HK1032671B - Semiconductor device, method of manufacture thereof, circuit board, and electronic device - Google Patents

Description

Semiconductor device, method of manufacturing the same, circuit board, and electronic device

Technical Field

The invention relates to a semiconductor device, a method of manufacturing the same, a circuit board, and an electronic device.

Background

With the recent miniaturization of electronic devices, there is a demand for packaging of semiconductor devices suitable for high-density mounting. To cope with this situation, surface mount packages such as BGA (ball grid array) and CSP (chip scale package) have been developed. In a surface mount package, a substrate having a wiring pattern formed thereon and connected to a semiconductor chip is sometimes used.

In the surface mounting type package, it is required to prevent the intrusion of moisture without forming a gap between the semiconductor chip and the substrate.

The present invention has been made to solve the above-described problems, and an object thereof is to provide a method for manufacturing a semiconductor device having excellent reliability and productivity, and a semiconductor device, a circuit board, and an electronic device manufactured by the method.

Disclosure of the invention

(1) The method for manufacturing a semiconductor device according to the present invention includes: a 1 st step of interposing an adhesive between a surface of the substrate on which the wiring pattern is formed and a surface of the semiconductor element on which the electrode is formed; and a 2 nd step of applying pressure between the semiconductor element and the substrate to electrically conduct the wiring pattern and the electrode and to wrap the adhesive around at least a part of a side surface of the semiconductor element.

According to the present invention, since the adhesive covers at least a part of the side surface of the semiconductor element, the semiconductor element can be protected from mechanical damage, and in addition, moisture can be prevented from reaching the electrode, and the electrode can be prevented from being corroded.

(2) In the method of manufacturing a semiconductor device, the adhesive may be provided in a thickness larger than a distance between the semiconductor element and the substrate after the end of the step 2 in the step 1, and the adhesive may be pressed between the semiconductor element and the substrate to protrude from the semiconductor element in the step 2.

(3) In the method of manufacturing a semiconductor device, the adhesive may be formed so as to substantially cover a side surface of the semiconductor element.

(4) In the method of manufacturing a semiconductor device, conductive particles may be dispersed in the adhesive, and the wiring pattern and the electrode may be conductively connected by the conductive particles.

In this manner, since the wiring pattern and the electrode are conductively connected by the conductive particles, the semiconductor device can be manufactured with good reliability and productivity.

(5) In the method of manufacturing a semiconductor device, the adhesive may be provided on the surface of the semiconductor element on which the electrode is formed, in advance, before the step 1.

(6) In the method of manufacturing a semiconductor device, the adhesive may be provided on the surface of the substrate on which the wiring pattern is formed in advance before the step 1.

(7) In the method for manufacturing a semiconductor device, the adhesive may contain a light-shielding material.

According to this, since the adhesive contains the light-shielding material, light scattering toward the surface of the semiconductor element having the electrode can be shielded. Thus, malfunction of the semiconductor element can be prevented.

(8) The semiconductor device according to the present invention includes: a semiconductor element having an electrode; a wiring pattern formed on the substrate; and an adhesive agent that is electrically conductive to the wiring pattern, the adhesive agent being interposed between a surface of the substrate on which the wiring pattern is formed and a surface of the semiconductor element on which the electrode is formed, and covering at least a part of a side surface of the semiconductor element.

In this case, the adhesive covers at least a part of the side surface of the semiconductor element, so that the semiconductor element can be protected from mechanical damage. In addition, since the semiconductor element is covered with the adhesive at a position away from the electrode, moisture hardly reaches the electrode, and the electrode can be prevented from being corroded.

(9) In the semiconductor device, the adhesive may be formed so as to substantially cover a side surface of the semiconductor element.

(10) In the semiconductor device, the conductive particles may be dispersed in the adhesive to constitute an anisotropic conductive material.

In this regard, since the wiring pattern and the electrode are conductively connected by the anisotropic conductive material, the reliability and the productivity are excellent.

(11) In the semiconductor device, the anisotropic conductive material may be provided so as to cover the entire wiring pattern.

(12) In the semiconductor device, the adhesive may contain a light-shielding material.

According to this, since the adhesive contains the light-shielding material, light scattering toward the surface of the semiconductor element having the electrode can be shielded. Thus, malfunction of the semiconductor element can be prevented.

