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HK1008114B - Aluminum alloy semiconductor packages - Google Patents

Aluminum alloy semiconductor packages Download PDF

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Publication number
HK1008114B
HK1008114B HK98107155.9A HK98107155A HK1008114B HK 1008114 B HK1008114 B HK 1008114B HK 98107155 A HK98107155 A HK 98107155A HK 1008114 B HK1008114 B HK 1008114B
Authority
HK
Hong Kong
Prior art keywords
component
cover
aluminum
package
adhesive
Prior art date
Application number
HK98107155.9A
Other languages
German (de)
French (fr)
Chinese (zh)
Other versions
HK1008114A1 (en
Inventor
Mahulikar Deepak
M. Popplewell James
Original Assignee
Ait International Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/253,639 external-priority patent/US4939316A/en
Application filed by Ait International Ltd. filed Critical Ait International Ltd.
Publication of HK1008114B publication Critical patent/HK1008114B/en
Publication of HK1008114A1 publication Critical patent/HK1008114A1/en

Links

Description

This invention relates to semiconductor packages in general and, more particularly, to light weight non-hermetic packages having improved corrosion resistance.
In the electronics industry, the rapid development and extensive use of integrated circuits, such as silicon based semiconductor devices have resulted in a proliferation of package designs to house electronic devices. The packages may be broadly categorized as either hermetic or non-hermetic.
Hermetic packages are generally formed from ceramic or metal components and are usually glass sealed. An example of a hermetic package is the CERDIP, ceramic dual-in-line package.
Non-hermetic packages are generally formed from ceramic, metal or plastic components and are usually epoxy sealed. Non-hermetic packages are also formed by molding a plastic body about the electronic device.
Metal non-hermetic packages comprise metal base and cover components with or without a window frame. A leadframe is disposed either between the base component and the cover component or between the base component and the window frame. The package components are bonded together with a polymer adhesive such as epoxy.
Epoxy sealed non-hermetic packages are disclosed in U.S. Patent No. 4,105,861 issued to Hascoe and U.S. Patent No. 4,594,770 issued to Butt. Copper or a copper alloy is preferred in U.S. Patent No. 4,594,770 due to the high thermal conductivity of the metal.
It is desirable to maximize the strength of the epoxy to metal bond. One method of improving the adhesive to metal bond is to coat the metal components with a second material which forms a stronger bond to the metal substrate. The second material may be deposited by cladding, plating, sputtering, vapor deposition or any other technique known in the art. The bond may be further strengthened by a post deposition treatment such as oxidation or passivation. Coating of a copper based leadframe to improve resin adhesion is disclosed in U.S. Patent No. 4,707,724 issued to Suzuki et al.
A molded plastic package has insufficient thermal conductivity for high power circuits which generate a large quantity of heat during operation. Copper base and cover components may add too much weight for applications such as aerospace.
An aluminum based metal package would have a significant advantage over copper based metal packages. The weight of the assembled package is up to about 60% less than that of the comparable copper package. Weight is important in aerospace, military and outer space applications where a large number of electronic devices are utilized and a significant weight penalty exists.
Until now, aluminum and aluminum alloys have not been satisfactory for electronic packages due to the tendency of the metal to corrode. The assembled packages fail a salt spray corrosion test specified in Military-Standard-883.
The salt corrosion test comprises an aqueous solution containing 3% by weight sodium chloride. The solution is held at 35°C and the packages are immersed for 24 hours. Upon removal, the packages made from an aluminum based alloy exhibit numerous small corrosion pits. By comparison, a package made using copper alloy 197 having a nominal composition of 0.5% Fe, 0.035% Mg, 0.18% P and the balance copper exhibits no corrosion pitting after the same 24 hour salt corrosion test.
Patent Abstracts of Japan, vol. 13, no. 34 (E-708), 25th January 1989 (JP-A-63233551) discloses a package for an electronic device having a base component and a cover component which are coated with a thin layer of aluminum. The surface of the aluminum coating is, at least partially, anodically oxidized.
From US-A-4 656 499 a hermetically sealed semiconductor casing is known having a metal or metal alloy lead frame, a metal or metal alloy base member and a metal or metal alloy window frame. These components are glass or ceramic bonded, and have refractory oxide layers on their surfaces for improving bond strength.
In US-A-4 572 924 a glass sealed electronic package is described wherein layers of solder glass bond the lead frame to the base and to a metallic seal ring. The base and ring can be coated with thin layers of aluminum, and the surfaces of the base and coating can be roughened to promote bonding.
Degarmo, "Materials and Processes in Manufacturing", published by MacMillan (New York, USA), page 720, teaches that the corrosion resistance of aluminum is improved by providing an anodic oxide layer thereon.
In US-A-3 871 018 a semiconductor package is disclosed wherein a glass frit base layer is provided on the metal capping member. An adhesive is coated onto the glass layer, and the lead frame is secured to the metal capping member by curing the resin coating.
It is an object of the present invention to manufacture an electronic package from aluminum or aluminum based alloy components.
It is an advantage of the present invention that the aluminum or aluminum based alloy components have improved corrosion resistance.
