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GB927869A - A method of producing two or more junctions on the same surface of a semi-conductor body - Google Patents

A method of producing two or more junctions on the same surface of a semi-conductor body

Info

Publication number
GB927869A
GB927869A GB3274/60A GB327460A GB927869A GB 927869 A GB927869 A GB 927869A GB 3274/60 A GB3274/60 A GB 3274/60A GB 327460 A GB327460 A GB 327460A GB 927869 A GB927869 A GB 927869A
Authority
GB
United Kingdom
Prior art keywords
semi
producing
junctions
same surface
conductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3274/60A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of GB927869A publication Critical patent/GB927869A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10P95/00—
    • H10P95/50—
    • H10W99/00—

Landscapes

  • Conductive Materials (AREA)
  • Catalysts (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The following alloys, the compositions of which are given in terms of proportions by weight, are used in producing semi-conductor devices (see Group XXXVI): tin 100, arsenic 1; gold 100, antimony 0.7: indium 100, germanium 10, aluminium 1, gold 0.1.
GB3274/60A 1959-01-29 1960-01-29 A method of producing two or more junctions on the same surface of a semi-conductor body Expired GB927869A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEL32329A DE1113990B (en) 1959-01-29 1959-01-29 Method for the simultaneous production of two or more alloy contacts on the same surface of a semiconductor body

Publications (1)

Publication Number Publication Date
GB927869A true GB927869A (en) 1963-06-06

Family

ID=7265871

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3274/60A Expired GB927869A (en) 1959-01-29 1960-01-29 A method of producing two or more junctions on the same surface of a semi-conductor body

Country Status (4)

Country Link
DE (1) DE1113990B (en)
FR (1) FR1246537A (en)
GB (1) GB927869A (en)
NL (1) NL247848A (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2695852A (en) * 1952-02-15 1954-11-30 Bell Telephone Labor Inc Fabrication of semiconductors for signal translating devices

Also Published As

Publication number Publication date
FR1246537A (en) 1960-11-18
NL247848A (en)
DE1113990B (en) 1961-09-21

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