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GB9111468D0 - Current limiting circuit for a static ram - Google Patents

Current limiting circuit for a static ram

Info

Publication number
GB9111468D0
GB9111468D0 GB919111468A GB9111468A GB9111468D0 GB 9111468 D0 GB9111468 D0 GB 9111468D0 GB 919111468 A GB919111468 A GB 919111468A GB 9111468 A GB9111468 A GB 9111468A GB 9111468 D0 GB9111468 D0 GB 9111468D0
Authority
GB
United Kingdom
Prior art keywords
current limiting
limiting circuit
static ram
static
ram
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB919111468A
Other versions
GB2248131A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9111468D0 publication Critical patent/GB9111468D0/en
Publication of GB2248131A publication Critical patent/GB2248131A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
GB9111468A 1990-09-19 1991-05-28 Current limiting circuit for a static ram Withdrawn GB2248131A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900014828A KR920006985A (en) 1990-09-19 1990-09-19 Static load control circuit

Publications (2)

Publication Number Publication Date
GB9111468D0 true GB9111468D0 (en) 1991-07-17
GB2248131A GB2248131A (en) 1992-03-25

Family

ID=19303774

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9111468A Withdrawn GB2248131A (en) 1990-09-19 1991-05-28 Current limiting circuit for a static ram

Country Status (6)

Country Link
JP (1) JPH04132080A (en)
KR (1) KR920006985A (en)
DE (1) DE4037207A1 (en)
FR (1) FR2666913B1 (en)
GB (1) GB2248131A (en)
IT (1) IT1250098B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001143476A (en) 1999-11-15 2001-05-25 Mitsubishi Electric Corp Static semiconductor memory device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5828679B2 (en) * 1979-04-25 1983-06-17 富士通株式会社 Write circuit for semiconductor memory device
DE3004565C2 (en) * 1980-02-07 1984-06-14 Siemens AG, 1000 Berlin und 8000 München Integrated digital semiconductor circuit
JPS57162181A (en) * 1981-03-31 1982-10-05 Fujitsu Ltd Semiconductor memory device
JPS58161195A (en) * 1982-03-19 1983-09-24 Fujitsu Ltd Static type semiconductor storage device
JPS5922295A (en) * 1982-06-30 1984-02-04 Fujitsu Ltd Semiconductor storage device
US4758994A (en) * 1986-01-17 1988-07-19 Texas Instruments Incorporated On chip voltage regulator for common collector matrix programmable memory array
US4857772A (en) * 1987-04-27 1989-08-15 Fairchild Semiconductor Corporation BIPMOS decoder circuit
US4874967A (en) * 1987-12-15 1989-10-17 Xicor, Inc. Low power voltage clamp circuit
KR910004736B1 (en) * 1988-12-15 1991-07-10 삼성전자 주식회사 Power voltage control circuit of static memory device
JPH02177084A (en) * 1988-12-27 1990-07-10 Mitsubishi Electric Corp semiconductor integrated circuit

Also Published As

Publication number Publication date
ITRM910698A0 (en) 1991-09-18
JPH04132080A (en) 1992-05-06
ITRM910698A1 (en) 1993-03-18
GB2248131A (en) 1992-03-25
FR2666913B1 (en) 1993-12-10
FR2666913A1 (en) 1992-03-20
KR920006985A (en) 1992-04-28
DE4037207A1 (en) 1992-04-02
DE4037207C2 (en) 1993-08-19
IT1250098B (en) 1995-03-30

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)