(13) The semiconductor device related to the present invention is manufactured by the above method.

(14) The semiconductor device is mounted on a circuit board according to the present invention.

(15) The electronic device according to the present invention includes the circuit board.

Brief description of the drawings

Fig. 1A to 1D are diagrams illustrating a method of manufacturing a semiconductor device according to the 1 st reference form, fig. 2A and 2B are diagrams illustrating a modification of the 1 st reference form, fig. 3A and 3B are diagrams illustrating a method of manufacturing a semiconductor device according to the 2 nd reference form, fig. 4A and 4B are diagrams illustrating a method of manufacturing a semiconductor device according to the 3 rd reference form, fig. 5A and 5B are diagrams illustrating a method of manufacturing a semiconductor device according to the present embodiment, fig. 6 is a diagram illustrating a circuit board on which a semiconductor device according to the present embodiment is mounted, and fig. 7 is a diagram illustrating an electronic device including a circuit board on which a semiconductor device according to the present embodiment is mounted.

Best mode for carrying out the invention

Preferred embodiments of the present invention will be described below with reference to the drawings. Fig. 5A and 5B show an embodiment of the present invention. In the practice of the present invention, the following reference forms can be applied.

(reference form 1)

Fig. 1A to 1D are diagrams illustrating a method of manufacturing a semiconductor device according to reference mode 1. In the present reference form, as shown in fig. 1A, a substrate 12 having a wiring pattern 10 formed on at least one surface 18 is used.

The substrate 12 may be any of a substrate made of an organic material such as a flexible substrate, a substrate made of an inorganic material such as a metal substrate, or a substrate formed by combining both of them. As the flexible substrate, a tape carrier (tape carrier) can be used. When the substrate 12 has high conductivity, an insulating film is formed between the substrate 12 and the wiring pattern 10, inside the through hole 14, or on the surface opposite to the surface on which the wiring pattern 10 is formed.

A through-hole 14 is formed on the substrate 12, and the wiring pattern 10 is formed across the through-hole 14. Further, as a part of the wiring pattern 10, a land 17 for forming an external electrode is formed on the via hole 14.

If such a substrate 12 is prepared, an anisotropic conductive material 16 is provided on the substrate 12 as an example of an adhesive. In the following description, the anisotropic conductive material is an example of an adhesive. The anisotropic conductive material 16 is a material in which conductive particles (conductive filler) are dispersed in an adhesive (binder), and a dispersant may be added. The anisotropic conductive material 16 may be formed in a sheet shape in advance and then attached to the substrate 12, or may be provided directly on the substrate 12 in a liquid state. Further, the anisotropic conductive material 16 may be provided to be larger than the face 24 of the semiconductor element 20 having the electrode 22, but may be provided to be smaller than the face 24 in an amount to be overflowed from the face 24 by being pressed.

Alternatively, the anisotropic conductive material 16 may be provided on the surface 24 of the semiconductor element 20 in an amount that overflows from the surface 24 by being pressed. Further, even if an adhesive containing no conductive particles is used, the electrode 22 and the wiring pattern 10 can be electrically connected.

In the present reference mode, a thermosetting adhesive can be used as the anisotropic conductive material, and the anisotropic conductive material 16 may contain a light-shielding material. As the light-shielding material, for example, a material in which a black dye or a black pigment is dispersed in a binder resin can be used.

As the adhesive used, a thermosetting adhesive typified by epoxy-based adhesives may be used, and a photo-curable adhesive typified by epoxy-based or acrylic-based adhesives may be used. Further, an electron beam hardening type, a thermoplastic (thermal bonding) type adhesive may also be used. In the case of using an adhesive other than the thermosetting type, energy may be applied instead of heating or pressing in all the embodiments described below.

Next, the semiconductor element 20 is placed, for example, on the anisotropic conductive material 16. In detail, the semiconductor element 20 is placed with the face 24 of the semiconductor element 20 having the electrode 22 facing the anisotropic conductive material 16. The semiconductor element 20 is arranged such that the electrode 22 is positioned on a bonding pad (not shown) for electrode connection of the wiring pattern 10. The electrodes 22 may be formed only on two sides of the semiconductor element 20, or the electrodes 22 may be formed on four sides. As the electrode 22, an electrode in which a bump of gold, solder or the like is provided on an aluminum land (pad) is often used, but a bump formed by etching the above-described bump or the wiring pattern 10 on the wiring pattern 10 side may be used.

