[go: up one dir, main page]

GB968230A - Method of producing semiconductor devices - Google Patents

Method of producing semiconductor devices

Info

Publication number
GB968230A
GB968230A GB1208/62A GB120862A GB968230A GB 968230 A GB968230 A GB 968230A GB 1208/62 A GB1208/62 A GB 1208/62A GB 120862 A GB120862 A GB 120862A GB 968230 A GB968230 A GB 968230A
Authority
GB
United Kingdom
Prior art keywords
nickel
layer
junction
lead
gold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1208/62A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC BROWN BOVERI and CIE
BBC Brown Boveri AG Switzerland
Original Assignee
BBC BROWN BOVERI and CIE
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC BROWN BOVERI and CIE, BBC Brown Boveri AG Switzerland filed Critical BBC BROWN BOVERI and CIE
Publication of GB968230A publication Critical patent/GB968230A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H10P52/00—
    • H10P95/00—

Landscapes

  • Weting (AREA)
  • Thyristors (AREA)

Abstract

968,230. Semi-conductor devices. BROWN, BOVERI & CO. Ltd. Jan. 12, 1962 [Jan. 13, 1961], No. 1208/62. Heading H1K. A method of producing semi-conductor elements with PN junctions comprises forming a layer of opposite conductivity type on a body of semi-conductor material of the other conductivity type and then coating the body with a layer of nickel, an element then being cut out of the body perpendicularly to the nickel layer and the adjacent PN junction of one face and being ground so that the element is bevelled to reduce the area of the nickel coating and to expose the edge of the PN junction within the area of the bevel. As compared with customary Mesa constructions the invention increases the distance between the edge of the PN junction and the nickel coat which constitutes an electrode. As shown in Fig. 5, the body 1 of silicon has an impurity layer 2 formed by diffusion, the layer having been removed from the bottom surface and replaced by a doped layer 4 for the injection of majority carriers. The whole of body 1 is coated with nickel 5 which may be protected against subsequent etching by a gold topcoat. The body is then cut, by a cutting tool or by a tool with the use of a grinding medium, to have the shape shown in Fig. 6, the plan view corresponding to which is circular. On one side of the element the nickel coat is reduced in area to the disc 7 and at the midpoint of the bevel 6 the PN junction 8 is exposed. Gold, silver, or base metal leads may be connected to the nickel layers 7 and 5 on opposite sides of the element by means of a lead or lead alloy solder. The element may be etched to remove lattice defects due to grinding, but this is not necessary if the grinding medium is fine enough. If etching is employed it may be done before or after the attachment of leads and if employed in the latter case when the leads are of base metal, such as copper, they must be protected with a coat of gold, silver or lead, and the lead or lead alloy solder is chlorinated. The resulting element has a P+PN structure.
GB1208/62A 1961-01-13 1962-01-12 Method of producing semiconductor devices Expired GB968230A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEB60834A DE1154871B (en) 1961-01-13 1961-01-13 Method for producing semiconductor components with at least one pn junction

Publications (1)

Publication Number Publication Date
GB968230A true GB968230A (en) 1964-09-02

Family

ID=6972991

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1208/62A Expired GB968230A (en) 1961-01-13 1962-01-12 Method of producing semiconductor devices

Country Status (3)

Country Link
CH (1) CH397878A (en)
DE (1) DE1154871B (en)
GB (1) GB968230A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3268309A (en) * 1964-03-30 1966-08-23 Gen Electric Semiconductor contact means
US3368120A (en) * 1965-03-22 1968-02-06 Gen Electric Multilayer contact system for semiconductor devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL215949A (en) * 1956-04-03
NL241982A (en) * 1958-08-13 1900-01-01
FR1213751A (en) * 1958-10-27 1960-04-04 Telecommunications Sa Process for manufacturing transistrons with n-p-n junctions obtained by double diffusion
FR1228285A (en) * 1959-03-11 1960-08-29 Semiconductor structures for parametric microwave amplifier

Also Published As

Publication number Publication date
CH397878A (en) 1965-08-31
DE1154871B (en) 1963-09-26

Similar Documents

Publication Publication Date Title
US3339274A (en) Top contact for surface protected semiconductor devices
US3197681A (en) Semiconductor devices with heavily doped region to prevent surface inversion
GB1070278A (en) Method of producing a semiconductor integrated circuit element
GB1398006A (en) Semiconductor electroluminescent devices and to methods of making them
US3046324A (en) Alloyed photovoltaic cell and method of making the same
US3716765A (en) Semiconductor device with protective glass sealing
GB1285258A (en) Improvements in or relating to semiconductor devices
US3463971A (en) Hybrid semiconductor device including diffused-junction and schottky-barrier diodes
US3821782A (en) High voltage semiconductor device with plural grooves
GB911292A (en) Improvements in and relating to semi-conductor devices
US3271636A (en) Gallium arsenide semiconductor diode and method
GB949646A (en) Improvements in or relating to semiconductor devices
GB1088637A (en) Four layer semiconductor switching devices having a shorted emitter
GB968230A (en) Method of producing semiconductor devices
GB1035167A (en) Photosensitive devices using semiconductor bodies and optical detectors including such devices
US3909926A (en) Method of fabricating a semiconductor diode having high voltage characteristics
JP3357394B2 (en) Bidirectional surge suppressor circuit
US3364399A (en) Array of transistors having a layer of soft metal film for dividing
US3611554A (en) Methods of manufacture of semiconductor elements and elements manufactured thereby
GB973722A (en) Improvements in or relating to semiconductor devices
GB1228819A (en)
US3450958A (en) Multi-plane metal-semiconductor junction device
US3354003A (en) Semi-conductor junction with a depletion layer
GB975960A (en) Improvements in or relating to methods of manufacturing semiconductor devices
GB1031976A (en) Contacting semiconductor bodies