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GR20040100467A - System for repeatable and constant in the time supply of vapours produced by solid-state precursors - Google Patents

System for repeatable and constant in the time supply of vapours produced by solid-state precursors

Info

Publication number
GR20040100467A
GR20040100467A GR20040100467A GR20040100467A GR20040100467A GR 20040100467 A GR20040100467 A GR 20040100467A GR 20040100467 A GR20040100467 A GR 20040100467A GR 20040100467 A GR20040100467 A GR 20040100467A GR 20040100467 A GR20040100467 A GR 20040100467A
Authority
GR
Greece
Prior art keywords
mass flow
constant
vapour
mpm
ppm
Prior art date
Application number
GR20040100467A
Other languages
Greek (el)
Inventor
Δημητρης Δαβαζογλου
Original Assignee
Εθνικο Κεντρο Ερευνας Φυσικων Επιστημων "Δημοκριτος"
Δημητρης Δαβαζογλου
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Εθνικο Κεντρο Ερευνας Φυσικων Επιστημων "Δημοκριτος", Δημητρης Δαβαζογλου filed Critical Εθνικο Κεντρο Ερευνας Φυσικων Επιστημων "Δημοκριτος"
Priority to GR20040100467A priority Critical patent/GR20040100467A/en
Publication of GR20040100467A publication Critical patent/GR20040100467A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)

Abstract

The disclosed herein system destined for the constant and repeatable supply of vapours produced by solid-state precursors is composed of the de-aeration chamber 3, the rotational container 6 bearingmoving vanes 7 and containing the precursor 5. Unmoving vanes 8 are fixed on the pipe 2 injecting the air carrier into the chamber 3. The system also comprises the chamber's temperaturecontrolling system 4, the three-way by-pass valves 12, a mass flow regulator (PPM) 1 and a mass flow meter (MPM) 10,a variable speed motor 9 and electronic provisions 11 receiving signals from PPM and MPM. The moving and unmoving vanes mechanically powder the precursor. The electronic provisions regulate the rotational speed of the motor powdering the precursor and controlling, in this way, the free surface thereof, namely, the de-aeration rhythm so that the difference between the MPM and PPM indications is constant during the use of vapour. During use, the difference of the mass flow between gas carrier andmass flow of the mixture, consisted of gas carrier and produced vapour, is constant so that the mass flow of the vapour can be regulated. The rotational speed of the motor is easily and rapidly controlled, so that, with this system, the mass flow ofthe produced vapour may be controlled in real time.
GR20040100467A 2004-12-03 2004-12-03 System for repeatable and constant in the time supply of vapours produced by solid-state precursors GR20040100467A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GR20040100467A GR20040100467A (en) 2004-12-03 2004-12-03 System for repeatable and constant in the time supply of vapours produced by solid-state precursors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GR20040100467A GR20040100467A (en) 2004-12-03 2004-12-03 System for repeatable and constant in the time supply of vapours produced by solid-state precursors

Publications (1)

Publication Number Publication Date
GR20040100467A true GR20040100467A (en) 2006-09-21

Family

ID=38109677

Family Applications (1)

Application Number Title Priority Date Filing Date
GR20040100467A GR20040100467A (en) 2004-12-03 2004-12-03 System for repeatable and constant in the time supply of vapours produced by solid-state precursors

Country Status (1)

Country Link
GR (1) GR20040100467A (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5674574A (en) * 1996-05-20 1997-10-07 Micron Technology, Inc. Vapor delivery system for solid precursors and method regarding same
US20020008009A1 (en) * 1998-01-15 2002-01-24 3M Innovative Properties Company Spinning disk evaporator
US20030072875A1 (en) * 2001-10-11 2003-04-17 Sandhu Gurtej S. Delivery of solid chemical precursors
US20040000270A1 (en) * 2002-06-26 2004-01-01 Carpenter Craig M. Methods and apparatus for vapor processing of micro-device workpieces
US20040015300A1 (en) * 2002-07-22 2004-01-22 Seshadri Ganguli Method and apparatus for monitoring solid precursor delivery
US20040170403A1 (en) * 2001-09-14 2004-09-02 Applied Materials, Inc. Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5674574A (en) * 1996-05-20 1997-10-07 Micron Technology, Inc. Vapor delivery system for solid precursors and method regarding same
US20020008009A1 (en) * 1998-01-15 2002-01-24 3M Innovative Properties Company Spinning disk evaporator
US20040170403A1 (en) * 2001-09-14 2004-09-02 Applied Materials, Inc. Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
US20030072875A1 (en) * 2001-10-11 2003-04-17 Sandhu Gurtej S. Delivery of solid chemical precursors
US20040000270A1 (en) * 2002-06-26 2004-01-01 Carpenter Craig M. Methods and apparatus for vapor processing of micro-device workpieces
US20040015300A1 (en) * 2002-07-22 2004-01-22 Seshadri Ganguli Method and apparatus for monitoring solid precursor delivery

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