HK1148582A - Display device defect detecting method and display device defect detecting apparatus - Google Patents

Description

Defect detection method and defect detection device for display device

Technical Field

The present invention relates to a flat panel display device such as an organic Electroluminescence (EL) device, a liquid crystal display device, or a Field Emission Display (FED). Further, the present invention relates to a defect detection method and a defect detection apparatus for the display device.

Background

Display devices such as liquid crystal display devices are now widely used in various electronic apparatuses because of their features of being small, thin, low in power consumption, and lightweight. A driving circuit or a thin film transistor for driving these display elements is manufactured using an exposure apparatus generally called a stepper (stepper).

However, particularly with the progress of the enlargement of liquid crystal display elements, when the eighth generation and later is reached, there are many problems that the technology on the extension line cannot be applied by the conventional scale-up due to the manufacturing cost, the device transportation restriction, and the like. In addition, in order to reduce the manufacturing cost, the reduction of the apparatus cost, the reduction of the running cost, and the improvement of the material yield of the large-sized panel have become significant problems in addition to the increase of the efficiency due to the enlargement of the substrate size.

Further, organic EL and field emission displays have been already marketed, and the reduction of the device cost and the reduction of the running cost have become significant problems in the production of these new-generation display elements.

Patent document 1 discloses a method for manufacturing a liquid crystal display element using a roll-shaped flexible substrate as a measure for reducing the device cost and the running cost of the liquid crystal display element.

Patent document 2 discloses a display defect detection method for detecting a defect by selecting a resolution in accordance with the type of various display defects such as uneven rubbing and uneven gap from an image of a liquid crystal panel captured with high precision by using a line sensor.

Patent document 1: japanese patent No. 3698749

Patent document 2: japanese patent laid-open publication No. 2004-279239

As in the example disclosed in patent document 1, the roll-shaped flexible substrate is long as several tens to several hundreds of meters, and therefore, when a fatal defective portion occurs, the production line needs to be stopped. On the other hand, there are also defects which can be repaired very simply.

Patent document 2 selects the resolution of an image for a finished product of a liquid crystal display element to be a final product according to the type of a display defect, but it is not determined whether or not the defect is a defect that needs to be repaired, only for the purpose of finding the defect.

Disclosure of Invention

Accordingly, the present invention provides a defect detection method for a display device and a defect detection apparatus for a display device, which can find a defective portion such as wiring of a display element during a manufacturing process and can determine whether the defect can be corrected in a repair line or the defect requires a line stop.

A defect detection method for a display device according to a first aspect includes: the display device includes a measurement unit that measures a feature amount for each local region of the display device, a first determination unit that determines whether or not the measured feature amount of each local region is within a first range, a calculation unit that calculates a difference between the feature amount of the local region and a feature amount of a local region around the local region for the region determined to be within the first range in the first determination unit, and a second determination unit that determines whether or not the difference calculated by the calculation unit is within a second range.

According to this defect detection method, even if the feature amount of the local area falls within the first range, if the local area is largely different from the local area in the periphery thereof, the eyes of a person viewing the display device recognize it as uneven brightness. Thus, the difference between the feature value of the local area and the feature value of the local area around the local area is calculated, and a defect causing the luminance unevenness is detected.

A defect detection method for a display device according to a second aspect includes: the method includes a defect counting step of counting feature amounts for each local region of the display device and determining a region as a defective region based on the feature amount count of the measured region, a step of stopping a production line of the display device when the number of defects is greater than a first threshold value in the defect counting step, a defect density calculating step of calculating a defect density within a given area when the number of defects is less than the first threshold value in the defect counting step, and a step of stopping the production line of the display device when the defect density is greater than a second threshold value in the defect density calculating step.

The defect detection method of a display element of the second viewpoint determines whether or not to stop the production line by calculating the defect density of the display device. If the defect density is high, the defective area is concentrated in one portion. Since it is impossible to cope with only repairing the portion in this case, the defect density is used as a criterion for the determination.

A defect detection device for a display device according to a third aspect includes: a feature amount determination unit that measures a feature amount for each local region of the display device and determines whether the measured feature amount of the region is within a first range; and a difference determination unit that calculates a difference between the feature amount of the local region determined to be within the first range by the feature amount determination unit and the feature amount of the local region in the periphery of the local region, and determines whether or not the difference is within a second range.

Even if the feature amount of the local region falls within the first range, if the local region is largely different from the local region in the periphery thereof, the eyes of a person viewing the display device may regard it as uneven brightness. Thus, the defect detection device of the display device calculates the difference between the feature amount of the local region and the feature amount of the local region around the local region, and detects a defect causing the luminance unevenness.

A defect detection device for a display device according to a fourth aspect includes: a defect number determination unit that measures a feature amount for each local region of the display device, determines the number of defects in the local region of the defect region based on the measured feature amount of the local region, and determines whether the number of defects is greater than a first threshold value; and a defect density determination unit that calculates the number of defects in the predetermined area when the defect number determination unit determines that the number of defects is smaller than the first threshold value, and determines whether or not the number of defects in the predetermined area is larger than the second threshold value.

The number of defects occupied in a given area being greater than the second threshold means that the defective regions are concentrated in one place. Since in this case, even if the portion is repaired, there are often cases where the repaired portion is conspicuous, the defect detecting apparatus of the display device of the fourth viewpoint detects the defect density.

The defect detection device for a display device according to the fifth aspect includes a defect density determination unit that measures a feature amount for each local region of the display device, determines the number of defects in the local region of the defective region based on the number of measured feature amounts of the local region, calculates the number of defects occupied in the predetermined area, and determines whether or not the number of defects occupied in the predetermined area is greater than a second threshold value.

The defect detecting apparatus of the display device of the fifth aspect can perform defect detection of the display device by detecting the defect density.

The defect detection method and the defect detection device of the display device of the invention not only can find out the defect position of the wiring of the display element in the manufacturing process, but also can judge whether the defect can be corrected on a repair line or the defect of the production line is required to be stopped.

Drawings

Fig. 1 is a schematic diagram showing a configuration of a manufacturing apparatus 100 for manufacturing an organic EL element on a flexible substrate FB.

Fig. 2 is a conceptual diagram of the first mark AM and the second mark BM for observing diffraction lattices in the electrode forming step of the manufacturing apparatus 100 for an organic EL element.

Fig. 3 is a diagram showing a state of a bottom-contact organic EL device in which a light-emitting layer IR and an ITO electrode are formed.

Fig. 4 is a diagram illustrating the first observation device CH1 in the wall forming process.

Fig. 5 is a diagram illustrating the second observation device CH2 in the electrode forming step.

Fig. 6 is a diagram illustrating the fifth observation device CH5 in the step of forming the dicing device 30 with the distance between the source electrode S and the drain electrode D.

Fig. 7A is a perspective view from the fifth alignment sensor CA5 to the sixth observation device CH 6.

Fig. 7B is a flowchart in the steps of applying the organic semiconductor ink of fig. 7A and storing the repaired portion.

Fig. 8A shows data Dn (m, n) of the matrix MAT and the matrix MAX displayed in a superimposed manner on the organic EL element 50 observed by the fifth observation device CH 5.

Fig. 8B is a defect determination flowchart for specifying a defective region based on the data Dn (m, n) of the rank MAX.

Fig. 8C is another flowchart different from the defect determination flowchart of fig. 8B.

Fig. 9A is a conceptual diagram illustrating a repair apparatus 110 for batch-repairing the organic EL device 50 having the repair site.

FIG. 9B is a repair flow diagram of the batch-processed repair device 110 shown in FIG. 9A.

Fig. 10 is a schematic view showing a manufacturing and repairing apparatus 200 for inspecting a defective portion and repairing the defective portion on line while manufacturing the organic EL element 50.

