 125 of the third chip component 14C. The outer surface (surface and side surfaces) of the metallization layer 121 is covered with a protective layer 122 made of an insulating resin.

When the second chip component 14B is an interposer, a structure in which Through-electrodes are formed in the thickness direction by using a so-called TSV (Through silicon Via) technique is preferable. Thus, a three-dimensional circuit arrangement structure is realized, and a method different from the miniaturization of the line width can contribute to an increase in capacity, an increase in transmission speed, and an improvement in high-frequency characteristics.

In the implementation of the TSV structure, the vertical conductor serving as the center is preferably a molten and solidified conductor formed by a molten metal filling method. In order to form a vertical conductor (through electrode) made of a molten solidified material by a molten metal filling method, for example, a molten metal is filled into a fine hole formed in a substrate in advance, and the filled molten metal is cooled and hardened in a state where pressing (press), injection pressure, or rolling using a pressing plate is applied to the filled molten metal. By this molten metal filling method, a high-quality vertical conductor (through electrode) free from voids and the like can be formed in a very short time as compared with plating and the like. Therefore, a high-quality three-dimensional electronic device is realized in which a capacity is increased, a transmission speed is increased, and high-frequency characteristics are improved by a method different from the miniaturization of a line width.

In another embodiment, the electronic components 141 to 146 such as memories and logic ICs may be three-dimensionally structured by using the TSV technology. In the cellular phone shown in fig. 13, the TSV technology may be used for the main components.

< solar cell >

Referring to fig. 16 and 17, p is provided on the back surface (opposite to the light incident surface) of the silicon substrate 11⁺Semiconductor layers 14P and n⁺The electrical connection of the semiconductor layer 14n is performed by removing the passivation film 126 formed on the back surface of the silicon substrate 11 in a desired pattern shape, and p is provided corresponding to the removed portion of the passivation film 126⁺A P-electrode contact 15P is formed on the semiconductor layer 14P, and n⁺An n-electrode contact 15p is formed on the semiconductor layer 14 n. Further, an n-metallization wiring 12n is formed on the passivation film 126 and the n-electrode tab 15n, and a p-metallization wiring 12p is formed on the passivation film 126 and the p-electrode tab 15 p. The P metallization wiring 12P and the n metallization wiring 12n are electrodes that collect electric current generated mainly in the solar cell unit, and they are formed as InterDigital (inter digital) electrodes. When a plurality of solar cells are arranged on one silicon substrate 11, one of p-metallization wiring 12p and n-metallization wiring 12n can serve as a bus electrode for connecting the solar cells.

Here, the p-metallization wiring 12p includes a metallization layer 121p and an insulating layer 122 p. The metallization layer 121p contains a high melting point metal component and a low melting point metal component. The high-melting-point metal component and the low-melting-point metal component are diffusion bonded to each other. The insulating layer 122p is formed simultaneously with the metallization layer 121p, and constitutes a protective film covering the outer surface of the metallization layer 121 p.

The n-metallization line 12n similarly includes a metallization layer 121n and an insulating layer 122 n. The metallization layer 121n contains a high melting point metal component and a low melting point metal component. The high-melting-point metal component and the low-melting-point metal component are diffusion-bonded to each other to form the metallized layer 121 n. The insulating layer 122n is formed simultaneously with the metallization layer 121n, and constitutes a protective film covering the outer surface of the metallization layer 121 n. The formation method is as described above.

Next, referring to fig. 18, n is formed on passivation film 126 provided on one surface of silicon substrate 11⁺N-electrode contact 15n electrically connected to semiconductor layer 14n, and p⁺And a P-electrode contact 15P electrically connected to the semiconductor layer 14P. On the n-electrode tab 15n and the passivation film 126, an n-metalized wiring 12n is formed, and further, a p-metalized wiring 12p is formed so as to cover the surface of the n-metalized wiring 12n and be exposed to the surface of the p-electrode tab 15 p.

