GB832979A - Improvements in and relating to semi-conductor rectifier units - Google Patents
Improvements in and relating to semi-conductor rectifier unitsInfo
- Publication number
- GB832979A GB832979A GB12121/56A GB1212156A GB832979A GB 832979 A GB832979 A GB 832979A GB 12121/56 A GB12121/56 A GB 12121/56A GB 1212156 A GB1212156 A GB 1212156A GB 832979 A GB832979 A GB 832979A
- Authority
- GB
- United Kingdom
- Prior art keywords
- seal
- semi
- base plate
- indium
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10W40/47—
Landscapes
- Die Bonding (AREA)
- Rectifiers (AREA)
Abstract
832,979. Semi-conductor devices. ENGLISH ELECTRIC CO. Ltd. April 18, 1957 [April 20, 1956], No. 12121/56. Class 37. A method of making a semi-conductor rectifier unit comprising two body members and a seal defining an enclosure within which a semiconductor rectifier element is situated is characterized in that during the final stages of the assembly together of the members and seal at least a part of the unit is heated whereby dimensional changes on subsequent cooling places the rectifier element in compression. In the embodiment shown a first sub-assembly is formed by brazing one of the metal ends 19 of the metal and glass seal 13 to a terminal member 10. The terminal member consists of a brass sleeve 10a housing an internallythreaded flanged copper cylinder provided with radial cooling passages 14. A second subassembly is formed by soft soldering a fused junction-type of diode 12 base plate downwards to the face of a second terminal member 11. This member is similar to member 10 except that the internally-threaded cylinder 10b is replaced by an extended cylinder 11b threaded at 16. After the copper face of member 10 has been tinned with a low-melting point solder and heated to just above the melting point of indium the sub-assemblies are brought together in a jig. As soon as the member 10 has become bonded to the indium electrode 22 of the junction diode it is cooled by circulating water through it. The metal part 20 of the seal is then heated inductively to braze or solder it to member 11 at D while the remainder of the assembly is maintained at a lower temperature by circulation of water through members 10 and 11. During the cooling operation, following the completion of the joint D, the contraction of the metal part 20 places the junction diode in compression. The fused junction diode is made by assembling an indium disc, an N-type germanium disc and a base plate tinned with an antimonious soft solder in superposed relationship and heating to fuse them together. In a modification the base plate may be omitted and the germanium disc soldered directly to member 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB12121/56A GB832979A (en) | 1956-04-20 | 1956-04-20 | Improvements in and relating to semi-conductor rectifier units |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB12121/56A GB832979A (en) | 1956-04-20 | 1956-04-20 | Improvements in and relating to semi-conductor rectifier units |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB832979A true GB832979A (en) | 1960-04-21 |
Family
ID=9998745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB12121/56A Expired GB832979A (en) | 1956-04-20 | 1956-04-20 | Improvements in and relating to semi-conductor rectifier units |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB832979A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1204751B (en) * | 1960-09-30 | 1965-11-11 | Siemens Ag | Semiconductor component with a disk-shaped housing and method for producing such a component |
-
1956
- 1956-04-20 GB GB12121/56A patent/GB832979A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1204751B (en) * | 1960-09-30 | 1965-11-11 | Siemens Ag | Semiconductor component with a disk-shaped housing and method for producing such a component |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SE7709310L (en) | COOLED CIRCUIT PACKAGE AND METHOD OF MANUFACTURE THEREOF | |
| ES270107A1 (en) | A method of joining aluminum members (Machine-translation by Google Translate, not legally binding) | |
| GB1099906A (en) | Improvements in or relating to methods of making electrical connections | |
| MX145056A (en) | IMPROVEMENTS IN THE METHOD FOR MANUFACTURING A CIRCUIT PACKAGE WITH HEAT CONDUCTION COOLING | |
| ES8204224A1 (en) | IC chip mounting assembly and a method of manufacturing such assembly. | |
| US3005867A (en) | Hermetically sealed semiconductor devices | |
| US3220095A (en) | Method for forming enclosures for semiconductor devices | |
| US2864980A (en) | Sealed current rectifier | |
| GB866932A (en) | Improvements in semiconductor devices and methods of manufacture thereof | |
| GB832979A (en) | Improvements in and relating to semi-conductor rectifier units | |
| US3419763A (en) | High power transistor structure | |
| GB1065897A (en) | A semiconductor arrangement | |
| GB1040106A (en) | Optical lens device | |
| US3039175A (en) | Sealing of electrical semiconductor devices | |
| US3534233A (en) | Hermetically sealed electrical device | |
| US3518507A (en) | Semiconductor device having pressureheld contacts | |
| GB600050A (en) | Electric iron and method of making of same | |
| JPS629722Y2 (en) | ||
| US3150297A (en) | Lead wire connection for semiconductor device | |
| KR100239673B1 (en) | Electrical Resistance Welding Machine for Terminal Junction of Lead Wire | |
| GB1077656A (en) | Improvements in or relating to semiconductor devices | |
| US2972654A (en) | Thermoelectric generator | |
| GB1156146A (en) | Method of making Contact to Semiconductor Components | |
| GB890687A (en) | Improvements relating to dynamo-electric machines | |
| JPS5578552A (en) | Semiconductor |