Through the above steps, the anisotropic conductive material 16 is interposed between the surface 24 of the semiconductor element 20 on which the electrode 22 is formed and the surface 18 of the substrate 12 on which the wiring pattern 10 is formed. Then, the jig 30 is pressed against the surface 26 opposite to the surface 24 on which the electrode 22 is formed, and the semiconductor element 20 is pressed in the direction of the substrate 12. Alternatively, pressure is applied between the semiconductor element 20 and the substrate 12. The anisotropic conductive material 16, which is an example of an adhesive, is provided in the region of the surface 24 of the semiconductor element 20, and is protruded from the surface 24 by pressure. The jig 30 incorporates a heater 32 to heat the semiconductor element 20. Further, as the jig 30, if it is considered that heat is also applied to the portion of the anisotropic conductive material 16 which has overflowed as much as possible, it is preferable to use a jig having a plane area larger than that of the semiconductor element 20. By so doing, heat is easily applied to the periphery of the semiconductor element 20.

Thus, as shown in fig. 1B, the electrode 22 of the semiconductor element 20 and the wiring pattern 10 are conductively connected through the conductive particles of the anisotropic conductive material 16. According to the present reference mode, since the wiring pattern 10 and the electrode 22 are conductively connected by the anisotropic conductive material 16, the semiconductor device can be manufactured by a method excellent in reliability and productivity.

Further, since the semiconductor element 20 is heated by the jig 30, the anisotropic conductive material 16 is hardened in the region in contact with the semiconductor element 20. However, in this state, since heat does not reach the anisotropic conductive material 16 in a region not in contact with the semiconductor element 20 or a region away from the semiconductor element 20, it is not completely cured. The hardening of this area is performed by the following procedure.

As shown in fig. 1C, solder 34 is provided in and near the through-hole 14 of the substrate 12. The solder 34 can be provided by printing using solder paste, for example. In addition, a solder ball formed in advance may be placed at the above position.

Next, the solder 34 is heated in a reflow process, as shown in fig. 1D, to form solder balls 36. The solder balls 36 become external electrodes. In this reflow step, not only the solder 34 but also the anisotropic conductive material 16 is heated. With this heat, the uncured region of the anisotropic conductive material 16 is also cured. That is, in the anisotropic conductive material 16, a region not in contact with the semiconductor element 20 or a region separated from the semiconductor element 20 is cured by a reflow process for forming the solder ball 36.

According to the semiconductor device 1 thus obtained, since all the anisotropic conductive material 16 is cured, the anisotropic conductive material 16 is prevented from peeling off from the substrate 12 at the outer peripheral portion of the semiconductor element 20 and from moisture entering the wiring pattern 10 to cause migration (migration). In addition, since the entire anisotropic conductive material 16 is hardened, moisture can be prevented from being contained in the anisotropic conductive material 16.

In the semiconductor device 1, the surface 24 of the semiconductor element 20 having the electrode 22 is covered with the anisotropic conductive material 16 containing a light-shielding material, so that light scattering toward the surface 24 can be prevented. This prevents malfunction of the semiconductor element 20.

Fig. 2A and 2B are diagrams illustrating a modification of the 1 st reference mode. In this modification, the same reference numerals are used for the same components as those in reference example 1, and the description of the components and the effects due to the components will be omitted. This point is also the same in the following embodiments.

The process shown in fig. 2A is performed after the process of fig. 1B and before the process of fig. 1C. Specifically, the heating jig 38 is used to heat the region of the anisotropic conductive material 16 that is not in contact with the semiconductor element 20 or the region that is away from the semiconductor element 20. It is preferable to provide a release layer 39 made of polytetrafluoroethylene having high releasability from the anisotropic conductive material 16, which is an example of an adhesive, so that the uncured anisotropic conductive material 16 is less likely to adhere to the heating jig 38. Alternatively, the release layer 39 may be provided on the anisotropic conductive material 16 as an example of the adhesive. The anisotropic conductive material 16, which is an example of an adhesive, may be heated without being in contact therewith. By so doing, a region of the anisotropic conductive material 16 that is not in contact with the semiconductor element 20 or a region that is away from the semiconductor element 20 can be hardened. Instead of the jig, a hot air or an optical heater capable of partially heating may be used.

