HK1154118B - Substrate heating apparatus, liquid material applying apparatus provided with substrate heating apparatus, and substrate heating method - Google Patents

Description

Substrate heating device, liquid material coating device provided with same, and substrate heating method

Technical Field

The present invention relates to a substrate heating apparatus that heats a substrate coated with a liquid material, a coating apparatus including the same, and a substrate heating method. More particularly, the present invention relates to a substrate heating apparatus, a coating apparatus including the same, and a substrate heating method, which do not damage a substrate and a chip mounted thereon until the underfill process is completed in the underfill process of a semiconductor package.

In this specification, a substrate on which a workpiece such as a semiconductor chip is mounted may be referred to as a substrate.

Background

As a mounting technique of a semiconductor chip, there is a technique called a flip chip (flip chip) method. In the flip chip method, a projection-like electrode is formed on the surface of the semiconductor chip 1 and is directly connected to an electrode pad on the substrate 2.

In the flip chip package, in order to prevent the connection portion 3 from being broken by concentration of stress generated by a difference in thermal expansion coefficient between the semiconductor chip 1 and the substrate 2 to the connection portion 3, a resin 4 is filled in a gap between the semiconductor chip 1 and the substrate 2 to reinforce the connection portion 3. This step is called underfill (see fig. 1).

The underfill step is performed by: a liquid resin 4 is applied along the outer periphery of the semiconductor chip 1, and after the resin 4 is filled into the gap between the semiconductor chip 1 and the substrate 2 by capillary action, the resin 4 is cured by heating in an oven or the like.

In recent years, the size and thickness of products have been further reduced, and with this development, the size and thickness of the semiconductor chip 1 and the substrate 2 themselves have been reduced in the flip chip system. If the semiconductor device is small and thin, heat is easily transferred to the semiconductor chip 1 and the substrate 2, and the semiconductor chip and the substrate are easily affected by the ambient temperature, and the connection portion 3 is easily broken by the stress generated thereby. Therefore, the viscosity of the resin is reduced for the purpose of surely performing the reinforcement in the underfill step, and the substrate is heated for the purpose of easy filling.

For example, patent document 1 discloses a substrate heating apparatus that heats a substrate by ejecting heated gas, the substrate heating apparatus including: a heating unit having a protruding portion protruding upward toward the bottom surface of the substrate, and having a gas flow path formed therein, one end of the gas flow path being communicated with the ejection hole opened in the upper surface of the protruding portion, and the other end of the gas flow path being communicated with the gas supply portion; a gas heating member that heats the gas flowing in the gas flow path; an opening/closing valve that opens or closes the inflow of gas into the gas flow path; and a valve control unit for heating the substrate to a target temperature by controlling the opening and closing of the opening and closing valve.

Further, patent document 2 discloses a method of mounting an electronic component, in which, in an underfill step, when resin is injected between an IC chip and a substrate, electricity is applied to the IC chip, and a heated heat plate is brought into contact with only the IC chip, or vibration is applied only to the IC chip, whereby the viscosity of the resin between the IC chip and the substrate is made lower than the viscosity of the resin at other portions.

Patent document 3 discloses a manufacturing apparatus for a semiconductor device, which includes an application stage (stage) on which a Tape Automated Bonding (TAB) Tape having a semiconductor chip mounted thereon is placed, and supplies resin between the semiconductor chip and the TAB Tape, and which is characterized by including a heating member for heating the semiconductor chip and the TAB Tape on the application stage.

Documents of the prior art

Patent document

Patent document 1: japanese patent laid-open No. 2006-314861

Patent document 2: japanese patent laid-open No. 2005-45284

Patent document 3: japanese patent laid-open No. 2007-227558

Disclosure of Invention

(problems to be solved by the invention)

As described in the above patent documents, there have been substrate heating apparatuses that heat a substrate only at the time of coating. However, within the scope of the applicant's knowledge, there is no apparatus for heating the substrate before and after the coating. That is, the conventional substrate heating apparatus has the following problems: since the coating and the transfer before and after the coating are not heated, the temperature change between the coating and the transfer becomes large, and the change in stress due to the difference in thermal expansion coefficient becomes large, so that the connection portion is easily broken.

Accordingly, an object of the present invention is to provide a substrate heating apparatus, a coating apparatus including the same, and a substrate heating method, which can reduce a temperature change of a substrate on which a semiconductor chip is mounted through before and after a coating operation and prevent a breakage of a connection portion.

(means for solving the problems)

A substrate heating apparatus according to claim 1 of the present invention is a substrate heating apparatus for heating a substrate which is conveyed in one direction from below and performs a coating operation on a workpiece placed thereon while being conveyed, the substrate heating apparatus including: a heating member having a flat upper surface that contacts the bottom surface of the substrate to heat the substrate, and a discharge opening that is formed in the upper surface and discharges a heating gas to the bottom surface of the substrate; and a lifting mechanism for lifting the heating member.

