HK1051441B - Semiconductor joining substrate-use tape with adhesive and copper-clad laminate sheet using it - Google Patents

Description

Adhesive tape for semiconductor device and copper-clad laminate using the same

Technical Field

The present invention relates to an adhesive-attached tape for semiconductor devices using a film-like adhesive, such as a tape for patterning for use in mounting a semiconductor integrated circuit and suitable for use in manufacturing a Tape Automated Bonding (TAB) type semiconductor device, a substrate for semiconductor connection such as an interposer ポ - ザ for a Ball Grid Array (BGA) package, a die attach material, a lead frame attach tape, a LOC (communication line) tape, and an interlayer sheet for a multilayer substrate, and a copper-film laminate, a substrate for semiconductor connection, and a semiconductor device using the same.

Background

The following is a mounting technology of an existing semiconductor Integrated Circuit (IC).

In IC mounting, a metal lead frame is used most frequently, but in recent years, a method of forming a conductor pattern for IC connection on an organic insulating film such as glass epoxy or polyimide with a connection substrate as an intermediate has been increasing. A Tape Carrier Package (TCP) using a Tape Automated Bonding (TAB) method is typically used.

A tape with an adhesive for TAB (hereinafter referred to as a TAB tape) is generally used as a connection substrate (pattern tape) of TCP. A general tape for TAB has a 3-layer structure in which an uncured adhesive layer and a releasable polyester film as a protective film layer are laminated on a flexible organic insulating film.

The TAB tape is processed into a TAB tape (pattern tape) of a substrate for connection through the processing steps of (1) punching of a sprocket and a device hole, (2) hot pressing with a copper foil and thermosetting of an adhesive, (3) patterning (coating protection, etching, removal protection), (4) soldering or gold plating treatment, and the like. Fig. 1 shows the shape of the pattern belt. The organic insulating film 1 has an adhesive 2, a conductor pattern 5, a sprocket hole 3 for transporting the film, and a device hole 4 for mounting a device. Fig. 2 is a cross-sectional view showing one pattern of a TCP-type semiconductor device. The inner lead portion 6 (inner wire bonding) of the pattern tape is thermally pressed on the gold bump 10 of the semiconductor integrated circuit 8, and the semiconductor integrated circuit is mounted. Subsequently, a semiconductor device is manufactured through an encapsulating process using the encapsulating resin 9. Finally, the TCP semiconductor device is connected to the external lead 7 via a circuit board or the like on which other components are mounted, and mounted in an electronic apparatus.

On the other hand, with the recent miniaturization and weight reduction of electronic devices, semiconductor packages are also being packed at high density, and BGA (ball grid array) and CSP (chip scale package) in which connection terminals are arranged on the back surface of a package have been used. Like TCP, BGA and CSP must have a connection substrate called inter ポ - ザ -. However, in contrast to the conventional carrier bonding method in which TCP is mostly TAB, IC connection methods are either TAB or wire bonding methods for BGA or CSP, and these methods are selected according to the type, application, and design policy of various components. Fig. 3 and 4 show cross-sectional views of one pattern of the semiconductor device (BGA, CSP). In the drawings, reference numerals 12 and 20 denote organic insulating films, reference numerals 13 and 21 denote adhesives, reference numerals 14 and 22 denote conductor patterns, reference numerals 15 and 23 denote semiconductor integrated circuits, reference numerals 16 and 24 denote encapsulating resins, reference numerals 17 and 25 denote gold bumps, reference numerals 18 and 26 denote solder balls, reference numeral 19 denotes a reinforcing plate, and reference numeral 27 denotes a solder resist.

The inter ポ - ザ mentioned here is a tape having the same function as the aforementioned TCP pattern tape, and an adhesive tape for TAB can be used. This is of course advantageous for the connection with the inner leads, but it is particularly suitable for the process of laminating the copper foil after mechanically drilling the soldering holes and the mechanical holes for the IC. On the other hand, in order to connect by wire bonding, it is preferable to use a copper film laminated plate in which copper foil is already laminated and an adhesive is cured by heating in a process of forming a solder hole with copper foil and a device hole for IC without using an inner lead.

In the most advanced area array type package of CSP, BGA, etc., higher packaging density is required, and the pitch of solder holes as external terminals has been narrowed. For example, the pitch of the existing welding holes is adjusted to be 1.00mm from 1.27mm, and the diameter of the ビア hole is adjusted to be 0.5mm from 1 mm. Among them, an insulating film such as polyimide as a base film is required to be increased to a thickness of 50 μm because it causes many obstacles to a conventional punching process with a thickness of 75 μm.

However, when the thickness is less than 75 μm, the rigidity is lowered, and there is a problem that warpage is likely to occur when the copper foil is bonded. Further, the copper foil tends to be thinner with the progress of microfabrication, and the mainstream thereof has been to reduce the thickness from the conventional 35 μm to the conventional 18 μm or 15 μm, which is also one of the main causes of the problem.

In this regard, a method of introducing a silicone structure into an adhesive of an existing adhesive-equipped tape to impart flexibility while avoiding warpage has been studied (USP 5180627).

However, this method also includes a test for reducing warpage by improving the adhesive, and thus, sufficient results have not been obtained so far, and it is difficult to put it into practical use. This is effective to some extent when the residual ratio of the copper foil after formation of the circuit pattern is small, but when the residual ratio of the copper foil is large, the effect of reducing the warpage, that is, the residual ratio of the copper foil is a cause of changing the warpage, is not observed in the state after lamination and curing of the copper foil.

In the tape manufacturing, it is preferable that no warpage is generated in the above steps, and it is desirable to reduce warpage both in a state with a copper foil and in a state after a circuit has been formed. In contrast to this requirement, it has not been possible with the prior art to satisfy the requirement of reducing warpage both in the state with the copper foil and in the state after the circuit has been formed.

The object of the present invention is to solve these problems by improving the physical properties of an insulating film such as polyimide as a base film, and to provide a tape with an adhesive for a semiconductor, which satisfies the requirements of reducing warpage while in a state with a copper foil and in a state after a circuit has been formed, and which has excellent dimensional stability, and a copper-clad laminate, a substrate for semiconductor connection, and semiconductor manufacturing using the same.

On the other hand, when connecting an IC by wire bonding, it is required that the adhesive maintains high modulus of elasticity at a bonding temperature of 110 to 200 ℃. This causes problems such as an increase in the elastic modulus of the adhesive and a crack of the adhesive in the punching step. It is still another object of the present invention to provide an adhesive-attached tape for semiconductor, which has both an excellent adhesive modulus at high temperatures and excellent hole-punching properties for insulation.

Disclosure of Invention

The present invention provides a tape with an adhesive for a semiconductor device, the tape comprising a laminate of an insulating film layer and 1 or more adhesive layers in a semi-cured state, wherein the insulating film layer has a linear expansion coefficient of 17 ppm/DEG C to 30 ppm/DEG C and a tensile elastic modulus of 6GPa to 12GPa in a film width direction at 50 ℃ to 200 ℃, and the adhesive layer has an elastic modulus of 1MPa to 5GPa in a width direction at 150 ℃ and a linear expansion coefficient of 10 ppm/DEG C to 500 ppm/DEG C in a range from 25 ℃ to 150 ℃.

The present invention provides a copper-clad laminate using the tape with an adhesive for a semiconductor device according to the present invention.

The present invention provides a substrate for semiconductor connection using the tape with an adhesive for a semiconductor device according to the present invention.

The present invention provides a semiconductor device using the copper-clad laminate according to the present invention.

The present invention also provides a semiconductor device using the semiconductor connection substrate.