Wherein the mark indicates that: 10. a platen roller 11, a mold for micro-imprinting, 15, a heat transfer roller, 20, a droplet applying device (20BL... a droplet applying device for a blue light emitting layer, 20g.. a droplet applying device for a gate, 20Gr... a droplet applying device for a green light emitting layer, 20i.. a droplet applying device for an insulating layer, 20Re... a droplet applying device for a red light emitting layer, 20IT... a droplet applying device for an ITO electrode, 20OS... an organic semiconductor droplet applying device, 20SD... a droplet applying device for a source and a drain and for a pixel electrode), 22, a nozzle, 30, a cutting device, 130, a cutting device for repair, 50, an organic EL element, 90, a main control section, 95, a position counting section, 96, a repair section (961.. characteristic quantity determining section, 962.. difference determining section, 963.. a defect number determining section, 964.. defect density determination section), 97, a memory section, 190, a repair main control section, 100, an organic EL element manufacturing apparatus, 110, an organic EL element repair apparatus, 120, a repair droplet application apparatus (120g.. gate repair droplet application apparatus, 120i.. insulating layer repair droplet application apparatus, 120OS.. organic semiconductor repair droplet application apparatus, 120SD.. source and drain repair droplet application apparatus, and pixel electrode application apparatus), 160, a partition wall repair dispenser, 170, a laser fusing apparatus, AM, a first mark (alignment mark), BA, partition wall, BK, a heat treatment apparatus, CA, alignment sensor, D, drain electrode, FB, sheet substrate, G, gate electrode, GBL, gate bus line, I, gate insulating layer, IR, light emitting layer, ITO, transparent electrode, LAM, illumination light source, LEN, LENs, LED, laser emitting diode, LL, laser, OS, organic semiconductor layer, P, pixel electrode, PRT, printing device, RL, supply roll, RR, roller, S, source electrode, SBL, source bus.

Detailed Description

The manufacturing apparatus for a display element described in this embodiment mode is applicable to an organic EL element, a liquid crystal display element, or a field emission display. An apparatus and a method for manufacturing an organic EL element will be described as a representative example.

Apparatus for manufacturing organic EL element

In the manufacture of organic EL devices, it is necessary to form a substrate on which Thin Film Transistors (TFTs) and pixel electrodes are formed. In order to accurately form 1 or more organic compound layers (light-emitting element layers) including a light-emitting layer on the pixel electrode on the substrate, it is necessary to easily and accurately form a partition wall BA (bank layer) in a boundary region of the pixel electrode.

Fig. 1 is a schematic diagram showing a configuration of a manufacturing apparatus 100 for manufacturing an organic EL device 50 having a pixel electrode, a light-emitting layer, and the like on a flexible substrate.

The manufacturing apparatus 100 for organic EL elements includes a supply roll RL for feeding out a band-shaped flexible sheet substrate FB wound in a roll. For example, the sheet substrate FB has a length of, for example, 200m or more. The supply roller RL rotates at a predetermined speed to convey the sheet substrate FB in the X-axis direction (longitudinal direction) as the conveyance direction. The manufacturing apparatus 100 for organic EL elements may be provided with rollers RR at a plurality of positions, and the sheet substrate FB may be conveyed in the X-axis direction by the rotation of the rollers RR. The roller RR may be a rubber roller that sandwiches the sheet substrate FB from both sides, or a roller RR with a ratchet if the sheet substrate FB has a perforation.

The manufacturing apparatus 100 for organic EL elements includes a winding roll RE for winding the sheet substrate FB in a roll shape in the final step. In addition, the winding drum RE winds the sheet substrate FB at a predetermined speed in synchronization with the supply drum RL and the roller RR for processing in the defective portion repairing process.

< step of Forming Barrier wall >

The sheet substrate FB fed out from the supply roller RL first enters a partition forming step of forming partitions BA on the sheet substrate FB. In the partition forming step, the sheet substrate FB is pressed by the platen roller 10, and heated to a temperature equal to or higher than the glass transition temperature by the heat transfer roller 15 while maintaining the shape of the pressed partition BA. Thereby, the mold shape formed on the roller surface of the platen roller 10 is transferred onto the sheet substrate FB.

The roll surface of the platen roll 10 is finished to a mirror surface, and a fine platen 11 made of a material such as SiC or Ta is attached to the roll surface. The micro imprint mold 11 includes a stamper for wiring of a thin film transistor and a stamper for a display pixel. The minute imprinting stamp 11 includes stamps for the first mark AM and the second mark BM, in order to form the first mark AM and the second mark BM (see fig. 2) on both sides in the width direction of the tape-shaped flexible sheet substrate FB.

Since the first mark AM and the second mark BM are formed simultaneously with the formation of the partition BA for the wiring of the thin film transistor and the formation of the partition BA for the display pixel, the positional accuracy of the partition BA and the first mark AM and the second mark BM becomes the same as the positional accuracy of the micro-imprint mold 11.

A first observation device CH1 is disposed downstream of the platen roller 10 in the X-axis direction. The first observation device CH1 observes whether or not the partition BA for the display pixel and the wiring of the thin film transistor are formed correctly. The first observation device CH1 is composed of a camera or a laser length measuring instrument, which is composed of a one-dimensional CCD or a two-dimensional CCD. A first alignment sensor CA1 is disposed downstream of the first observation device CH 1.

< electrode Forming Process >

The sheet substrate FB proceeds to the electrode forming step if it further advances in the X-axis direction after the first mark AM and the second mark BM are detected by the first alignment sensor CA 1.

As the Thin Film Transistor (TFT), either an inorganic semiconductor system or an organic semiconductor system may be used. If a thin film transistor is formed using the organic semiconductor, the thin film transistor can be formed by a printing technique or a droplet application technique.

Among thin film transistors using an organic semiconductor, a Field Effect Transistor (FET) is particularly preferable. In the electrode forming step of fig. 1, a bottom gate type organic EL element 50 of an FET is described. After the gate electrode G, the gate insulating layer I, the source electrode S, the drain electrode D, and the pixel electrode P are formed on the sheet substrate FB, the organic semiconductor layer OS is formed.

In the electrode forming step, the droplet applying apparatus 20 is used which applies the liquid onto the sheet substrate FB by receiving the positional information from the first alignment sensor CA 1. The droplet applying device 20 may be an ink-jet type or a dispenser type. Examples of the ink jet system include a charge control system, a pressure vibration system, an electromechanical conversion system, an electrothermal conversion system, and an electrostatic suction system. The droplet application method is less wasteful in the use of the material, and can reliably dispose a required amount of the material at a required position. Hereinafter, the droplet applying device 20G for the gate electrode G is distinguished from the droplet applying device 20G for the gate by adding G or the like to the end. The same applies to the other droplet applying apparatuses 20. The amount of one drop of the metal ink MI applied by the droplet application method is, for example, 1 to 300 nanograms.

The droplet applying device for a gate 20G applies the metal ink MI to the partition walls BA of the gate bus line GBL. Next, the metal ink MI is dried or calcined (baked) by hot air, radiant heat such as far infrared rays, or the like in the heat processing apparatus BK. The gate electrode G is formed by these processes. The metal ink MI is a liquid in which a conductor having a particle diameter of about 5nm is stably dispersed in a solvent at room temperature, and carbon, silver (Ag), gold (Au), or the like can be used as the conductor.

A second observation device CH2 is disposed downstream of the droplet applying device for a gate 20G. The second observation device CH2 observes whether or not the metal ink MI is applied to the gate bus line GBL and functions as a conductive line. The second observation device CH2 is constituted by a camera composed of a one-dimensional CCD or a two-dimensional CCD. A second alignment sensor CA2 is arranged downstream of the second observation device CH 2.