It is a feature of the invention that the improved corrosion resistance is imparted by anodizing at least a portion of the aluminum or aluminum based alloy components prior to bonding.
It is an advantage of the invention that aluminum or aluminum based alloy package components weigh up to about 60% less than comparable copper or copper alloy components.
It is an advantage of the invention that the aluminum or aluminum based alloy components are less costly than comparable copper or copper alloy based components.
It is an advantage of the invention that the electronic device may be electrically isolated from the package components while high thermal conductivity is maintained.
In accordance with the invention, the foregoing objects, features and advantages are obtained by a package to encase an electronic device. The package comprises aluminum or aluminum alloy base and cover components. A leadframe is disposed between the base and cover components and adapted to be bonded to both. An anodization layer covers at least that portion of the base and cover components exposed to the atmosphere. The package is resin sealed. An improved seal is obtained by anodizing the seal areas of the base and cover components.
Accordingly, a light weight non-hermetic package comprising aluminum or aluminum based alloy components is claimed. Improved corrosion resistance is obtained by an anodization surface applied to at least a portion of the surfaces of the package components.
The package for encasing an electronic device according to the invention comprises an aluminum or aluminum alloy base component; an aluminum or aluminum alloy cover component; said base component and said cover component defining a cavity; a leadframe disposed between and bonded to said base component and to said cover component with a polymer adhesive; and an anodization layer covering at least that portion of said base and cover components exposed to the atmosphere.
According to the present invention there is further provided a process for assembling a package for encasing an electronic device comprising the steps of: providing a base component and a cover component, said base an cover components comprised of aluminum or an aluminum based alloy; anodizing at least that portion of the surfaces of said base and cover components exposed to the atmosphere; disposing a leadframe between said base component and said cover component; and bonding said leadframe to said base component and to said cover component with a polymer adhesive subsequent to connecting said electronic device to said base component and to said leadframe.
The package of the invention may also be provided in the form of a kit which allows that a vendor manufactures the package for shipment to a device maker. The kit comprises a metallic base component selected from the group consisting of aluminum and aluminum based alloys, said base component having a first surface and an opposing second surface, said first surface having at least selected portions thereof coated with an anodization layer for receiving a polymeric adhesive; and a metallic cover component selected from the group consisting of aluminum and aluminum based alloys, said cover component having a bonding surface for bonding to the first surface of said base component and an opposing surface, said bonding surface having an outer ring portion and an inner depressed or flat portion bordered by said ring portion, said ring portion coated with an anodization layer for receiving a polymeric adhesive.
It is known to form a refractory oxide such as aluminum oxide on the sealing surface of the alloy to enhance bonding. For example, U.S. Patent No. 4,542,259 issued to Butt discloses forming a refractory aluminum oxide coating on copper alloy CDA 63800 to enhance glass sealability. Copper alloy 63800 is a copper based alloy containing from about 2% to about 12% aluminum.
An anodized aluminum surface differs compositionally from a refractory aluminum oxide surface. The refractory oxide is anhydrous, or water free. The anodized surface comprises hydrated aluminum oxide. The water concentration varies from a trace up to about equal molar concentration with the aluminum oxide (Al2O3·H2O). The anodization is deposited by an electrochemical process rather than high temperature oxidation as usually used to form refractory oxide layers.
Unlike chemical deposition techniques such as plating, sputtering or vapor deposition, anodization is a chemical conversion process. A chemical conversion process forms a surface coating consisting of a compound of the base metal.
A better understanding of the essential features of the invention will be obtained from the following specification and accompanying drawings.
FIG. 1 illustrates an electronic package manufactured according to the invention.
FIG. 2 illustrates a window frame type electronic package manufactured according to the invention.
FIG. 1 illustrates an electronic package 10 adapted to house an electronic device 12. The electronic device 12 is typically an integrated circuit such as a silicon based semiconductor device. The package 10 is comprised of a base component 14 and a cover component 16. A depression 18 is optionally formed in the base component 14. A second depression 20 is optionally formed in the cover component 16. These depressions serve to form a cavity 22 to encase the electronic device 12. The depressions are usually formed by milling or chemical etching. Alternatively, a metal deformation process may be used to form the cavities.
The base component 14 and the cover component 16 are manufactured from aluminum or an aluminum alloy. Aluminum alloys designated by the ASM (American Society for Metals) as 3xxx series are preferred. These alloys contain up to about 1.5% by weight manganese along with other alloying elements. The alloys have good thermal conductivity and about 20% higher strength than the alloys designated as the lxxx series (greater than 99.00% aluminum). A most preferred aluminum alloy is aluminum alloy 3003 having a nominal composition of about 0.12% by weight copper, about 1.2% by weight manganese and the balance aluminum.
A leadframe 24 is disposed between the base component 14 and the cover component 16. The leadframe 24 comprises inner lead ends 26 and outer lead ends 28. Inner lead ends 26 are adapted for electrical interconnection to the electronic device 12 as by wire bonds 30. The outer lead ends 28 are adapted for connection to an external device such as a printed circuit board.
