HK1033344B - Method of manufacturing plated substrate, magnetron sputtering source, plating chamber and plating apparatus - Google Patents

Description

Method for producing a coated substrate, magnetron sputtering source, coating chamber and coating installation

Technical Field

The invention relates to a method for producing a coated substrate, wherein the substrate is sputter-coated by means of at least two electrically insulated, stationary, elongated target devices which are arranged side by side along their long sides at a distance which is substantially smaller than the width of the target devices, each target device being electrically driven by means of its own electrical connection, and wherein the substrate is arranged at a distance from the target devices, a magnetron field being generated above each target device.

The invention also relates to a magnetron sputter source for carrying out the method, comprising at least two electrically insulated, fixed and longitudinally extending target arrangements which are arranged next to one another along their long sides at a distance which is substantially smaller than the width of the target arrangements, wherein each target arrangement has its own electrical connection.

The invention also relates to a sputtering coating chamber with the magnetron sputtering source and vacuum coating equipment with the coating chamber.

Background

In principle, the invention is based on the idea of providing a coating of at least 900cm for large surfaces, in particular for surfaces to be coated²The rectangular substrate is sputter coated, which results in a uniform film thickness distribution, where the process may be particularly reactive. Such substrates are used in particular in the production of flat display panels, which generally have glass substrates thinner than 1mm, and they are therefore particularly useful for TFT panels or Plasma Display Panels (PDP).

In large-area magnetron sputter coating, a large sputtering surface is generally required, and therefore a large target will be required, because the sputtering source and the substrate are moved relative to each other. The following problems are associated therewith:

(a) the uniformity of the processing conditions on a large planar target, which is very pronounced in reactive sputter coatings,

(b) erosion profile

(c) Cooling down

(d) The load is basically generated by the atmospheric pressure of the large target and the pressure of the cooling medium.

To solve the mechanical loading problem (d), a rather thick target plate must be used, which reduces the magnetic field penetration and thus the electron trapping effect at a given electrical power. But if the electrical power is increased, a cooling problem (c) occurs. This is mainly because good contact between the large-area target and the cooling medium can only be achieved at great expense, and the back-side magnetic arrangement opposite the target acts as a hindrance. It is also known that in magnetron sputtering, whether reactive or non-reactive, the target arrangement is generally composed of a target plate defining the sputtering surface, which is composed of the material to be sputtered and a supporting plate, and that the target arrangement is sputter-coated along a so-called "racetrack". Depending on the tunnel-like magnetic field generated along a given trajectory on the target, which produces a higher plasma density annular region, one or more annular erosion grooves will be formed in the sputtering surface. This is generated from the high electron density in the tunnel-like surrounding magnetron magnetic field (electron trap) region. By these "runways", the substrate to be coated will obtain an uneven thickness distribution over a relatively small plane placed in front of the magnetron sputtering source. In this regard, the target material is difficult to utilize because sputter erosion along the "racetrack" causes less sputtering of the target area outside the racetrack, which results in wavy or trough-like erosion profiles. In practice, because of the "racetrack", the sputtering surface of a large planar target is smaller than the substrate plane. In order to eliminate the effect of the "racetrack" on the coating, the sputtering source and the substrate to be coated can be moved relative to each other as described above, but this results in a decrease in the coating efficiency per time unit. On the other hand, in systems with relative motion, the task of performing higher sputtering powers in positions also faces cooling problems.

Thus, in principle, the four problems (a), (b), (c) and (d) -which are the objectives to be achieved-whose individual solutions often entail conflicts with other problem solutions; these solutions are counter-running.

Disclosure of Invention

The object of the invention is to create a magnetron sputter source with which the above-mentioned problems are solved and which can be made practically of any size, in particular a large planar substrate which is fixed to at least one associated sputter source, and which can be economically guaranteed with a uniform film thickness distribution. In this regard, the sputter source should also have a sensitive reactive treatment at a high separation efficiency or a high plating efficiency in the case of high uniformity of the treatment conditions. In reactive processes, the non-uniform "racetrack" effect causes some significant problems due to the well-known large plasma density gradients.

The invention also provides a method for producing a coated substrate, wherein said substrate is sputter coated by means of at least two fixed, elongated target devices electrically insulated from each other, said target devices being arranged side by side along their long sides at a spacing substantially smaller than the width of the target devices, each target device being electrically driven by means of its own electrical connection, and said substrate being arranged spaced from said target devices, a magnetron field being generated above each of said target devices, characterized in that: the magnetron field above each target device is respectively and adjustably changed with time, and the substrate surface F_S≥900cm²And (7) coating.

The invention also provides a magnetron sputter source for carrying out the method, having at least two fixed, longitudinally extending target arrangements which are electrically insulated from one another and which are arranged next to one another along their long sides at a distance which is substantially smaller than the width of the target arrangements, wherein each target arrangement has its own electrical connection, characterized in that: each target arrangement has a controllable magnetic arrangement by means of which a time-varying magnetron field is generated above each target arrangement.

The invention also provides a sputter coating chamber with a magnetron sputtering source as described above and a magnetron sputtering source which is arranged at a distance from the magnetron sputtering source and can be used for at least one magnetron sputtering source having a targetCoated surface F_SIn which the sputtering source plane F performs sputtering_QWith the surface F of the substrate to be coated_SIs V_QS≤3。

The invention also provides vacuum coating equipment with the coating chamber, wherein the target device is connected with the generators which are controlled independently.

This object is achieved by the magnetron sputter source according to the invention in that at least two, preferably more than two, elongate target arrangements electrically insulated from one another are arranged with their long sides next to one another with a gap between them, which gap is much smaller than the width of the target arrangements, and in that each target arrangement has its own electrical connection, in which the anode arrangement is also arranged. The targets of the target device are preferably placed in a circle along a "racetrack" trajectory at the corners.

In the magnetron sputtering source according to the invention, the power supply of the individual target arrangements can be adjusted independently of one another, so that the film thickness distribution on the substrate is greatly improved. In this respect, the sputter source according to the invention can be adapted to any size of substrate to be coated on the module.