A substrate heating apparatus according to claim 2 is the substrate heating apparatus according to claim 1, wherein the heating member has a suction opening on an upper surface thereof for applying a suction force to a bottom surface of the substrate, the suction opening is adapted to apply the suction force from the upper surface of the heating member to the bottom surface of the substrate at an ascending position of the elevating mechanism, the upper surface of the heating member is brought into contact with the bottom surface of the substrate to heat the substrate, and the discharge opening is adapted to discharge a heated gas to heat the substrate at a descending position of the elevating mechanism.

In the substrate heating apparatus according to claim 3 of the present invention, in the aspect of the present invention 2, the ejection opening and the suction opening are formed by the same opening, and the opening is connected to a negative pressure source and a pressurization source via a switching valve.

The substrate heating apparatus according to claim 4 of the present invention is characterized in that, in any one of the aspects 1 to 3 of the present invention, the opening has a plurality of openings.

The substrate heating apparatus according to claim 5 is characterized in that, in any one of the aspects 1 to 4, the plurality of heating members are arranged in series in the substrate conveyance direction.

The substrate heating apparatus according to claim 6 of the present invention is characterized in that, in the substrate heating apparatus according to claim 5, the heating member is constituted by a plurality of types of heating blocks having different lengths.

The liquid material application apparatus according to claim 7 of the present invention is characterized by comprising: the substrate heating apparatus according to any one of aspects 1 to 6 of the present invention; a discharge device that discharges the liquid material; a drive mechanism for moving the discharge device relative to the substrate; a conveying mechanism for conveying the substrate in one direction; and a control unit for controlling the operations of these components.

In the liquid material application apparatus according to claim 8 of the present invention, in the 7 th aspect of the present invention, the control portion sets the elevation mechanism to an elevated position to bring an upper surface of the heating member into contact with a bottom surface of the substrate when performing the application operation on the workpiece disposed on the substrate, and sets the elevation mechanism to a lowered position to eject the heated gas from the ejection port when the substrate is conveyed.

A substrate heating method according to a 9 th aspect of the present invention is a substrate heating method for heating a substrate which is conveyed from below in one direction and on which a work piece placed thereon is coated while being conveyed, the substrate heating method including: a contact heating step of heating the substrate by bringing a flat upper surface of the heating member into contact with a bottom surface of the substrate by the elevating mechanism; and a non-contact heating step of separating the bottom surface of the substrate from the upper surface of the heating member by an elevating mechanism, and ejecting a heating gas from an ejection opening formed in the upper surface of the heating member.

The substrate heating method according to claim 10 of the present invention is characterized in that, in the contact heating step according to claim 9, a suction force is exerted from a suction opening formed in an upper surface of the heating member.

A substrate heating method according to claim 11 of the present invention is characterized in that, in the 10 th aspect of the present invention, the ejection opening and the suction opening are constituted by the same opening, and the opening is connected to a negative pressure source and a pressurization source via a switching valve; in the contact heating step, communicating the opening with a negative pressure source; in the non-contact heating step, the opening is brought into communication with a pressurized source.

The substrate heating method according to claim 12 is characterized in that, in any one of the 9 th to 11 th aspects of the present invention, the contact heating step is performed when a coating operation is performed on a workpiece disposed on the substrate, and the non-contact heating step is performed when the substrate is conveyed.

The substrate heating method according to claim 13 is characterized in that, in the substrate heating method according to claim 12, the non-contact heating step is performed before and after the coating operation.

The substrate heating method according to claim 14 of the present invention is characterized in that, in the invention according to claim 12 or 13, the coating operation is an underfill step.

The substrate heating method according to claim 15 of the present invention is characterized in that, in the 14 th aspect of the present invention, the entire bottom surface of the substrate is uniformly heated in the contact heating step and the non-contact heating step. By uniformly heating the entire bottom surface of the substrate, the connection portion can be more effectively protected.

The substrate heating apparatus of the present invention will be described below from other points of view.

The substrate heating apparatus of the present invention is a substrate heating apparatus that is disposed below a conveyance mechanism that conveys a substrate coated with a liquid material and heats the substrate, the substrate heating apparatus including: a flow path having one end communicated with the flow port and the other end communicated with a switching valve for switching communication with the negative pressure source and the pressurization source; a heating block having the flow port formed through a surface thereof facing the substrate and having the flow channel formed therein; a heater which is provided in the heating block, heats the heating block, and heats the gas in the flow path; the temperature sensor is arranged in the heating block and used for detecting the temperature of the heating block; a temperature control unit that controls the heater according to a signal from the temperature sensor; and a lifting mechanism for lifting and lowering the heating block between a lifting position for supporting the substrate by contacting from the bottom surface when the liquid material is applied and a lowering position for separating the substrate from the surface of the heating block facing the substrate when the substrate is conveyed.