The electronic device 12 is bonded to the base component 14 by a die attach 31. The die attach 31 may be electrically conductive or electrically insulating dependent upon the needs of the electronic device 12. As the coefficient of thermal expansion of the aluminum or aluminum alloy base component 14 is from about 230 x 10-7 /°C to about 274 x 10-7 /°C and the coefficient of thermal expansion of the electronic device is about 49 x 10-7 /°C, it is preferred to use a compliant die attach system. A compliant die attach system will absorb the stresses created by the coefficient of thermal expansion mismatch generated during die attach, package sealing and device operation. Silver filled polyimide die attach systems are particularly well suited for the package as are die attach systems incorporating a relatively low coefficient of thermal expansion buffer.
Sealing the leadframe 24 to the base component 14 and the cover component 16 are bonding layers 32. The bonding layers are a polymer adhesive.
The adhesive layers 32 may be comprised of any suitable thermosetting or thermoplastic resin. A resin adhesive such as an epoxy, for example, Ablestik 550K manufactured by Ablestik Laboratories of Gardena, California is one exemplary bonding material. This sealant is bonded at a temperature in the range of from about 145°C to about 155°C. Bonding times range from about 1 hour to about 2 hours.
It has been discovered that an anodization layer 34 on at least a portion of the base 14 and cover 16 components yields superior results. Both a thin anodization layer, defined as having a thickness of less than about 2.5 microns (100 microinches) and a thick anodization layer produce aluminum base electronic packages which exhibited no corrosion when subjected to the 24 hour salt corrosion test. The preferred thickness of the anodization layer is from about 0.25 microns (10 microinches) to about 50 microns (2000 microinches). The most preferred thickness is in the range of from about 1.25 microns (50 microinches) to about 5 microns (200 microinches).
The anodization layer may be applied by any technique known in the art. For example, an aqueous solution containing about 20 volume percent sulfuric acid at a temperature of about 20°C deposits a satisfactory anodized layer on the surface of an anodically charged aluminum or aluminum alloy substrate. The anodization layer is applied either before or after the formation of depressions 18, 20 in the base 14 and cover 16 components. The surface 36 of the depression may either be anodized or bare metal.
A sealing process is preferably used to reduce porosity. A typical anodization sealing process is water or steam sealing. The process entails exposing the anodized surface to pressurized steam for from about 30 minutes to about 60 minutes. The anodized surface hydrates to form crystalline boehmite (Al2O3·H2O). The conversion to boehmite results in a volume increase effectively closing any pores in the anodized surface. Other satisfactory sealing solutions include nickel acetate, ferric oxalate, dichromates and molybdates.
A slight thermal conductivity advantage is achieved with bare metal, without an anodization layer. The bare metal is electrically conductive. For certain electronic applications, such as housing a bipolar device, a conductive substrate is not desirable. These devices are preferable electrically isolated from the package and the use of a thermally and electrically conductive die attach such as silver filled epoxy on bare metal results in shorting. The present invention overcomes this problem by disposing a dielectric layer of anodization between the conductive die attach and the base metal electrically isolating the device from the package.
Even though the thermal conductivity of aluminum alloy 3003 is only about 50% that of copper alloy 197, the ΘJC values are about equal and the ΘJA value only in the range of about from 10% to about 15% higher. It is believed the reason for this is that the largest contributor to ΘJC and ΘJA values is the die attach material. The thermal resistance of the aluminum substrates is a minor contributor to the Θ values.
As discussed hereinabove, an advantage of metal packages over ceramic or plastic packages is thermal performance. Thermal performance is typically recorded as ΘJC and ΘJA. ΘJC is a measure of the temperature difference between the junction and the case. The junction temperature is measured at the die attach 31 and the case temperature is measured at a point along the package base 14. Similarly, ΘJA is a measure of the temperature difference between the junction and the ambient environment. Table 1 gives measured values for a 48 pin dual in line epoxy sealed package having either copper alloy 197 or aluminum alloy 3003 componenets. TABLE 1
Component
Composition °C/W still air °C/W forced air °C/W
Cu alloy 197 2 - 3 18.5 - 22 5 - 6
Al alloy 3003 2 - 3 17 - 19 8
Copper has a density about three times that of aluminum. A package weighing about 60% less than a conventional copper metal package may be obtained with only a minimal loss in thermal performance in accordance with this invention.
The invention is not limited to dual in line packages. QUAD packages having lead ends approaching the electronic device from all four sides of the device periphery may also be assembled using aluminum based components having anodized surfaces.
Window frame packages as shown in FIG. 2 are also made according to the invention. A window frame package 50 is similar to the above described package with the exception that a window frame 52 is disposed between the leadframe 24 and the cover component 16'. A window frame package is desirable in the situation where the electronic device 12 is to be die attached and wire bonded at a different time than the package is assembled as where a vendor manufacturers the package for shipment to a device maker.
The window frame 52 is comprised of any somewhat rigid material which is bondable to sealant 32. The window frame preferably has a coefficient of thermal expansion close to that of the cover component 16' or the leadframe 24. Preferred window frame materials are copper, aluminum and the alloys of the metals. To minimize package weight, aluminum or aluminum alloys are most preferred. For improved strength, manganese containing aluminum alloys such as aluminum alloy 3003 are preferred.