Alternatively, as shown in fig. 2B, a reflow process for electrically conductively bonding electronic component 40, which is different from semiconductor element 20, to wiring pattern 10 may be performed after the process of fig. 1B and before the process of fig. 1C. In this reflow step, a region of the anisotropic conductive material 16 that is not in contact with the semiconductor element 20 or a region that is separated from the semiconductor element 20 is heated and cured. Examples of the electronic component 40 include a resistor, a capacitor, a coil, an oscillator, a filter, a temperature sensor, a thermistor, a varistor, a potentiometer, and a fuse.

Since all the anisotropic conductive material 16 can be cured by these modifications, the anisotropic conductive material 16 can be prevented from peeling off from the substrate 12 and from moisture entering, thereby preventing the wiring pattern 10 from migrating. In addition, since the entire anisotropic conductive material 16 is hardened, moisture can be prevented from being contained.

After the above-described steps, the substrate 12 may be cut in a region where the anisotropic conductive material 16, which is an example of an adhesive, protrudes from the semiconductor element 20.

In the present reference mode, an example of using a single-sided wiring board as the substrate 12 is described, but the present invention is not limited thereto, and a double-sided wiring board or a multilayer wiring board may be used. In this case, the solder ball is not formed in the through hole, but formed on the land provided on the surface opposite to the semiconductor element mounting surface. In addition, other conductive bumps may be used instead of solder balls. Further, the semiconductor element and the substrate may be connected by wire bonding. The same applies to the following embodiments.

In the present embodiment, not only the anisotropic conductive material 16 as an example of a thermosetting adhesive but also the anisotropic conductive material 16 as an example of a thermoplastic adhesive can be used. The thermoplastic adhesive can be hardened after cooling. Alternatively, an adhesive that is cured by radiation such as ultraviolet rays may be used. This point is also the same in the following embodiments.

(reference form 2)

Fig. 3A and 3B are diagrams illustrating a method of manufacturing a semiconductor device according to the 2 nd reference mode. This reference mode is performed following the reference mode 1.

That is, in the present reference embodiment, following the step of fig. 1D, as shown in fig. 3A, the anisotropic conductive material 16 and the substrate 12 are cut by the movable blade 42 in a slightly larger size than the semiconductor element 20 while being pressed by the fixed blade 41, and the semiconductor device 2 shown in fig. 3B is obtained. The cutting means is not limited thereto, and may be applied if there are other cutting means and fixing means. Since the substrate 12 is cut together with the anisotropic conductive material 16, the cut surfaces of the two are the same, and the anisotropic conductive material 16 covers the entire surface of the substrate 12. Furthermore, since the wiring pattern 10 is not exposed, moisture does not reach the wiring pattern 10, and migration can be prevented.

In addition, according to the present reference mode, since the anisotropic conductive material 16 is cut, it is not necessary to cut the semiconductor element 20 in advance to have a size equal to or slightly larger than the size thereof, and it is not necessary to accurately overlap the position thereof so as to correspond to the position of the semiconductor element 20.

Note that, although the present reference embodiment is an example in which the anisotropic conductive material 16 and the substrate 12 are cut after the solder balls 36 are formed, the timing of cutting may be any time regardless of the formation of the solder balls 36 as long as at least the semiconductor element 20 is placed on the anisotropic conductive material 16. However, the anisotropic conductive material 16 is preferably hardened at least in the contact area with the semiconductor element 20. In this case, the semiconductor element 20 and the wiring pattern 10 can be prevented from being displaced. In addition, the cutting process of the anisotropic conductive material 16 in the cured state is easier than in the uncured state at the cut portion.

Further, if the substrate 12 is cut, the entire anisotropic conductive material 16 as an example of the adhesive can be cured at once. For example, when the electrode 22 of the semiconductor element 20 and the wiring pattern 10 are electrically connected, the entire anisotropic conductive material 16 as an example of the adhesive may be heated or cooled. When a thermosetting adhesive is used, specifically, a jig that comes into contact with both the semiconductor element 20 and the adhesive that has overflowed from the semiconductor element 20 may be used. Alternatively, an oven may be used for heating.