Drawings

Fig. 1 is a perspective view showing one type of a substrate for semiconductor connection (pattern processing tape) before a semiconductor integrated circuit is mounted, which is obtained by processing an adhesive-attached tape for a semiconductor device of the present invention.

Fig. 2 is a cross-sectional view showing one use of a semiconductor device (TCP) using an adhesive-attached tape for a semiconductor device of the present invention.

Fig. 3 is a cross-sectional view showing one use of a semiconductor device (BGA) using an adhesive-attached tape for a semiconductor device of the present invention.

Fig. 4 is a cross-sectional view showing one use of a semiconductor device (CSP) using the adhesive-attached tape for a semiconductor device of the present invention.

Description of the symbols

1. 12, 20 insulating film

2. 13, 21 adhesive

3 sprocket hole

4 device aperture

5. 14, 22 conductor for connecting semiconductor integrated circuit

6 inner lead part

7 outer lead part

8. 15, 23 semiconductor integrated circuit

9. 16, 24 encapsulating resin

10. 17, 25 gold block

11 protective film

18. 26 solder ball

19 reinforcing plate

27 protective layer of solder (solder resist)

Detailed Description

The insulating film used in the present invention is, for example, a film made of a plastic such as polyimide, polyester, polyphenylene sulfide, polyether sulfone, polyether ether ketone, アラミド, polycarbonate, polyarylate, or a liquid crystal polymer, or a composite material containing glass cloth impregnated with an epoxy resin, and a laminated film made of a plurality of films selected from these is also preferable. Among these, a film containing a polyimide resin as a main component is preferable because it is excellent in various properties such as mechanical properties, electrical properties, heat resistance, and chemical properties, and has a good balance between costs. The insulating film may be subjected to surface treatment such as hydrolysis, corona discharge, low-temperature plasma, physical roughening, and coating treatment for easy adhesion on one or both surfaces thereof as required.

The thickness of the insulating film is preferably 10 to 65 μm, and more preferably 25 to 55 μm. When the thickness is smaller than 10 μm, the mechanical strength is low, and the workability is deteriorated in the steps after patterning, and therefore, the thickness is not preferable, and when the thickness is larger than 65 μm, it is difficult to miniaturize the solder hole and ビア hole, and the thickness is not preferable.

The linear expansion coefficient of the film in the width direction (TD) is preferably larger than that of the metal foil to be wrapped. When the metal foil is an electrolytic copper foil, the linear expansion coefficient at 50 to 200 ℃ is preferably 17 to 30 ppm/DEG C, and more preferably 19 to 25 ppm/DEG C. The case where the amount of the metal foil is less than 17 ppm/DEG C and the case where the amount of the metal foil is greater than 30 ppm/DEG C cause a large warpage in the state with the copper foil, and are not preferable.

The tensile modulus in the present invention means a value at 25 ℃ as defined in ASTM-D882. The tensile modulus is preferably 6 to 12GPa, more preferably 7 to 10 GPa. When the amount is less than 6GPa, the mechanical strength is low and the workability in the steps after patterning is low, and when the amount is more than 12GPa, the repulsive force is high and the flexibility is reduced.

The insulating film layer of the present invention preferably has a difference in linear expansion coefficient between the film in the longitudinal direction (MD ═ longitudinal direction) and the film in the Transverse Direction (TD) of 3 to 10 ppm/c, more preferably 5 to 7 ppm/c. The difference between the values is not selected for use in cases where the difference is less than 3 ppm/DEG C and in cases where the difference is greater than 10 ppm/DEG C, since the warp of the copper foil is large. In addition, the MD ratio TD is preferably smaller because the balance between the stretching by tension in the MD direction and the thermal stretching in the TD direction is good in the continuous lamination. The linear expansion coefficient herein is measured by the tensile load method using TMA, and is specifically shown in the following evaluation method (2) of examples.

The heat shrinkage rate in the film width direction (TD) of the insulating film layer at 200 ℃ is preferably 0.0 to 0.2%, more preferably 0.0 to 0.1%. The heat shrinkage rate is the same as the linear expansion rate, and affects the warpage with copper foil, and the warpage with copper foil is large in both the case of being lower than 0.0% and the case of being larger than 0.2%, and is not selected. The heat shrinkage as referred to herein is measured in accordance with the ASTM D1204 standard, and is specifically shown in the following evaluation method (3) of examples.

The moisture expansion coefficient in the film width direction (TD) of the insulating film layer is preferably 23 ppm/% RH or less, more preferably 5 to 20 ppm/% RH, and still more preferably 5 to 15 ppm/% RH. The coefficient of humidity expansion is the same as the coefficient of linear expansion, and affects the warpage with copper foil, and when it is larger than 23 ppm/% RH, the warpage with copper foil is large and is not selected. The conditions for the accurate measurement of the coefficient of humidity expansion as described herein are shown in the following evaluation method (4) of the examples.

The water absorption of the insulating film layer is preferably 1.7% or less, and more preferably 1.5% or less. When the water absorption rate exceeds 1.7%, the amount of moisture is increased by the heat of soldering at the time of mounting the semiconductor device, and the components of the TAB tape are peeled off from each other, resulting in poor solder heat resistance. The measurement conditions of the water absorption are shown in the evaluation method (5) of the following example.

The thermal conductivity of the insulating film layer is preferably 0.40W/mK or less, more preferably 0.30W/mK or less. When the thermal conductivity exceeds 0.40W/m.K, the welding heat is easily transmitted to the insulating film layer and the pressure-sensitive adhesive layer, and the moisture contained in the insulating film layer and the pressure-sensitive adhesive layer is easily vaporized and expanded. This makes it easy for the components of the TAB tape to peel off from each other, resulting in poor solder heat resistance. The measurement conditions of the thermal conductivity are shown in the evaluation method (6) of the following example.

The water vapor permeability of the insulating film layer is 0.04g/m²Preferably over 24 h. The water vapor permeability is in the ratio of 0.04g/m²After 24 hours, the moisture absorbed in the base material was not removed by heating during welding, and the base material was explosively vaporized and expanded, thereby causing separation of the components. The measurement conditions of the water vapor permeability are shown in the evaluation method (7) of the following example.

The adhesive layer is generally supplied in a semi-cured state, and is not particularly limited as long as it has a chemical structure capable of being cured and crosslinked by applying at least 1 or more kinds of energy selected from heat, pressure, an electric field, a magnetic field, ultraviolet rays, radiation, ultrasonic waves, and the like after the copper foil is laminated. In particular, it is preferable to contain at least 1 thermosetting resin selected from epoxy resins, phenol resins, polyimide resins, and maleimide resins. The addition amount of the thermosetting resin is preferably 2 to 20 wt%, more preferably 4 to 15 wt% in the adhesive layer. The thickness of the adhesive layer before curing is preferably within a range of 3 to 50 μm.

The epoxy resin is not particularly limited as long as it has 2 or more epoxy groups per molecule, and examples thereof include diglycidyl ethers of bisphenol F, bisphenol a, bisphenol S, dihydroxynaphthalene, dicyclopentadiene diphenol, dicyclopentadiene xylenol and the like, epoxidized novolak, epoxidized m-cresol novolak, epoxidized trishydroxyphenyl methane, epoxidized tetrahydroxy-phenylethane, epoxidized methyleneoxy-diamine, alicyclic epoxy and the like.

As the phenol resin, any of well-known phenol resins such as a varnish-type phenol resin and a cresol-type phenol resin can be used. Examples thereof include resins composed of alkyl-substituted phenols such as phenol, cresol, p-tert-butylphenol, nonylphenol and p-phenylphenol, cycloalkyl-modified phenols such as terpene and dicyclopentadiene, resins having a functional group containing a hetero atom such as a nitro group, a cyano group and an amino group, resins having a skeleton such as naphthalene and anthracene, and polyfunctional phenols such as bisphenol F, bisphenol A, bisphenol S, cresol, resorcinol and 1, 2, 3-benzenetrisphenol.