In the window frame package, a leadframe 24 is disposed between the window frame 52 and a base component 14. For improved corrosion resistance, an anodization layer 34 is applied to the base component 14 and the window frame component 52. The leadframe 24 is bonded to a first side of the window frame 52 and to the base component 14 with a suitable bonding agent 32 such as a glass or a polymer adhesive. Subsequent to bonding the leadframe 24, the electronic device 12 is bonded as by a die attach 31 and electrically connected to the inner leads 26 of the leadframe 24 by wire bonds 30. A cover component 16 is then bonded to the second side of the window frame 52 with a sealant 56 to encase the electronic device 12.
The sealant 56 is selected to be any material known in the art which will bond to the window frame 52 and the cover component 16 at a relatively low temperature. The desired bonding temperature is low enough so as not to degrade the sealant 32 or the electronic device 12. The sealant preferably bonds at a temperature of less than about 150°C. The sealant may be any compatible thermosetting or thermoplastic adhesive. A preferred sealant is the epoxy Ablestik 550.
It is preferable to coat the cover component 16 with an anodization layer 34 for improved corrosion resistance. The anodization layer may be applied over all or a portion of the base component 14, the cover component 16 and the window frame 52. It may not be desirable or necessary to entirely coat every surface of the base and cover component.
The region of the surfaces coated varies. At a minimum, all surfaces exposed to the atmosphere should be coated to prevent corrosion. The seal areas, those surfaces in contact with the sealants 32 and 54 may be coated for improved bond strength. The remaining surface areas are optionally coated dependent upon desired electrical, thermal and moisture getting properties.
Interior surfaces 36 and 54 may preferably not be anodized. Better thermal conductivity is achieved by bonding the electronic device 12 directly to the aluminum or aluminum alloy surface 36. If the surface to be bonded 36 is not anodized, the electronic device may be electrically connected to the base component as for grounding. If the surface 36 is anodized, the electronic device may be electrically isolated from the package.
A moisture trapping surface, such as a getter alloy may be formed on the interior surface 54 of the cover component to trap residual moisture and sealing reaction by-products.
Surfaces free of anodization may be prepared by a variety of methods. The portion of the surface desired to be anodization free may be coated with a chemical resist or a plater's tape prior to immersion in the anodizing solution. The entire surface may be anodized and the desired region made anode free by a mechanical operation. For example, a milling step is useful to form the base depression 18.
By varying the anodization parameters, a roughened anodization layer may be formed. A rougher surface finish increases mechanical locking of the bonding component, particularly a polymer sealant, and improves the bond strength. It is apparent the invention provides an electronic package having improved characteristics. The package is more light weight than copper based packages and has better thermal conductivity than plastic based packages. Anodizing at least a portion of the aluminum surfaces provides for increased resistance to corrosion and further increases bond strength.
A pressure pot test was used to evaluate the strength of the adhesive bond to anodized aluminum alloy based packages. The packages were epoxy sealed and then subjected to 100% relative humidity at 121°C and 984 gm/cm2 (14 psi). Leak testing revealed no adhesive failures after 200 hours.
By adjusting the chemical composition and operating parameters of the anodization and sealing solutions, different color surfaces may be obtained. This is beneficial in consumer electronic applications where a black or gold finish is often desirable.
It is apparent that there has been provided in accordance with this invention a number of embodiments which are especially suited for electronic packages comprised of aluminum or aluminum alloy components which have improved resistance to corrosion. While the invention has been described in connection with the embodiments thereof, it is evident that many alternatives, modifications and variations will be apparent to those skilled in the art in light of the foregoing description. Accordingly, it is intended to embrace all such alternatives, modifications and variations as fall within the spirit and broad scope of the appended claims.

Claims (37)

  1. A package (10,50) for encasing an electronic device (12), comprising
    a aluminum or aluminum alloy base component (14);
    a aluminum or aluminum alloy cover component (16,16');
    said base component (14) and said cover component (16,16') defining a cavity (22);
    a leadframe (24) disposed between and bonded to said base component (14) and to said cover component (16,16') with a polymer adhesive; and
    an anodization layer (34) covering at least that portion of said base (14) and cover (16,16') components exposed to the atmosphere.
  2. The package (10,50) of claim 1 characterized in that the thickness of the anodization layer (34) is in the range of from about 0.25 microns (10 microinches) to about 50 microns (1000 microinches).
  3. The package (10,50) of claim 1 or 2 characterized in that the seal area of said base (14) and cover (16,16') components is covered by an anodization layer (34).
  4. The package (10,50) of any one of claims 1 to 3 characterized in that the surface of the anodization layer (34) has been roughened to improve bond strength.
  5. The package (10,50) of any one of claims 1 to 4 characterized in that substantially the entire surface of the base component (14) and of the cover component (16,16') are covered with an anodization layer (34).
  6. The package (10,50) of any one of claims 1 to 5 characterized in that the surface (36) of the base component (14) to be bonded to said electronic device (12) is free of an anodization layer (34).
  7. The package (10,50) of any one of claims 1 to 6 characterized in that a portion of the surface of said cover component (16,16') enclosed within said cavity (22) is free of an anodization layer (34).
