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GR1007247B - Integrated circuit of a constant reference voltage generator with sub-1 v supply voltage - Google Patents

Integrated circuit of a constant reference voltage generator with sub-1 v supply voltage

Info

Publication number
GR1007247B
GR1007247B GR20100100237A GR20100100237A GR1007247B GR 1007247 B GR1007247 B GR 1007247B GR 20100100237 A GR20100100237 A GR 20100100237A GR 20100100237 A GR20100100237 A GR 20100100237A GR 1007247 B GR1007247 B GR 1007247B
Authority
GR
Greece
Prior art keywords
current
reference voltage
circuit
voltage
common core
Prior art date
Application number
GR20100100237A
Other languages
Greek (el)
Inventor
Μιχαηλ Μπιρμπας
Ιωαννης Κικιδης
Φωτιος Πλεσσας
Αθανασιος Τσιτουρας
Original Assignee
Analogies S.A.,
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Analogies S.A., filed Critical Analogies S.A.,
Priority to GR20100100237A priority Critical patent/GR1007247B/en
Publication of GR1007247B publication Critical patent/GR1007247B/en

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)

Abstract

An integrated circuit of a reference voltage generator, designed so that it is used as a bias circuit of low sub-1V supply. The proposed reference voltage circuit consists of a common core of a conventional bandgap reference circuit, based on the use of a substrate vertical p-n-p bipolar transistors, and a voltage-to-current converter, V-I. The common core provides a current with positive temperature coefficient, while the voltage-current converter converts the emitter-base voltage of the substrate vertical p-n-p bipolar transistor of the common core to a current with negative temperature coefficient. These two currents with opposite temperature coefficients are suitably summed so that a total output current independent from the temperature variations is obtained. The output current is linearly converted to output reference voltage via a resistor. Two operational amplifiers are used with an output stage of the rail-to-rail type, so that the operation of the circuit is robust. The proposed invention can provide a current proportional to the absolute temperature, PTAT.
GR20100100237A 2010-04-19 2010-04-19 Integrated circuit of a constant reference voltage generator with sub-1 v supply voltage GR1007247B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GR20100100237A GR1007247B (en) 2010-04-19 2010-04-19 Integrated circuit of a constant reference voltage generator with sub-1 v supply voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GR20100100237A GR1007247B (en) 2010-04-19 2010-04-19 Integrated circuit of a constant reference voltage generator with sub-1 v supply voltage

Publications (1)

Publication Number Publication Date
GR1007247B true GR1007247B (en) 2011-04-28

Family

ID=43500992

Family Applications (1)

Application Number Title Priority Date Filing Date
GR20100100237A GR1007247B (en) 2010-04-19 2010-04-19 Integrated circuit of a constant reference voltage generator with sub-1 v supply voltage

Country Status (1)

Country Link
GR (1) GR1007247B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102694514A (en) * 2012-05-29 2012-09-26 上海艾为电子技术有限公司 Power amplifier

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0895147A1 (en) * 1997-07-29 1999-02-03 Kabushiki Kaisha Toshiba Reference voltage generation circuit and reference current generation circuit
US6529066B1 (en) * 2000-02-28 2003-03-04 National Semiconductor Corporation Low voltage band gap circuit and method
US6771055B1 (en) * 2002-10-15 2004-08-03 National Semiconductor Corporation Bandgap using lateral PNPs

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0895147A1 (en) * 1997-07-29 1999-02-03 Kabushiki Kaisha Toshiba Reference voltage generation circuit and reference current generation circuit
US6529066B1 (en) * 2000-02-28 2003-03-04 National Semiconductor Corporation Low voltage band gap circuit and method
US6771055B1 (en) * 2002-10-15 2004-08-03 National Semiconductor Corporation Bandgap using lateral PNPs

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ANNE-JOHAN ANNEMA: "Low-Power Bandgap References Featuring DTMOST's", IEEE JOURNAL OF SOLID-STATE CIRCUITS, IEEE SERVICE CENTER, PISCATAWAY, NJ, USA, vol. 34, no. 7, 1 July 1999 (1999-07-01), XP011061031, ISSN: 0018-9200 *
KLAAS-JAN DE LANGEN ET AL: "Compact Low-Voltage Power-Efficient Operational Amplifier Cells for VLSI", IEEE JOURNAL OF SOLID-STATE CIRCUITS, IEEE SERVICE CENTER, PISCATAWAY, NJ, USA, vol. 33, no. 10, 1 October 1998 (1998-10-01), XP011060825, ISSN: 0018-9200 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102694514A (en) * 2012-05-29 2012-09-26 上海艾为电子技术有限公司 Power amplifier
CN102694514B (en) * 2012-05-29 2015-02-04 上海艾为电子技术有限公司 Power amplifier

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PG Patent granted

Effective date: 20110513