Examples of the polyimide resin include resins obtained by imidizing a polyamic acid obtained by the diamine condensation of a dianhydride of an aromatic tetracarboxylic acid such as pyromellitic acid, 4 '-bibenzoic acid, or 3, 3', 4 '-benzophenonetetracarboxylic acid with a diamino group such as 4, 4' -diaminodiphenyl ether, 4 '-diaminodiphenyl sulfide, p-phenylenediamine, dimethylbenzidine, or 3, 3' -diaminobenzophenone.

The maleimide resin is preferably one having a bifunctional or higher, and examples thereof include N, N '- (4, 4' -diphenylmethane) bismaleimide, N '-p-phenylene bismaleimide, N' -m-phenylene bismaleimide, N '-2, 4-tolylene bismaleimide, N' -2, 6-tolylene bismaleimide, N '-ethylenebismaleimide, and N, N' -hexylenebismaleimide.

The curing agent and curing accelerator for the heat-curable resin added in the adhesive layer of the present invention are not subject to any limitation. For example, known compounds such as aliphatic polyamines such as diethylenetriamine and triethylenetetramine, boron trifluoride amino complexes such as aromatic polyamines and boron trifluoride triethylamine complexes, imidazole derivatives such as 2-alkyl-4-methylimidazole and 2-phenyl-4-alkylimidazole, organic acids such as phthalic anhydride and pyromellitic anhydride, dicyanodiamine, triphenylphosphine and diazabicycloundecene can be used. The amount of the binder is preferably 0.1 to 10 parts by weight per 100 parts by weight of the adhesive layer.

In addition to the above components, organic and inorganic components such as antioxidants and ion scavengers may be added without any limitation insofar as the properties of the binder are not impaired.

The adhesive layer of the present invention may contain a thermoplastic resin. Thermoplastic resins are effective in controlling the softening temperature, and have functions of improving adhesive strength, flexibility, relaxing thermal stress, insulating properties due to low water absorption, and the like. The amount of the thermoplastic resin added is preferably 30 to 60 wt%, more preferably 35 to 55 wt% of the adhesive layer.

As the thermoplastic resin, known resins such as acrylonitrile-butadiene copolymer (NBR), acrylonitrile-butadiene rubber-styrene resin (ABS), styrene-butadiene-ethylene resin (SEBS), acrylic acid, polyvinyl butyral, polyamide, polyester amide, polyester, polyimide, polyurethane, and the like are exemplified. These thermoplastic resins preferably have a functional group reactive with the aforementioned thermosetting resins such as phenol resins and epoxy resins, and specifically have an amino group, a carboxyl group, an epoxy group, a hydroxyl group, a hydroxymethyl group, an isocyanate group, a vinyl group, a silanol group, and the like. These functional groups are preferable because the bonding with the thermosetting resin is strong and the heat resistance is improved. Among them, polyamide resins are preferred from the viewpoint of adhesion to copper foil, flexibility, and insulation, and can be used in various applications. In particular, a polyamide resin containing 36-carbon dicarboxylic acid (so-called dimer acid) as an essential component, which imparts flexibility to the pressure-sensitive adhesive layer and has excellent insulation properties due to low water absorption, is suitable. Further, it is preferable to use a polyamide resin which is a polyamide resin and has an ammonia value of 1 or more and less than 3. The dimer acid-containing polyamide resin can be obtained by polycondensation of a dimer acid and a diamine by a conventional method, but in this case, a diacid such as adipic acid, azelaic acid, or sebacic acid other than the dimer acid may be used as a copolymerization component. As the diamine, known diamines such as ethylenediamine, hexamethylenediamine and piperazine may be used, and 2 or more thereof may be used in combination from the viewpoint of hygroscopicity and solubility.

The acid value of the polyamide in the present invention is calculated from the titration amount of potassium hydroxide.

That is, 5g of polyamide was measured and dissolved in 50mL of a 2: 1 mixed solvent of toluene-n-butanol. Several drops of phenolphthalein indicator were added dropwise and the solution was titrated with 0.1N potassium hydroxide in methanol. The acid number was calculated from the amount of potassium hydroxide required for titration.

Av＝(56.1×0.1×F×(A-B))/50 (1)

In the formula, Av is acid value (value), F is alkali value of potassium hydroxide^*1A is the amount of potassium hydroxide solution (mL) required for titration, and B is the amount corresponding to A (mL) in the blank test. Here, the alkali value of potassium hydroxide^*1Is calculated by titration of potassium hydrogen phthalate and from the following formula (2).

F＝1000×0.5/(204.22×(V-b)×0.1) (2)

Where V is the amount (mL) of the potassium hydroxide solution required for titration, and b is the amount (mL) corresponding to V in the blank test.

An adhesive composed of only a polyamide resin having an acid value of less than 3 is inferior in punching processability. In the present invention, the proportion of the polyamide resin having an acid value of 3 or more to the total amount of the adhesive layer is preferably 3% by weight or more.

The proportion of the polyamide resin contained in the adhesive layer of the present invention is preferably in the range of 1 to 90 wt%. When the amount is less than 1% by weight, flexibility is problematic, and the adhesive layer may be cut. In addition, exceeding 90 wt% results in poor insulation and reduced reliability. More preferably in the range of 20 to 70 wt%.

The elastic modulus in the film width direction (TD) of the pressure-sensitive adhesive layer cured at 150 ℃ is preferably 1MPa to 5GPa, more preferably 2MPa to 1GPa, even more preferably 50MPa to 1GPa, and the linear expansion coefficient in the film width direction (TD) is preferably 10 to 500 ppm/DEG C, more preferably 20 to 300 ppm/DEG C at 25 to 150 ℃. The elastic modulus here is E' (storage elastic modulus) obtained by a dynamic viscoelasticity method, and the measurement conditions are shown in the evaluation method (8) of the example. If the modulus of elasticity is less than 1MPa, the heat resistance at the time of reflow is lowered, and therefore, such a composition is not preferable. When the elastic modulus is higher than 5GPa, the flexibility is not sufficient, and the warpage after the circuit pattern is formed becomes large, which is not preferable.

Further, a substrate for semiconductor connection used in the wire bonding method is more important to have a high modulus of elasticity at high temperature. Specifically, the wire bonding temperature is generally in the range of 110 to 200 ℃. The above range is preferable, taking as an index the elastic modulus at 150 ℃ (E' determined by the dynamic viscoelasticity method) as a representative value.

The elastic modulus in the film width direction (TD) of the pressure-sensitive adhesive layer after curing at 25 ℃ is preferably 10MPa to 5GPa, more preferably 100MPa to 3 GPa. The elastic modulus is lower than 10MPa, and the punching performance is reduced due to poor punching, so that the use is not selected. If the elastic modulus is more than 5GPa, the adhesive force with the copper foil is low, and the elastic modulus is not selected.

Further, the linear expansion coefficient in the film width direction (TD) at 25 to 150 ℃ is preferably 10 to 500 ppm/DEG C, more preferably 20 to 300 ppm/DEG C. The linear expansion coefficient is less than 10 ppm/DEG C or more than 500 ppm/DEG C, so that the warpage is increased, and the method is not selected. The method of measuring the linear expansion coefficient is shown in the evaluation method (9) of the following example.