Preferably, when the heating block is located at the raised position, the switching valve communicates with a negative pressure source to suck gas from the flow port, the substrate supported from the bottom surface is adsorbed by the heating block, and the heating block is brought into contact with the substrate to heat the substrate. Here, it is more preferable that a plurality of the communication ports are formed in the heating block, and a plurality of the flow paths are provided therein.

Preferably, the flow path is divided into a first flow path and a second flow path, wherein one end of the first flow path is communicated with the first flow port, the other end of the first flow path is communicated with a first valve that switches communication with the negative pressure source, one end of the second flow path is communicated with the second flow port, the other end of the second flow path is communicated with a second valve that switches communication with the pressurization source, and the first flow port and the second flow port are bored in a surface of the heating block facing the substrate, and the first flow path and the second flow path are provided therein. Here, it is more preferable that the heating block is communicated with a negative pressure source through the first valve when the heating block is located at the raised position, and sucks the gas from the first circulation port, adsorbs the substrate supported from the bottom surface to the heating block, and brings the heating block into contact with the substrate, thereby heating the substrate, and is communicated with a pressurizing source through the second valve when the heating block is located at the lowered position, and ejects the gas in the second flow path heated by the heater from the second circulation port toward the bottom surface of the substrate located at a position separated from the heating block, thereby heating the substrate. Here, it is more preferable that the heating block is provided with a plurality of the first and second ports, and a plurality of the first and second flow paths are provided therein.

When the coating apparatus of the present invention is described from other points of view, it is as follows.

The coating device of the present invention is characterized by comprising: any one of the substrate heating devices; a discharge device for discharging the liquid material; a drive mechanism for moving the discharge device relative to the substrate; a conveying mechanism which is arranged in the coating device in an extending way and conveys the substrate; and a control unit for controlling the operations of these components. Preferably, the conveying mechanism is divided into a plurality of sections, and the substrate heating devices are provided in a plurality of sections of the conveying mechanism.

(Effect of the invention)

According to the present invention, since heating is performed not only at the time of coating but also at the time of transporting before and after, for example, in the underfill step, the temperature change of the substrate on which the semiconductor chip is mounted is extremely small, and the breakage of the connection portion can be prevented.

Further, since the temperature change of the substrate can be made extremely small during the coating operation, the state of the liquid material is stable, and the coating can be performed stably.

Further, since two different heating methods can be performed by one heating means, one heating means can be used for both the coating and non-coating (during conveyance). Therefore, miniaturization of the device can be achieved.

Drawings

Fig. 1 is an explanatory diagram illustrating an underfill step.

Fig. 2 is a schematic perspective view of the heating mechanism of the present invention.

Fig. 3 is a sectional view of an essential part of the heating mechanism of the present invention.

Fig. 4 is a block diagram of the heating mechanism of the present invention.

Fig. 5 is an explanatory view for explaining a heating state at a rising position of the heating block according to the present invention.

Fig. 6 is an explanatory view for explaining a heating pattern at a descending position of the heating block according to the present invention.

Fig. 7 is a schematic perspective view of the coating apparatus of example 1.

Fig. 8 is an explanatory view for explaining the conveying mechanism of the coating apparatus of example 1.

Fig. 9 is a flowchart showing an operation flow of the coating apparatus of example 1.

Fig. 10 is a flowchart showing an operation flow of the coating apparatus of example 1.

Fig. 11 is a flowchart showing an operation flow of the coating apparatus of example 1.

Fig. 12 is a flowchart showing an operation flow of the coating apparatus of example 1.

Fig. 13 is a sectional view of an essential part of the heating mechanism of embodiment 2.

Fig. 14 is a block diagram of the heating mechanism of embodiment 2.

Description of the symbols

1 workpiece (semiconductor chip)

2 base plate

3 connecting part (projecting electrode, electrode pad)

4 liquid resin and liquid Material

11 heating block

12 opposite to the substrate (upper surface)

13 first circulation port (opening for suction)

14 second circulation port (opening for ejection)

15 first flow path

16 second flow path

17 first valve

18 second valve

19 negative pressure source

20 pressurized source

21 heating device

22 temperature sensor

23 temperature control part

24 lifting mechanism

25 piping joint

26 flow of inhaled gas

27 of the gas jet

101 coating device

102 discharge device

103 XYZ driving mechanism

104 conveying mechanism

105 substrate heating mechanism

106 substrate pressing member

107 storage container

108 nozzle

109 rail-like member

110 roller

111 conveyor belt

112 substrate conveying direction

113 driving direction

114 left side conveying unit

115 central transport unit

116 right side conveying unit

118 left auxiliary heating unit (carry-in port table)

119 central auxiliary heating unit (middle platform)

120 Right auxiliary heating unit (moving outlet table)

121 left side heating unit (front stage)

122 central heating unit (coating table)

123 Right heating unit (background)

124 control part

201 heating block

202 opposite to the substrate (upper surface)

203 flow port

204 flow path

205 switching valve

206 negative pressure source

207 pressurized source

208 temperature control part

209 gas flow.