(reference form 3)

Fig. 4A and 4B are diagrams illustrating a method of manufacturing a semiconductor device according to reference example 3. In the present reference embodiment, the substrate 12 of reference embodiment 1 is used, and the protective layer 50 is formed on the substrate 12. Since the protective layer 50 covers the wiring pattern 10 from moisture, a flux etchant is used, for example.

The protective layer 50 is formed except for a region 52 wider than a region for mounting the semiconductor element 20 on the substrate 12. That is, the region 52 is larger than the surface 24 of the semiconductor element 20 having the electrode 22, and a bonding pad (not shown) for connection to the electrode 22 of the semiconductor element 20 is formed on the wiring pattern 10 in the region 52. Alternatively, the protective layer 50 may be formed so as to avoid at least the conductive connection portion with the electrode 22 of the semiconductor element 20.

On such a substrate 12, an anisotropic conductive material 54 (adhesive) made of an optional material is provided as the anisotropic conductive material 16 of the 1 st reference mode. Note that the anisotropic conductive material 54 does not necessarily contain a light-shielding material, but if it contains a light-shielding material, the same effect as in reference example 1 can be obtained.

In the present reference form, the anisotropic conductive material 54 is provided from the mounting region of the semiconductor element 20 to the protective layer 50. That is, the anisotropic conductive material 54 is formed so as to cover the wiring pattern 10 and the substrate 12 in the region 52 where the protective layer 50 is not formed, and to overlap the end of the region 52 where the protective layer 50 is formed. Alternatively, the anisotropic conductive material 54 may be provided on the semiconductor element 20 side as an example of an adhesive. In detail, the description of the reference mode 1 can be applied.

Then, as shown in fig. 4A, the semiconductor element 20 is pressed and heated in the direction of the substrate 12 by the jig 30. Alternatively, pressure is applied at least between the semiconductor element 20 and the substrate 12. Thus, as shown in fig. 4B, the electrode 22 of the semiconductor element 20 is conductively connected to the wiring pattern 10. Thereafter, solder balls are formed by the same steps as those shown in fig. 1C and 1D, and a semiconductor device can be obtained.

According to the present reference aspect, the anisotropic conductive material 54 is formed not only in the region 52 where the protective layer 50 is not formed, but also overlapping on the end of the region 52 where the protective layer 50 is formed. Therefore, since no gap is formed between the anisotropic conductive material 54 and the protective layer 50, the wiring pattern 10 is not exposed, and the migration phenomenon can be prevented.

In the present reference embodiment, it is also preferable to cure the anisotropic conductive material 54 in the region that protrudes from the semiconductor element 20. The same procedure as in reference example 1 can be applied to this hardening procedure.

(this embodiment)

Fig. 5A and 5B are diagrams illustrating a method of manufacturing a semiconductor device according to the present embodiment. In the present embodiment, the substrate 12 of reference mode 1 is used, and the anisotropic conductive material 56 (adhesive) is provided on the substrate 12. In the present embodiment, the anisotropic conductive material 56 may be different in thickness from that of the reference embodiment 1. That is, as shown in fig. 5A, in the present embodiment, the thickness of the anisotropic conductive material 56 is thicker than the thickness of the anisotropic conductive material 16 shown in fig. 1A. Specifically, the thickness of the anisotropic conductive material 56 is larger than the distance between the surface 24 of the semiconductor element 20 having the electrode 22 and the wiring pattern 10 formed on the substrate 12. In addition, the anisotropic conductive material 56 is at least somewhat larger than the semiconductor element 20. The conditions for the thickness and the size may be at least one of satisfied.

Then, as shown in fig. 5A, the semiconductor element 20 is pressed and heated in the direction of the substrate 12 by the jig 30. If this is done, the anisotropic conductive material 56 wraps around a portion or all of the side surfaces 28 of the semiconductor element 20 as shown in fig. 5B. Thereafter, solder balls are formed by the same steps as those shown in fig. 1C and 1D, and a semiconductor device can be obtained.