Next, the droplet applying device 20I for the insulating layer receives the positional information from the second alignment sensor CA2, and applies the electrically insulating ink of the polyimide-based resin or the urethane-based resin to the switch section. Thereafter, the electrically insulating ink is dried and cured by hot air, radiant heat such as far infrared rays, or the like in the heat processing apparatus BK. The gate insulating layer I is formed using these processes.

A third observation device CH3 is disposed downstream of the droplet applying device 20I for the insulating layer. The third observation device CH3 observes whether or not the electrically insulating ink is applied to an accurate position. The third observation device CH3 is also constituted by a camera composed of a one-dimensional CCD or a two-dimensional CCD. A third alignment sensor CA3 is disposed downstream of the third observation device CH 3.

Then, the droplet applying device 20SD for the source and drain and the pixel electrode receives the positional information from the third alignment sensor CA3, and applies the metal ink MI to the inside of the partition wall BA of the source bus line SBL and the inside of the partition wall BA of the pixel electrode P. Next, the metal ink MI is dried or fired (baked) in the heat processing apparatus BK. By these processes, an electrode in a state where the source electrode S, the drain electrode D, and the pixel electrode P are connected is formed.

A fourth observation device CH4 is disposed downstream of the droplet applying device 20SD for the source and drain and the pixel electrode. The fourth observation device CH4 observes whether or not the metal ink MI is applied to the correct position. The fourth observation device CH4 is also constituted by a camera composed of a one-dimensional CCD or a two-dimensional CCD. A fourth alignment sensor CA4 is disposed downstream of the fourth observation device CH 4.

Next, the positional information is received from the fourth alignment sensor CA4 to cut the source electrode S and the drain electrode D connected to each other with the cutting device 30. A femtosecond laser is preferred as the cutting device 30. A femtosecond laser irradiation unit using a titanium sapphire laser irradiates laser LL with a wavelength of 760nm while swinging back and forth and left and right at a pulse of 10KHz to 40 KHz.

Since the cutting device 30 uses a femtosecond laser, it is possible to perform processing of a submicron order and accurately cut the distance between the source electrode S and the drain electrode D that determines the performance of the field effect transistor. The source electrode S is spaced from the drain electrode D by about 20 μm to 30 μm. The electrode for separating the source electrode S from the drain electrode D is formed by this cutting process. In addition to the femtosecond laser, a carbon dioxide gas laser, a green laser, or the like may be used. In addition, the cutting may be performed mechanically by a dicing saw (dicing saw) other than the laser.

A fifth observation device CH5 is disposed downstream of the cutting device 30. The fifth observation device CH5 observes whether or not the space is correctly formed in the source electrode S and the drain electrode D. The fifth observation device CH5 is also constituted by a camera composed of a one-dimensional CCD or a two-dimensional CCD. A fifth registration sensor CA5 is disposed downstream of the fifth observation device CH 5.

Next, the organic semiconductor droplet application device 20OS receives the positional information from the fifth alignment sensor CA5 and applies the organic semiconductor ink at the switching portion between the source electrode S and the drain electrode D. Thereafter, the organic semiconductor ink is dried or calcined by hot air, radiant heat such as far infrared rays, or the like in the heat processing apparatus BK. With these processes, the organic semiconductor layer OS is formed.

The compound forming the organic semiconductor ink may be a single crystal material, an amorphous material, a low molecular weight material, or a high molecular weight material. Particularly preferred examples of the material include single crystals of condensed ring aromatic hydrocarbon compounds represented by pentacene (pentacene), triphenylene (triphenylene), anthracene, and the like, and pi-conjugated polymers.

A sixth observation device CH6 is disposed downstream of the organic semiconductor droplet application device 20OS. The sixth observation device CH6 observes whether or not the organic semiconductor ink is applied to the correct position. The sixth observation device CH6 is also constituted by a camera composed of a one-dimensional CCD or a two-dimensional CCD. A sixth registration sensor CA6 is disposed downstream of the sixth observation device CH 6.

< light-emitting layer Forming Process >

The manufacturing apparatus 100 for an organic El element continues the step of forming the light-emitting layer IR of the organic El element on the pixel electrode P.

The droplet applying device 20 is used in the light emitting layer forming step. As described above, an ink-jet system or a dispenser system may be used. Although not described in detail in this embodiment, a printing roll may be used to form the light-emitting layer.

The light-emitting layer IR contains a host phase compound and a phosphorescent compound (also referred to as a phosphorescent compound). The host phase compound refers to a compound contained in the light-emitting layer. The phosphorescent compound is a compound in which light emission from an excited triplet state can be observed, and phosphorescence is emitted at room temperature.

The droplet applying device 20Re for the red light-emitting layer receives positional information from the sixth alignment sensor CA6, applies the R solution to the pixel electrode P, and forms a film so that the thickness after drying becomes 100 nm. The R solution is a solution prepared by dissolving a red doping material in 1, 2-dichloroethane in polyvinyl carbazole (PVK) as a main phase material.

Next, the droplet applying device 20Gr for the green light emitting layer receives positional information from the sixth alignment sensor CA6 and applies the G solution to the pixel electrode P. The G solution is a solution of green dopant material dissolved in 1, 2-dichloroethane in the main phase material PVK.

The droplet applying device 20BL for the blue light emitting layer receives positional information from the sixth alignment sensor CA6 and applies the B solution to the pixel electrode P. The solution B adopts a solution of dissolving a blue doping material in 1, 2-dichloroethane in a main phase material PVK.

Thereafter, the light-emitting layer solution is dried and cured by hot air, radiant heat such as far infrared rays, or the like in the heat treatment device BK.

A seventh observation device CH7 is disposed downstream of the light-emitting layer formation step. The seventh observation device CH7 observes whether the light emitting layer is formed properly. A seventh registration sensor CA7 is disposed downstream of the seventh observation device CH 7.

Next, the droplet applying device 20I for the insulating layer receives the position information from the seventh registration sensor CA7, and applies an electrically insulating ink of a polyimide-based resin or a urethane-based resin to a part of the gate bus line GBL or the source bus line SBL so as not to short-circuit the transparent electrode ITO described later. Thereafter, the light-emitting layer solution is dried and cured by hot air, radiant heat such as far infrared rays, or the like in the heat treatment device BK.

An eighth observation device CH8 is disposed downstream of the droplet applying device 20I for the insulating layer. The eighth observation device CH8 observes whether or not an electrically insulating ink is applied. An eighth registration sensor CA8 is disposed downstream of the eighth observation device CH 8.

Thereafter, the droplet applying apparatus 20IT for ITO electrode receives position information from the eighth alignment sensor CA8, and applies ITO (Indium Tin Oxide) ink on the red, green, and blue light emitting layers. The ITO ink is In indium oxide (In)₂O₃) In which tin oxide (SnO) of a few percent is added₂) The compound of (1), wherein the electrode is transparent. In addition, IDIXO (In) may be used₂O₃ZnO), or the like, and can be used as a material for forming a transparent conductive film. The transmittance of the transparent conductive film is preferably 90% or more. Thereafter, the ITO ink is dried and cured by hot air, radiant heat such as far infrared rays, or the like in the heat processing apparatus BK.

A ninth observation device CH9 is disposed downstream of the droplet applying device 20IT for ITO electrodes. The ninth observation device CH9 observes whether or not the electrically insulating ink is applied.

In addition, the organic EL element 50 may be provided with a hole transport layer and an electron transport layer, and these layers may be formed by a printing technique or a droplet application technique.

The manufacturing apparatus 100 for organic EL elements includes a main control section 90. Signals observed in the first through ninth observation devices CH1 through CH9 and alignment signals in the first through eighth alignment sensors CA1 through CA8 are transmitted to the main control section 90. The main control section 90 controls the speed of the supply roller RL and the roller RR.