  8. The package (10,50) of any one of claims 1 to 7 characterized in that said base component (14) and said cover component (16,16') are comprised of an aluminum based alloy containing up to about 1.5 percent by weight of manganese.
  9. The package (10,50) of any one of claims 1 to 8 characterized in that said base component (14) and said cover component (16,16') are comprised of an aluminum based alloy containing about 0.12 percent by weight copper and about 1.2 percent by weight manganese.
  10. The package (10,50) of any one of claims 1 to 9 characterized in that said electronic device (12) is bonded to said base component (14) and electrically connected to said leadframe (24); and said leadframe (24) is bonded to said base component (14) and to said cover component (16,16').
  11. The package (10,50) of any one of claims 1 to 10 characterized by an aluminum or an aluminum alloy window frame component (52) being disposed between said leadframe (24) and said cover component (16,16') and adhesively bonded to both.
  12. The package (10,50) of claim 11 characterized in that said window frame component (52) contains an anodization layer (34) of at least that portion of the surface exposed to the atmosphere.
  13. The package (10,50) of claim 12 characterized in that the thickness of the anodization layer (34) of the window frame component (52) is in the range of from about 0.25 microns (10 microinches) to about 50 microns (2000 microinches).
  14. The package (10,50) of claim 12 or 13 characterized in that substantially the entire surface of said window frame component (52) is covered by an anodization layer (34).
  15. A process for assembling a package (10,50) for encasing an electronic device (12) comprising the steps of:
    providing a base component (14) and a cover component (16,16'), said base (14) and cover (16,16') components comprised of aluminum or an aluminum based alloy;
    anodizing at least that portion of the surfaces of said base (14) and cover (16,16') components exposed to the atmosphere;
    disposing a leadframe (24) between said base component (14) and said cover component (16,16') and
    bonding said leadframe (24) to said base component (14) and to said cover component (16,16') with a polymer adhesive subsequent to connecting said electronic device (12) to said base component 14 and to said leadframe (24).
  16. The process of claim 15 characterized by the step of sealing said anodization layer (34).
  17. The process of claim 15 or 16 characterized by masking a portion of either said base component (14) or said cover component (16,16') or both prior to anodization.
  18. The process of any one of claims 15 to 17 characterized by anodizing the entire surfaces of the base (14) and cover components (16,16') and subsequently removing a portion of said anodization layer (34).
  19. The process of any one of claims 16 to 18 characterized by anodizing the seal area of the base component (14) and the cover component (16,16').
  20. The process of any one of claims 15 to 19 characterized by the step of increasing the surface roughness of the anodization layer (34).
  21. The process of any one of claims 15 to 20 characterized by disposing a window frame component (52) between said leadframe (24) and said cover component (16,16') and bonding said window frame (52) to said leadframe (24) and to said cover component (16,16').
  22. The process of claim 21 characterized by bonding said cover component (16,16') to said window frame component (52) subsequent to bonding said window frame (52) to said leadframe (24).
  23. The process of claim 21 or 22 characterized by selecting said window frame (52) to be aluminum or an aluminum alloy.
  24. The process of any one of claims 21 to 23 characterized by selecting said window frame (52), said base component (14) and said cover cmponent (16,16') to be an aluminum based alloy containing up to about 1.5 percent by weight manganese.
  25. The process of any one of claims 21 to 24 characterized by selecting said window frame (52), said base component (14) and said cover component (16,16') to be an aluminum based alloy containing about 0.12 percent by weight copper and about 1.2 percent by weight manganese.
  26. A kit for the assembly of an adhesively sealed package (10,50) designed to encase an electronic device (12), comprising:
    a metallic base component (14) selected from the group consisting of aluminum and aluminum based alloys, said base component having a first surface and an opposing second surface, said first surface having at least selected portions thereof coated with an anodization layer (34) for receiving a polymeric adhesive (32); and
    a metallic cover component (16,16') selected from the group consisting of aluminum and aluminum based alloys, said cover component having a bonding surface for bonding to the first surface of said base component and an opposing surface, said bonding surface having an outer ring portion and an inner depressed or flat portion (20,54) bordered by said ring portion, said ring portion coated with an anodization layer (34) for receiving a polymeric adhesive (34), wherein the surfaces of the base and cover component (14, 16, 16') exposed to the atmosphere are covered with an anodization layer to prevent corrosion.
  27. The kit of claim 26, characterized in that said anodization layers (34) of said first surface of said base component (14) and of said outer ring portion have a thickness of from about 0.25 microns to about 50 microns (10 to 2000 microinches).
  28. The kit of claim 26 or 27 characterized in that all surfaces and edges of said metallic base component 14 and of said metallic cover component (16,16') are coated with said anodization layer (34).
  29. The kit of any one of claims 26 to 28 characterized in that said metallic base (14) and cover (16,16') components are formed from aluminum alloy 3003.
  30. The kit of any one of claims 26 to 29 further including an aluminum or aluminum alloy window frame (52).
  31. The kit of claim 30 characterized in that said window frame (52) has an anodization layer (34) coating all surfaces and edges, said surfaces adapted to receive a polymeric adhesive (32,56).
  32. The kit of any one of claims 26 to 31 characterized in that a sufficient quantity of a polymeric adhesive (31,32) is provided as an element of the kit in dry sheet, paste, powder, gel or liquid form.
