HK1150900A - High permittivity low leakage capacitor and energy storing device and method for forming the same - Google Patents

Description

High permittivity low leakage capacitor and energy storage device and method of forming the same

RELATED APPLICATIONS

The benefit and priority of U.S. provisional application 60/978,067, filed on 5/10/2007, the contents of which are hereby incorporated by reference in their entirety.

Technical Field

The present disclosure relates generally to capacitors and memory devices. More particularly, the present disclosure relates to high permittivity low leakage capacitors and energy storage devices and methods of forming the same.

Background

In the embodiments described herein, the following understanding of the terminology used in describing the high capacity energy storage capacitor should be understood and considered. In the early literature, the term "dielectric constant" of a material was used to describe its ability to polarize or "permittivity" when the material is placed in an electric field. The term "dielectric breakdown" is used to describe the voltage at which an insulating material will "break down" and conduct current. This dielectric breakdown voltage is also referred to as dielectric strength. Since the abbreviation used for both terms is "dielectric" and the material itself is also called dielectric (dielectricity), there is some confusion in the literature as to what is being discussed. Thus, the term "permittivity" is now (primarily) used to describe the ability of a material to polarize its charge and change its "dielectric constant" of its spatial volume to a higher value than the dielectric constant of a vacuum. Dielectric breakdown voltage is sometimes used to indicate the dielectric strength of a material.

The relative permittivity of a material is simply obtained by dividing the measurement of its static dielectric constant by the vacuum dielectric constant.

Wherein e_rRelative permittivity

e_sMeasured permittivity

e_oVacuum permittivity (8.8542E-12F/m)

Thus, when the term "good dielectric" is used, this (typically) means that the material exhibits good electrical insulation properties, such as a high breakdown voltage and low electrical conductivity. A material with a good "dielectric constant" for a capacitor means that it has a good "permittivity" (high value), and the material will increase the capacitance of a capacitor of a given size by a "good" (high) amount when the capacitor is placed between the electrodes.

When two conductive plates are separated by a non-conductive (i.e., dielectric) medium, a capacitor is formed. The capacitance value depends on the size of the plates, the distance between the plates and the properties of the dielectric. The relationship is:

wherein

e_oPermittivity under vacuum (8.8542E-12F/m)

e_rRelative permittivity of a material

A is the surface area of one plate (two plates are the same size)

d-distance between two plates

Although the permittivity of a vacuum is a physical constant, the relative permittivity depends on the material.

Typical relative permittivity

Material	er
		Vacuum	1
Water (W)	80.1(20℃)
		Organic coating	4-8

A large difference between the permittivity of water and the permittivity of the organic coating is noted.

Certain materials are as followsAt room temperatureRelative static permittivity of

Dielectric constant of material

Vacuum 1 (by definition)

Air 1.00054

Teflon (R)^TM(Teflon^TM) 2.1

Polyethylene 2.25

Polystyrene 2.4-2.7

Paper 3.5

Silica 3.7

Concrete 4.5

Heat-resisting glass 4.7(3.7-10)

Rubber 7

Diamond 5.5-10

Salt 3-15

10-15 parts of graphite

Silicon 11.68

Methanol 30

Furfural 42.0

Glycerol 47-68

88-80.1-55.3-34.5 parts of water

Hydrofluoric acid 83.6(0 deg.C)

Formamide 84.0(20 deg.C)

Sulfamic acid 84-100(20-25 deg.C)

Hydrogen peroxide 128aq-60(-30-25 deg.C)

Hydrocyanic acid 158.0-2.3(0-21 ℃ C.)

Titanium dioxide 86-173

Strontium titanate 310

Barium strontium 15nc-500

Barium titanate 90nc-1250-

(La，Nb)：(Zr，Ti)PbO3 500，6000

It is interesting to note that materials with large dipole moments and high permittivity are usually conducting salts or absolutely polar inorganic acids or bases. In these cases, their liquid form is difficult to use and/or toxic or corrosive. Which makes their use difficult and dangerous. Polar salts often exhibit undesirable electrical conductivity when they are slightly impure and/or exposed to atmospheric conditions having humidity.

