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GB907103A - Improvements relating to the production of transistors - Google Patents

Improvements relating to the production of transistors

Info

Publication number
GB907103A
GB907103A GB24242/58A GB2424258A GB907103A GB 907103 A GB907103 A GB 907103A GB 24242/58 A GB24242/58 A GB 24242/58A GB 2424258 A GB2424258 A GB 2424258A GB 907103 A GB907103 A GB 907103A
Authority
GB
United Kingdom
Prior art keywords
pellet
wafer
alloying
antimony
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB24242/58A
Inventor
Norman Joseph Crocker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Associated Electrical Industries Ltd
Original Assignee
Associated Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Associated Electrical Industries Ltd filed Critical Associated Electrical Industries Ltd
Priority to GB24242/58A priority Critical patent/GB907103A/en
Priority to FR801235A priority patent/FR1231411A/en
Publication of GB907103A publication Critical patent/GB907103A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
    • H01F1/0302—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity characterised by unspecified or heterogeneous hardness or specially adapted for magnetic hardness transitions
    • H01F1/0311—Compounds
    • H01F1/0313—Oxidic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
    • H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
    • H01F1/405—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted of IV type, e.g. Ge1-xMnx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)

Abstract

907,103. Transistors. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. July 3, 1959 [July 28, 1958], No. 24242/58. Class 37. A method of making a graded base junction transistor comprises alloying to opposite faces of a wafer of N(P) type conductivity a first pellet comprising an acceptor (donor) impurity and a second pellet comprising an acceptor and a donor of lower segregation coefficient but higher diffusion constant than the acceptors. During alloying and subsequent cooling a PN junction is formed under the first pellet and a P(N) region overlying a graded restivity N(P) region beneath the second pellet. In the embodiment a low-resistivity surface layer is formed by diffusion of arsenic or antimony vapour into a 20 ohm cm. N type germanium body. Pellets 3 and 5 (Fig. 3) of indium and indium, gallium and antimony respectively and a base contact ring of gold antimony eutectic are then alloyed to the wafer by heating to 800‹ C. for 30 minutes and cooling at a rate of 20 ‹ C. per minute. The depth of alloying is such that PN junction J is with the high resistivity core of the wafer. The device is completed by electrolytically etching troughs 9 and 10 respectively about pellets 3 and 5. Trough 9 is made deeper than the low resistivity layer 2 to isolate pellet 3, which forms the collector electrode, therefrom whereas trough 10 is shallower than the layer to allow a continuous low resistance path from the effective part of the base zone to base contact 8.
GB24242/58A 1958-07-28 1958-07-28 Improvements relating to the production of transistors Expired GB907103A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB24242/58A GB907103A (en) 1958-07-28 1958-07-28 Improvements relating to the production of transistors
FR801235A FR1231411A (en) 1958-07-28 1959-07-27 Improvements in the manufacture of transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB24242/58A GB907103A (en) 1958-07-28 1958-07-28 Improvements relating to the production of transistors

Publications (1)

Publication Number Publication Date
GB907103A true GB907103A (en) 1962-10-03

Family

ID=10208666

Family Applications (1)

Application Number Title Priority Date Filing Date
GB24242/58A Expired GB907103A (en) 1958-07-28 1958-07-28 Improvements relating to the production of transistors

Country Status (2)

Country Link
FR (1) FR1231411A (en)
GB (1) GB907103A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3275482A (en) * 1963-09-25 1966-09-27 Siemens Ag Semiconductor p-n junction device and method of its manufacture

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3275482A (en) * 1963-09-25 1966-09-27 Siemens Ag Semiconductor p-n junction device and method of its manufacture
DE1236661B (en) * 1963-09-25 1967-03-16 Siemens Ag Semiconductor arrangement with a pn junction produced by alloying a metal pill

Also Published As

Publication number Publication date
FR1231411A (en) 1960-09-29

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