Formation of alignment and count marks

The sheet substrate FB is stretched in the X-axis direction and the Y-axis direction by passing through the thermal transfer roller 15 and the thermal processing apparatus BK. For this reason, the manufacturing apparatus 100 for organic EL elements disposes the first alignment sensor CA1 downstream of the thermal transfer roller 15, and disposes the second alignment sensor CA2 to the eighth alignment sensor CA8 after the thermal processing apparatus BK. In addition, when a defective portion is identified and removed or repaired when a defective portion occurs such as a defective stamping or a defective coating, the defective portion must also be identified. Therefore, in the present embodiment, the first mark AM is also used as a count mark for confirming the position in the X axis direction.

Control of the electrode forming process in the manufacturing apparatus 100 for an organic EL element will be described with reference to fig. 2.

In fig. 2(a), the sheet substrate FB has at least one first mark AM on each of both sides of the sheet substrate FB with respect to the partition BA for wiring and the partition BA for pixels of the thin film transistors arranged in the Y-axis direction, which is the width direction of the sheet substrate FB. For example, 1 second mark BM is formed adjacent to the first mark AM with respect to 50 first marks AM. Since the sheet substrate FB is, for example, as long as 200m, the second mark BM is provided to easily confirm which row of the partition BA for the wiring of the thin film transistor and which pixel partition BA are provided at regular intervals. The pair of first alignment sensors CA1 detect the first mark AM and the second mark BM, and send the detection results to the main control unit 90.

The micro imprint mold 11 defines a positional relationship between the first mark AM and the second mark BM and the gate bus line GBL and the source bus line SBL of the field effect transistor.

Therefore, the main control section 90 can detect the shift in the X-axis direction, the shift in the Y-axis direction, and the θ rotation by detecting the pair of first marks AM. In addition, the first mark AM may be provided not only on both sides of the sheet substrate FB but also in the central region.

The first alignment sensor CA1 observes the sheet substrate FB conveyed in the X-axis direction at any time, and sends an image of the first mark AM to the main control section 90. The main control unit 90 includes a position counting unit 95 therein, and the position counting unit 95 counts the number of rows of the organic EL elements 50 arranged in the Y-axis direction among the organic EL elements 50 formed on the sheet substrate FB. Since the rotation of the roller RR is controlled by the main control portion 90. Therefore, the position where the organic EL elements 50 in the several rows are sent to the droplet applying device for gate 20G or the position where the organic EL elements 50 in the several rows are sent to the second observation device CH2 can be grasped.

The position counting unit 95 checks whether or not there is an error count of the number of lines using the first mark AM based on the image of the second mark BM sent from the first alignment sensor CA 1. For example, it is possible to prevent a situation where the number of lines cannot be accurately grasped due to a defect in the first mark AM of the micro-imprint mold 11.

The droplet applying device for a gate 20G is arranged in the Y axis direction, and a plurality of rows of nozzles 22 are also arranged in the X axis direction. The gate droplet applying device 20G switches the timing of applying the metal ink MI from the nozzle 22 and the nozzle 22 for applying the metal ink MI, based on a position signal from the main control section 90 by the first alignment sensor CA 1.

A heat treatment device BK is disposed downstream of the droplet applying device for a gate 20G, and the heat treatment device BK is dried using the metal ink MI applied by the droplet applying device for a gate 20G. A second observation device CH2 is disposed downstream of the heat processing device BK.

The second observation device CH2 transmits the observed image signal to the main control section 90, and compares the area where the metal ink MI needs to be applied by the gate droplet applying device 20G with the observed image signal in the main control section 90, thereby specifying the defective portion of the application of the metal ink MI. The defective portion is specified by image processing in the Y-axis direction as to which position of the organic EL element 50 in the several columns is located, or as to a position several mm away from the first mark AM. The defective portion in the X-axis direction is specified by the position counting unit 95 as to which position of the organic EL element 50 in the row is among the organic EL elements 50 in the several rows.

The first mark AM and the second mark BM are formed by diffraction lattices GT. The first mark AM is a dot-shaped diffraction grating GT arranged in the X-axis direction and the Y-axis direction as shown in the upper stage of fig. 2 (b). The cross section of the dot-shaped diffraction grating GT has a shape shown in the lower part of fig. 2 (b). Although not shown in the drawings, the second mark BM is also a dot-like diffraction lattice GT similar to the first mark AM.

Fig. 2(c) shows an alignment sensor CA for detecting the first mark AM or the second mark BM. In order to detect the first mark AM or the second mark BM, coherent light such as He — Ne laser (λ 0.6328 μm) is irradiated to the first mark AM or the second mark BM. Thereafter, ± n-order images (n 1, 2, and..) from the point-like diffraction grid GT via the LENs LEN are detected.

When the interval of the dot-shaped diffraction lattices GT, that is, the lattice constant is L, the wavelength of the coherent light is λ, and the angle between the irradiation angle of the coherent light and one direction of the alignment sensor CA is θ, a relationship of Lsin θ ═ n λ (n ═ 1, ± 2,. and..) is established.

As shown in the graph shown in fig. 2(c), the alignment sensor CA detects a wave-shaped signal at a portion where the dot-shaped diffraction grating GT exists, and does not detect a signal at a portion where there is no diffraction grating. Thus, the position counting unit 95 digitizes the detected signal, and counts the number of rows of the organic EL elements 50 arranged in the Y-axis direction among the organic EL elements 50 already formed on the sheet substrate FB. Therefore, the position of the organic EL element 50 can be accurately grasped at high speed. Further, since the first mark AM or the second mark BM is a diffraction lattice, it is hardly affected by dirt or the like.

Organic EL element 50 formed in a partition wall of a field effect transistor

Fig. 3 is a diagram showing a state of a bottom-contact organic EL device in which a light-emitting layer IR and an ITO electrode are formed. The organic EL element 50 includes a gate electrode G, a gate insulating layer I, and a pixel electrode P, and an organic semiconductor layer OS, a light-emitting layer IR, and an ITO electrode formed on a sheet substrate FB.

In fig. 3, the sheet substrate FB is made of a heat-resistant resin film. Specifically, as the sheet substrate FB, a polyethylene resin, a polypropylene resin, a polyester resin, an ethylene-vinyl copolymer resin, a polyvinyl chloride resin, a cellulose resin, a polyamide resin, a polyimide resin, a polycarbonate resin, a polystyrene resin, a vinyl acetate resin, or the like can be used.

As described above, the sheet substrate FB is subjected to the heat treatment of the thermal transfer in the partition wall forming step, and the various inks are heated to about 200 ℃. In order to be able to change the size even when heated, the smaller the thermal expansion coefficient of the sheet substrate FB, the better. For example, an inorganic filler may be mixed into the resin film to reduce the thermal expansion coefficient. Examples of the inorganic filler include titanium oxide, zinc oxide, aluminum oxide, and silicon oxide.

As shown in fig. 3(b) and (c), the presence of the partition walls BA enables accurate and uniform formation of electrodes, light-emitting layers, and the like. Since the sheet substrate FB is conveyed at high speed in the X-axis direction (longitudinal direction) by the rollers RR, even when the droplet applying device 20 may not apply droplets correctly, correct and uniform electrodes, light emitting layers, and the like can be formed.

The manufacturing apparatus 100 can manufacture various field effect transistors other than the field effect transistor shown in fig. 3. For example, even a top gate type field effect transistor can be formed by changing the order of applying ink to the thin film substrate FB.

Observation device

Next, various observation devices CH will be described with reference to fig. 4 to 7.

Fig. 4 is a diagram illustrating the first observation device CH1 in the partition wall forming step. Fig. 4(a-1) is a plan view of the sheet substrate FB imprinted by the micro imprinting stamp 11. Fig. 4(a-2) is a c-c sectional view, and (b) is a conceptual view of the partition wall BA observed by the first observation device CH 1.