Detailed Description

One embodiment for carrying out the present invention will be described by taking as an example a case where an underfill step is performed on a substrate on which semiconductor chips are arranged.

[ heating mechanism body ]

Fig. 2 is a schematic perspective view of the substrate heating mechanism 105 according to the present invention. Fig. 3 and 4 respectively show a sectional view of a main part and a frame line diagram.

The heating block 11, which is a main part of the heating means 105 of the present embodiment, has a substantially rectangular parallelepiped shape, and the upper surface 12 facing the substrate is a surface having substantially the same size as the substrate 2 and a substantially narrow width.

On the upper surface 12, a plurality of first communication ports 13 and a plurality of second communication ports 14 are arranged at regular intervals. Here, the arrangement of the flow ports 13 and 14 shown in fig. 2 is merely an example, and this arrangement may be changed as appropriate, but in the embodiment of the present embodiment, the arrangement is made uniform so that there is no temperature difference over the entire bottom surface of the substrate 2 from the viewpoint of protecting the connection portion.

The plurality of first flow ports 13 are suction openings and communicate with a plurality of first flow paths 15 provided in the heating block 11. The second flow ports 14 are discharge openings, and communicate with the second flow paths 16 provided in the heating block 11. The plurality of first flow paths 15 communicate with a negative pressure source 19 via a first valve 17, and the plurality of second flow paths 16 communicate with a pressurization source 20 via a second valve 18. By opening and closing the first valve 17 and the second valve 18, the gas in the flow paths (15, 16) can be sucked in or the gas can be discharged into the flow paths. Here, the first valve 17 and the second valve 18 are preferably provided at different positions from the heating block 11. The first valve 17 and the second valve 18 may be provided in plural numbers according to the strengths of the negative pressure source 19 and the pressurization source 20. Air flows through the channels (15, 16) as a working gas, but the present invention is not limited to this, and for example, if an inert gas is preferred, nitrogen gas or the like may be used.

The heater 21 is provided inside the heating block 11, and heats the gas in the heating block 11 and the second flow path 16. In the present embodiment, an electrothermal heater is used as the heater 21, but the present invention is not limited to this, and a peltier device (peltier device) or the like may be used, for example. The number of heaters to be provided is not limited, and the arrangement thereof may be appropriately changed, but from the viewpoint of protecting the connection portion, it is preferable to adopt the number and arrangement such that a temperature difference does not occur over the entire bottom surface of the substrate 2.

In addition, a temperature sensor 22 is provided inside the heating block 11 in cooperation with the heater 21. The heater 21 and the temperature sensor 22 are connected to a temperature control unit 23, and the temperature control unit 23 controls the heater 21 so that the temperature thereof is constant in accordance with a signal from the temperature sensor 22. The control method is not particularly limited, and PID (Proportional, Integral, Derivative) control, general feedback control, simple on/off control, and the like, which are generally used in temperature control, may be used. The arrangement and number of the temperature sensors 22 may be changed as appropriate.

The substrate 2 is conveyed in one direction by the conveyance mechanism 104. The conveying mechanism 104 includes two rail-shaped members 109, and a heating mechanism 105 is disposed therebetween. The heating block 11, which is a main part of the heating mechanism 105, is mounted on the elevating mechanism 24 (see fig. 2). The elevating mechanism 24 has an ascending position for supporting the substrate 2 positioned above the heating block 11 from the bottom surface and a descending position for separating the heating block 11 from the substrate 2. In the raised position, the substrate 2 is held and fixed by the hook-shaped substrate pressing member 106 and the upper surface 12 of the heating block.

As a device for driving the elevating mechanism 24, for example, a cylinder for driving a piston by compressing gas, a device in which a motor and a ball screw are combined, or the like can be used. When the liquid material 4 is applied, the heating block 11 moves to the raised position to support the substrate 2 from the bottom surface, thereby functioning as an application table. On the other hand, when the substrate is transferred, the heating block 11 moves to a lowered position away from the substrate 2 so that the substrate transfer is performed smoothly. In order to efficiently maintain the temperature of the substrate by the heating gas, the distance between the upper surface 12 of the heating block and the bottom surface of the substrate 2 is preferably not too far apart, for example, several mm. Details of the conveying mechanism 104 will be described in the embodiment.