Inorganic salts exhibiting non-conductive behavior and very high permittivity are inorganic salts of transition metals and other inorganic salts exhibiting high permittivity due to their lattice structure. The use of these materials is difficult due to their crystalline nature. Many efforts have been made to make these types of materials easier to manufacture by using thin coatings and high temperature melting and sintering methods.

Disclosure of Invention

In accordance with one or more features of the present disclosure, a method of preparing a high permittivity dielectric material for use in a capacitor is provided. Several high permittivity materials having enhanced properties in organic non-conductive media and methods of making the same are disclosed.

In accordance with one or more features of the present disclosure, a general method for forming thin films of certain specific dielectric materials is disclosed, wherein organic polymers, shellac, silicone oil and/or zein are used to create a dielectric coating of low conductivity. Further, in accordance with one or more features of the present disclosure, a method of forming certain transition metal salts into salt or oxide matrices using a non-toxic reducing agent at low temperatures is demonstrated.

Further, in accordance with one or more features of the present disclosure, to improve manufacturing yield and operational performance of such devices, circuit structures and associated methods of operation are provided for recovering and regenerating leakage current from long-term storage capacitors.

Drawings

The above-mentioned features and objects of the present disclosure will become more apparent with reference to the following description taken in conjunction with the accompanying drawings, in which like reference numerals denote like elements and in which:

fig. 1 is an exemplary flow diagram illustrating a method for preparing a high permittivity dielectric material in accordance with an embodiment of the present disclosure.

Fig. 2 illustrates a multi-state circuit diagram for recovering leakage current from an energy storage capacitor in accordance with one or more embodiments of the present disclosure.

Fig. 3 is an exemplary flow chart illustrating a method of recovering and regenerating leakage current from a capacitor using the multi-state circuit of fig. 2, according to an embodiment of the present disclosure.

Fig. 4 is a cross-sectional view of a high permittivity low leakage capacitor according to an embodiment of the present disclosure.

Detailed Description

The present disclosure relates to methods of forming high permittivity low leakage capacitors and energy storage devices.

In one or more embodiments, the methods, materials, and devices described in the present disclosure reduce the difficulties associated with fabricating high permittivity materials, reduce the difficulties of incorporating these materials into devices, improve the performance of materials, and illustrate methods by which the reliability and lifetime of devices can be improved by enhancing the material performance using external electronic components. The result of these improvements is to reduce the rejection rate of such devices at the time of manufacture and also to improve the long term reliability of the devices in actual use. Furthermore, using the methods set forth in this disclosure will also reduce the manufacturing costs of materials and devices, and help reduce waste byproducts that cannot be used in such applications.

When the capacitor and its relationship to energy are considered to determine the work that must be done to charge the capacitor (i.e., potential E), the work done is equal to the potential stored in the capacitor. The work done to transfer a given amount of charge into a given capacitance is given by:

wherein the relationship between capacitance and charge is:

q＝C*V

where q is the charge (coulomb)

Capacitance (Farad)

Potential (volt)

Thus, substituting q in the above work equation yields:

where E is the energy stored in the capacitor and is equal to the work done to store charge on the capacitor. It should therefore be noted that the energy stored in a capacitor is related to the square of the voltage applied to the capacitor.

Thus, in one or more embodiments, it is important that the voltage rating of the capacitor be as high as possible when energy storage is first used for the device. In one or more embodiments, the capacitor has low leakage current in addition to a high breakdown voltage. In other words, when the capacitor has been charged to a given voltage, the rate at which charge is conducted from one electrode to the other should be a relatively small value. When the capacitor is charged for energy storage over some given period of time, the rate of leakage is an acceptably low enough value that will vary depending on the use of the storage device (how long it is stored) and thus the "value" of the stored energy (ease of recharging and cost of charging). Acceptable values for leakage typically vary widely from application to application. In all embodiments, electrical leakage is a common occurrence that needs to be avoided and minimized.

In one or more embodiments, the highest value of relative permittivity possible and the highest voltage rating provide the best capacitor for a given level of leakage when evaluating most energy storage applications. It should also be noted that the ability of the capacitor to "absorb" charge at a reasonable rate is also an important factor. The ability of a capacitor to behave as an ideal capacitor is an important parameter for most electronic applications, especially when the capacitor is operated at MHz and higher frequencies. The capacitor should also have the ability to fully discharge the charge that has been placed in its electrodes. Although all capacitive devices suffer from "irreversible dielectric absorption", in the field of energy storage, discharging a capacitor to a certain level determined by its application will impose limits on the acceptable level of this effect.