The partition BA of the sheet substrate FB formed by the micro-imprint mold 11 serves as a base for wiring and the like, and it is important whether the partition BA is formed correctly at the time of applying the metal ink BI in the subsequent step. As shown in fig. 4(a-2), although the partition walls BA like the solid lines should be formed, dust may adhere to the fine imprint mold 11 or the sheet substrate FB, and thus a defective partition wall E-BA having an incorrect shape may be formed. This makes it impossible to accurately form the grooves GR between the partition walls BA to which the metal ink MI is applied.

The first observation device CH1 shown in fig. 4(b) is, for example, a laser measurement device, and is composed of a laser light source LED, a LENs LEN, and a sensor SEN. In this way, the laser light source LED is irradiated to the sheet substrate FB, and the reflected light is received by the sensor SEN to measure the height of the partition wall BA.

Fig. 5 is a diagram illustrating the second observation device CH2 in the electrode forming step. FIG. 5(a-1) is a plan view of the sheet substrate FB after the completion of the electrode forming step. Fig. 5(a-2) is a c-c sectional view thereof, and (b) is a conceptual view of the gate bus line GBL observed by the second observation device CH 2.

Originally, when the metal ink MI is accurately applied to the groove portions GR between the partition walls BA for the gate bus lines GBL as shown in fig. 5(a-1) and dried or fired in the heat processing apparatus BK, the metal ink MI becomes a thin film as shown in fig. 5 (a-2). However, due to a failure of the nozzle 22 of the gate droplet applying apparatus 20G, the metal ink MI may be applied to the partition wall BA or may be applied to a portion different from the design.

The second observation device CH2 shown in fig. 5(b) is composed of a one-dimensional or two-dimensional camera, and the second observation device CH2 illuminates the lower surface of the sheet substrate FB with a lamp LAM, for example, and observes the transmitted light. As shown in fig. 5(b), the state in which the metal ink MI is applied to the partition wall BA can be observed. Further, since the sheet substrate FB is mostly made of a material that is permeable, it is easier to observe than reflected light if the lamp LAM is disposed below the sheet substrate FB before the first half of the process (the process of observation by the fourth observation device CH 4) is completed.

Fig. 6 is a diagram illustrating the fifth observation device CH5 in the step of forming the cutting device 30 having the distance between the source electrode S and the drain electrode D. Fig. 6(a) is a plan view of the cut sheet substrate FB. Fig. 6(b) is a c-c sectional view thereof, which is a conceptual view of the cut-off section observed by a fifth observation device CH 5.

A gate electrode G and a gate insulating layer I have been formed around the source electrode S and the drain electrode D. Thus, the fifth observation device CH5 hardly observes the gap between the source electrode S and the drain electrode D with transmitted light. Therefore, the lamp LAM is disposed around the fifth observation device CH5 to observe the surroundings of the source electrode S and the drain electrode D.

Location of repair

Fig. 7A is a perspective view from the fifth alignment sensor CA5 to the fifth observation device CH 5. The repair site is specified basically in the same manner in other steps, but the observation of the interval between the source electrode S and the drain electrode D by the cutting device 30 will be described as a representative example.

The fourth alignment sensor CA4 is connected to the main control section 90, and the fourth alignment sensor CA4 transmits the image signal of the first mark AM to the main control section 90. The main control section 90 measures the position and inclination of the sheet substrate FB in the Y axis direction based on the image signal, and measures the extension of the sheet substrate FB in the Y axis direction by measuring the first marks AM on both sides of the sheet substrate FB.

Since the main control section 90 also controls the rotation of the roller RR, it is also possible to grasp the moving speed of the sheet substrate FB in the X-axis direction, and output a signal to the cutting device 30 based on the first mark AM to form the gap between the source electrode S and the drain electrode D of each organic EL element 50. The laser beam is irradiated from the cutting device 30, and the direction of the laser beam is adjusted to a predetermined position by a galvano-mirror or the like.

The main control section 90 includes therein a position counting section 95 for counting the position in the X axis direction, a repair site specifying section 96 for specifying a defective site, that is, a repair site to be repaired, and a storage section 97 for storing the design size, the repair site, and the like of the organic EL element 50. The repair site specifying unit 96 includes: a feature amount determination unit 961, a difference determination unit 962, a defect number determination unit 963, and a defect density determination unit 964.

The fifth observation device CH5 includes a LENs LEN and a one-dimensional CCD therein, and transmits an image signal of the one-dimensional CCD to the main control unit 90. The main control section 90 can grasp the state of the gap between the source electrode S and the drain electrode D formed by the cutting device 30. The repair site specifying section 96 compares the design value stored in the storage section 96, that is, the gap between the source electrode S and the drain electrode D; a different portion from the gap between the source electrode S and the drain electrode D actually coated with the cutting device 30 is specified as a defective portion. The repair portion specifying portion 96 can specify the distance (μm) of the defective portion in the X-axis direction and the Y-axis direction with respect to the first mark AM, and also specify the organic EL element 50 in the several rows by the count of the position control portion 95. The specified repair site is stored in the storage unit 97, and data of the repair site is used in the repair process.

Fig. 7B is a flowchart of the step of forming the gap between the source electrode S and the drain electrode D and the step of storing the repair portion in fig. 7A.

In step P11, the alignment sensor CA5 captures the first mark AM and transmits an image signal to the main control section 90.

In step P12, the main control section 90 calculates the position of the first mark AM, and the position counting section 95 counts the number of lines of the organic EL elements 50. The first mark AM is used by the cut-off device 30 in the positioning of the source electrode S and the drain electrode D, and may also be used for the number of rows of the specific organic EL element 50. Further, the number of rows of the organic EL elements 50 can also be specified by photographing the second mark BM illustrated in fig. 2 by the fourth alignment sensor CA 4.

In step P13, the sheet substrate FB is irradiated with laser light from the cutting device 30 based on the position of the first mark AM and the gap position between the source electrode S and the drain electrode D stored in the storage unit 97.

In step P14, the fifth observation device CH5 transmits an image signal of the gap state of the source electrode S and the drain electrode D to the repair site specifying part 96. Since the sheet substrate FB moves in the X-axis direction, the fifth observation device CH5 may be a one-dimensional CCD extending in the Y-axis direction. When there is a lot of noise in the image signal in the gap between the source electrode S and the drain electrode D because the sheet substrate FB moves at a high speed, a two-dimensional CCD to which a frame accumulation type memory for shifting the accumulation portion of the CCD according to the speed at which the sheet substrate FB moves is connected may be prepared. This method is one of CCD readout methods generally called tdi (time delay integration) method.

Next, in step P15, the repair site specifying unit 96 compares the image signals of the actual gap state with the gap between the source electrode S and the drain electrode D stored in the storage unit 97, and specifies the defective site. The specification of the defective portion is described in detail in fig. 8A, 8B, and 8C.

In step P16, the defective portion is stored as a repair portion to be repaired in the storage portion 97 as the number of lines and the distance from the position of the first mark AM.

Fig. 8a (a) shows the organic EL element 50 observed by the fifth observation device CH5 and the matrix MAT displayed so as to overlap with the organic EL element.

The one-dimensional CCD of the fifth observation device CH5 can output image data at each pixel pitch in the Y-axis direction, and in addition, since the sheet substrate FB is moved at a constant speed in the X-axis direction, by adjusting the sampling timing, image data in the X-axis direction of the sheet substrate FB can be output at each given pitch. That is, image data of a local region subdivided with respect to the organic EL element 50 can be obtained. The image data is stored in the storage unit 97 as a matrix MAT.

As shown in fig. 8a (a), since the first mark AM is formed on the sheet substrate FB, the image data of the subdivided partial region is associated with the position information in the X-axis direction and the Y-axis direction. Further, the size of the subdivided partial region can be changed by changing the pixel pitch of the one-dimensional CCD of the fifth observation device CH5 shown in fig. 7A, the magnification of the LENs LEN, and the like.