[ heating conditions ]

The heating mode of the heating means 105 of the present invention is roughly divided into two types according to the position of the heating block 11.

[1] Heating at the raised position (FIG. 5)

When the heating block 11 is in the raised position, the first valve 17 communicates the first flow path 15 in the heating block 11 with the negative pressure source 19. Thereby, gas is sucked from the first flow passage 15 and the first communication port 13 communicating with each other at the other end in the heating block 11 (see an arrow denoted by reference numeral 26). The substrate 2 is present immediately above the first circulation port 13, and the upper surface 12 of the heating block is brought into close contact with the bottom surface of the substrate 2 by sucking the substrate 2 by the suction from the first circulation port 13. In this way, the bottom surface of the substrate 2 comes into contact with the heating block upper surface 12, so that heat from the heater 21 is directly and rapidly conducted via the heating block 11. The temperature of the substrate 2 can be kept constant by controlling the heater 21 so that the temperature is constant by the temperature controller 23.

According to the above heating method, since the upper surface 12 of the heating block is brought into contact with the bottom surface of the substrate 2, heat from the heater 21 can be efficiently conducted, and the temperature of the substrate 2 can be stably controlled. The stable temperature control can not only prevent the breakage of the connection portion 3 but also stabilize the state of the liquid material 4 to stabilize the application. Further, since the plurality of first through holes 13 opened over the substrate surface 12 can uniformly perform suction, the substrate 2 can be similarly contacted, and the flatness of the substrate 2 can be maintained.

[2] Heating at the lowered position (FIG. 6)

When the heating block 11 is in the lowered position, the second valve 18 communicates the second flow path 16 in the heating block 11 with the pressurization source 20. Thereby, the gas (27) is ejected from the second flow channel 16 and the second port 14 communicating with each other at the other end in the heating block 11. Since the second circulation port 14 is separated from the substrate 2, the gas is ejected toward the bottom surface of the substrate 2. The ejected gas is heated by the heater 21 in the heating block 11, and heat is transferred to the substrate 2 by the heated gas. The temperature of the substrate 2 can be kept constant by controlling the heater 21 so that the temperature is constant by the temperature controller 23.

According to the above heating method, heat is also conducted to the moving substrate 2 by ejecting the heated gas from the separated portion. That is, since the temperature of the moving substrate 2 can be controlled, the temperature change in the underfill step can be made extremely small. Since the heated gas is discharged from the plurality of second flow ports 14 opened over the substrate surface 12, the entire substrate 2 can be heated.

By appropriately combining the above items [1] and [2], the temperature of the substrate 2 in the underfill step can be kept constant, and damage to the connection portion 3 between the semiconductor chip 1 and the substrate 2 can be prevented, regardless of whether the substrate 2 is stopped for coating or moved for transportation. The heating at the lowered position in [2] is preferably performed before and after the coating operation step. The heating before the coating operation step is preliminary heating, and the heating after the coating operation step is temperature-maintaining heating for suppressing the temperature change of the substrate within a predetermined range.

In the above, the configuration in which the bottom surface of the substrate 2 is brought into contact with the upper surface 12 of the heating block by causing the suction force to act on the first through-flow holes 13 has been described, but the substrate 2 may be brought into contact with the upper surface 12 of the heating block by combining the substrate pressing member 106 and the elevating mechanism 24 without providing the first through-flow holes 13. However, when the bottom surface of the substrate is processed with high accuracy, the top surface of the heating block can be attracted so as to follow the bottom surface of the substrate by providing the flow port through which the suction force acts. Therefore, the contact area is increased, and the effect of effectively conducting heat can be obtained. Further, when the upper surface 12 of the heating block is used as a coating stage, the flatness of the substrate 2 is improved, and the coating accuracy is improved. These effects are particularly remarkable in the case where the substrate 2 is thin. On the other hand, in the configuration in which the substrate pressing member 106 is used for clamping without providing a flow port for exerting a suction force, there is a problem that the central portion of the substrate is warped.

For the above reasons, it is preferable to adopt a configuration in which the heating block 11 is provided with a flow port for causing the suction force to act.

The present invention will be described in detail below with reference to examples, but the present invention is not limited to these examples.

Example 1

[ coating apparatus ]

As shown in fig. 7, the coating apparatus 101 of the present embodiment includes: the discharge device 102, the drive mechanism 103, the conveyance mechanism 104, the heating mechanism 105, and the control unit 124 for controlling these components.