The haze (ヘイズ) of the adhesive layer is preferably 20 or less, and a haze (ヘイズ) of more than 20 makes the wire-bonding property poor. The haze herein refers to the haze determined by SK7105, and is more accurately shown in the evaluation method (10) of the examples.

The semiconductor device of the present invention is preferably provided with a protective film layer with an adhesive. The protective film layer is not particularly limited as long as it can be peeled off from the adhesive surface without damaging the form of the adhesive-attached tape for semiconductor before hot pressing of the copper foil, and examples thereof include polyester films, polyolefin films, and laminated papers thereof, which are specially treated with silicone or fluorine compounds.

The following will exemplify a copper-clad laminate using the adhesive-attached tape of the present invention, a semiconductor connection substrate, and a method for manufacturing a semiconductor device.

(1) Example of method for manufacturing adhesive-carrying tape

An insulating film such as polyimide film having the important conditions of the present invention is coated with a coating material obtained by dissolving the above binder composition solution in a solvent, and dried. The coating is preferably performed so that the thickness of the adhesive layer is 5 to 125 μm. The drying condition is preferably 1-5 min at 100-200 ℃. The solvent is not particularly limited, and a mixed solvent of an aromatic solvent such as toluene or xylene and an alcohol such as methanol or ethanol is suitable.

Further, when an epoxy resin and a polyimide resin are mixed, the compatibility is generally poor, and the haze of the adhesive is increased. In the invention, when the epoxy resin and the polyamide resin are dissolved in the solvent, the epoxy resin and the polyamide resin are stirred for 2-4 hours at 60-70 ℃ in the solvent than other components, so that the epoxy resin and part of the polyamide resin are reacted in advance to improve the compatibility, and the turbidity of the adhesive can be reduced to be less than 20.

A protective film was laminated on the thus obtained film, and finally cut to a predetermined width to obtain an adhesive-attached tape.

Further, an adhesive composition solution is applied to a protective film such as a polyester film having releasability by a coating method, dried, and cut into an adhesive tape having a width of 29.7 to 60.6mm, and the adhesive tape for TAB may be formed into a shape by a hot roll method at a temperature of 100 to 160 ℃ and a pressure of 10N/cm and 5m/min at the center of an insulating film having a width of 35 to 70 mm.

(2) Examples of the method for producing a copper-clad laminate

Laminating 3-35 μm electrolytic or rolled copper foil on the tape sample with the adhesive of (1) by a hot pressing method under the conditions of 110-180 ℃, 30N/cm and 1 m/min. And (3) carrying out segmented heating and curing treatment for 1-24 hours at 80-300 ℃ in an air furnace according to the requirement to prepare the copper film laminated plate. In this case, the tape sample with the adhesive was perforated with device holes and solder holes before copper-coating.

(3) Example of method for manufacturing substrate for semiconductor connection

A photoresist protective film was formed on the copper foil surface of the copper foil of the copper film laminated plate obtained in (2) by a usual method, and the resist was etched, peeled, electrolytically plated, and a solder protective film was formed to obtain a substrate for semiconductor connection (patterning tape) (fig. 1).

(4) Example of method for manufacturing semiconductor device

First, a semiconductor Integrated Circuit (IC) using an epoxy die-bonding material was bonded to the patterned tape obtained in (3). Further, die bonding is performed on the reverse side at 110 to 250 ℃ for 3 seconds, and the die bonding material is cured as necessary. Then, wire bonding is performed at 110 to 200 ℃ and 60 to 110 kHz. Finally, the substrate was encapsulated with an epoxy-based encapsulating resin, and a FP-BGA type semiconductor device was obtained through a solder hole connection process (fig. 2). Further, an adhesive-carrying tape having an adhesive layer of 10 to 100 μm on both surfaces of an insulating film such as polyimide, which is a main condition of the die bonding material of the present invention, may be used. In this case, the conditions for laminating the pattern processing belt and the IC are preferably 80 to 200 ℃ and about 0.5 to 5 seconds. After lamination, the adhesive is cured by stepwise heat curing at 80 to 300 ℃ for 1 to 24 hours.

The present invention will be described with reference to examples, but the present invention is not limited to these examples. Before the examples are explained, the evaluation method will be described.

(evaluation method)

(1) Tensile modulus of elasticity

Measured according to ASTM-D882.

(2) Coefficient of linear expansion

The test piece was heated at 300 ℃ for 30min in a state allowing free shrinkage, placed in a TMA device, and the change in the size of the test piece at 50 ℃ to 200 ℃ was read under a load of 2g and a temperature rise rate of 20 ℃/min, and calculated by the following formula.

Coefficient of linear expansion (1/. degree. C.) - (L)₁-L₀)/L₀(200-50)

In the formula, L₀The length (mm) of the test piece at 50 ℃, L₁The length of the test piece at 200 ℃ was determined.

(3) Thermal shrinkage rate

Calculated according to the following formula.

Heat shrinkage (%) - (L)₁-L₂)×100/L₁

In the formula, L₁Is the length (mm) between the index points before heating, L₂Is the length (mm) between the punctuation points after heating.

(4) Coefficient of humidity expansion

The dimensional change of the test piece was read under a load of 5g, a temperature of 23 ℃ and a relative humidity of 5 to 60% RH, and calculated by the following formula.

Coefficient of humidity expansion (1/% RH) ═ L₁-L₀)/L₀(60-5)

In the formula, L₀Is the specimen length (mm) at 5% relative humidity, L₁Is the specimen length (mm) at 60% relative humidity.

(5) Water absorption rate

The insulating film layer was immersed in water at 23 ℃ for 24 hours, and the weight change of the insulating film layer before and after the immersion was measured and calculated by the following formula.

Water absorption (%) (weight after impregnation-weight before impregnation)/weight before impregnation.

(6) Thermal conductivity

The thermal conductivity was calculated from the following formula.

Thermal conductivity (W/m.K) is thermal diffusivity (m)²(s) × heat capacity (J/m)³K)。

A wafer-shaped sample having a diameter of about 10mm and a thickness of 50 μm was cut out, both sides sputtered with platinum were coated, and then carbon mist of about 1 μm was applied to both sides to blacken the surface, and the thermal diffusivity was measured by a laser flash method at 150 ℃.

The heat capacity is calculated from the product of the density measured by the Archimedes method at 23 ℃ and the specific heat. Heat was measured by a Differential Scanning Calorimeter (DSC) at a temperature rise rate of 10 ℃/min and measured at 150 ℃.

(7) Water vapor transmission rate

Measured according to ASTM-D50 at 38 ℃/90% RH for 24 h.

(8) Elastic modulus of adhesive

The adhesive single film was laminated to about 200 μm, and heat-cured at 80 ℃ for 4 hours, 100 ℃ for 5 hours, and 160 ℃ for 4 hours in this order in an air oven to obtain a cured adhesive single film. The storage elastic modulus E' of the rubber composition is measured by a dynamic viscoelasticity method according to the following measurement conditions:

the frequency is 110Hz, and the temperature rising speed is 3 ℃/min.

(9) Coefficient of acyl expansion of adhesive

A single adhesive film after curing was prepared as a test piece in the same manner as in (8). The sample was placed in a TMA apparatus, and the dimensional change of the test piece at 25 ℃ to 150 ℃ was measured at a load of 2g and a temperature rise rate of 20 ℃/min and calculated by the following equation.

Coefficient of linear expansion (1/. degree. C.) - (L)₁-L₀)/L₀(150-25)

In the formula, L₀The length (mm) of the test piece at 25 ℃, L₁The test piece length was 150 ℃.