The anode arrangement may-if sometimes not constructed from the target arrangement itself, compare the working of fig. 2 or fig. 3-be placed outside the entire arrangement, but it also preferably comprises anodes between the long sides of the target arrangement and/or at the front of the target arrangement, the long sides being particularly preferred.

It is also preferred to place a stationary magnetic device on the sputter source; the arrangement is preferably formed by a common magnetic frame surrounding the target arrangements or, particularly preferably, by a frame surrounding each target arrangement. It is entirely possible and expedient to realize the magnets on the frame or frames or on the stationary magnetic means at least partly by controllable electromagnets, but here preferably permanent magnets are used to realize the magnets of the device or of the frame or frames.

By laying the fixed magnetic means, preferably permanent magnetic frames, respectively, the magnetic field generated at the directly adjacent target means can also be improved by the "racetrack" structure as desired for the film thickness distribution on the substrate and the utilization of the mounted long target.

In addition, it is also preferred that a magnetic device is positioned under each of the at least two target devices. This can be configured to be completely fixed in position or unchanging over time to configure a tunnel-like magnetic field on each target device. In addition, they are preferably also constructed in such a way that a temporal change of the magnetic field pattern is caused at the target arrangement. Reference is made to the construction and production of magnetic means on the inventive target device, see european patent EP- ｃA-0603587 and US patent US- ｃA-5399253 of the same applicant, the disclosure of which in connection therewith is stated as an integral part of the present description.

Although, according to fig. 2 of the european patent EP- ｃA-0603587, the position of the magnetic field pattern and the position of the region of higher plasmｃA density can be changed as ｃA whole, they preferably do not change, or only change very little, whereas, according to fig. 2 and 3 of said document, the position of the apex, the position of the highest plasmｃA density, is changed.

In any case, in order to change the position of the area or vertex on the magnetic means, a selectively controllable electromagnet-which may be fixed in position or movable-is placed under the target means, which magnetic means is preferably realized by a permanent magnet that can be driven in motion.

ｃA preferred movable magnetic arrangement is realized by at least two magnet rollers extending in length below the target arrangement, which are drivable and rotatably placed, again preferably using permanent magnets, which are indicated on the individual targets of fig. 3 and 4 of european patent EP- ｃA-0603587.

The magnet drum runs in an oscillating manner, the maximum oscillation amplitude preferably being ≦ τ/4. Reference is again made in full to this technique and its effects to the european patent EP 0603587 mentioned and to the US patent US-A-5399253, which are also stated to be part of the present description.

At least two drivable and rotatably positioned permanent magnet rollers extending in the length direction of the target arrangement are therefore preferably accommodated.

By the following preferred means and methods

Feed with target arrangement

Having the mentioned stationary magnetic device region, in particular the mentioned frame region

Under each target device there is a time-varying magnetic device, preferably a magnet roller, to provide a set of contributions which in combination allow a maximum optimization, in particular a homogenization, of the film thickness distribution of the coating. Meanwhile, a higher target material utilization rate can be obtained. The greatest advantage is that, by means of the movement of the magnetic field apex on the target arrangement, the plasma region does not scan over, but rather the plasma density distribution in this region oscillates.

In order to be able to achieve the highest possible sputtering power, the target arrangement is cooled as well as possible by mounting it on a supporting frame, in which case, for the target arrangement whose side of the frame is covered for the most part on the surface, a cooling medium duct closed by means of a film is arranged on the opposite side of said surface. This results in a large planar heat sink, in which the film, depending on the pressure of the cooling medium, is pressed against the target arrangement to be cooled without play and in a flat manner.

The support frame on the magnetron sputtering source according to the invention is preferably, and preferably at least partially, made of an electrically insulating material, preferably plastic, so that it is accommodated together with the above-mentioned target arrangement, the anode, and, if present, the stationary magnetic arrangement (preferably a permanent magnet frame), the magnetic arrangement below the target arrangement (preferably a movable permanent magnet arrangement, in particular the above-mentioned drum), and also cooling medium ducts, etc. For this purpose, the support frame is constructed and arranged in such a way that it separates the vacuum from the external atmosphere. In this way, a more flexible design of the target arrangement with respect to the pressure mechanical loading is possible.

Another optimization and adjustment for the above large planar film thickness profile can be obtained as follows: gas outlets are located along the long sides of the target assembly and are in communication with a gas distribution system. It is thus possible to adjust the distribution of reactive and/or working gases as desired to replenish the process chamber in the vacuum process chamber or process chamber in a vacuum processing apparatus of the sputtering source of the present invention.

The mutual spacing of the rectangular target devices over their width is a maximum of 15%, preferably a maximum of 10%, more preferably a maximum of 7%.

In a preferred embodiment, the lateral spacing d between each individual target device is

1 mm. ltoreq. d.ltoreq.230 mm, of which

7mm≤d≤20mm

The width B occupied by each individual target device is preferably

60mm ≦ B ≦ 350mm, wherein preferably

80mm≤B≤200mm

Its length L is preferably

400mm≤L≤2000mm。

In this regard, the length of each individual target device should be at least equal compared to its width, preferably the former being much larger than the latter. Although the sputtering planes of the individual elongated target arrangements, which have just been or have been preformed, are preferably arranged along one plane, it is entirely possible, in particular with the side sputtering planes close to the substrate to be sputtered as intermediate planes, sometimes also deliberately, if necessary, to compensate for the marginal effect of the coating thickness distribution.