The discharge device 102 includes: a storage container 107 (not shown) for storing the liquid material 4, and a nozzle 108 (see fig. 1) for discharging the liquid material 4. The discharge device 102 is mounted on the XYZ drive mechanism 103 so that the nozzle 108 faces the application surface of the substrate 2 to be applied, and is movable onto the substrate 2 to be applied conveyed by the conveyance mechanism 104.

The conveyance mechanism 104 is provided across the width of the coating device 101, and is composed of three conveyance units (114, 115, and 116), and can be independently operated. Since the conveying mechanism 104 is constituted by three conveying units, even when the coating operation is being performed, the carrying-in and carrying-out operations can be performed individually, and the step processing time can be shortened. As shown in fig. 8, the conveyance mechanism 104 of the present embodiment has a structure in which two rail-shaped members 109 extending across the width of the substrate 2 to be conveyed are provided in parallel, and a conveyor belt 111 that rotates by a roller 110 is provided above the rail-shaped members 109. The roller 110 is rotationally driven to rotate the conveyor belt 111, and the substrate 2 placed on the conveyor belt 111 is conveyed. The widths of the two rail-shaped members 109 can be changed in accordance with the size of the substrate 2. Here, as shown by the arrows in fig. 7, the substrate 2 is carried into the coating device 101 from the left-side conveying mechanism 114, and is carried out of the coating device 101 from the right-side conveying mechanism 116 via the center conveying mechanism 115.

The heating means 105 is constituted by three heating units (121, 122, 123). Each heating unit is disposed between the two rail-shaped members 109 constituting the conveying mechanism 104 in correspondence with the conveying units (114, 115, 116). By configuring the heating mechanism 105 with three heating units, the substrate 2 can be heated in accordance with individual transfer operations.

Since the heating block 11 has substantially the same size as the substrate 2, the heating unit may not be provided in a space that is insufficient in size of the substrate 2, such as the carry-in side and the carry-out side. Therefore, in the present embodiment, the auxiliary heating units (118, 119, and 120) are provided to be smaller than the heating units. The difference with the heating unit is that: the auxiliary heating unit is fixed at a lowered position where the auxiliary heating unit is separated from the substrate 2 without performing a lifting movement, and discharges the heated gas only from the second through-holes 14 without providing the first through-holes 13. The size of the auxiliary heating units (118, 119, 120) may be set to a size that can be embedded between the three heating units (121, 122, 123), and may be appropriately changed and arranged. In the present embodiment, an auxiliary heating unit 118 is provided at the position of the carry-in part, an auxiliary heating unit 119 is provided at the position between the central heating unit 122 and the right heating unit 123, and an auxiliary heating unit 120 is provided at the position of the carry-out part.

The set temperature of the heating mechanism 105 varies depending on the size of the substrate 2, the number of semiconductor chips 1, and the like, but is set approximately in the range of 100 degrees celsius to 150 degrees celsius. In this range, heating may be controlled to be performed according to the purpose of preliminary heating, the optimum temperature for coating, and temperature maintenance heating.

[ actions ]

The operation of the coating apparatus 101 of the present embodiment will be described with reference to fig. 9 to 12.

On the left side of the coating device 101 there is a carrier or a previous step device for supplying uncoated substrates 2. On the right side of the coating apparatus 101, there is an unloader or a post-step apparatus that recovers the substrate 2 that has been coated. Hereinafter, the heating unit and the auxiliary heating unit are referred to as stages, respectively, for convenience of description.

When the operation is started, before the substrate 2 is carried into the coating device 101, the temperatures of the carry-in port table 118 and the front stage 121 are read (step 101), and whether or not the temperatures are within the set temperature range is determined (step 102). If the temperature does not reach the set temperature, the temperature is read again, and the operation is repeated until the set temperature is reached. When the temperature reaches the set temperature, it is determined whether or not the substrate 2 remains on the front stage 121 (step 103). When the substrate 2 remains, the substrate 2 is kept on standby until it is removed. When the substrate 2 is not left, the gas starts to be ejected from the carry-in port table 118 and the front stage 121 (step 104). Then, the substrate 2 is transported to the front stage 121 position (step 105). When the substrate 2 reaches the front stage 121, the gas ejection from the front stage 121 is stopped, the front stage 121 is raised to support the substrate 2, and the suction of the front stage 121 is started to suck and fix the substrate 2 (step 106).