  33. The kit of claims 32 characterized in that said polymeric adhesive (31,32) is provided in the form of a dry sheet.
  34. The kit of any one of claims 26 to 33 characterized in that said polymeric adhesive (31,32) is provided in the form of first (32), second (31) and third (32) sheets of adhesive, said first sheet of adhesive (32) comprising a ring for bonding said base component (14) to a leadframe (24), said second sheet of adhesive (31) comprising a generally rectangular portion for bonding said metallic base component (14) to a centrally positioned die attach pad of said leadframe (24) and said third sheet of adhesive (32) comprising a ring for bonding said metallic cover component (16,16') to said leadframe (24).
  35. The kit of claim 34 characterized in that said first (32) and second (31) sheets of adhesive are tacked to said metallic base component (14) and said third sheet of adhesive (32) ist tacked to said metallic cover component (16,16').
  36. The kit of any one of claims 26 to 33 characterized in that said polymeric adhesive is provided in the form of first (32), second (31), third (56) and fourth (32) sheets of adhesive, said first sheet of adhesive (31) comprising a ring for bonding said metallic base component (12) to a leadframe (24), said second sheet of adhesive (31) comprising a generally rectangular portion for bonding said metallic base component (12) to a centrally positioned die attach pad of said leadframe (24), said third sheet of adhesive (56) comprising a ring for bonding said metallic cover component (16,16') to said window frame component (52) and said fourth sheet of adhesive (32) comprising a ring for bonding said window frame component (52) to said leadframe (24).
  37. The kit of claim 36 characterized in that said first (32) and second sheets (31) of adhesive are tacked to said metallic base component (14), said third sheet of adhesive (56) is tacked to said metallic cover component (16,16') and said fourth sheet of adhesive (32) is tacked to said window frame component (52).
HK98107155A 1988-10-05 1989-09-14 Aluminum alloy semiconductor packages HK1008114A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US07/253,639 US4939316A (en) 1988-10-05 1988-10-05 Aluminum alloy semiconductor packages
US253639 1988-10-05
PCT/US1989/004135 WO1990004262A1 (en) 1988-10-05 1989-09-14 Aluminum alloy semiconductor packages

Publications (2)

Publication Number Publication Date
HK1008114B true HK1008114B (en) 1999-04-30
HK1008114A1 HK1008114A1 (en) 1999-04-30

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US (1) US4939316A (en)
EP (2) EP0438444B1 (en)
JP (2) JP3016227B2 (en)
KR (1) KR0154111B1 (en)
AU (1) AU629864B2 (en)
CA (1) CA1296815C (en)
DE (2) DE68929103T2 (en)
HK (1) HK1008114A1 (en)
MX (1) MX163728B (en)
PH (1) PH25542A (en)
WO (1) WO1990004262A1 (en)

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2642257B1 (en) * 1989-01-20 1996-05-24 Dassault Electronique GLASS-ALUMINUM SEALING PROCESS, PARTICULARLY FOR ELECTRICAL THROUGHING OF HYBRID CIRCUIT BOX, CORRESPONDING COMPOSITE OBJECT AND GLASS COMPOSITION
US5367125A (en) * 1989-01-20 1994-11-22 Dassault Electronique Aluminum based article having an insert with vitreous material hermetically sealed thereto
US5250363A (en) * 1989-10-13 1993-10-05 Olin Corporation Chromium-zinc anti-tarnish coating for copper foil having a dark color
US5073521A (en) * 1989-11-15 1991-12-17 Olin Corporation Method for housing a tape-bonded electronic device and the package employed
US5098864A (en) * 1989-11-29 1992-03-24 Olin Corporation Process for manufacturing a metal pin grid array package
US5043534A (en) * 1990-07-02 1991-08-27 Olin Corporation Metal electronic package having improved resistance to electromagnetic interference
US5066368A (en) * 1990-08-17 1991-11-19 Olin Corporation Process for producing black integrally colored anodized aluminum components
US5122858A (en) * 1990-09-10 1992-06-16 Olin Corporation Lead frame having polymer coated surface portions
US5148265A (en) 1990-09-24 1992-09-15 Ist Associates, Inc. Semiconductor chip assemblies with fan-in leads
US7198969B1 (en) 1990-09-24 2007-04-03 Tessera, Inc. Semiconductor chip assemblies, methods of making same and components for same
US5261157A (en) * 1991-01-22 1993-11-16 Olin Corporation Assembly of electronic packages by vacuum lamination
US5132773A (en) * 1991-02-06 1992-07-21 Olin Corporation Carrier ring having first and second ring means with bonded surfaces
JPH05198575A (en) * 1991-05-01 1993-08-06 Kobe Steel Ltd Corrosion-resistant a1 or a1 alloy material