The electrons of the magnetron plasma move around along a "race track" in a direction determined by the magnetic and electric fields in the target surface area. It is now believed that the electron trajectory and its effect, and hence the erosion groove effect at the target surface, can be optimized as desired, and that the magnetic field is not only time-varying, but also position-varying as it is configured along the length of the target device. In any case, this is achieved by positioning and/or selecting the strength of the magnets placed on the frame, preferably per magnet basket, and more preferably per permanent magnet basket, and/or by adjusting the respective strength and the respective position of the magnets on the magnetic means, preferably the permanent magnet rollers, in case of each target means placed under it. Since the electrons move in a given direction of the loop corresponding to the polarity of the magnetic field, it can be observed that: due to the pronounced offset forces, the electrons are thrown outward in particular in the region of the narrow sides of the target arrangement and in the region of the diagonal corner portions in accordance with their direction of movement. It is therefore preferably recommended: when the magnetic frame is placed, the field intensity generated by the frame magnet is constructed according to different positions, and the field intensity is mirror-symmetrical to the diagonal line of the 'rectangle' of the target.

In a preferred embodiment, the sputter source according to the invention is fixed by means of a linear bayonet fitting, which is particularly suitable for cooling using a pressurized film in the manner described above. The device can thus be replaced very simply by decompression of the coolant line, the vast majority of the rear side of the target device does not need to be cooled, and there is no means for fixing the target device on the opposite side of the process chamber.

A preferred sputter source of the invention has more than two target arrangements, preferably five or more.

By using the magnetron sputtering source according to the invention in a sputter coating chamber, a substrate support is arranged for the preferably planar substrate to be sputter coated, possibly in the sputter plane F of the sputtering source_QAnd the surface F of the substrate to be coated_STo a suitable small ratio V_QSWithin the range of

V_QS3 or less, preferably

V_QS2 or less, among which those are particularly preferred

1.5≤V_QS≤2

The effective power of the sputter source is thereby greatly increased. In addition, on the sputter coating chamber of the present invention having the above-described sputter source, this can be achieved with other criteria as well: the distance D between the new plane of the magnetron sputtering source and the substrate is chosen to be substantially equal to the width of the elongated target arrangement,

preferably 60mm < D < 250mm

Particularly preferably 80mm < D < 160mm

In the vacuum coating system according to the invention with the sputter coating chamber according to the invention, the target arrangements are therefore connected to a generator or current source in the magnetron sputter source according to the invention, which generators can be controlled independently of one another.

In another embodiment, or where necessary, if a plurality of target devices are provided in association with the aforementioned generator means, at least two of the target devices may be provided in association with the output of a common alternator.

The generator which supplies each target device independently can be a "pure" dc generator, an ac generator, or a generator for generating a superimposed ac/dc signal or a pulsating dc signal, wherein, in particular between the generator and each target device, a chopper unit can be arranged in the vicinity of the dc generator, by means of which unit the target device carries a pulsed generator output or a low-ohmic generator reference potential. For this technology, reference is made in its entirety to European patent EP-A-0564789 or U.S. Pat. No. 08/887091 of the same applicant.

In addition, the gas outlets arranged at the long sides of the target arrangement are connected to a reactive gas reservoir and/or a working gas reservoir (for example for storing argon), preferably the gas outlets along the long sides of the different target arrangements can be adjusted independently of one another with respect to the gas flow.

The sputter coating installation according to the invention with at least three elongated target arrangements is operated optimally in such a way that the sputtering power of the target arrangements lying laterally outside is 5% to 35%, preferably 10% to 20%, higher than that of the target arrangements lying inside. The above-mentioned "scanning" of the target arrangement with respect to the position of the plasma region, in particular the "wobbling" of the apex position of the tunnel-like magnetic field, and the wobbling of the plasma density distribution resulting therefrom, etc., in particular by means of the mentioned magnet drum, is preferably carried out at a frequency of 1 to 4Hz, in particular preferably at about 2 Hz. The drum amplitude is preferably phi ≦ pi/4. The film thickness profile on the substrate can also be continuously optimized by explicitly designing a path/time-profile map for the above-mentioned position offset.

It is emphasized here that the generator connected to the target device can also be controlled to output in real time and to output modulation signals that are dependent on one another.

In addition, the power feed and/or the distribution of the gas feed and/or the magnetic field distribution of the target arrangement, when controlled or modulated in real time, produce a desired film thickness distribution, preferably a uniform distribution, on the substrate.

The magnetron sputtering source has an optimum power density P of

1W/cm²≤P≤30W/cm²，

Wherein, especially for reactively deposited films, preferably made of metal targets, for which, especially for ITO films, the value is

1W/cm²≤P≤5W/cm²，

For the sputter coating of the metal film, it is preferable

15W/cm²≤P≤30W/cm²。

In connection with the development of the magnetron sputtering source according to the invention described above, it is known that, in particular in target plate arrangements having a length which is much greater than the width, it is in principle preferred to take into account the spatially differing magnetic field strengths of the magnetron fields in the longitudinal direction of the target arrangement, in particular in the lateral regions thereof.

However, these teachings also apply substantially to elongated magnetrons.

For the inventive elongated magnetron source, which comprises a time-variable magnetic system, preferably a permanent-magnet system underneath, it is therefore proposed that a magnetic frame, preferably a permanent-magnet frame, be assigned to the target arrangement and that the different field strengths of the frame magnets be configured in positions along the long sides of the target arrangement, which can be measured in a given spatial direction. In order to compensate for the above-mentioned offset forces acting on the surrounding electrons, it is proposed here that: this field strength is configured substantially symmetrically and positionally differently along the target arrangement diagonal.

The invention is suitable in all respects in particular for sputter coating of substrates, in particular large-area substrates, preferably flat substrates in a reactive process, preferably using metal targets, preferably using ITO films (indium tin oxide). In addition, the invention is particularly suitable for the production of substrate coatings, in particular glass substrates, for example flat panel displays, in particular TFT screens or PDP screens, in which large flat substrates, for example semiconductor substrates, etc., are coated in a reactive or nonreactive manner, but in general reactively, in principle with economically reasonable and only low defective rates.

It is precisely in reactive sputter coating processes, in particular in ITO coating, that a low discharge voltage for obtaining a high coating quality is important, for which especially a low film resistance is important even without temperature reduction measures. These objects are achieved by the sputter source of the present invention.

Here, effective suppression of arc discharge can also be achieved.