Fig. 8a (b) is a diagram showing the subdivided local regions stored as the matrix MAT in the storage unit 97. The subdivided local area is stored in the storage unit 97 as data (Dn (m, n)) of a matrix MAT of k rows and h columns together with the position information of the area. However, it is not necessary to define the matrix MAX of k rows and h columns in accordance with the image pitch of the one-dimensional CCD. Since the fifth observation device CH5 mainly aims to observe the gap between the source electrode S and the drain electrode D, it is sufficient to configure 1 matrix for each pixel of the organic EL element 50 and store the gap between the source electrode S and the drain electrode D in the storage unit 97 together with the positional information of the local area.

The repair portion specification unit 96 specifies the defect region based on the data (Dn (m, n)) of the matrix MAX stored in the storage unit 97. The specificity for this defective area will be described in detail in fig. 8B.

Fig. 8B is a defect determination flowchart for determining whether or not the production line using the manufacturing apparatus 100 of fig. 1 is stopped or whether or not the repair is performed by the repair apparatus 110 described with reference to fig. 9A or the like, based on the data Dn (m, n) of the rank MAX to specify the defective region.

In step P31, data Dn (m, n) of the matrix MAT of k rows and h columns is set. In this flowchart, for the sake of simplifying the description, 1 row and 1 column of data Dn (m, n) are assigned to 1 pixel (each of the gate electrode G, the source electrode S, the drain electrode D, and the pixel electrode P is 1) of the organic EL element.

In step P32, the organic EL element 50 is observed with the fifth observation device CH 5. This sends the data Dn (m, n) of the matrix MAT to the repair site specifying section 96. The fifth observation device CH5 observes the gap between the source electrode S and the drain electrode D, and therefore is a gap that is a characteristic amount observed by the fifth observation device CH 5. Dn (m, n) is size data with a gap of 25 μm, for example, and is transmitted to the repair site specifying unit 96 with a gap of 25 μm.

In step P33, the feature amount determination section 961 (see fig. 7A) of the repair site specification section 96 determines whether Dn (m, n) as the gap data is within the first range a 1. The first range A1 is, for example, 20 μm to 30 μm. The feature amount determination unit 961 proceeds to step P34 if the data Dn (m, n) is 25 μm, and proceeds to step P36 if the data Dn (m, n) is 15 μm or 35 μm, outside the first range a 1.

In step P34, the difference determination unit 962 compares the data Dn (m, n) with the data of the peripheral area. Specifically, a difference between data Dn (m, n) as a feature amount and data Dn (m-1, n) of pixels of the first 1 line is calculated. That is, Δ Dn1 ═ Dn (m, n) -Dn (m-1, n) |. In addition, a difference between the data Dn (m, n) and the data Dn (m, n-1) and Dn (m, n +1) of the pixels of the adjacent 1 column is calculated. That is, Δ Dn2 ═ Dn (m, n) -Dn (m, n-1) | and Δ Dn3 ═ Dn (m, n) -Dn (m, n +1) | were calculated.

In step P35, the difference determination unit 962 determines whether the differences Δ Dn1, Δ Dn2 and Δ Dn3 are within the second range a 2. If the differences Δ Dn1, Δ Dn2 and Δ Dn3 are all within the second range a2, proceed to step P37, even if one is within the second range a2, proceed to step P36. The second range A2 is, for example, 0 to 5 μm.

The reason why the difference determination unit 962 determines whether or not the feature amount determination unit 961 is within the first range a1 in steps P34 and P35 is within the second range a2 is as follows. That is, the gap between the source electrode S and the drain electrode D in the organic EL element 50 has a large influence on the light emission luminance. If the luminance is greatly different between a certain pixel and its peripheral pixels, the human eye is likely to feel the feeling of difference in luminance unevenness, and thus the pixel is treated as a defective region. On the other hand, if the brightness changes slowly, the human eye does not experience brightness unevenness. Even if the data Dn (1, 1) and the data Dn (k, h) are 21 μm and 29 μm, respectively, the human eye does not see the brightness unevenness as long as the variation in the way is small.

In step P36, the number of defective areas is counted using the data Dn (m, n) as the defective area.

In step P37, the pixels of the organic EL element 50 of the data Dn (m, n) are determined as non-defective.

In step P38, the defect number determination unit 963 determines whether the defect number N1 is equal to or less than the first threshold value B1. If the defect number N1 is greater than the first threshold value B1, the number N1 is considered to be too large to be coped with by repair, and the process proceeds to step P42 to stop the production line of the manufacturing apparatus 100. Thereafter, the manufacturing apparatus 100 is repaired. If the defect number N1 is less than the first threshold value B1, the defect number N1 is considered to be not such an extent that the manufacturing apparatus 100 is stopped, and substantially copes with repair, and the process proceeds to step P39.

In step P39, the defect density determination section 964 calculates the number of defects N2 in a square region enclosed by (m-r, N-r) and (m + r, N + r). Further, instead of the square region, a rectangular region may be used.

In step P40, the defect density determination unit 964 determines whether or not the number of defects N2 in the square region is equal to or less than the second threshold value B2. If the number of defects N2 in the square region, that is, the defect density is greater than the second threshold value B2, the number of defects N2 is too concentrated in one place, and therefore, it is considered that the repair cannot be performed, and the process proceeds to step P42 to stop the production line of the manufacturing apparatus 100. Thereafter, the manufacturing apparatus 100 is repaired. If the defect density is below the second threshold B2, proceed to step P41 for repair with a repair line.

In step P41, the defective region is repaired using the repair device 110 and the like described in fig. 9A. A defect density lower than the second threshold B2 means that the defect areas are scattered. The repaired area is not conspicuous even if repaired. The data (Dn (m, n)) stored in the storage unit 97 together with the position information is transmitted to the repair main control unit 190 of the repair apparatus 110.

In step P42, the production line of the manufacturing apparatus 100 is stopped and maintenance work is performed so that defects do not occur.

Fig. 8C is another flowchart different from the defect determination flowchart of fig. 8B. Fig. 8C is a flowchart in which steps P38 and P39 in fig. 8B are omitted.

Even if the defect number determination unit 963 is not provided, when the defect number N1 is large, the defect number N2 in the defect density determination unit 964 may often be equal to or greater than the second threshold value B2, and therefore, the same effect can be obtained even if the step P38 and the step P39 are omitted.

Further, in fig. 8A to 8C, the observation of the gap between the source electrode S and the drain electrode D by the fifth observation device CH5 is explained. However, the defect detection using the data Dn (m, n) of the matrix MAT can be similarly applied to the height detection of the partition wall BA by the first observation device CH1, the application position of the metal ink MI by the third observation device CH3, and the like.

< repair apparatus for organic EL element >

Fig. 9A is a schematic diagram showing a repair apparatus 110 for batch-repairing the organic EL device 50 having the repair site. The repair device 110 is controlled by the repair main control unit 190. The repair main control unit 190 includes a repair position counter 195 and a repair memory 197. Although these are basically the same as the position counting unit 95 and the storage unit 97 of the manufacturing apparatus 100, the repair site specified by the repair site specifying unit 96 of the apparatus 100 and stored in the storage unit 97 is transferred to the repair storage unit 197.

The organic EL element repair device 110 includes: a dispenser 160 for repairing a partition wall, a laser fusing device 170, a device 120G for repairing a gate, a device 120I for applying a repairing droplet for an insulating layer, a device 20SD for applying a repairing droplet for a source, a drain, and a pixel electrode, a repairing cutting device 130, a device 20OS for applying a repairing droplet for an organic semiconductor, and a remover 115. The repair droplet applying device 120 and the repair cutting device 130 are the same as the droplet applying device 20 and the cutting device 30 of the manufacturing apparatus 100, and therefore, the description thereof is omitted.

