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GB936812A - Improvements in or relating to transistors - Google Patents

Improvements in or relating to transistors

Info

Publication number
GB936812A
GB936812A GB41959/60A GB4195960A GB936812A GB 936812 A GB936812 A GB 936812A GB 41959/60 A GB41959/60 A GB 41959/60A GB 4195960 A GB4195960 A GB 4195960A GB 936812 A GB936812 A GB 936812A
Authority
GB
United Kingdom
Prior art keywords
junction
electrode
collector
base
dec
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB41959/60A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens and Halske AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG
Publication of GB936812A publication Critical patent/GB936812A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/0422—Anti-saturation measures

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

936,812. Transistors. SIEMENS & HALSKE A.G. Dec. 6, 1960 [Dec. 7, 1959], No. 41959/60. Class 37. In a junction transistor comprising an additional electrode which forms a rectifying junction with the base zone at a distance from the emitter junction greater than the emittercollector spacing the electrode is connected directly with the collector electrode. The rectifying junction, poled in the same sense as the collector junction prevents the transistor from being driven into saturation. In an example, Fig. 2, the N-type. base zone is a disc mounted on an annular base contact M, and the additional junction A is formed opposite the contact at the edge of the disc. The device is mounted in a housing through which the emitter, base and collector leads extend.
GB41959/60A 1959-12-07 1960-12-06 Improvements in or relating to transistors Expired GB936812A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES66142A DE1188732B (en) 1959-12-07 1959-12-07 Transistor, in particular for use as a switch

Publications (1)

Publication Number Publication Date
GB936812A true GB936812A (en) 1963-09-11

Family

ID=7498582

Family Applications (1)

Application Number Title Priority Date Filing Date
GB41959/60A Expired GB936812A (en) 1959-12-07 1960-12-06 Improvements in or relating to transistors

Country Status (4)

Country Link
CH (1) CH384723A (en)
DE (1) DE1188732B (en)
GB (1) GB936812A (en)
NL (1) NL258753A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3571674A (en) * 1969-01-10 1971-03-23 Fairchild Camera Instr Co Fast switching pnp transistor
FR2234469A1 (en) * 1973-06-22 1975-01-17 Lucas Electrical Co Ltd

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE863372C (en) * 1944-09-30 1953-01-15 Siemens Ag Crystal detector for voltage measurement or demodulation of electrical waves
DE851228C (en) * 1950-12-08 1952-10-02 Schaub Appbau Ges M B H G Mounted rectifier
US2655608A (en) * 1952-07-22 1953-10-13 Bell Telephone Labor Inc Semiconductor circuit controlling device
US2748041A (en) * 1952-08-30 1956-05-29 Rca Corp Semiconductor devices and their manufacture
US2872594A (en) * 1953-12-31 1959-02-03 Ibm Large signal transistor circuits having short "fall" time
US2846592A (en) * 1955-05-20 1958-08-05 Ibm Temperature compensated semiconductor devices
DE1048358B (en) * 1955-08-12 1959-01-08
BE558188A (en) * 1956-06-08
DE1786107U (en) * 1956-09-25 1959-04-02 Siemens Ag POWER TRANSISTOR.
NL208177A (en) * 1957-05-01

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3571674A (en) * 1969-01-10 1971-03-23 Fairchild Camera Instr Co Fast switching pnp transistor
FR2234469A1 (en) * 1973-06-22 1975-01-17 Lucas Electrical Co Ltd

Also Published As

Publication number Publication date
NL258753A (en)
CH384723A (en) 1965-02-26
DE1188732B (en) 1965-03-11

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