Drawings

The invention is explained below by way of example with the aid of the accompanying drawings. Wherein:

FIG. 1 illustrates a magnetron sputter source of the present invention operating in a first electrical scheme;

FIG. 2 shows a simplified sputter source of FIG. 1 of the present invention in another electrical wiring configuration;

FIG. 3 illustrates another electrical wiring configuration of the sputtering source of the present invention, which is similar to FIG. 1;

FIG. 4 shows a cross-sectional portion of a magnetron sputter source of the invention;

FIG. 5 shows a top view of a linear bayonet fitting, which is preferably mounted on the sputter source of FIG. 4;

FIG. 6 shows a simplified top view of a portion of a magnetron sputtering source of the present invention;

FIG. 7 shows a top view of a preferred embodiment of a permanent magnet drum, which is preferably mounted on the magnetron sputtering source of the present invention according to FIG. A;

FIG. 8 shows a schematic view of a sputter coating apparatus of the present invention;

FIG. 9 shows an erosion profile on a target arrangement of a sputter source of the present invention;

FIG. 10 shows the distribution of material sputtered by a sputter source on a sputter source having five target arrangements according to the invention;

FIG. 11 shows 530X 630mm of film coated using the sputtering source of the present invention²Film thickness profile on glass substrate.

Detailed Description

In figure 1 there is shown a magnetron sputter source 1 according to the invention in a basic configuration. It comprises at least two elongated target means 3a to 3c, three in this illustration. Other known equipment sets, such as magnetic field sources, cooling devices, etc., mounted on the magnetron sputtering source are not shown in FIG. 1. The sputter source 1 has electrical connections 5 on each target arrangement 3. Between the target arrangements 3, which are preferably spaced apart from one another on the long sides, strip-shaped anodes 7a, 7b are placed by way of example.

The target devices 3 are insulated from each other and each have an electrical connection 5, so that separate electrical connections are possible as described in the following fig. 2 and 3.

According to fig. 1, each target device 3 is connected to a generator 9, which can be controlled independently of each other and need not be of the same type. All generators can be, as shown in the figure, dc generators, ac-dc generators, generators producing pulsating dc signals, or dc generators with chopper units placed between the generator output and each target device, or if necessary ｃA mixture thereof, all with respect to their construction and mode of action, see the mentioned european patent EP- ｃA-0564789 and us patent No. 08/887091.

The anode 7 is also selective in electrical operation. The anode can, for example, operate on direct current, alternating current, or direct current with alternating current superimposed, or pulsating direct current voltage, as shown by the generator 12, if necessary with the chopping unit mentioned, or with a reference potential, as shown by 12 a. By changing the mode of operation of the electrical cathode, i.e. of the target arrangement, and, if appropriate, also of the electrical anode, the distribution of the sputter material distributed over the sputter source plane formed by the target arrangement and the distribution over the substrate (not shown) mounted on the sputter source can thus be adjusted as desired.

The interdependent generator 9 can be modulated in real time, as indicated by the modulation input MOD, in order to perform a travelling wave time modulation of the electrical operating conditions of the target arrangement as desired.

In fig. 2 and 3, a further electrical connection possibility of the sputter source 1 according to the invention is shown, while retaining the positional indication of the sputter source components described, wherein (not shown) the use of an anode arrangement can be dispensed with.

According to fig. 2 and 3, the target devices 3 are each connected in pairs to the inputs of an ac generator 15a, 15b or 17a, 17b, wherein the generators 15 and 17 can also output a dc signal or a pulsating dc signal, optionally with an ac superimposed signal. The generators 15, 17 may also be modulated again if necessary, for example amplitude modulation may be used for the ac output signal actually used as carrier signal.

According to fig. 2, one of the target devices (3b) is connected to the input of one of the generators 15a or 15b, whereas according to fig. 3 the target devices 3 are connected in pairs by means of the generators 17, for which it is entirely possible, as indicated by the dashed lines in fig. 19, for the individual target device groups to be subjected together to different potentials in the sense of a "common mode" signal, in the embodiment of fig. 2 and in the embodiment of fig. 3. If the wiring technique of fig. 2 or 3 is selected, then in a preferred embodiment the generator is operated at a frequency of 12 to 45 kHz. In this case, in the case of a "common mode" potential, for example, as in the case of the earth potential described in fig. 2, the target devices connected to the generator in pairs are alternately subjected to positive and negative potentials.

As can be seen from the illustrations of fig. 1 to 3, the magnetron sputtering source of the invention has great flexibility in order to electrically operate the individual target arrangements 3, so that the distribution of the sputtered material and the material deposited on the substrate in the process chamber 10 can be designed as desired.

Shown in fig. 4 are: a section of a cross-sectional view of a magnetron sputtering source of the invention in a preferred embodiment. According to FIG. 4, the target arrangements each comprise a target plate 3 of the material to be sputtered_a1And 3_b1The target plates are all fixed on a back plate 3_a2And 3_b2The above. In-line cardThe target arrangement 3 is fastened with the aid of the bayonet fittings 20 to the metal cooling plate 23 at the lateral periphery and/or in the central region.

The construction of a straight bayonet fitting can be taken from fig. 5. Thus, a hollow clamping plate 25 is placed on the target device 3 or on the cooling plate 23, which is U-shaped in cross section with inwardly bent U-shaped legs 27, wherein additionally spaced-apart recess formations 29 are also placed. Preferably, on the other half of the two parts of the target device 3, a linear clamping plate 31 with a T-shaped cross section is placed, wherein the rear part of the cross beam 33 has a protruding configuration 34. By inserting the protruding formation 34 into the recessed formation 29 and moving linearly in the direction S, the two parts hook into each other. It is of course also possible to reverse the procedure, in which a projection is arranged on the hollow clamping plate, which correspondingly engages in a recess on the clamping plate 31.