When the coating stage is fixed to the front stage 121, the temperature of the coating stage 122 is read (step 107), and it is determined whether or not the temperature is within the range of the set temperature (step 108). When the temperature does not reach the set temperature, the temperature of the substrate 2 fixed to the front stage 121 is read again while controlling the temperature to be constant (step 110), and the operation is repeated until the temperature reaches the set temperature. When the temperature reaches the set temperature, it is determined whether or not the substrate 2 remains on the coating stage 122 (step 109). When the substrate 2 remains, the substrate 2 fixed to the front stage 121 is kept at a constant temperature (step 110) and stands by until the substrate 2 is removed. When the substrate 2 does not remain, the gas starts to be ejected from the coating stage 122 (step 111). Then, the suction of the front stage 121 is cut off, the front stage 121 is lowered, and the gas discharge from the front stage 121 is started (step 112). Thereafter, the substrate 2 is conveyed to the coating stage 122 position (step 113). When the substrate 2 reaches the position of the coating stage 122, the gas from the coating stage 122 stops being discharged, the coating stage 122 rises to support the substrate 2, and suction of the coating stage 122 is started to adsorb and fix the substrate 2 (step 114).

The liquid material 4 is applied to the application table 122 by the discharge device 102 (step 115). When the coating is completed, the temperatures of the intermediate stage 119 and the background stage 123 are read (step 116), and it is determined whether or not the temperatures are within the set temperature range (step 117). When the temperature does not reach the set temperature, the temperature of the substrate 2 fixed to the coating stage 122 is read again while controlling the temperature to be constant (step 119), and the operation is repeated until the temperature reaches the set temperature. When the temperature reaches the set temperature, it is determined whether or not the substrate 2 remains on the background 123 (step 118). When the substrate 2 remains, the substrate 2 fixed to the coating table 122 is kept at a constant temperature (step 119) while being kept on standby until the substrate 2 is removed. When the substrate 2 is not left, the gas starts to be ejected from the intermediate stage 119 and the back stage 123 (step 120). Then, the suction of the coating stage 122 is cut off, the coating stage 122 is lowered, and the gas discharge from the coating stage 122 is started (step 121). Thereafter, the substrate 2 is transported to the back stage 123 position (step 122). When the substrate 2 reaches the position of the back stage 123, the gas discharge from the back stage 123 is stopped, the back stage 123 is raised to support the substrate 2, and the suction of the back stage 123 is started to adsorb and fix the substrate 2 (step 123).

When the temperature of the carrying-out port base 120 is fixed to the back stage 123, the temperature is read (step 124), and whether or not the temperature is within the set temperature range is determined (step 125). When the temperature does not reach the set temperature, the temperature of the substrate 2 fixed to the back stage 123 is controlled to be constant (step 127), and the temperature is read again and this operation is repeated until the set temperature is reached. When the temperature reaches the set temperature, it is determined whether or not the substrate 2 can be carried out of the apparatus 101 (step 126). When the substrate 2 cannot be carried out, the substrate is kept on standby until it can be carried out while controlling the temperature of the substrate 2 fixed to the back stage 123 to be constant (step 127). When the conveyance is possible, the gas starts to be discharged from the conveyance port base 120 (step 128). Then, the suction of the back stage 123 is cut off, the back stage 123 descends, and the gas starts to be discharged from the back stage 123 (step 129). Thereafter, the substrate 2 is carried out of the apparatus 101 (step 130).

The above operation represents a flow of coating one substrate 2, and it is needless to say that a plurality of substrates 2 may be coated continuously. In this case, since the operations from step 101 to step 106, step 107 to step 114, step 115 to step 123, and step 124 to step 130 can be performed independently, the operations can be performed simultaneously, and the time for step processing can be shortened.

Example 2

In embodiment 1, the flow path in the heating block 11 is divided into the negative pressure system 15 and the pressurizing system 16, but it may be a single flow path. Fig. 13 is a sectional view of a main part of a heating mechanism according to example 2, and fig. 14 is a block diagram thereof.

The heating block 201 of example 2 has a substantially rectangular parallelepiped shape, and the upper surface 202 facing the substrate is a surface having substantially the same size as the substrate 2 and a substantially narrow width. The upper surface 202 has a plurality of flow ports 203 uniformly provided at regular intervals. Each flow port 203 communicates with a flow path 204 provided in the heating block 201. The flow path 204 leads to a switching valve 205 provided at a different location from the heating block 201, and is communicated with a negative pressure source 206 and a pressurizing source 207 via the switching valve 205. By switching the switching valve 205, either the negative pressure source 206 or the pressurizing source 207 is communicated with the flow path 204, and the gas in the flow path 204 is sucked in or discharged into the flow path. A plurality of switching valves 205 may be provided depending on the pressure intensities of the negative pressure source 206 and the pressurizing source 207. The heater 21, the temperature sensor 22, the elevating mechanism 24, and the like are the same as those in embodiment 1.

