GB913817A - A method for the production of a semi-conductor element - Google Patents

Abstract

913,817. Semi-conductor devices. SIEMENSSCHUCKERTWERKE A.G. Sept. 10, 1959 [Sept. 10, 1958], No. 30936/59. Class 37. A semi-conductor device is made by stacking the parts of the device in a mould with a baseplate adapted to form an integral part of a housing for the device uppermost and acting as a loading weight and then heating to alloy or solder the parts together. In an example (Fig. 1), a gold antimony alloy member 3, silicon plate 4, aluminium foil 5, molybdenum plate 6, solder foil 7 and massive plug shaped base member 8 are stacked as shown in a graphite mould 1 and heated in vacuo or nitrogen to form a PN junction in the silicon plate and to form a unitary rectifier assembly. A housing member comprising a tube 11, through one end of which a metal tube 13 is sealed via glass bead 12, is electrically welded to the periphery of the flange 8b of the base member. After filling with protective gas the tube 13 is sealed by pinching off and if necessary welding or soldering its end about contact wire 14. If the various parts of the rectifier are of different areas a mould of stepped cross-section may be used to laterally locate the individual parts. In the mass production of such rectifiers, handling is facilitated by use of a single graphite plate constituting a plurality of moulds.