The target arrangement 3 is fastened to the cooling plate 23, first by means of a negative pressure of the cooling medium in the cooling duct 35 of the cooling plate 23. The duct 35 extends along a substantial part of the plane area of the target device plane in the direction of the cooling plate 23. The cooling duct 35-as mentioned-is fed with a flowing cooling medium under negative pressure and in the direction towards the target arrangement 3, which are described in CH-a-687427 of the same applicant, which are closed by a membrane-like diaphragm 37. The film 37 is positioned without a gap under the pressure of the cooling medium below the back plates 3a2 and 3b 2. In this case, the target arrangement is first fixed to the bayonet fitting under the effect of the negative pressure of the cooling medium. To remove the target assembly 3, the cooling system, either as a whole or separately, is depressurized so that the target assembly can be easily removed and removed, or replaced.

The anode clamping plate 39 extends along the long side of the target device 3. The anode clamping plates and the cooling plates 23 are mounted on a supporting frame 41, preferably and at least partially made of insulating material, preferably plastic. The frame 41 separates the vacuum in the process chamber 10 from the ambient or standard atmosphere in the space 11.

On the atmospheric pressure side in the support stand 41, for example, two permanent magnet rollers 43 extending in the longitudinal direction of the target apparatus and rotatable are disposed, and this roller is driven to oscillate by a drive motor (not shown). In the swing drive, a 180 ° rotation angle swing- ω 43 is preferably performed. In the permanent magnet drum 43, permanent magnets 45 are diametrically embedded along the length direction thereof.

In addition, on the atmospheric side in the support stand 41, a permanent magnet frame 47 is embedded for each target unit 3, which is placed substantially underneath along the periphery of each target unit 3, as shown in fig. 6.

According to fig. 6, in particular, the target arrangement has gas feed openings 49 in the direction of the long sides and the loading and unloading are carried out as indicated by the dashed lines in fig. 4, which openings are preferably controlled independently of one another in a row in respect of the gas flow. This is illustrated in fig. 4 by a control valve 51 which connects the feed line 49 to a gas storage tank arrangement 53, the arrangement 53 being provided with a working gas, such as argon, and/or a reactive gas.

For operation and design of the permanent magnet drum 43, reference is again made in its entirety to the disclosure of european patent EP-0603587 and US patent US-A-5399253.

In figure 6, a top view of the magnetron sputtering source of the invention of figure 4 is shown simplified and partially. As already shown with reference to fig. 4, a permanent magnet frame 47 is attached to the underside of each target arrangement 3. Preferably, the magnetic frame 47 is configured so as to: viewed in one spatial direction-such as Hz according to fig. 4-the magnetic field generated by the permanent magnet frame-as indicated by X in fig. 6-has a change of position along the long side of the target device 3. In a more preferred embodiment, the long side 47l of the frame 47₁And 47l₂The upper mounted magnet is divided into a plurality of zones, for example four zones as shown in fig. 6. In the diagram of fig. 6, the magnetic field strength of the permanent magnets disposed in each of the individual zones Z1 to Z4 in the direction of the x-coordinate axis is qualitatively shown, and the field strength distribution in the x-direction is also shown thereby. In addition, in each zone Z, the permanent magnet dipole direction is plotted.

Preferably, at 47l_1，2Are arranged in the same kind of permanent magnet area, but they are opposite to the diagonal D of the long target device 3_iIs mirror-symmetrical.

By means of the magnetic field generated by the permanent magnet frame 47 on the target arrangement 3, a desired positional magnetic field distribution is generated, which makes it possible to optimize the electron-encircling trajectory and thus the position and generation of the erosion grooves on the individual target arrangements. This takes into account in particular the deformation of the rail caused by the offset force. On the broad side of the target frame 47, a permanent magnet zone Z is placed_BThey preferably coincide with zone Z2. As described above, the target sputter sources of FIGS. 4, 6, and 7 are inventive.

The magnetic field H with a change in position in the x direction of each target device 3, which additionally varies in time as a function of the oscillation of the magnet drum, is selected by the field strength of the permanent magnets arranged, for example in the region Z₁、Z₂、Z₄Mid-, and/or by selecting a spatial dipole orientation-e.g. in zone Z₃Meso-, and/or purposefully designed by selecting location (i.e., spacing of target devices).

As mentioned above, preferably at least two permanent magnet drums 43 are provided for each target arrangement 3 mounted on the sputter source according to the invention. One of which is shown in fig. 7.

Preferably, different permanent magnet zones, such as Z, are also placed on the drum 43₁' to Z₄'. The permanent magnet field H with a variation in position along the cylinder is qualitatively shown in FIG. 7_R(x) And its preferred design.

Thus, by the targeted realization of the position and/or temporal distribution of the electrical feed of the individual target arrangement and/or of the magnetic field of the magnets of the individual target arrangement and/or by the targeted realization of the position and/or temporal variation or design of the gas injection situation of the gas inflow opening 49, the position and temporal distribution of the sputtering rate on the sputter source according to the invention is optimized. In the preferred real-time variant described with reference to fig. 4 to 7, preferably all quantities are used in combination in order to design the film thickness distribution on the substrate to be sputter coated, in particular on a flat plate, as desired, in particular in order to achieve a preferably uniform structure.

In FIG. 8, a sputter coating installation 50 having a sputter coating chamber 60 of the invention is shown, wherein a magnetron sputter source 10 of the invention is also shown. The sputter source 10 shown has-as is realized in the preferred embodiment-six target arrangements 3 and is constructed further as illustrated in figures 4 to 7. The sputter source according to the invention with the target arrangement can be operated with independent electrical and, if necessary, modular power supply, as indicated by block 62. In addition, the gas injection, in particular along the length of the target device, which may optionally also be modular, can be selectively adjusted, as indicated by the control valve frame 64, in order to allow the working gas and/or the reactive gas to flow from the gas reservoir 53 into the reaction chamber.

The drive block 65 shows the drive of the permanent magnet drum placed on the sputter source of the invention-sometimes path/time-modulatable-so that the desired drum oscillation can be selectively adjusted preferentially.

