GB977328A - Improvements relating to the production of semi-conductor devices having alloyed junctions - Google Patents

Abstract

977,328. Semi-conductor devices. TELEFUNKEN A.G. March 6, 1961 [March 4, 1960], No. 8000/61. Heading H1K. An alloyed junction in a semi-conductor device is produced by heating electrode material in a depression on a support and the semi-conductor body to alloying temperature and then bringing the material and body into contact. Fig. 1 shows a semi-conductor body 1 resting on a ledge 3 in a receptacle 2 and held in position by a weight 4 which contacts only the supported regions of the body. A pellet of alloying substance 5 is placed in a depression 6 in support 7, pellet 5 being just sufficient in size to fill depression 6 when molten. Support 7 is placed on a ceramic tube 8 having a temperature-sensitive device 9, and inserted into the bottom of receptacle 2 where it is heated to alloying temperature out of contact with body 1. During heating, undesired impurities may escape by evaporation via slits provided in receptacle 2. The support 7 is then raised to bring the alloying material and the body into contact over a predetermined area against the pressure of weight 4. In a modification (Fig. 3, not shown) the support comprises a plurality of portions each providing a depression, which are used to provide a series of annular electrodes; springs are associated with the portions so that the contacts between the body and the material in each of the depressions may be made successively. Fig. 3 shows a further modification for use in a sliding kiln. The support assembly is situated in a quartz tube 19 through which flow protective gases and contact between the semiconductor body 1 and the molten material in depression 6 is produced by withdrawing slider 20 to allow receptacle 2 to drop downwards. Two adjacent complete support arrangements are provided. A further arrangement is described (Figs. 5 and 6, not shown) suitable for use with a moving belt and a tunnel kiln, in which a lever is rotated to allow the semiconductor support to slide into contact with the support containing the alloying material. The alloying material may consist of indium and the devices may form diodes or transistors.