When the heating block 201 is in the raised position, the switching valve 205 connects the flow path 204 in the heating block 201 and the negative pressure source 206. Thereby, gas is sucked from the flow channel 204 in the heating block 201 and the flow port 203 communicating with the other end. The substrate 2 is present immediately above the flow port 203, and the substrate 2 is sucked by suction from the flow port 203, so that the upper surface 202 of the heating block is brought into close contact with the bottom surface of the substrate 2. In this manner, since the bottom surface of the substrate 2 comes into contact with the upper surface 202 of the heating block, heat from the heater is directly and rapidly conducted via the heating block 201. The temperature of the substrate 2 can be kept constant by controlling the heater so that the temperature is constant by the temperature control unit 208.

When the heating block 201 is at the lowered position, the switching valve 205 communicates the flow path 204 in the heating block 201 with the pressurization source 207. Thereby, gas is ejected from the flow channel 204 in the heating block 201 and the flow port 203 communicating with the other end. Since the flow port 203 is separated from the substrate 2, the gas is ejected toward the bottom surface of the substrate 2. The ejected gas is heated by the heater in the heating block 201, and heat is transferred to the substrate 2 by the heated gas. The temperature of the substrate 2 can be kept constant by controlling the heater so that the temperature is constant by the temperature control unit 208.

Further, according to the heating block 201 of the present embodiment, by providing one flow path, it is possible to reduce the number of valves, pipes leading to the valves, and the like, and to save space.

Claims (14)

1. A substrate heating apparatus for heating a substrate which is conveyed from below in one direction and on which a work piece placed thereon is coated while being conveyed, the substrate heating apparatus comprising:

a heating member having a flat upper surface that contacts the bottom surface of the substrate to heat the substrate, and a discharge opening that is formed in the upper surface and discharges a heating gas to the bottom surface of the substrate; and

a lifting mechanism for lifting the heating member;

the lifting mechanism has a lifting position for supporting the substrate above the heating member from the bottom surface and a descending position for separating the heating member from the substrate, and moves to the lifting position when coating the liquid material and moves to the descending position when conveying the substrate,

the substrate is heated by bringing the upper surface of the heating member into contact with the bottom surface of the substrate at the raised position of the elevating mechanism, and the heated gas is ejected from the ejection opening at the lowered position of the elevating mechanism to heat the substrate.

2. The substrate heating apparatus according to claim 1, wherein the heating member has a suction opening on an upper surface thereof for applying a suction force to a bottom surface of the substrate,

in the ascending position of the lifting mechanism, the suction force is exerted from the suction opening.

3. The substrate heating apparatus according to claim 2, wherein the ejection opening and the suction opening are formed by the same opening, and the opening is connected to a negative pressure source and a pressurization source via a switching valve.

4. The substrate heating apparatus according to claim 2, wherein the plurality of discharge openings and the plurality of suction openings are provided.

5. The substrate heating apparatus according to claim 1 or 2, wherein a plurality of heating members are arranged in series in a conveyance direction of the substrate.

6. The substrate heating apparatus according to claim 5, wherein the heating member is constituted by a plurality of kinds of heating blocks having different lengths.

7. A liquid material application apparatus characterized by comprising: the substrate heating apparatus according to claim 1 or 2; a discharge device that discharges the liquid material; a drive mechanism for moving the discharge device relative to the substrate; a conveying mechanism for conveying the substrate in one direction; and a control unit for controlling the operations of these components.

8. The liquid material application apparatus according to claim 7, wherein the control portion causes the elevating mechanism to be in the raised position to bring the upper surface of the heating member into contact with the bottom surface of the substrate when performing the application operation on the workpiece disposed on the substrate, and causes the elevating mechanism to be in the lowered position to eject the heated gas from the ejection port when the substrate is conveyed.

9. A substrate heating method for heating a substrate which is conveyed from below in one direction and on which a work piece arranged thereon is coated while being conveyed, the substrate heating method comprising:

a contact heating step of heating the substrate by bringing a flat upper surface of the heating member into contact with a bottom surface of the substrate by the elevating mechanism when the liquid material is applied; and

and a non-contact heating step of separating the bottom surface of the substrate from the upper surface of the heating member by an elevating mechanism and ejecting a heating gas from an ejection opening formed in the upper surface of the heating member when the substrate is conveyed.

10. The substrate heating method according to claim 9, wherein in the contact heating step, an attraction force is exerted from an attraction opening formed on an upper face of the heating member.

11. The substrate heating method according to claim 10,

the discharge opening and the suction opening are formed by the same opening, and the opening is connected to a negative pressure source and a pressurization source via a switching valve;

in the contact heating step, communicating the opening with a negative pressure source;

in the non-contact heating step, the opening is brought into communication with a pressurized source.

12. The method of claim 9 or 10, wherein the non-contact heating step is performed before and after the coating operation.

13. The method of claim 9 or 10, wherein the coating operation is an underfill step.

14. The substrate heating method according to claim 13, wherein in the contact heating step and the non-contact heating step, the entire bottom surface of the substrate is uniformly heated.