In the process chamber 60 of the present invention, a substrate support 66 is disposed, particularly for receiving a planar substrate to be coated. According to the sputter source of the invention, the time and position distribution of the emission material of the sputter source 10 can be preferably adjusted, in particular an even distribution over the time period, in particular in the edge region of the sputter source, so that the sputtering surface F of the sputter source can be adjusted_QWith the surface F of the substrate to be coated_SRatio V of_QSIs set relatively small, preferably

V_QS≤3，

Preferably is V_QS≤2，

Particularly preferably 1.5. ltoreq. V_QS≤2。

These quantities mean that the material emitted by the sputter source is utilized efficiently, with relatively little of the emission material not falling onto the plane of the substrate to be coated. These properties are enhanced in that the distance D between the sputter-coated substrate plane and the new plane of the magnetron sputtering source 10-due to the large planar plasma distribution of the sputtering source-can be chosen to be smaller, substantially equal to the width B (see figure 4) of the sputtering plane of the target arrangement 3, preferably

60mm≤D≤250mm

More preferably 80 mm. ltoreq. D.ltoreq.160 mm.

Due to the mentioned realizability of the small spacing D, a coating rate with a high sputter utilization can be obtained, resulting in the most economical coating.

In the apparatus shown in fig. 8, the laterally outermost target arrangements are preferably operated with a generator 63 at a higher sputtering power, preferably 5% to 35% higher, particularly preferably 10% to 20% higher than the sputtering power of the other internally arranged target arrangements. In addition, the permanent magnet drum, which is mounted on the sputter source 10 as shown in fig. 4, operates with a frequency of oscillation of 1 to 4HZ, preferably about 2 HZ.

The magnetron sputtering source, the sputtering chamber and the device according to the invention are particularly suitable for magnetron sputter coating of large flat, in particular flat, substrates, and have a high coating quality and a desired film thickness profile, in particular a uniform film thickness profile with high economy, in particular in a preferred mode of operation. These depend primarily on the process conditions for large planar uniform distribution over the sputtering source of the present invention. Therefore, the invention can be used for coating large-plane semiconductor substrates, especially for coating substrates of flat panel displays, especially TFT screens and PDP screens. The invention is particularly applicable to reactive coating of the substrate, in particular by means of an ITO film, or to metallization of the substrate by means of non-reactive sputter coating. Preferred set amounts of the sputter source or process chamber or apparatus of the invention are listed below.

1. Geometry of a circle

1.1 sputtering Source

■ side spacing d of fig. 4: the maximum value is 15%, preferably 10%, particularly preferably 7%, of the width B of the target arrangement, and/or

D is more than or equal to 1mm and less than or equal to 230mm, preferably

7mm≤d≤20mm。

■ new planes of target devices along one plane;

■ width B of target device:

b is more than or equal to 60mm and less than or equal to 350mm, preferably

80mm≤B≤200mm。

■ target device length L: at least B, preferably much larger than B, more preferably 400mm L2000 mm.

■ end region of target device: such as a semi-circle.

1.2 sputtering source/substrate:

■ sputtering plane F_QSize and upper surface F of substrate to be coated_SRatio of sizes V_QS：

V_QS3 or less, preferably

V_QS2 or less, more preferably 2 or less

1.5≤V_QS≤2。

■ minimum distance D between new plane of sputtering source and plane to be coated:

d is more than or equal to 60mm and less than or equal to 250mm, preferably

80mm≤B≤160mm。

■ substrate size: for example 750X 630mm²The sputtering plane of the film-coating sputtering source is as follows:

920×900mm²or is or

Substrate size: 1100 x 900mm²The sputtering plane of the sputtering source is as follows: 1300 x 1200mm²。

1.3, cooling:

ratio V of sputtering plane to cooling plane_SK：

1.2≤V_SK≤1.5。

2. And (3) operating data:

■ target temperature T:

t is more than or equal to 40 ℃ and less than or equal to 150 ℃, preferably

60℃≤T≤130℃。

■ sputtering power per sputtering plane unit: 10 to 30W/cm²Preferably 15 to 20W/cm²。

■ the outermost target arrangements on the sides each preferably have 5 to 35% more sputtering power, preferably 10 to 20% more sputtering power per planar unit.

■ oscillation frequency of magnet drum: 1 to 4Hz, preferably about 2 Hz.

Results: the following coating rates were achieved:

■ ITO: 20 */sec.

■ aluminum: 130 to 160 */sec.

■ chromium: 140 */sec.

■ titanium: 100 */s.

■ tantalum: 106 */sec.

In FIG. 9, an erosion profile is depicted on a sputtering plane 15cm wide of a target arrangement on a sputtering source according to the invention. The outermost uniform machining allowance can be seen, wherein the "race track" and the erosion groove are hardly visible.

In FIG. 10, the final coating rate distribution in ITO sputter coating is shown for a sputter source according to the invention with five target arrangements, each with a sputter plane having a width B of 150 mm. In this arrangement, for a substrate positioned at a distance D of 120mm from the sputter source plane, there is only a film thickness deviation of only + 3.8% above it.

In fig. 11, the final film thickness distribution on a large flat glass substrate is shown, with specific coatings as follows:

total sputtering power P_tot: 2 kw.

-sputtering time: for 100 seconds.

-sputtering rate R: 26 */s, relative value 13 */s · kw.

The sputtering source has six target arrangements, the outermost target arrangement (P1, P6) being operated at a sputtering power which is 5 to 35% higher.

-substrate size: 650X 550mm²。

In fig. 11 the edge area of a substrate is recorded, which is located on a target arrangement working with higher efficiency. In the ITO coating film having an average film thickness of 267nm, the obtained film thickness variation was + 6.3%.

In the present invention, the following disadvantages of the known sputter sources are avoided in particular, in the coating of large flat workpieces:

■ since the present invention enables uniform distribution of process conditions over a large magnetron sputtering plane, high economy of large plane substrate coating can be achieved with higher coating rates and higher sputtering rates, and many individual substrates can be coated simultaneously if necessary.

■ A good film thickness distribution on the substrate is obtained and the formation of disturbances (arcing) is prevented due to the large-area simultaneous sputtering on the sputtering source of the invention.