In one or more embodiments, substantial improvements in voltage rating, leakage current, and dielectric of energy storage capacitors are provided. The scope of the improvements described herein generally relates to the field of energy storage, but the methods and devices described herein may further be applied to general applications where such improvements may be used to produce devices exhibiting enhanced properties including better frequency response and reduced dielectric absorption in other applications for the materials and devices described herein.

In one or more embodiments, high permittivity low leakage capacitors and energy storage devices are described having the following improved characteristics:

1) a high rated voltage (high breakdown voltage),

2) the high relative permittivity of the dielectric ceramic material,

3) a low leakage current at maximum voltage charge,

4) the small size and the light weight of the device,

5) can be safely used due to low toxicity and other hazards

6) Easy and better manufacturing process, and the like,

7) the manufacturing method does not pollute the environment,

8) high discharge and charge rates, and

9) the ability to fully discharge.

It should be noted that previously known high permittivity materials are susceptible to aging and brittleness, and thus it is very difficult to form such materials into the shapes required for their various uses. Furthermore, since several previously known high permittivity materials are toxic, conventional machining and forming steps are considered undesirable in normal working environments. Due to their mechanical instability, previously known high permittivity materials are also susceptible to electrical and mechanical fatigue when faced with repeated electrical activation. Furthermore, previously known high permittivity materials need to be protected from environmental changes, such as humidity changes, which can lead to micro-cracks in the material and subsequent electrical failure. High permittivity materials known before formation at high temperatures are also required. High permittivity materials have traditionally been difficult to make into thin films due to their somewhat complex crystal structure and the need to form at high temperatures. Typically the crystalline structure is poorly formed and the films exhibit a reduced permittivity of the film relative to their bulk properties.

To alleviate these mechanical and electrical problems, in one or more embodiments, a permittivity material is provided that is mechanically ground and dispersed into an organic polymer for low temperature processing (i.e., processing temperatures below about 500 ℃). In the different embodiments described herein, multiple materials are described as being mixed and suspended in various polymers with desirable reinforcing properties. In one or more embodiments, shellac and zein have been found to provide enhanced properties for this application. In the case of both materials, the water and alcohol solubility of the polymer matrix provides the desired characteristics.

In one or more embodiments, using mechanically milled dielectrics, the dielectric's suspension permittivity in organic binders is increased by about 25% over shellac and zein in dry particulate form.

In one or more embodiments, in-situ formation of the dielectric is also performed to produce a unique dielectric having unique characteristics. In these examples, NaBH is added to an alcoholic solution of zein₄Are used to create and enhance the functionality of the mixture. When the resulting mixture is treated with concentrated ammonium hydroxide and heated, the resulting mixture produces a greatly enhanced dielectric material in which the permittivity increases to 250% based on a change in their permittivity from simple mixing with an organic binder. The final properties of such mixtures have shown the feasibility of a process and its utility, although greater optimization can be achieved with more experimentation.

In one or more embodiments, a suitably milled dielectric compound may alternatively be mixed with a silicone oil and a small amount of borax or sodium borohydride. When heated to 150 c, results similar to the 250% increase obtained with the organic polymer suspension were obtained.

In both of the above examples, the use of shellac, zein or silicone oil polymer resulted in undetectable leakage currents when the voltage between the electrodes was increased to 300V when the mixture was placed between the two electrodes in a capacitor configuration. In contrast, when a dielectric material such as barium titanate is ground and pressed between the electrodes, it exhibits unacceptable leakage current when tested.

The following representative examples will set forth specific examples of methods of making high permittivity materials according to the present disclosure. It is to be understood that the present disclosure is not limited to the disclosed embodiments, but is intended to cover various modifications thereof, including various example combinations of steps and components.

The process comprises the following steps:

a process for preparing a dielectric for leakage current reduction in capacitors or energy storage devices.