(10) Turbidity of the adhesive

An adhesive sheet having an adhesive layer of 12 μm was coated on a PET film of 25 μm in thickness to obtain a measurement sample. Further, the diffusion transmittance and the total light transmittance were measured by an integrating sphere type light transmittance measuring instrument in accordance with JIS-K7105 using an uncoated PET film (25 μm) as a reference sample, and the haze (the ratio of the diffusion transmittance to the total light transmittance) of the reference sample was determined and taken as 0. Next, the diffusion transmittance and the total light transmittance of the pressure-sensitive adhesive sheet were measured to determine the haze of the pressure-sensitive adhesive layer itself.

(11) Production of substrate (Pattern processing Belt) for semiconductor connection for evaluation

An electrolytic copper foil (FQ-VLP foil manufactured by Mitsui Metal Co., Ltd.) of 18 μm was laminated on the tape with an adhesive at 140 ℃ under 10N/cm and 1m/min, and then heat-cured at 80 ℃ for 4 hours, 100 ℃ for 5 hours and 160 ℃ for 4 hours in this order in an air oven to obtain an adhesive tape with a copper foil.

Further, formation of a photoresist protective film, etching, peeling of the protective film, electrolytic gold plating, and formation of a solder resist (solder resist) were carried out by a usual method, and a substrate for semiconductor connection (patterning tape) having a nickel plating thickness of 3 μm and a gold plating thickness of 1 μm was produced (fig. 1). (12) Fabrication of semiconductor devices

An IC having an angle of 20mm made of an epoxy die-bonding material (LE-5000, manufactured by リンテツク Co.) was press-bonded to the patterned tape prepared in (11), and in this state, the resultant was heat-cured at 160 ℃ for 30 minutes. Then, the IC and the wiring board were connected by wire bonding with gold wires at 150 ℃ and 110kHz, and then resin-encapsulated. Finally, a solder hole was mounted under reverse flow to obtain a semiconductor device for evaluation.

(13) Method for producing warping sample with copper foil and method for evaluating warping

An electrolytic copper foil of 18 μm was laminated on the adhesive-carrying tape at 140 ℃ under 30N/cm at 1 m/min. Then, the sample was cut into a sample having a width of 35mm X200 mm, and the sample was subjected to heat curing treatment in an air oven at 80 ℃ for 4 hours, 100 ℃ for 5 hours, and 160 ℃ for 4 hours in this order to obtain a sample for warpage evaluation. The warpage was measured after conditioning at 23 ℃ and 55% RH (relative humidity) for 24 hours according to SEMI-G76-0299 standard. One side of the sample was pressed, and the height of the back side of the sample warped upward was measured by a vernier as a warping amount (the case of warping the copper foil upward was corrected).

(14) Warpage evaluation method in state where circuit pattern has been formed

A photoresist protective film was formed on the copper foil surface of the warpage evaluation sample prepared in (13) by a usual method, and the resultant was subjected to etching, protective film peeling and electrolytic gold plating to obtain a sample for evaluation. When the area of the adhesive was taken as 100, the area of the conductor portion (remaining ratio) was 30%. Warpage was measured in the same manner as in (13).

(15) Method for evaluating dimensional change rate

Sprocket holes, device holes, etc. are punched in the tape with the adhesive. On this belt, arbitrary two points A and B are taken, and the distance (L) between AB is measured₀) Next, a patterned tape was formed in accordance with the method (11), and the distance (L) between AB was measured. The dimensional change rate was obtained from the following equation.

Rate of change of dimension [ [ (L)₀-L)/L₀]×100。

(16) Wire bondability (WB Property, draft Strength)

An electrolytic copper foil of 18 μm was laminated on the adhesive sheet sample for semiconductor device at 135 ℃ under 0.1 MPa. Subsequently, the resultant was subjected to heat treatment in an air oven at 80 ℃ for 3 hours, 100 ℃ for 5 hours, and 150 ℃ for 5 hours in this order to obtain an adhesive sheet for a semiconductor device with a copper foil. A2 mm wide protective tape was attached to the copper foil surface of the obtained adhesive sheet for a semiconductor device with copper foil, and etching and separation of the protective tape were performed, followed by nickel plating with a thickness of 1 μm and electrolytic gold plating with a thickness of 0.5 μm. Gold wires were welded to the prepared sample under the following conditions.

The diameter of the gold wire is 25 mu m phi

Ultrasonic frequency 110kHz

The bonding temperature was 150 deg.C

Thereafter, the tensile strength of the gold wire and the sample is measured by a push-pull meter, and the higher the strength, the better, and when 7g or less, the more defective breakage in the temperature cycle test is increased, so that it is preferably more than 7 g.

(17) Workability of punching

A sample of an adhesive sheet for a semiconductor device comprising a protective film, an adhesive layer and an organic insulating film was punched with a circular (0.3 mm. phi.) hole from the protective film side by a die. Next, the protective film was removed, and the pressure-sensitive adhesive layer around the hole was observed. This is not preferable in the case where the pressure-sensitive adhesive layer is cracked or peeled from the organic insulating film.

(18) Solder heat resistance (reflow resistance)

After 5 semiconductor devices for evaluation made of (12) were humidified at 85 ℃/85% RH for 12 hours, they were subjected to heat treatment in an infrared reflow furnace having a maximum temperature of 240 ℃, and the number of component expansions caused thereby was examined.

The present invention will be described below with reference to the shrinkage ratio, but the present invention is not limited to these examples. The polyamide resin and polyimide base films used in the present example were produced by the methods shown in the following examples, except for those commercially available.

Reference example 1 (Synthesis of Polyamide resin)

Dimer acid (manufactured by ュニケマ, PRIPOL1009) and adipic acid as acid components, hexamethylenetetramine as amine components, reactants of these acids and amines, an antifoaming agent and 1% or less of phosphoric acid catalyst were added to adjust the polyamide reactant. The reaction product was thermally polymerized at 205 ℃ and, after adding an antioxidant according to a predetermined method, a polyamide resin was taken out. The acid/amine ratio and the polymerization time were appropriately adjusted to obtain 4 kinds of polyamide resins shown in Table 1.

Reference example 2 (Synthesis of base film)

N, N-dimethylacetamide is used as a solvent, and 3, 3 ', 4, 4' -biphenyltetracarboxylic dianhydride and p-phenylenediamine are reacted for 10 hours in an equimolar ratio to obtain a polyamine acid solution. The solution was cast on a glass plate to form a coating film, and the surface was dried with hot air at 130 ℃ for 60 seconds to obtain a self-supporting film. The film was fixed to a support and heat-treated at 200 to 450 ℃ to obtain polyimide films A to H, K, M having the characteristics shown in Table 3.

Pyromellitic dianhydride, 3 ', 4, 4 ' -biphenyltetracarboxylic dianhydride, p-phenylenediamine, and 4, 4 ' -diaminodiphenyl ether were added in a proportion of 20/80/50/50, and a polyimide film L having the physical properties shown in Table 1 was obtained by the same procedure.

Further, other base films described in table 3 used the following:

i: grinding with an attritor to obtain a material having an average thickness of 60 μm, ュピレツクス 75S manufactured by Udo Kyoho K.K.;

j: grinding with an attritor to obtain a material having an average thickness of 55 μm, ュピレツクス 125S manufactured by Udo Kyoho K.K.;

n: カプトン 200EN manufactured by Tokyo レ & デュポン;

o: the thickness of the glass was measured using ミクトロン 20 μm manufactured by Toho レ K.K.;

p: BIAC50 μm manufactured by ジヤパンゴアテツクス K.K.;

q: ュピレツクス 50S manufactured by Utsu Kyowa Kaisha;

r: カプトン 200V manufactured by Tokyo レ & デュポン;

s: ュピレツクス 75S manufactured by Utsu Kagaku K.K.