■ since the problem of the distribution of reactive gases and/or the problem of the erosion distribution of the target in terms of uniformity is solved, the substrate to be coated can be placed relatively close to the sputter source and can have a relatively large coating plane for the sputter source plane, which considerably increases the economy of the sputter coating installation with the sputter source according to the invention.

■ on large planar targets, the problem of the difference in plasma density between the center of the target and the edge of the target is solved.

■ sputtering sources allow flexibility in adapting the modular target arrangement to various size requirements.

■ solves the problem of processing large planar targets, i.e., targets lacking reactive gas in the center, because the gas inlets 49 are distributed across the original sputter source plane.

■ (see fig. 4) because the support stand (41) is located between the process vacuum and the atmospheric pressure, it is not necessary to place a thicker cooling plate (23), although it is also loaded, which reduces the costs of the sputter source and enables in particular a better penetration of the magnetic field of the magnetic arrangement (47, 43) which is placed below the target arrangement (3).

By selectively controlling the following distribution:

■ time and/or location distribution of target device electrical operation

■ time and/or location distribution of magnetic operation of target device

■ distribution of time and/or position of gas inflow

Optimal adjustment, in particular uniformity adjustment, of the final film thickness distribution on large planar substrates is possible.

■ the target device is pressed by the cooling medium pressure and works together with the bayonet joint placed, on the basis of which the replacement of the target device can be very simple and rapid and the large-area cooling can be very effective.

■ below the sputtering plane, bayonet mounts are provided, on the basis of which no fixtures are introduced beyond the sputtered material, in particular from the process chamber.

Claims (68)

1. Method for producing a coated substrate, in which the substrate is sputter coated by means of at least two fixed, elongated target arrangements electrically insulated from each other, which are arranged side by side along their long sides at a distance smaller than the width of the target arrangements, each target arrangement being electrically driven by means of its own electrical connection, and in which the substrate is arranged spaced apart from the target arrangements, above which a magnetron field is generated in each case, characterized in that: the magnetron field above each target device is respectively and adjustably changed with time, and the surface F of the substrate to be coated_S≥900cm²And (7) coating.

2. A method according to claim 1, characterized in that: the electric field across the target device is generated by anodes located between the long sides of the target device and/or located on the front side of the target device.

3. A method according to claim 1, characterized in that: the magnetron fields are generated together by means of local stationary magnetic means, which are frames with electromagnets and/or permanent magnets surrounding the target arrangement.

4. A method according to claim 3, characterized in that: the magnet of the frame is a permanent magnet.

5. A method according to claim 3, characterized in that: the magnetic means are frames with electromagnets and/or permanent magnets, respectively, surrounding the target device.

6. The method according to claim 5, characterized in that: the magnet of the frame is a permanent magnet.

7. A method according to claim 1, characterized in that: changing the vertex position of the magnetron field.

8. Method according to one of claims 1 to 7, characterized in that: gas is introduced from gas outlets located discretely along the long sides of the target assembly, wherein the gas outlets are in communication with a gas distribution system.

9. Method according to one of claims 1 to 7, characterized in that: the magnetron field is formed such that the magnetron field varies with position within a longitudinal edge region of the target arrangement along a length direction of the target arrangement.

10. Method according to one of claims 1 to 7, characterized in that: sputtering plane F of target device_QWith the surface F of the substrate to be coated_SRatio V of_QSIs a V_QS≤3。

11. A method according to claim 10, characterized in that: v_QS≥2。

12. A method according to claim 10, characterized in that: v is more than or equal to 1.5_QS≤2。

13. Method according to one of claims 1 to 7, characterized in that: the target devices are powered by generators that are controlled independently of each other.

14. Method according to one of claims 1 to 7, characterized in that: more than two target devices are set up and at least two target devices are powered by means of a common alternator.

15. Method according to one of claims 1 to 7, characterized in that: adopting a direct current generator, an alternating current generator or a generator which generates alternating current or pulsating direct current superposed with direct current as the at least one generator; or a dc generator connected to the associated target device via a chopper unit.

16. Method according to one of claims 1 to 7, characterized in that: reactive and/or working gases are introduced between at least a portion of the target devices through the gas outlets.

17. The method of claim 16, wherein: at least some of the gas outlets distributed along the target device have their gas flow controlled independently of the gas flow of other outlets.

18. Method according to one of claims 1 to 7, characterized in that: at least three target arrangements are provided, the outer target arrangement using a higher sputtering power than the inner target arrangement.

19. The method of claim 18, wherein: the outer target arrangement uses 5% -35% higher sputtering power than the inner target arrangement.

20. The method of claim 19, wherein: the target arrangement located on the outer side uses a sputtering power which is 10% -20% higher than the target arrangement located on the inner side.

21. Method according to one of claims 1 to 7, characterized in that: the magnetron field was varied in a rhythm of 1 to 4 Hz.

22. The method of claim 21, wherein: the magnetron field was varied at a rhythm of 2 Hz.

23. Method according to one of claims 1 to 7, characterized in that: the film thickness distribution on the substrate surface is adjusted by controlling the power feeding and/or gas inflow distribution and/or magnetic field distribution of each target device.

24. The method of claim 23, wherein: the film thickness distribution on the substrate surface is uniformly adjusted.

25. According to claims 1-7A method characterized by: the sputtering power density p is set to be 1W/cm²≤p≤30W/cm²。

26. The method of claim 25, wherein: setting the power density p to 1W/cm for reactive sputter coating with a metal target²≤p≤5W/cm²。

27. The method of claim 25, wherein: setting power density p to 15W/cm for metal sputter coating²≤p≤30W/cm²。

28. Method according to one of claims 1 to 7, characterized in that: and carrying out reactive sputtering coating on the substrate.

29. The method of claim 28, wherein: the substrate is reactively sputter coated from a metal target.

30. The method of claim 28, wherein: and carrying out reactive sputtering coating on the substrate by using indium tin oxide.