In one or more embodiments, 1.5g zein is added to 15mL ethanol. A small amount of water is added or the solution is optionally filtered or separated by centrifugal force to remove any undissolved particulate matter. The resulting neat solution is then treated with 0.5g to 15g of a high permittivity inorganic salt such as barium titanate powder that has been previously treated to be made into very small powders/nanopowders or other finely dispersed material. The resulting slurry is then thoroughly mixed and screened or spread onto the target electrode. Addition of small amounts of DMSO (dimethyl sulfoxide) or DMF (dimethyl formamide) will aid in the screening and drying process. The "green sheet" material may then be dried at low temperature or alternatively clamped or pressed into contact with another plate electrode. An elevated drying temperature of no more than about 60 deg.c (since excessive temperatures may lead to bubble formation and film cavitation) is then maintained until all solvent has been removed. Further heating may be performed at 150 ℃.

Procedure for preparing high permittivity dielectrics using low temperature methods

In one or more embodiments, 0.75g of strontium II carbonate is added to a stirred solution of 1.5g of gadolinium III carbonate and 15mL of DI water (deionized water). After the two compounds were dissolved, a solution of 200mG zein (or other organic polymer) with 200mG sodium borohydride and 2mL water was added drop-wise to the metal solution with good stirring. Organic polymer materials are optional if the dielectric material is to be formed or isolated without a binder. Small amounts of acetic acid may be added to help reduce the binder. After 5 minutes, 5mL of concentrated ammonium hydroxide was added. After a further 5 minutes, the solution can be filtered and then screened, spread or spin coated on the desired electrode material as described in procedure I, and evaporated and processed. Or the solution may be subjected to evaporation to isolate the dielectric material as a solid.

Reducing leakage current in dielectrics with small amounts of conductivity

In one or more embodiments, 1.5G zein is dissolved in 15mL ethanol. Then 5mL to 50mL of the slurry of the desired dielectric material is treated with zein solution and stirred well. The slurry can then be spread, screened or spin coated on the electrodes and processed as described in process i to produce devices.

IV, procedure for reducing leakage current by using shellac and high permittivity material

In one or more embodiments, for a 1.5G sample of high permittivity material produced by the process as described herein, it is added a 1.5G commercial grade shellac solution, wherein the dielectric is isolated as a solid powder or liquid form, which has been filtered or separated with centrifugal force to remove particulate matter. Additional ethanol may be added as needed to make the material into a usable slurry or solution. The resulting liquefied material may then be spread, screened or spin coated onto the electrode material as indicated in procedure i.

V. Process of Using Silicone oil and dielectric Material as capacitor

In one or more embodiments, 1.0g of silicone oil is added to 0 to 5g of a fine ground high permittivity dielectric. The mixture was stirred well and a small amount of sodium borohydride or borax salt (0 to 500mg) was added to the slurry or solution. If solutions or mixtures are available, they can be spread, screened or spin coated onto the electrode. The sheet may then be heated to about 150 to 300 c for several minutes to help increase the viscosity of the silicone oil. The top electrode may then be pressed or fixed with pressure to the silicone formed electrode and then heat treated for a period of time sufficient to fully stabilize the dielectric material. For example, a duration of about 3 hours at 150 ℃ to 200 ℃ is sufficient, although less time and different temperatures may be acceptable.

Fig. 1 is an exemplary flow diagram illustrating a method for preparing a high permittivity dielectric material in accordance with an embodiment of the present disclosure. The method begins by dissolving an organic polymer in a solvent to form a slurry solution (105). The solvent may be shellac, silicone oil and/or zein. In one embodiment, insoluble organic polymer is removed from the slurry solution (110) using, for example, filtration or centrifugal force separation. Inorganic salts may then be added to the slurry solution (115). The inorganic salt may be a transition metal salt, such as a Gd, Sr, Sn and/or Fe salt. In one embodiment, a breakdown voltage adjuvant may be added to the slurry solution (120). The breakdown voltage adjuvant may include one or more of Y, Ni, Sm, Sc, Tb, Yb, La, Te, Ti, Zr, Ge, Mg, Pb, Hf, Cu, Ta, Nb, and/or Bi. To aid in screening and drying, dimethylformamide and dimethylsulfoxide may be added to the slurry solution (125). The slurry solution may then be heated to a temperature of about 150 ℃ to about 300 ℃ to remove or evaporate the solvent (130).

Referring now to fig. 2, a multi-state circuit diagram for preparing an electronic device for recovering leakage current from an energy storage capacitor is shown in accordance with one or more embodiments. Fig. 2 shows four states of a novel circuit that has been developed for regenerating and recycling leakage current from a capacitor or capacitor array C1.