Examples 1 to 10, 12 and 14 to 21 and comparative examples 1 and 2

The polyamide resin produced in reference example 1 and other raw materials shown in Table 1 were dissolved in a methanol/chlorobenzene mixed solvent in the proportions shown in Table 2 to prepare a binder solution having a solid content of 20 wt%. First, the polyamide resin was stirred at 70 ℃ for 5 hours, then the epoxy resin was added, and further stirred for 3 hours. The phenol resin and the curing accelerator were added in this order while stirring at a solution temperature of 30 ℃ and stirred for 5 hours to prepare an adhesive solution.

The adhesive solution was applied to a protective film of polyethylene terephthalate (ルミラ -; manufactured by Toho レ Co., Ltd.) having a thickness of 25 μm by bar coating, dried to about 12 μm, and dried at 100 ℃ for 1min and 160 ℃ for 5min to obtain adhesive sheets I, II, III, and V. Further, the obtained adhesive sheet was laminated on the polyimide films A to H, K, L, M and N, I, J, R, S, アラミド film O and the liquid crystal polymer film P obtained in reference example 2 at 120 ℃ and 1MPa to prepare an adhesive-attached tape. The properties of the adhesive-attached tape obtained by combining the adhesive sheet and the polyimide film are shown in tables 3, 4, and 5. Subsequently, a patterned tape and a semiconductor device were produced by the methods described in the above evaluation methods (11) to (16), and evaluated. The results are shown in Table 3.

Example 11

In N, N-dimethylacetamide, 90 parts of (3-aminopropyl) tetramethyldisiloxane, 10 parts of p-phenylenediamine, and 100 parts of 3, 3 ', 4, 4' -biphenyltetracarboxylic dianhydride were dissolved to obtain a polyamic acid solution. The solution was applied to the base film shown in example 1 by a bar coating method so that the thickness after drying was 8 μm, and dried at 80 to 150 ℃ and heat-treated at 250 ℃ for 30min to obtain an adhesive-attached tape.

Further, the base film was the polyimide film A prepared in reference example 2.

Further, an electrolytic copper foil (FQ-VLP foil manufactured by Mitsui Metal Co., Ltd.) having a thickness of 18 μm was laminated on the tape with the adhesive under conditions of 230 ℃ C., 10N/cm and 1 m/min. Subsequently, the adhesive tape with the copper foil was obtained by heat-curing treatment at 100 ℃ for 4 hours, 160 ℃ for 4 hours, and 270 ℃ for 2 hours in this order in an inert atmosphere furnace. Then, a photoresist protective film was formed, etched, the protective film was peeled off, and electrolytic gold plating was performed to form a solder protective film by a usual method, thereby forming a substrate for semiconductor connection (patterning tape) having a nickel plating film thickness of 3 μm and a gold plating film thickness of 1 μm (FIG. 1). The characteristics of the resulting patterned belt are shown in table 3.

The patterned belt thus produced was used as a semiconductor device for evaluation in accordance with the evaluation method (12). The characteristics of the obtained semiconductor device are shown in table 3.

Example 13

40 parts of the polyamide resin II prepared in reference example 1, 10 parts of a bisphenol A-type epoxy resin (エピコ - ト 828 manufactured by oiled シエルエボキシ Co., Ltd.), 10 parts of a trifunctional bisphenol A-type epoxy resin (VG 3101 manufactured by Mitsui chemical Co., Ltd.), 27 parts of a tert-butylphenol resol (ヒタノ - ル 2442 manufactured by Hitachi chemical Co., Ltd.) and 15 parts of N, N '- (4, 4' -diphenylmethane) bismaleimide were blended, and stirred and mixed in a methanol/chlorobenzene mixed solvent at 30 ℃ to prepare a 20 wt% strength adhesive solution. Further, an adhesive-attached tape, a patterning tape, and a semiconductor device were produced from the polyimide film a produced in reference example 2 by the methods described above. The obtained properties are shown in table 3.

Examples 22 to 30 and comparative examples 3 to 7

The polyamide resin produced in reference example 1 and other raw materials shown in Table 1 were dissolved in a mixed solvent of methanol and chlorobenzene in the ratio shown in Table 2 to prepare a binder solution having a solid content of 20 wt%. First, the polyamide resin was stirred at 70 ℃ for 5 hours, then the epoxy resin was added, and further stirred for 3 hours. The phenol resin and the curing accelerator were added in this order while stirring at a solution temperature of 30 ℃ and stirred for 5 hours to prepare an adhesive solution.

The adhesive solution was applied to a protective film of polyethylene terephthalate (ルミラ -; manufactured by Toho レ Co., Ltd.) having a thickness of 25 μm by bar coating to dry it to about 18 μm, and dried at 100 ℃ for 1min and 160 ℃ for 5min to prepare an adhesive sheet.

Further, the obtained adhesive sheet was laminated on the polyimide film a obtained in reference example 2 under the same conditions to prepare an adhesive-attached tape. The characteristics of the resulting adhesive-carrying tape are shown in table 3. Subsequently, a patterning tape and a semiconductor device were produced by the above-described methods, and evaluated. The results are shown in Table 3.

As is apparent from the results of the examples and comparative examples in table 3, the adhesive tape for semiconductor obtained by the present invention, after copper-clad and patterned circuit formation, has reduced warpage and good wire bondability and punching properties in any case, can maintain low dimensional stability and high tensile strength after semiconductor device formation, and further has shown excellent solder heat resistance.

Possibility of industrial application

The invention provides a tape with an adhesive for semiconductor devices using a film-like adhesive, such as a tape for pattern processing with automatic bonding (TAB) system, a substrate for semiconductor connection such as an inter ポ - ザ -for Ball Grid Array (BGA) module, a die bonding process, a lead frame fixing tape, a LOC tape, an interlayer adhesive sheet for a multilayer substrate, etc., which are suitable for industrial use in semiconductor integrated circuit mounting, and a copper film laminated board, a substrate for semiconductor connection, and a semiconductor device using the same.

TABLE 1

	Species of	Name of article	Manufacturer(s)	Structure of the product	Remarks for note
						Polyamide	IIIIIIIV	Synthesis of reference example 1			Acid value 1, Mw: 100,000 acid value 9, Mw: 20,000 acid value 20, Mw: 10,000 acid value 40, Mw: 5,000
Epoxy resin	IIIIIIIVVVIVII	エピコ-ト807エピコ-ト828エポト-トYDC-1312エポト-トZX-1257EOCN-6000EP152VG3101	Oleoresin シエルエポキシ Kadoku Kangdu Kangzi (Kangzi) ペトロケミカルズ Sanjing Kangzi (Kangzi)	Phenol aldehyde type epoxy trifunctional bisphenol A epoxy for bisphenol A epoxy di-tert-butyl diglycidyl ether benzene epoxy dicyclopentadiene epoxy paint	Epoxy equivalent weight 170 "186" 175 "257" 205
						Phenol resins	IIIIIIIVVVIVIIVII	CKM1634CKM1634GPS2780PSM4326PR912PL4414H-1 ヒタノ - ル 2442	Eikeke chemical (strain) Eikede デュレス Eikede and Eikede chemical (strain) Eikede four forming strainsLihuacheng (plant)	Tert-butylphenol resol "phenol resin resol for p-t-butylphenol resol varnish phenol resin resol bisphenol A resol phenol resin resol cresol varnish t-butylphenol resol
Curing accelerator		2-undecenylimidazole