31. Method according to one of claims 1 to 7, characterized in that: the coating film is applied using a reactive deposition film for manufacturing a flat panel display substrate.

32. The method of claim 31, wherein: the flat display substrate is a thin film transistor or an ion display panel flat substrate composed of glass.

33. The method of claim 31, wherein: and coating with an indium tin oxide layer.

34. A magnetron sputter source for carrying out the method according to claim 1, with at least two mutually electrically insulated, fixed and longitudinally extending target arrangements which are placed side by side along their long sides at a spacing which is smaller than the width of the target arrangements, wherein each target arrangement has its own electrical connection, characterized in that: each target arrangement has a controllable magnetic arrangement by means of which a time-varying magnetron field is generated above each target arrangement.

35. The sputter source of claim 34, wherein: the anode means comprises an anode located on the long side between the target means or an anode located on the front side of the target means.

36. The sputter source of claim 34, wherein: a stationary magnetic device (47) is positioned, which includes a frame with electromagnets and/or permanent magnets surrounding the target device.

37. The sputter source of claim 36, wherein: the magnet of the frame is a permanent magnet.

38. The sputter source of claim 34, wherein: the magnetic means comprise a plurality of frames with electromagnets and/or permanent magnets, respectively, surrounding the target device.

39. The sputter source of claim 38, wherein: the magnets of the plurality of frames are permanent magnets.

40. The sputter source of claim 34, wherein: a magnetic device is arranged below each target device and is used for changing the vertex position of the tunnel-shaped surrounding magnetron field; the magnetic means are constructed from selectively controllable and/or movable electromagnets, and/or from movable permanent magnets.

41. The sputter source of any of claims 34 to 40, wherein: the target device (3) is mounted on a support frame (41), a coolant line (35) being mounted on the support frame (41), the coolant line (35) being sealed off by means of a film (37) against the target device (3).

42. The sputter source of any of claims 34 to 40, wherein: gas outlet holes (49) are distributed along the long sides of the target device and are connected to a gas distribution system (64).

43. The sputter source of any of claims 34 to 40, wherein: the target devices (3) are spaced apart from one another by a distance d of at most 15% of their width B.

44. The sputter source of claim 43, wherein: the target devices (3) are spaced apart from one another by a distance d of at most 10% of their width B.

45. The sputter source of claim 44, wherein: the target devices (3) are spaced apart from one another by a distance d of at most 7% of their width B.

46. The sputter source of any of claims 34 to 40, wherein: the length L of the target device (3) is greater than its width B.

47. The sputter source of claim 45, wherein: the length L is more than or equal to 400mm and less than or equal to 2000 mm.

48. The sputter source of any of claims 34 to 40, wherein: the target devices being spaced apart from one another by a distance d

1mm≤d≤230mm。

49. The sputter source of claim 48, wherein: the distance d is not less than 7mm and not more than 20 mm.

50. The sputter source of any of claims 34 to 40, wherein: the width B of the target device is

60mm≤B≤350mm。

51. The sputter source of claim 50, wherein: the width B is more than or equal to 80mm and less than or equal to 200 mm.

52. The sputter source of any of claims 34 to 40, wherein: the new plane of the target device (3) is placed along one plane.

53. The sputter source of any of claims 34 to 40, wherein: the magnetic field strength H varies from location to location along the length of the target arrangement and within the long edge regions thereof.

54. The sputter source of any of claims 34 to 40, wherein: the target device (3) is provided with a common magnetic frame (47) or each with a magnetic frame, and the magnetic position and/or strength of one or more frames (47) varies from one position to another along at least a part of the length side of the target device.

55. The sputter source of any of claims 34 to 40, wherein: at least two magnet rollers (43) extending in the length direction and driven to rotate are arranged below the target device (3); the strength and/or position of the magnetism is different from location to location along at least a portion of the drum (43), wherein the magnets of the drum are permanent magnets.

56. The sputter source of any of claims 34 to 40, wherein: the target device is fixed by means of linear bayonet fittings (25, 32).

57. The sputter source of any of claims 34 to 40, wherein: more than two target devices are mounted.

58. Sputter coating chamber with a magnetron sputtering source (10) according to claim 34 and a magnetron sputtering source arranged spaced apart from the magnetron sputtering source and adapted for at least one substrate surface F having a surface to be coated_SA substrate support (66) for a sputter-coated substrate, wherein a sputtering plane F for sputtering is formed_QWith the surface F of the substrate to be coated_SRatio V of_QSIs a V_QS≤3。

59. The coating chamber of claim 58 wherein: v_QS≤2。

60. The coating chamber of claim 59 wherein: VQS is more than or equal to 1.5 and less than or equal to 2.

61. The coating chamber of claim 58 wherein: the distance D between the new plane (10) of the magnetron sputtering source and the substrate is equal to the width of the long target device (3).

62. The coating chamber of claim 61 wherein: d is more than or equal to 60mm and less than or equal to 250 mm.

63. The coating chamber of claim 62 wherein: d is more than or equal to 80mm and less than or equal to 160 mm.

64. Vacuum coating apparatus having a coating chamber according to claim 58, wherein the target device (3) is connected to generators (62) controlled independently of each other.

65. The apparatus of claim 64, wherein: more than two target devices (3) are located on the substrate source and at least two of the located target devices (3) are connected to the output of a common alternator (15, 17).

66. The apparatus of claim 64, wherein: at least one of the generators (9, 62) is a direct current generator, an alternating current generator, or a generator which generates alternating current or pulsating direct current with superimposed direct current; alternatively, at least one of the generators is a dc generator and is connected to the target device (3) via a chopper unit.

67. Apparatus according to any one of claims 64 to 66, wherein: gas outlet holes (49) are arranged at least on the length side between a part of the target device and are connected with a reactive gas storage tank and/or a working gas storage tank (53).

68. The apparatus of claim 67, wherein: at least a portion of the gas outlet holes (49) disposed in a distributed manner along the target assembly (3) are independently controlled with respect to gas flow (51, 64).