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GB917727A - Improvements in or relating to semi-conductor arrangements - Google Patents

Improvements in or relating to semi-conductor arrangements

Info

Publication number
GB917727A
GB917727A GB38837/60A GB3883760A GB917727A GB 917727 A GB917727 A GB 917727A GB 38837/60 A GB38837/60 A GB 38837/60A GB 3883760 A GB3883760 A GB 3883760A GB 917727 A GB917727 A GB 917727A
Authority
GB
United Kingdom
Prior art keywords
indium
alloyed
semi
aluminium
germanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB38837/60A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens and Halske AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG
Publication of GB917727A publication Critical patent/GB917727A/en
Expired legal-status Critical Current

Links

Classifications

    • H10D64/011—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H10P32/16—
    • H10P95/00—
    • H10P95/50—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)

Abstract

917,727. Semi-conductor devices. SIEMENS & HALSKE A.G. Nov. 11, 1960 [Nov. 13, 1959], No. 38837/60. Class 37. In the manufacture of a semi-conductor device having a PN junction an aluminium body is provided with a metal coating to prevent oxidation, is alloyed with a metallic substance capable of wetting the semi-conductor, and is thereafter alloyed into the semi-conductor. The metallic substance may be the same material as the coating, and may consist of indium, tin or lead. In one embodiment (Fig. 1), germanium wafer 1 is placed in a mould 5, indium pellet 2 is placed on its surface, and the indium and germanium are then alloyed by heating. An aluminium disc is coated by immersion in liquid indium at 350‹ C., using an alcoholic solution of anhydrous stannous chloride as a flux. The coated disc 3 is then placed on the indium-covered area of the germanium and is alloyed therewith by heating in a hydrogen atmosphere. In a second embodiment (Fig. 2) an indium-coated aluminium disc 3 is alloyed with an indium pellet 2 at 600 ‹ to 640 ‹ C. in a hydrogen atmosphere so that the indium partly dissolves the aluminium. The A1/IN body is then tipped on to germanium wafer 1 at 300 ‹ to 400 ‹ C. and is alloyed therewith. After the germanium has been wetted by the indium the actual alloying may be carried out in a non-reducing atmosphere, e.g. nitrogen, or nitrogen and oxygen. The percentage of aluminium in the A1/IN alloy may be between 0.1 and 5% by weight. Reference has been directed by the Comptroller to Specification 851,978.
GB38837/60A 1959-11-13 1960-11-11 Improvements in or relating to semi-conductor arrangements Expired GB917727A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0065818 1959-11-13

Publications (1)

Publication Number Publication Date
GB917727A true GB917727A (en) 1963-02-06

Family

ID=7498329

Family Applications (1)

Application Number Title Priority Date Filing Date
GB38837/60A Expired GB917727A (en) 1959-11-13 1960-11-11 Improvements in or relating to semi-conductor arrangements

Country Status (4)

Country Link
BE (1) BE596820A (en)
CH (1) CH427037A (en)
GB (1) GB917727A (en)
NL (2) NL255823A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3390024A (en) * 1965-03-11 1968-06-25 Texas Instruments Inc Flux for fusing tin to gallium arsenide and method of making and using same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3390024A (en) * 1965-03-11 1968-06-25 Texas Instruments Inc Flux for fusing tin to gallium arsenide and method of making and using same

Also Published As

Publication number Publication date
NL255823A (en)
CH427037A (en) 1966-12-31
NL138893B (en) 1973-05-15
BE596820A (en) 1961-03-01

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