TABLE 2

Adhesive composition		Examples
														Species of	1	2	3	4	5	6	7	8	9	10	11	12
	Polyamide	I	30	30	30	30	30	30	30	30		45															35
II																						45
		III	10	10	10	10	10	10	10	10
IV
		Epoxy resin	I
II																					0.5	10.0
			III	5	5	5	5	5	5	5	5
IV	15													15	15	15	15	15	15	15
			V
VI																						10.0
			VII
Phenol resins	I													40	40	40	40	40	40	40	40
		II									15
	III																						25
		IV										10
	V																									65
		VI									15
	VII																					15
		VIII
	Curing accelerator														0.3	0.3	0.3	0.3	0.3	0.3	0.3	0.3

TABLE 3

Base film characteristics
														Species of		A	B	C	D	E	F	G	H	A	A	A	A
Thickness [ mu ] m]		50	50	50	50	50	50	50	50	50	50	50	50
														Coefficient of linear expansion [ ppm/. degree.C. ]](ppm/℃)	MD	18	14	12	10	9	21	19	18	16	16	16	16
TD	21	18	17	17	17	25	23	25	21	21	21	21
													TD-MD		5	4	5	7	8	4	4	7	5	5	5	5
Tensile elastic modulus [ MPa ]]	TD	7.9	8.0	9.8	7.4	9.4	8.5	8.5	6.5	7.9	7.9	7.9															7.9
													Thermal shrinkage [% ]]	TD	0.01	0.03	0.05	0.05	0.06	0.01	0.00	0.01	0.01	0.01	0.01	0.01
Coefficient of humidity expansion [ ppm/% RH]	TD	8.3	8.5	9.2	9.2	8.5	8.3	8.3	8.5	8.5	8.5	8.5															8.5
													Water absorption [% ]]	TD	1.4	1.3	1.4	1.5	1.3	1.3	1.4	1.3	1.4	1.4	1.4	1.4
Thermal conductivity [ W/m.K ]]		0.28	0.28	0.30	0.26	0.29	0.28	0.30	0.31	0.28	0.28	0.28															0.28
													Water vapor transmission rate [ g/m2/24H]		0.04	0.06	0.05	0.06	0.04	0.04	0.05	0.05	0.04	0.04	0.04	0.04
Physical Properties of adhesive
														Turbidity of water		3	3	3	3	3	3	3	3	37	19	10	50
Elastic modulus [ MPa ]]	25℃、11Hz	1100	1100	1100	1100	1100	1100	1100	1100	300	1050	4000	2500
														150℃、110Hz	135	135	135	135	135	135	135	135	60	10	900	85
	Coefficient of linear expansion [ ppm/. degree.C. ]]		105	105	105	105	105	105	105	105	100	110	20														75
Sample Properties
	Warp of clad copper foil [ mm ]]		2.8	2.5	2.4	2.9	3.0	2.3	2.0	2.0	3.0	3.0	3.2														2.9
Warp of attached pattern [ mm ]]															1.0	1.5	1.2	1.5	1.5	1.3	1.0	1.0	1.8	2.1	2.5	1.8
	Rate of change in size [% ]]		0.02	0.05	0.06	0.05	0.02	0.03	0.03	0.04	0.03	0.05	0.06														0.03
Wire bondability [ g ]]														Gold thread diameter 0.25mm (X)	9.5	9.0	9.0	9.5	0.5	9.0	8.5	8.8	8.0	8.0	9.5	8.0
	Gold thread diameter 0.25mm (sigma)	0.2	0.1	0.2	0.2	0.2	0.1	0.3	0.2	0.6	0.8	0.3	0.6
														Workability of punching		Good effect	Good effect	Good effect	Good effect	Good effect	Good effect	Good effect	Good effect	Good effect	Failure of the product	Good effect	Failure of the product
Solder Heat resistance (bad ratio)		0/5	0/5	0/5	0/5	0/5	0/5	0/5	0/5	0/5	0/5	0/5	0/5

TABLE 2 continuous (1)

Adhesive composition
														Species of	13	14	15	16	17	18	19	20	21	22	23	24
	Polyamide	I		30	30	30	30	30	30	30	30
II																							40
		III		10	10	10	10	10	10	10	10		40
IV																									40
		Epoxy resin	I
II																						19.7	19.7	19.7
			III		5	5	5	5	5	5	5	5
IV														15	15	15	15	15	15	15	15
			V
VI
			VII
Phenol resins	I														40	40	40	40	40	40	40	40	40	40			40
		II
	III
		IV
	V
		VI
	VII
		VIII
	Curing accelerator															0.3	0.3	0.3	0.3	0.3	0.3	0.3	0.3	0.3		0.3	0.3

TABLE 3 CONTINUOUS (1)

Base film characteristics
														Species of		A	I	J	K	L	N	N	O	P	A	A	A
Thickness [ mu ] m]		50	60	55	50	50	50	50	20	50	50	50	50
														Coefficient of linear expansion [ mm/. degree.C. ]](ppm/℃)	MD	16	19	19	15	13	21	14	14	16	16	16	16
TD	21	22	21	20	18	26	17	17	19	21	21	21
													TD-MD		5	3	2	5	5	5	3	3	3	5	5	5
Tensile elastic modulus [ MPa ]]	TD	7.9	7.1	6.7	9.7	6.0	6.2	6.1	11.0	6.0	7.9	7.9															7.9
													Thermal shrinkage [% ]]	TD	0.01	0.01	0.00	0.25	0.04	0.04	0.09	0.10	0.03	0.01	0.01	0.01
Coefficient of humidity expansion [ ppm/% RH]	TD	8.5	8.8	8.8	8.3	15.0	8.9	16.0	10.0	2.0	8.5	8.5															8.5
													Water absorption [% ]]	TD	1.4	1.4	1.5	1.4	1.6	1.4	1.9	0.5	0.1	1.4	1.4	1.4
Thermal conductivity [ W/m.K ]]		0.28	0.30	0.32	0.27	0.29	0.30	0.18	0.15	0.65	0.28	0.28															0.28
													Water vapor transmission rate [ g/m2/24h]		0.04	0.05	0.05	0.04	0.07	0.06	0.73	0.02	0.01	0.04	0.04	0.04
Physical Properties of adhesive
														Turbidity of water		15	3	3	3	3	3	3	3	3	17	18	18
Elastic modulus [ MPa ]]	25℃、110Hz	800	1100	1100	1100	1100	110	1100	1100	1100	990	1060	1000
														150℃、110Hz	15	135	135	135	135	135	135	135	135	90	105	125
	Coefficient of linear expansion [ ppm/. degree.C. ]]		250	105	105	105	105	105	105	105	105	100	63														72
Sample Properties
	Warp of clad copper foil [ mm ]]		3.0	2.0	5.0	6.1	3.8	3.5	4.5	3.5	3.1	2.1	1.6														2.6
Warp of attached pattern [ mm ]]															2.0	0.8	3.0	4.2	3.5	3.2	4.5	2.5	1.5	1.0	1.2	1.2
	Rate of change in size [% ]]		0.06	0.04	0.30	0.11	0.08	0.05	0.09	0.05	0.05	0.04	0.03														0.06
Wire bondability [ g ]]														Gold thread diameter 0.25mm (X)	7.2	9.0	7.6	7.4	9.5	9.0	8.5	8.8	9.3	8.5	10.5	10.0
	Gold wire diameter0.25mm(σ)	0.7	0.3	0.4	0.5	0.3	0.1	0.1	0.2	0.2	0.3	0.4	0.3
														Workability of punching		Good effect	Good effect	Good effect	Good effect	Good effect	Good effect	Good effect	Good effect	Good effect	Good effect	Good effect	Good effect
Solder Heat resistance (bad ratio)		0/5	0/5	0/5	0/5	0/5	0/5	3/5	3/5	5/5	0/5	0/5	0/5