In fig. 2, the following elements are depicted. C1 is a capacitor or capacitor array capable of storing an amount of charge. When applied with a given voltage (V +), it exhibits leakage of current. C2 is a capacitor with good characteristics (e.g., smaller than C1) that exhibits lower leakage current (or may be the same leakage current but with much smaller capacitance area). D1 isDiode with the ability to "block" the voltage from C1 back to V_SSThe characteristic of (c). When the voltage output from the secondary winding of T1 exceeds the voltage present on C1 and the forward voltage drop of D1, current will conduct to the C1 capacitor or capacitor array.

S1 is a switch capable of electrically connecting the high voltage side of C1 to the charging voltage V +. In one position it is connected to V + and in another position it is open connected or connected to a load. S2 and S3 are electrically controlled switches that have the ability to switch between two different outputs. These switches need not be high voltage switches capable of withstanding V +. T1 is a transformer or equivalent inductor of the "flyback" type, which has the ability to withstand voltages greater than or equal to V + on the secondary winding. V + is the charging voltage, which is connected to the main energy storage capacitor or capacitor array C1 during the charging cycle. V_SSIs a relatively low voltage that is present at the electrode of C1 opposite V +, creating a potential difference between the two electrodes.

Fig. 3 is an exemplary flow chart illustrating a method of recovering and regenerating leakage current from capacitor C1 using the multi-state circuit of fig. 2, according to an embodiment of the present disclosure. Referring to state a in the circuit diagram of fig. 2, current is shown flowing from the V + source through S1 to the positive plate (305) of C1. In this case, S2 is connected to V_SSSo that charge can be accumulated on C1 to create a potential difference between the two electrodes (310). In this state, the state of S3 does not matter, and no current flows in the lower part of the circuit.

In state B of the circuit diagram of fig. 2, V + has been disconnected from the positive plate of C1, and the other plate of C1 is connected to ground through S2. This shows a typical situation where the stored load of the C1 capacitor is being used to power a load through the S1 switch.

In states C and D of the circuit diagram of fig. 2, two states are shown, in which the C1 storage capacitor is not being charged or discharged. However, there is a non-ideal current flow through the plates due to leakage current from one plate to the otherAnd flows to C2 through S2 switch (315). This current will charge C2 to a certain voltage at a certain rate based on the relative capacitance of C1 and C2 and the rate of leakage (320). Switch S2 is disconnected from ground and connected to the input of C2 (315). While in state C, the C2 capacitor is charged to some predetermined voltage (V1). At the predetermined voltage, the comparator opens "V" of C2 and C1 using S2_SS"the plates are disconnected and then the positive plate of C2 is connected to the input of the T1 transformer using S3, as shown in state D (325). This discharge current introduces a voltage across the secondary winding of T1 through T1 that rises to a voltage value (325) sufficient to return some charge through diode D1 to C1. Once the discharge of C2 is complete (which is determined by the comparator's judgment of the voltage on the positive plate of C2), the comparator returns all switches to state C unless there is a requirement to charge or discharge C1.

In the above operation, when C1 is not used during a charge or discharge time period, the relatively "leaky" capacitor can return some charge loss through leakage of C1. Due to the efficiency of the circuit (which can be designed to > 90% efficiency), the leakage from the C1 device is effectively reduced to a fraction of a dozen. This can greatly improve yield for the fabrication of large arrays of capacitors. Unwanted impurities that increase leakage current are often present in the material and often cannot be detected until the entire assembly has been completed. In large array capacitors, these correspond to a very large number of good devices in the array being discarded due to failure of a relatively small number of devices.

In one or more embodiments, such circuits are intended for energy storage, making it possible for a relatively large period of time to elapse between demands for energy charging or energy discharging. During those states (a and B), no recharge circuit may be used as described.

As can be seen from the foregoing description, the present method avoids the high temperature methods associated with existing high permittivity materials by using an organic substrate to suspend and coat the high dielectric material. High processing temperatures are also avoided by the present process. Further, a novel method for preparing a high permittivity material is disclosed and when it is used in combination with a high breakdown voltage material (e.g. zein), a process for producing a high dielectric capacitor having high breakdown voltage characteristics is made possible.