US5144709A (en) * 1991-05-03 1992-09-08 Olin Corporation Formation of shapes in a metal workpiece
US5272800A (en) * 1991-07-01 1993-12-28 Olin Corporation Method and apparatus for forming and positioning a preform on a workpiece
US5343073A (en) * 1992-01-17 1994-08-30 Olin Corporation Lead frames having a chromium and zinc alloy coating
US5300158A (en) * 1992-05-26 1994-04-05 Olin Corporation Protective coating having adhesion improving characteristics
US5239131A (en) * 1992-07-13 1993-08-24 Olin Corporation Electronic package having controlled epoxy flow
US5367196A (en) * 1992-09-17 1994-11-22 Olin Corporation Molded plastic semiconductor package including an aluminum alloy heat spreader
TW238419B (en) 1992-08-21 1995-01-11 Olin Corp
US5608267A (en) * 1992-09-17 1997-03-04 Olin Corporation Molded plastic semiconductor package including heat spreader
US5317107A (en) * 1992-09-24 1994-05-31 Motorola, Inc. Shielded stripline configuration semiconductor device and method for making the same
US5324888A (en) * 1992-10-13 1994-06-28 Olin Corporation Metal electronic package with reduced seal width
US5477008A (en) * 1993-03-19 1995-12-19 Olin Corporation Polymer plug for electronic packages
US6262477B1 (en) 1993-03-19 2001-07-17 Advanced Interconnect Technologies Ball grid array electronic package
US5650592A (en) * 1993-04-05 1997-07-22 Olin Corporation Graphite composites for electronic packaging
JPH09502837A (en) * 1993-09-13 1997-03-18 オリン コーポレイション Flip chip in a metal electronic package
US5540378A (en) * 1993-09-27 1996-07-30 Olin Corporation Method for the assembly of an electronic package
EP0723703A4 (en) * 1993-10-12 1998-04-01 Olin Corp METAL BOX CONNECTABLE TO THE END
US5360942A (en) * 1993-11-16 1994-11-01 Olin Corporation Multi-chip electronic package module utilizing an adhesive sheet
US5455386A (en) * 1994-01-14 1995-10-03 Olin Corporation Chamfered electronic package component
US5644102A (en) * 1994-03-01 1997-07-01 Lsi Logic Corporation Integrated circuit packages with distinctive coloration
US5578869A (en) * 1994-03-29 1996-11-26 Olin Corporation Components for housing an integrated circuit device
WO1995028740A1 (en) * 1994-04-14 1995-10-26 Olin Corporation Electronic package having improved wire bonding capability
WO1995031826A1 (en) * 1994-05-17 1995-11-23 Olin Corporation Electronic packages with improved electrical performance
US5436407A (en) * 1994-06-13 1995-07-25 Integrated Packaging Assembly Corporation Metal semiconductor package with an external plastic seal
US5455387A (en) * 1994-07-18 1995-10-03 Olin Corporation Semiconductor package with chip redistribution interposer
US5629835A (en) * 1994-07-19 1997-05-13 Olin Corporation Metal ball grid array package with improved thermal conductivity
US5573845A (en) * 1994-12-09 1996-11-12 Olin Corporation Superficial coating layer having acicular structures for electrical conductors
US5545850A (en) * 1995-01-13 1996-08-13 Olin Corporation Guard ring for integrated circuit package
KR0122423Y1 (en) * 1995-03-23 1998-10-01 김광호 Fully automatic washing machine
TW309654B (en) * 1995-03-29 1997-07-01 Olin Corp
US5534356A (en) * 1995-04-26 1996-07-09 Olin Corporation Anodized aluminum substrate having increased breakdown voltage
US5650663A (en) * 1995-07-03 1997-07-22 Olin Corporation Electronic package with improved thermal properties
AU6450096A (en) * 1995-07-14 1997-02-18 Olin Corporation Metal ball grid electronic package
KR19990071466A (en) * 1995-11-20 1999-09-27 휴버트 마이어 Ground ring for metal electronic package
US5764484A (en) * 1996-11-15 1998-06-09 Olin Corporation Ground ring for a metal electronic package
JP2000500618A (en) * 1995-11-22 2000-01-18 オリン コーポレイション Semiconductor package having ground or power ring
US5817544A (en) * 1996-01-16 1998-10-06 Olin Corporation Enhanced wire-bondable leadframe
US5805427A (en) * 1996-02-14 1998-09-08 Olin Corporation Ball grid array electronic package standoff design
US5801074A (en) * 1996-02-20 1998-09-01 Kim; Jong Tae Method of making an air tight cavity in an assembly package
US5892278A (en) * 1996-05-24 1999-04-06 Dai Nippon Printingco., Ltd. Aluminum and aluminum alloy radiator for semiconductor device and process for producing the same
US5943558A (en) * 1996-09-23 1999-08-24 Communications Technology, Inc. Method of making an assembly package having an air tight cavity and a product made by the method
US5952083A (en) * 1997-10-21 1999-09-14 Advanced Technology Interconnect, Inc. Aluminum alloys for electronic components
KR100265563B1 (en) * 1998-06-29 2000-09-15 김영환 Ball grid array package and fabricating method thereof