The metallization layer 121n of the n-metallization wiring 12n contains a high-melting-point metal component and a low-melting-point metal component, and the high-melting-point metal component and the low-melting-point metal component are diffusion-bonded to each other. The insulating layer 122n is formed simultaneously with the metallization layer 121n, covering the outer face of the metallization layer 121 n. The metallization layer 121n is connected to the n-electrode contact 15 n.

The metallization layer 121P of the P metallization wiring 12P contains a high melting point metal component and a low melting point metal component, and the high melting point metal component and the low melting point metal component are diffusion bonded to each other. The insulating layer 122p is formed simultaneously with the metallization layer 121p, and constitutes a protective film covering the outer surface of the metallization layer 121 p. The metallization layer 121p is connected to the p-electrode contact 15 p. An antireflection film 129 is attached to the solar light incidence surface of the substrate 11.

According to the above configuration, it is understood that the solar cell having the metallization layers 121p and 121n which are excellent in conductivity, electrochemical stability, oxidation resistance, filling property, fineness, mechanical strength, and physical strength, and which have high adhesion and adhesion to the substrate, and which have high quality and high reliability can be obtained. Further, the present invention is extremely useful in that even when the solar cell is installed in a place with a severe natural environment such as desert, the solar cell can withstand a large temperature change and can operate stably for a long period of time.

The metallization wiring of the present invention is applicable not only to the illustrated solar cell but also to other types of solar cells. For example, the transparent electrode is formed in a solar cell having a transparent electrode such as ITO on the side of sunlight incidence, or the electrode is formed in a dye-sensitized solar cell.

< solar Power Generation device >

Referring to fig. 19, a solar power generation device 6 using a solar cell is illustrated. The illustrated solar power generator converts dc power output from the solar battery 61 into ac power by the power conversion device 62, supplies the converted ac power to the load 65 via the power distribution device 63, and sells surplus power to the commercial ac system 7. The power conversion device 62 and the power distribution device 63 are controlled by a control device 64. The solar cell 61 is a collection of a plurality of solar cells shown in fig. 16 to 18.

< light emitting diode >

Next, referring to fig. 20, a light emitting diode of the present invention is illustrated. The light emitting diode illustrated in fig. 20 includes a light emitting element 14, an n-metalized wiring (1 st metalized wiring) 12n, and a p-metalized wiring (2 nd metalized wiring) 12 p. The light-emitting element 14 is stacked on the transparent crystal substrate 161. The transparent crystal substrate 161 is made of sapphire or the like, and has a light emitting surface as a front surface, and the light emitting element 14 is laminated on the other surface of the transparent crystal substrate 2 opposite to the light emitting surface.

The light emitting element 14 has a structure in which an n-type semiconductor layer 14n is formed on a buffer layer 162 laminated on a transparent crystal substrate 161, and a p-type semiconductor layer 14p is laminated on the n-type semiconductor layer 14n through an active layer 14 a. The n-type semiconductor layer 14n on the transparent crystalline substrate 161 side has a portion 164 not overlapping with the P-type semiconductor layer 14P, and the level difference of the portion 164 is filled with the metal conductive layer 165.

n-metallization line 12n is connected to n-type semiconductor layer 14n, and p-metallization line 12p is connected to p-type semiconductor layer 14 p. The n-metallization wiring 12n includes a metallization layer 121n and an insulating layer 122n, and the metallization layer 121n is bonded to the surface of the metal conductive layer 165. The metallization layer 121p of the p-metallization line 12p is provided on the same surface as the n-metallization line 12n, and is connected to the p-type semiconductor layer 14p via the reflective film 163.

The metallization layers 121n and 121p are connected to the 1 st and 2 nd through-electrodes 17NT and 17PT penetrating the support substrate 11 and the insulating layers 122n and 122 p.

The n-metallized wiring 12n is formed simultaneously using the same conductive paste containing an insulating resin and a metal component. The metal component includes a high-melting-point metal component and a low-melting-point metal component, and the high-melting-point metal component and the low-melting-point metal component are diffusion-bonded to each other to form the metallization layer 121 n. The insulating layer 122n is made of an insulating resin and covers the outer surface of the metallization layer 121 n. The metallization layer 121n is connected to the n-electrode contact 15 n.