Due to the nature of the process, the process varies depending on the control of the leakage current. The coating material is a general material that is considered to coat any material (including contaminating materials), and therefore it makes the manufacture of the device easier and with better yield. Since it is difficult to make most good high permittivity dielectrics sufficiently pure to exhibit low conductivity (and thus high leakage currents), it is desirable to use organic binders in the matrix of high permittivity materials because contact with conductive contaminants or defective crystals that may have conductivity can be prevented by coating the organic substrate.

Fig. 4 is a cross-sectional view of a high permittivity low leakage capacitor according to an embodiment of the present disclosure. As shown, the electrodes 10 of the capacitor and the electrodes 11 of opposite polarity thereof are spaced approximately equally apart. In the intervening space are multiphase dielectric materials 12 and 13. In one embodiment, the dielectric material may be formed of an existing material such as barium titanate or other such known high dielectrics, and the intervening spaces between the high dielectric materials 12 are filled with an insulating material 13 such as zein, shellac, cross-linked silicone or other such material. Due to the improvements of the present invention, low temperature processing using insulating dielectric 13 may combine relatively low temperature stability with molten materials.

The methods described herein provide unique methods for making high permittivity capacitors without resorting to standard high temperature manufacturing methods that are overwhelmingly withstood by most organic compounds. This new approach greatly expands the materials that can be used to make these capacitors and improves the performance of the capacitors by reducing the leakage current that many organic polymers may exhibit.

In one or more embodiments, Gd, Sr, Sn, and Fe may be used as the high permittivity dielectric. In one or more embodiments, shellac, zein, and silicone oil may be used as high voltage breakdown adjuvants. In other embodiments, other dielectrics and some breakdown voltage enhancers (adjuvants) may be used, such as, but not limited to, Y, Ni, Sm, Sc, Tb, Yb, La, Te, Ti, Zr, Ge, Mg, Pb, Hf, Cu, Ta, Nb, and Bi.

Furthermore, an electronic circuit is shown, wherein the leakage current of the device may be "fed back" into the voltage charge of the primary energy storage unit when in an unused and storage state. This will extend the life of the charge in the capacitor and also improve the yield in the manufacturing process.

While the system and method have been described in terms of what are presently considered to be specific embodiments, the disclosure is not limited to the disclosed embodiments, but rather is intended to cover various modifications and similar arrangements included within the spirit and scope of the claims, the scope of which should be accorded the broadest interpretation so as to encompass all such modifications and similar structures. The present disclosure includes any and all embodiments of the following claims.

Claims (36)

1. A high permittivity capacitor, comprising:

a pair of parallel electrodes; and

a high permittivity material disposed between the pair of electrodes, the high permittivity material comprising a mixture of a high permittivity dielectric material and an insulating dielectric material.

2. The high permittivity capacitor of claim 1, wherein the mixture of high permittivity dielectric material and insulating dielectric material is multiphase.

3. The high permittivity capacitor of claim 1, wherein the high permittivity dielectric material comprises an inorganic salt.

4. The high permittivity capacitor of claim 1, wherein the insulating dielectric material comprises an organic polymer.

5. The high permittivity capacitor of claim 3, wherein the inorganic salt comprises a transition metal selected from the group consisting of Gd, Sr, Sn, and Fe.

6. The high permittivity capacitor of claim 1, wherein the high permittivity material is formed at a low temperature of less than about 500 ℃.

7. The high permittivity capacitor of claim 4, wherein the organic polymer is selected from the group consisting of shellac, silicone oil and zein.

8. The high-permittivity capacitor of claim 7, wherein the zein has an alcohol content of about 100 g/L.

9. The high-permittivity capacitor of claim 1, wherein the high-permittivity material further comprises a breakdown voltage adjuvant selected from the group consisting of Y, Ni, Sm, Sc, Tb, Yb, La, Te, Ti, Zr, Ge, Mg, Pb, Hf, Cu, Ta, Nb, and Bi.

10. The high permittivity capacitor of claim 1, wherein the high permittivity material comprises a mixture of an inorganic salt and an organic polymer dissolved in a solvent.