TABLE 2 continuation (2)

Adhesive composition		Examples						Comparative example		Comparative example
															Species of	25	26	27	28	29	30	1	2	3	4	5	6	7
	Polyamide	I	30	30	30	30	30	30	30	30	40	40	30
I																			10	10
		III							10	10
IV															10	10	10	10							10	10	40
		Epoxy resin	I									19.7		19.7
II	19.7																						19.7			19.7
			III		19.7		5	5		5	5
IV																19.7	14.7	14.7	14.7	15	15
			V						5																		19.7
VI
			VII
Phenol resins	I														40	40	40	40	40	40	40	40	40	40	40	40			40
		II
	III
		IV
	V
		VI
	VII
		VIII
	Curing accelerator															0.3	0.3	0.3	0.3	0.3	0.3	0.3	0.3	0.3	0.3	0.3		0.3	0.3

TABLE 3 CONTINUOUS (2)

Base film characteristics
															Species of		A	A	A	A	A	A	Q	R	Q	Q	Q	Q	S
Thickness [ # m]		50	50	50	50	50	50	50	50	50	50	50	50	75
															Coefficient of linear expansion [ mm/. degree.C. ]](mm/℃)	MD	16	16	16	16	16	16	13	26	13	13	13	13	19
TD	21	21	21	21	21	21	14	26	14	14	14	14	22
														TD-MD		5	5	5	5	5	5	1	0	1	1	1	1	3
Tensile elastic modulus [ MPa ]]	TD	7.9	7.9	7.9	7.9	7.9	7.9	8.6	3.1	8.6	8.6	8.6	8.6																7.1
														Thermal shrinkage [% ]]	TD	0.01	0.01	0.01	0.01	0.01	0.01	0.04	0.00	0.04	0.04	0.04	0.04	0.01
Coefficient of humidity expansion [ ppm/% RH]	TD	8.5	8.5	8.5	8.5	8.5	8.5	8.3	25.0	8.3	8.3	8.3	8.3																8.8
														Water absorption [% ]]	TD	1.4	1.4	1.4	1.4	1.4	1.4	1.6	2.9	1.6	1.6	1.6	1.6	1.4
Thermal conductivity [ W/m.K ]]		0.28	0.28	0.28	0.28	0.28	0.28	0.32	0.18	0.32	0.32	0.32	0.32																0.30
														Water vapor transmission rate [ g/m2/24h]		0.04	0.04	0.04	0.04	0.04	0.04	0.04	1.13	0.04	0.04	0.04	0.04	0.05
Physical Properties of adhesive
															Turbidity of water		10	18	0	1	3	6	3	3	38	25	40	30	18
Elastic modulus [ Mpa ]]	25℃、110Hz	1050	250	1360	1550	1200	1000	1100	1100	100	150	300	350 400
															150℃、110Hz	135	137	140	135	131	108	135	135	4	8	22	30 45
	Coefficient of linear expansion [ ppm/. degree.C. ]]		80 65		81	75	69	95	105	105	506	320	200	210															103
Sample Properties
	Warp of clad copper foil [ mm ]]		1.9	2.6	2.1	2.0	2.5	2.5	5.0	7.0	6.2	7.4	5.7	7.8															2.0
Warp of attached pattern [ mm ]]																1.2	1.5	1.1	1.2	1.6	1.7	4.5	4.5	5.3	6.3	4.5	6.5	1.0
	Rate of change in size [% ]]		0.04	0.05	0.02	0.05	0.03	0.07	0.05	0.06	0.20	0.30	0.15	0.20															0.02
Wire bondability [ g ]]															Gold thread diameter 0.25mm (X)	11.0	11.5	12.0	10.0	8.7	9.5	7.0	7.0	2.0	4.5	5.2	5.0	9.0
	Gold thread diameter 0.25mm (sigma)	0.4	0.3	0.3	0.3	0.2	0.3	0.8	1.0	0.5	0.6	0.8	0.7	0.5
															Workability of punching		Good effect	Good effect	Good effect	Good effect	Good effect	Good effect	Good effect	Good effect	Failure of the product	Failure of the product	Failure of the product	Good effect	Failure of the product
Solder Heat resistance (bad ratio)		0/5	0/5	0/5	0/5	0/5	0/5	1/5	4/5	0/5	1/5	1/5	0/5	0/5

Claims (19)

1. A tape with an adhesive for use in a semiconductor device, the tape comprising a laminate of an insulating film layer and 1 or more layers of an adhesive layer in a semi-cured state, wherein the insulating film layer has a linear expansion coefficient of 17 ppm/DEG C to 30 ppm/DEG C in a film width direction at 50 to 200 ℃ and a tensile elastic modulus of 6GPa to 12GPa, and the adhesive layer has an elastic modulus of 1MPa to 5GPa at 150 ℃ in the width direction and a linear expansion coefficient of 10 ppm/DEG C to 500 ppm/DEG C at 25 to 150 ℃.

2. The adhesive-attached tape for semiconductor devices according to claim 1, wherein a coefficient of linear expansion in a width direction of the film at 50 ℃ to 200 ℃ is 19ppm/° c to 25ppm/° c.

3. The tape with an adhesive for a semiconductor device according to claim 1, wherein the tensile elastic modulus is 7GPa to 10 GPa.

4. The adhesive-carrying tape for semiconductor devices according to claim 1, wherein the thickness of the insulating film layer is 10 μm to 65 μm.

5. The tape with an adhesive for a semiconductor device according to claim 1, wherein the insulating film layer has a difference in linear expansion coefficient between the width direction and the length direction of the film of 3ppm/° C to 10ppm/° C.

6. The tape with an adhesive for a semiconductor device according to claim 1, wherein the insulating film has a coefficient of humidity expansion of 23 ppm/% RH or less.

7. The tape with adhesive for semiconductor devices according to claim 1, wherein the insulating film layer has a heat shrinkage ratio of 0.0% to 0.2%.

8. The adhesive-carrying tape for semiconductor devices according to claim 1, wherein the insulating film layer has a water absorption of 1.7% or less.

9. The adhesive-equipped tape for semiconductor devices according to claim 1, wherein the insulating film layer has a thermal conductivity of 0.4W/m-K or less.

10. As claimed in claim 1The adhesive tape for a semiconductor device is characterized in that the water vapor permeability of the insulating film layer is 0.04g/m in terms of film thickness per 1mm²More than 24 h.

11. The adhesive-equipped tape for semiconductor devices according to claim 1, wherein the insulating film layer contains a polyimide resin as a main component.

12. The adhesive-carrying tape for semiconductor devices according to claim 1, wherein the adhesive layer has a haze of 20 or less.

13. The tape with adhesive for semiconductor devices according to claim 12, wherein the adhesive layer contains at least 1 of polyamide resin and epoxy resin having an acid value of 3 or more.

14. The tape with adhesive for semiconductor devices according to claim 1, wherein the adhesive layer contains at least 1 thermosetting resin selected from the group consisting of epoxy resins, phenol resins, polyimide resins, and maleimide resins.

15. The adhesive-carrying tape for semiconductor devices according to claim 1, wherein the adhesive layer contains a thermosetting resin and a thermoplastic resin selected from at least one of polyamide, acrylonitrile-butadiene copolymer, polyester and polyurethane.

16. A copper-clad laminate using the adhesive-carrying tape for semiconductor devices according to claim 1.

17. A substrate for semiconductor connection, which uses the tape with an adhesive for a semiconductor device according to claim 1.

18. A semiconductor device using the copper film laminated plate as claimed in claim 16.

19. A semiconductor device using the substrate for semiconductor connection according to claim 17.