DE10039646A1 (en) * 1999-08-18 2001-03-08 Murata Manufacturing Co Metal cover placed over and enclosing e.g. piezoelectric resonator on circuit substrate, includes insulating layer on and around edges bordering its open end
KR100723454B1 (en) * 2004-08-21 2007-05-30 페어차일드코리아반도체 주식회사 Power module package with high heat dissipation capacity and its manufacturing method
JP2003007880A (en) * 2001-06-20 2003-01-10 Sony Corp Hollow package and manufacturing method thereof
US20030112710A1 (en) * 2001-12-18 2003-06-19 Eidson John C. Reducing thermal drift in electronic components
JP2007019107A (en) * 2005-07-05 2007-01-25 Shinko Electric Ind Co Ltd Semiconductor device and manufacturing method of semiconductor device
KR100656300B1 (en) 2005-12-29 2006-12-11 (주)웨이브닉스이에스피 3D aluminum package module, manufacturing method thereof and passive element manufacturing method applied to 3D aluminum package module
EP2227926A1 (en) 2007-12-04 2010-09-15 E. I. du Pont de Nemours and Company Bendable circuit structure for led mounting and interconnection
DE102008004642A1 (en) * 2008-01-16 2009-07-23 Robert Bosch Gmbh Condensation trap for humidity-sensitive devices
CN101578018B (en) * 2008-05-09 2012-07-25 富准精密工业(深圳)有限公司 Combination piece of metal and plastic and manufacture method thereof
CN102473813B (en) * 2009-07-30 2015-02-04 日亚化学工业株式会社 Light emitting device and method for manufacturing same
KR101064084B1 (en) 2010-03-25 2011-09-08 엘지이노텍 주식회사 Light emitting device package and manufacturing method thereof
KR101095202B1 (en) * 2010-06-15 2011-12-16 삼성전기주식회사 Hybrid heat sink and its manufacturing method
US10636735B2 (en) * 2011-10-14 2020-04-28 Cyntec Co., Ltd. Package structure and the method to fabricate thereof
FR2984679B1 (en) * 2011-12-15 2015-03-06 Valeo Sys Controle Moteur Sas THERMALLY CONDUCTIVE AND ELECTRICALLY INSULATING CONNECTION BETWEEN AT LEAST ONE ELECTRONIC COMPONENT AND A RADIATOR IN ALL OR METALLIC PORTION
US9578769B2 (en) 2012-05-29 2017-02-21 Apple Inc. Components of an electronic device and methods for their assembly
JP6436343B2 (en) * 2014-11-18 2018-12-12 富士電機株式会社 Sensor unit for infrared gas analyzer and detector for infrared gas analyzer
CN119381347B (en) * 2024-09-18 2025-10-14 北京遥测技术研究所 A lightweight and highly thermally conductive graphene-aluminum gradient packaging tube shell and its design method

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3871018A (en) * 1971-03-26 1975-03-11 Ferranti Ltd Construction of packages for semiconductor devices
US3943623A (en) * 1974-08-23 1976-03-16 Nitto Electric Industrial Co., Ltd. Hollow cavity package electronic unit
US4105861A (en) * 1975-09-29 1978-08-08 Semi-Alloys, Inc. Hermetically sealed container for semiconductor and other electronic devices
US4410927A (en) * 1982-01-21 1983-10-18 Olin Corporation Casing for an electrical component having improved strength and heat transfer characteristics
US4461924A (en) * 1982-01-21 1984-07-24 Olin Corporation Semiconductor casing
US4480262A (en) * 1982-07-15 1984-10-30 Olin Corporation Semiconductor casing
US4594770A (en) * 1982-07-15 1986-06-17 Olin Corporation Method of making semiconductor casing
CA1201211A (en) * 1982-08-05 1986-02-25 Olin Corporation Hermetically sealed semiconductor casing
US4656499A (en) * 1982-08-05 1987-04-07 Olin Corporation Hermetically sealed semiconductor casing
US4521469A (en) * 1982-11-22 1985-06-04 Olin Corporation Casing for electronic components
US4582556A (en) * 1982-11-22 1986-04-15 Olin Corporation Adhesion primers for encapsulating epoxies
US4525422A (en) * 1982-11-22 1985-06-25 Olin Corporation Adhesion primers for encapsulating epoxies
US4524238A (en) * 1982-12-29 1985-06-18 Olin Corporation Semiconductor packages
US4498121A (en) * 1983-01-13 1985-02-05 Olin Corporation Copper alloys for suppressing growth of Cu-Al intermetallic compounds
US4572924A (en) * 1983-05-18 1986-02-25 Spectrum Ceramics, Inc. Electronic enclosures having metal parts
JPH0612796B2 (en) * 1984-06-04 1994-02-16 株式会社日立製作所 Semiconductor device
US4542259A (en) * 1984-09-19 1985-09-17 Olin Corporation High density packages
JPS61281541A (en) * 1985-06-06 1986-12-11 Sumitomo Electric Ind Ltd Package for semiconductor device
JPH02501967A (en) * 1987-01-12 1990-06-28 オリン コーポレーション Method for manufacturing high-strength lead frames that can be molded into semiconductor packages
US4769345A (en) * 1987-03-12 1988-09-06 Olin Corporation Process for producing a hermetically sealed package for an electrical component containing a low amount of oxygen and water vapor
JPH0724290B2 (en) * 1987-03-23 1995-03-15 住友金属工業株式会社 Method of manufacturing integrated circuit container

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