The P metallization wiring 12P is also formed simultaneously using the same conductive paste containing an insulating resin and a metal component. The metal component includes a high-melting-point metal component and a low-melting-point metal component, and the high-melting-point metal component 124 and the low-melting-point metal component 123 are diffusion-bonded to each other to form the metallization layer 121 p. The insulating layer 122p is made of an insulating resin and constitutes a protective film covering the outer surface of the metallization layer 121 p.

With the above configuration, it is apparent that a light emitting diode having high-quality and high-reliability metallization layers 121p and 121n which are excellent in conductivity, electrochemical stability, oxidation resistance, filling property, fineness, mechanical strength, and physical strength, and which have high adhesion and adhesive force to a substrate can be obtained.

In addition, the metallization wiring of the present invention is applicable not only to the illustrated light emitting diode but also to other types of light emitting diodes. For example, a case where a transparent electrode is formed in a light emitting diode cell having a transparent electrode such as ITO on the light emitting side.

< light emitting device, lighting device, or signal lamp >

Referring to fig. 21, a light-emitting device having m light-emitting diodes LED1 to LEDm is illustrated. As shown in fig. 20, the light emitting diodes LEDs 1 to LEDm include a light emitting element 14, an n-metalized wiring (1 st metalized wiring) 12n, and a p-metalized wiring (2 nd metalized wiring) 12 p. The specific structure of the light emitting diodes LED1 to LEDm is as described in detail with reference to fig. 20. The light emitting diodes LEDs 1 to LEDm may be arranged in a single row or a plurality of rows. The substrate may be shared by the light emitting diodes LEDs 1 to LEDm. Further, R, G, B light emitting diodes may be arranged, or a configuration in which light emitting diodes of monochromatic light are arranged may be employed.

The light-emitting device shown in fig. 21 can be used as a lighting device and also as a traffic signal light. As is apparent from the above description, these light-emitting devices, lighting devices, and signal lamps have high quality and high reliability.

< liquid Crystal display >

Fig. 22 is a view showing a liquid crystal display, and is a structure in which the liquid crystal panel 8 and the backlight 9 are combined. The backlight 9 has a structure in which m light emitting diodes LEDs 1 to LEDm shown in fig. 20 are arranged in a row. As is apparent from the above description, the liquid crystal display is a high-quality and highly reliable device.

Although the invention has been described and illustrated in detail with respect to the above embodiments, it is to be understood that modifications and variations may be made by those skilled in the art without departing from the spirit, scope and teaching of the invention.

Description of the symbols

11 substrate

12 metallization wiring

121 metallization layer

122 insulating layer

14 electronic component

Claims

1. An electronic device includes a substrate and an electronic component,

the substrate has metallization wiring;

the metallization wiring comprises a metallization layer and an insulating layer;

the metallized layer contains a high-melting-point metal component and a low-melting-point metal component, the high-melting-point metal component and the low-melting-point metal component are diffusion bonded to each other,

the insulating layer is formed simultaneously with the metallization layer and covers the outer surface of the metallization layer;

the electronic component is electrically connected to the metallization layer.

2. The electronic device as set forth in claim 1,

the refractory metal component contains at least 1 selected from the group consisting of Ag, Cu, Au, Pt, Ti, Zn, A1, Fe, Si and Ni;

the low-melting-point metal component contains at least 1 selected from the group consisting of Sn, In, Bi, and Ga.

3. The electronic device as set forth in claim 1,

the metallization layer comprises carbon nanotubes.

4. The electronic device as set forth in claim 1,

the metallization wiring is formed on a metal film, and the metallization layer is attached to the metal film.

5. The electronic device as set forth in claim 1,

the electronic device is at least one selected from the group consisting of a computer, a peripheral terminal device of a computer, an OA device, a communication device, a business information terminal and automatic identification device, an automotive electronic device, an industrial machine, and a home electric device.