11. The high permittivity capacitor of claim 4, wherein the organic polymer is a high voltage breakdown adjuvant.

12. A memory device, comprising:

a first capacitor having a leakage current;

a second capacitor coupled to the first capacitor for collecting the leakage current from the first capacitor; and

control means coupled to said first capacitor and said second capacitor for controlling said leakage current to flow from said first capacitor to said second capacitor and back to said first capacitor to increase the efficiency and enhance the performance of said first capacitor.

13. The storage device of claim 12, wherein the first capacitor has a high permittivity dielectric material comprising a mixture of a high permittivity dielectric material and an insulating dielectric material.

14. The storage device of claim 13, wherein the mixture of high permittivity dielectric material and insulating dielectric material is multi-phased.

15. The storage device of claim 13, wherein the high permittivity dielectric material comprises an inorganic salt and the insulating dielectric material comprises an organic polymer.

16. The storage device of claim 12, wherein the second capacitor has a high permittivity dielectric material comprising a mixture of an inorganic salt and an organic polymer.

17. The memory device of claim 15 or 16, wherein the inorganic salt comprises a transition metal selected from the group consisting of Gd, Sr, Sn, and Fe.

18. The memory device of claim 15 or 16, wherein the organic polymer is selected from the group consisting of shellac, silicone oil and zein.

19. The memory device of claim 15 or 16, wherein the high permittivity material further comprises a breakdown voltage adjuvant selected from the group consisting of Y, Ni, Sm, Sc, Tb, Yb, La, Te, Ti, Zr, Ge, Mg, Pb, Hf, Cu, Ta, Nb and Bi.

20. The storage device of claim 12, wherein the control means comprises a plurality of switches.

21. The memory device of claim 12, wherein the control means comprises a diode.

22. The storage device of claim 12, wherein the control means comprises a transformer coupled between the first capacitor and the second capacitor, the transformer for receiving the leakage current from the second capacitor and sending a portion of the leakage current back to the first capacitor.

23. The storage device of claim 12, wherein the control means comprises a plurality of switches.

24. A method for preparing a high permittivity dielectric material, the method comprising:

dissolving an organic polymer in a solvent to form a slurry solution; and

adding an inorganic salt to the slurry solution.

25. The method of claim 24, further comprising removing insoluble organic polymer from the slurry solution prior to the step of adding inorganic salt.

26. The method of claim 24, wherein the inorganic salt comprises a transition metal selected from the group consisting of Gd, Sr, Sn, and Fe.

27. The method of claim 24, wherein the organic polymer is selected from the group consisting of shellac, silicone oil and zein.

28. The method of claim 24, further comprising adding a breakdown voltage adjuvant to the slurry solution, the breakdown voltage adjuvant selected from the group consisting of Y, Ni, Sm, Sc, Tb, Yb, La, Te, Ti, Zr, Ge, Mg, Pb, Hf, Cu, Ta, Nb, and Bi.

29. The method of claim 24, further comprising adding dimethyl sulfoxide to the slurry solution.

30. The method of claim 24, further comprising adding dimethylformamide to the slurry solution.

31. The method of claim 24, further comprising heating the slurry solution to a temperature of about 150 ℃ to about 300 ℃.

32. A method for making a high permittivity capacitor, said method comprising coating a capacitor plate with a dielectric solution comprising an inorganic salt, an organic polymer and a solvent.

33. The method of claim 32, wherein the inorganic salt comprises a transition metal selected from the group consisting of Gd, Sr, Sn, and Fe, and the organic polymer is selected from the group consisting of shellac, silicone oil, and zein.

34. The method of claim 32, wherein the dielectric solution further comprises a breakdown voltage adjuvant selected from the group consisting of Y, Ni, Sm, Sc, Tb, Yb, La, Te, Ti, Zr, Ge, Mg, Pb, Hf, Cu, Ta, Nb, and Bi.

35. A method for recovering and regenerating leakage current from a capacitor, the method comprising:

applying a voltage to the first capacitor;

storing charge corresponding to the applied voltage in the first capacitor;

controlling a first switch to allow a leakage current to flow from the first capacitor to a second capacitor;

storing charge corresponding to the leakage current of the first capacitor in the second capacitor;

controlling a second switch to allow charge from the second capacitor corresponding to the leakage current to flow back to the first capacitor to increase the efficiency and enhance the performance of the first capacitor.

36. The method of claim 35, wherein the second capacitor has a leakage current that is substantially lower than the leakage current of the first capacitor.