The divider wall repair dispenser 160 applies the ultraviolet curable resin HR having high viscosity. The ultraviolet curable resin HR is applied to the sheet substrate FB via a nozzle of the divider for repair 160 by air pressure or the like. In this way, the partition walls BA of the ultraviolet curable resin are formed. The partition walls BA of the ultraviolet curable resin HR formed on the sheet substrate FB are cured by an ultraviolet lamp 165 such as a mercury lamp.

If the partition wall BA is repaired, the organic EL element 50 is repaired by applying a metallic ink MI or the like by a gate repair droplet applying device 120 or the like. The remover 115 is disposed in the final step of the organic EL element repair apparatus 110. The remover 115 removes a portion where the partition BA formed by the embossing protrudes above the design value, a portion where the cured ultraviolet curable resin HR protrudes above the design value, or the like, or removes the metal ink MI or the like applied to a portion different from the design value. Specifically, the defective portion is sublimated with a laser or the like, or is shaved off with a knife 117.

The repair device 110 for organic EL elements has a winding roll RE, which is a final step of the manufacturing apparatus 100, and around which the sheet substrate FB is wound in a roll shape, mounted on a repair supply roll FRL. Thus, the repairing apparatus 110 sends out the sheet substrate FB substantially in the-X-axis direction opposite to the + X-axis direction which is the traveling direction of the manufacturing apparatus 100. That is, the repair device 110 feeds the sheet substrate FB from the trailing end of the winding roll RE wound by the manufacturing device 100 toward the leading end, and the repair winding roll FRE winds the sheet substrate FB.

The repair supply roll FR and the repair take-up roll FRE can be changed at a speed that is much greater than the supply roll RL and the take-up roll RE of the manufacturing apparatus 100. If there are a plurality of repair sites 102m to 105m from the trailing end in the sheet substrate FB of 200m or more, the repair supply roll FRL and the repair take-up roll FRE rotate at a high speed from the trailing end to around 102m, and thereafter rotate at a low speed to move the sheet substrate FB from the trailing end to the repair site at the site of 102 m. By performing such an operation by the repair device 110, the time required for repair in batch processing can be shortened.

An eleventh registration sensor CA11 is disposed downstream of the repair supply roll FRL in the-X axis direction. The eleventh alignment sensor CA11 detects the first mark AM and the second mark BM. When there is a repair portion at a position 102m to 105m from the trailing end in the sheet substrate FB of 200m or more, the sheet substrate FB is fed at a high speed. Thus, the repair main control section 190 confirms the conveying position of the sheet substrate FB based on the image signal of the second mark BM formed every plural rows of the organic EL elements 50. Thereafter, if the repair site is approached, the sheet substrate FB is sent to the number of rows of the organic EL elements 50 of the repair site using the first mark AM.

In the final step of the repair apparatus 110, an eleventh observation apparatus CH11 is disposed for confirming whether or not the repair is sufficiently performed. The eleventh observation device CH11 may be provided not only in the final step but also in each repair step.

Although the explanation of the repair process after the droplet applying device 20 for the light emitting layer is omitted in fig. 9A, it is needless to say that the droplet applying device 120 for the light emitting layer may be provided.

FIG. 9B is a repair flow diagram of the batch-processed repair device 110 shown in FIG. 9A.

In step P91, the repair memory unit 197 receives data of the repair site from the memory unit 97 of the manufacturing apparatus 100. Thus, the repair main control unit 190 can grasp a repair site to be repaired.

In step P92, the repair main control unit 190 determines the rotational speed of the repair supply roll FRL or the like based on the number of rows of the repair site. For example, if there is a repair site at a site near the trailing end of the winding roll RE wound by the manufacturing apparatus 100, the rotation of the repair supply roll FRL or the like is determined to be at a low speed. On the contrary, if there is a repair site at a site distant from the trailing end of the winding roll RE, the rotation of the repair supply roll FRL or the like is determined to be high speed. By controlling the rotation speed in this manner, the moving time to the repair site can be shortened. The repair main control section 190 feeds out the sheet substrate FB in the-X axis direction at the determined rotation speed.

In step P93, the repair main control unit 190 determines whether or not the repair supply roll FRL or the like is rotating at a high speed. If the rotation speed is high, the process proceeds to step P94, and if the rotation speed is low, the process proceeds to step P97.

In step P94, the repair position counter 195 counts the number of rows of the organic EL element 50 based on the first mark AM or the second mark BM shown in fig. 2. Since the sheet substrate FB is conveyed in the-X axis direction, the count of the number of lines becomes a count of decreasing number of lines.

In step P95, the repair main control unit 190 determines whether or not the repair site is close based on the result of counting the number of lines by the repair position counting unit 195. If so, proceed to step P96, otherwise return to step P94 if not already so.

In step P96, the repair main control unit 190 sets the rotation of the repair supply drum FRL or the like to a low speed. Further, the correction device is selected based on the repair site data stored in the repair storage unit 197, and is moved to the Y-direction position of the defect in advance. By doing so, the correction time can be shortened.

Next, in step P97, the number of lines is counted based on the first mark AM, and the position is confirmed with the first mark AM as an alignment mark. The repair main control unit 190 checks the shift, inclination, and the like of the sheet substrate FB in the Y axis direction.

In step P98, the position of the correction device 110 is finely adjusted along one or both sides X, Y based on the position of the first mark AM and the repair location data stored in the repair memory 197, and the defective location of the organic EL element 50 is repaired. If the partition BA is defective, the defective portion is repaired by the distributor 160 for partition repair, the laser fusing device 170 or the remover 15. If the metal ink MI in the pixel region is not applied well, the metal ink MI is removed by the laser fusing device 170, and the metal ink MI is applied again by the repair drop applying device 120SD. In this manner, the repair main control unit 190 appropriately selects an appropriate repair process in accordance with the contents of the defect at the repair site. By having a plurality of identical parts, the correction means can shorten or eliminate the movement in the Y direction. In addition, repairs may be performed simultaneously.

In step P99, the eleventh observation device CH11 transmits an image signal of the repair state to the repair main control section 190. Thereafter, it was confirmed whether the repair site was completely repaired.

If the repair of all the repaired parts is completed, the drum FRL and the like are reversed to be in the same state as the state after being wound by the manufacturing apparatus 100 (P100).

Further, the conveying speed of the sheet substrate FB by the repair supply roll FRL or the like is set to two stages, i.e., a low speed and a high speed, but may be changed at a speed of 3 stages or more, and it is preferable to perform feedback control such as PID control in these speed controls.

In the above flowchart, the repair apparatus 110 checks the first mark AM and the second mark BM while the sheet substrate FB is being conveyed in the-X axis direction. However, the repairing apparatus 110 may perform the repair while conveying the sheet substrates FB in the X-axis direction after temporarily conveying all the sheet substrates FB in the-X-axis direction.

< apparatus for manufacturing and repairing organic EL element >

Fig. 10 is a schematic view showing a manufacturing and repairing apparatus 200 for inspecting a defective portion while manufacturing an organic EL device 50 and repairing the defective portion on-line when the defective portion exists. In fig. 10, the steps after the light-emitting layer step are not shown. In fig. 10, the same reference numerals are used for the same devices as the manufacturing device 100 shown in fig. 1 or the repair device 110 shown in fig. 9A.

The sheet substrate FB fed out from the supply roller RL is heated to a glass transition temperature or higher by the thermal transfer roller 15 so that the sheet substrate FB is pressed by the platen roller 10 and the pressed partition BA retains its shape.

A first observation device CH1, a divider 160 for repairing partitions, and a laser fusing device 170 are disposed downstream of the platen roller 10 in the X-axis direction. A gate repair droplet applying device 120G is disposed downstream of the laser fusing device 170. The first observation device CH1 observes whether or not the partition BA for wiring of the thin film transistor and for pixel display is formed correctly. If a defective portion is found in the partition BA by the first observation device CH1, the ultraviolet curable resin HR is applied to the sheet substrate FB by the partition repair dispenser 160. Thereafter, the resin is cured by the ultraviolet lamp 144 to repair the partition BA of the defective portion. In addition, if an excessive partition BA is formed, the excessive partition BA is removed by the laser fusing device 170. A first alignment sensor CA1 is disposed downstream of the laser fusing device 170.