6. An electronic component is formed by laminating a plurality of chip components,

the plurality of chip components are bonded by metallization wiring;

the metallization layer contains a high-melting-point metal component and a low-melting-point metal component, and the high-melting-point metal component and the low-melting-point metal component are diffusion-bonded to each other;

the terminal electrode of the chip component is electrically connected to the metallization layer.

7. The electronic component according to claim 6,

8. The electronic component according to claim 6,

the metallization layer comprises carbon nanotubes.

9. A solar cell includes a semiconductor substrate, a1 st metallization line and a 2 nd metallization line,

the semiconductor substrate has an n-type semiconductor layer and a p-type semiconductor layer;

the 1 st metallization line is connected to the n-type semiconductor layer;

the 2 nd metallization wiring is connected to the p-type semiconductor layer;

the 1 st metallization line includes a metallization layer and an insulating layer, and the 2 nd metallization line includes a metallization layer and an insulating layer;

the metallization layer contains a high-melting-point metal component and a low-melting-point metal component, and the high-melting-point metal component and the low-melting-point metal component are diffusion bonded to each other;

the insulating layer is formed simultaneously with the metallization layer and covers the outer surface of the metallization layer.

10. The solar cell according to claim 9, wherein the first and second electrodes are arranged in a matrix,

11. The solar cell according to claim 9, wherein the first and second electrodes are arranged in a matrix,

the metallization layer comprises carbon nanotubes.

12. A solar power generation device comprises a solar cell,

the solar cell comprises a semiconductor substrate, a1 st metallization wiring and a 2 nd metallization wiring;

the 1 st metallization line is connected to the n-type semiconductor layer;

the 2 nd metallization wiring is connected to the p-type semiconductor layer;

13. The solar power generation device according to claim 12,

14. The solar power generation device according to claim 12,

the metallization layer comprises carbon nanotubes.

15. A light emitting diode includes a light emitting element, a1 st metallization wiring and a 2 nd metallization wiring,

the light-emitting element includes a structure in which an n-type semiconductor layer and a p-type semiconductor layer are stacked;

the 1 st metallization line is connected to the n-type semiconductor layer;

the 2 nd metallization wiring is connected to the p-type semiconductor layer;

16. The light-emitting diode according to claim 15,

17. The light-emitting diode according to claim 15,

the metallization layer comprises carbon nanotubes.

18. A light-emitting device has a light-emitting diode,

the light emitting diode comprises a light emitting element, a1 st metallization wiring and a 2 nd metallization wiring;

the 1 st metallization line is connected to the n-type semiconductor layer;

the 2 nd metallization wiring is connected to the p-type semiconductor layer;

19. The light-emitting device according to claim 18,

20. The light-emitting device according to claim 18,

the metallization layer comprises carbon nanotubes.

21. A lighting device is provided with a light-emitting diode,

the 1 st metallization line is connected to the n-type semiconductor layer;

the 2 nd metallization wiring is connected to the p-type semiconductor layer;

22. The lighting device according to claim 21,

23. The lighting device according to claim 21,

the metallization layer comprises carbon nanotubes.

24. A signal lamp has a light-emitting diode,

the light emitting diode includes a light emitting element, a1 st metallization wiring and a 2 nd metallization wiring,

the 1 st metallization line is connected to the n-type semiconductor layer;

the 2 nd metallization wiring is connected to the p-type semiconductor layer;

25. The signal lamp according to claim 24, wherein,

26. The signal lamp according to claim 24, wherein,

the metallization layer comprises carbon nanotubes.

27. A liquid crystal display includes a liquid crystal panel and a backlight,

the backlight lamp irradiates the liquid crystal panel and is formed by arranging a plurality of light emitting diodes;

the 1 st metallization line is connected to the n-type semiconductor layer;

the 2 nd metallization wiring is connected to the p-type semiconductor layer;

28. The liquid crystal display of claim 27,

29. The liquid crystal display of claim 27,

the metallization layer comprises carbon nanotubes.