According to the present embodiment, since at least a part of the side surface 28 of the semiconductor element 20 is covered with the anisotropic conductive material 56, the semiconductor element 20 can be protected from mechanical damage, and in addition, since the anisotropic conductive material 56 is covered at a position away from the electrode 22, the electrode 22 and the like can be prevented from being corroded.

The above embodiment has been described mainly about CSP (chip scale/size package) of FDB (flip chip bonding), but the present invention is applicable to semiconductor devices to which FDB is applied, for example, semiconductor devices to which COF (chip on film) and COB (chip on board) are applied.

Fig. 6 shows a circuit board 1000 on which a semiconductor device 1100 manufactured by the method according to the above-described embodiment is mounted. As the circuit substrate 1000, an organic substrate such as a glass epoxy substrate is generally used. A wiring pattern made of, for example, copper is formed on the circuit board 1000 so as to form a desired circuit. The wiring pattern and the semiconductor device 1100 are mechanically connected to each other, whereby conduction between the wiring pattern and the semiconductor device is achieved.

Further, since the mounting area of the semiconductor device 1100 can be reduced to the area for mounting with a bare chip, if the circuit board 1000 is used in an electronic device, the electronic device itself can be miniaturized. Further, a larger installation space can be secured in the same area, and high functionality can be achieved.

Fig. 7 shows a notebook personal computer 1200 as an electronic device including the circuit board 1000.

The present invention can be applied to various surface-mount electronic components, regardless of whether they are active components or passive components. Examples of the electronic component include a resistor, a capacitor, a coil, an oscillator, a filter, a temperature sensor, a thermistor, a varistor, a potentiometer, and a fuse.

Claims (14)

1. A method for manufacturing a semiconductor device, comprising:

a 1 st step of interposing an adhesive between a surface of the substrate on which the wiring pattern is formed and a surface of the semiconductor element on which the electrode is formed; and

and a 2 nd step of applying pressure between the semiconductor element and the substrate to conductively connect the wiring pattern and the electrode, and winding the adhesive around the entire side surface of the semiconductor element.

2. The method for manufacturing a semiconductor device according to claim 1, wherein:

the adhesive is provided in a thickness larger than a distance between the semiconductor element and the substrate after the end of the step 2 in the step 1, and is pressed between the semiconductor element and the substrate in the step 2 to overflow from the semiconductor element.

3. The method for manufacturing a semiconductor device according to claim 1, wherein:

after the step 2, the method further includes a step of cutting the substrate in a region other than a region where the adhesive and the semiconductor element are in contact with each other.

4. The method for manufacturing a semiconductor device according to claim 1, wherein:

conductive particles are dispersed in the adhesive, and the wiring pattern and the electrode are conductively connected by the conductive particles.

5. The method for manufacturing a semiconductor device according to claim 1, wherein:

the adhesive is provided on the surface of the semiconductor element on which the electrode is formed in advance before the step 1.

6. The method for manufacturing a semiconductor device according to claim 1, wherein:

the adhesive is provided on the surface of the substrate on which the wiring pattern is formed in advance before the step 1.

7. The method for manufacturing a semiconductor device according to claim 1, wherein:

the adhesive contains a light-shielding material.

8. A semiconductor device, characterized by comprising:

a semiconductor element having an electrode;

a wiring pattern formed on the substrate; and

an adhesive agent is added to the mixture,

wherein the electrode is electrically conductively connected to the wiring pattern,

the adhesive is interposed between the surface of the substrate on which the wiring pattern is formed and the surface of the semiconductor element on which the electrode is formed, and covers the entire side surface of the semiconductor element.

9. The semiconductor device according to claim 8, wherein:

the conductive particles are dispersed in the adhesive to constitute an anisotropic conductive material.

10. The semiconductor device according to claim 9, wherein:

the anisotropic conductive material is provided so as to cover the entire wiring pattern.

11. The semiconductor device according to claim 10, wherein:

the adhesive contains a light-shielding material.

12. A semiconductor device, characterized in that:

manufactured by a method as claimed in any one of claims 1 to 7.

13. A circuit substrate, characterized in that:

a semiconductor device as set forth in any one of claim 8 through claim 11 is mounted.

14. An electronic device, characterized in that:

having a circuit substrate as claimed in claim 13.