The sheet substrate FB proceeds to the electrode forming step after the first alignment sensor CA1 detects the first mark AM and the second mark BM.

In the electrode forming step, droplet applying device for gate 20G receives the positional information from first alignment sensor CA1, and applies metal ink MI to groove portions GR between partition walls BA of gate bus line GBL. Thereafter, the metal ink MI is dried or calcined by the heat processing apparatus BK.

A second observation device CH2 is disposed downstream of the gate droplet applying device 20G, and a gate repair droplet applying device 120G is disposed downstream thereof. The second observation device CH2 observes whether or not the metal ink MI is applied to the gate bus line GBL and functions as a conductive line. When a defective portion is found in the gate bus line GBL by the second observation device CH2, the repair liquid droplet applying device for gate 120G applies the metal ink MI onto the sheet substrate FB. A second alignment sensor CA2 is disposed downstream of the gate repair droplet applying device 120G.

Next, the droplet applying apparatus 20I for the insulating layer and the like are also the same, and after the manufacturing process, there is an observation process, and if a defective portion is found in the observation process, the defective portion is repaired in a repair process. In the combined manufacturing and repair apparatus 200 shown in fig. 10, the remover 115 is provided after the repair liquid application device 20OS for the organic semiconductor, but a plurality of removers may be provided after the platen roller 10, after each droplet application device 20, or the like.

Moreover, the time for manufacturing the organic EL element 50 does not necessarily coincide with the time for repairing the defective portion in the same process. In addition, the embossing step and each coating step are not finished at the same time. Therefore, in the case of on-line manufacturing or repair, it is necessary to rotate the supply roller RL or the like in accordance with the speed of the most time-consuming process. Since the productivity cannot be improved in this case, for example, if the most time-consuming process is a process of removing a defective portion by the remover 115, 2 removers 115 are arranged, or the sheet substrate FB is loosened as shown in the lower left end of fig. 10, thereby improving the productivity as much as possible.

Industrial applicability of the invention

Although the manufacturing apparatus and the repairing apparatus for the organic EL element have been described, the manufacturing apparatus and the repairing apparatus can be applied to a field emission display, a liquid crystal display element, and the like. Although the present embodiment has been described with reference to a thin film transistor using an organic semiconductor, the thin film transistor may be a thin film transistor using an amorphous silicon-based inorganic semiconductor.

Although the manufacturing apparatus 100, the repair apparatus 110, and the combined manufacturing and repair apparatus 200 according to the embodiment are provided with the heat processing apparatus BK, an ink or a solution that does not require heat treatment by using an improvement in the metal ink MI, the light-emitting layer solution, or the like has been proposed. Thus, the heat processing apparatus BK does not necessarily need to be provided in this embodiment.

Claims (16)

1. A defect detection method for a display device including a plurality of pixels, the method comprising:

a measurement step of measuring a feature amount for each local region of the display device;

a first determination step of determining whether or not the measured characteristic amount of each local region is within a first range;

a calculation unit that calculates a difference between the feature value of the local region and the feature value of a local region around the local region for the region determined to be within the first range in the first determination step;

and a second determination step of determining whether or not the difference calculated by the calculation unit is within a second range.

2. The defect detection method of claim 1, wherein the regions of the display device are divided in rows and columns,

the peripheral local region is a pixel adjacent to the pixel determined to be within the first range in the row direction or the column direction.

3. The defect detection method according to claim 1 or 2, wherein the feature quantity includes: at least one of a height of a partition wall of the display device, a position of the partition wall, and a gap between an electrode and an electrode of the display device.

4. The defect detection method according to any one of claims 1 to 3, comprising:

a defect count step of counting, as defects, the local area determined to be outside the first range in the first determination step and the local area determined to be outside the second range in the second determination step;

a step of stopping a production line of the display device when the number of defects is greater than a first threshold in the defect number counting step.

5. The defect detection method according to claim 2, wherein said display device is formed on a flexible substrate on a roll, the flexible substrate being conveyed at a given speed in said row direction,

in the measuring step, a characteristic amount of the display device is measured by a sensor extending in the column direction, and the characteristic amount is sequentially updated in accordance with a speed at which the flexible substrate is conveyed, thereby measuring characteristic amounts divided into rows and columns.

6. The defect detection method according to any one of claims 1 to 5, comprising a step of specifying a position by an index indicating a position of the display device,

the location of each local area is specified.

7. A defect detection method for a display device, comprising:

a defect counting step of measuring a feature amount for each local region of the display device and counting a region determined as a defective region based on the measured feature amount of the region;

a step of stopping a production line of the display device when the number of defects is larger than a first threshold in the defect counting step;

a defect density calculating step of calculating a defect density within a given area when the number of defects is smaller than a first threshold value in the defect counting step;

a step of stopping a production line of the display device when the defect density is larger than a second threshold value in the defect density calculation step.

8. The defect detection method according to claim 7, comprising: a step of repairing the display device in a repair line when the defect density is lower than a second threshold value in the defect density calculating step.

9. The defect detection method according to claim 8, wherein when the display device is conveyed to the repair line, defect data including position information and feature quantities of the measured region is transmitted to the repair line.

10. The defect detection method according to claim 9, wherein the display device is formed on a flexible substrate on a roll, the flexible substrate is transported in the row direction at a given speed in a production line and wound in a roll shape,

and repairing a defective region of the display device sent out in a state of being wound in a roll shape in the repair line based on the defect data.

11. A defect detection device for a display device including a plurality of pixels, comprising:

a feature amount determination unit that measures a feature amount for each local region of the display device and determines whether the measured feature amount of the region is within a first range;

and a difference determination unit that calculates a difference between the feature amount of the local region determined to be within the first range by the feature amount determination unit and the feature amount of the local region in the periphery of the local region, and determines whether or not the difference is within a second range.

12. The defect detecting apparatus of claim 11, wherein the partial area of the display device is divided into rows and columns,

the peripheral local region is a region adjacent to the local region determined to be within the first range in the row direction or the column direction.

13. The defect detection apparatus for a display device according to claim 11 or 12, comprising:

a defect number determination unit that counts, as defective regions, the local regions determined to be outside the first range in the first determination step and the local regions determined to be outside the second range in the second determination step, and determines whether or not the counted number of defects is greater than a first threshold;

and a defect density determination unit that calculates the number of defects occupied in a predetermined area and determines whether the number of defects occupied in the predetermined area is greater than a second threshold value.

14. A defect detection device for a display device is characterized by comprising:

a defect number determination unit that measures a feature amount for each local region of the display device, counts the number of defects in the local region determined as a defective region based on the measured feature amount of the local region, and determines whether or not the number of defects is greater than a first threshold;

and a defect density determination unit that calculates the number of defects in a predetermined area when the number of defects is determined to be smaller than a first threshold value by the defect number determination unit, and determines whether or not the number of defects in the predetermined area is larger than a second threshold value.

15. The defect detection apparatus for a display device according to claim 14, comprising:

a position counting unit that specifies a position of the defective region and outputs the specified position as position information;

and a storage unit that stores defect data including the position information and the feature value of the area determined as the defective area.

16. A defect detecting apparatus for a display device is characterized by comprising a defect density determining unit,

wherein the defect density determination section measures a feature amount for each local region of the display device, counts the number of defects of the local region determined as a defective region based on the measured feature amount of the local region, calculates the number of defects occupied in a given area, and determines whether or not the number of defects occupied in the given area is greater than a second threshold value.