GB818931A - Improvements in or relating to processes for the forming of an electrode on a semi-conductor - Google Patents
Improvements in or relating to processes for the forming of an electrode on a semi-conductorInfo
- Publication number
- GB818931A GB818931A GB24231/56A GB2423156A GB818931A GB 818931 A GB818931 A GB 818931A GB 24231/56 A GB24231/56 A GB 24231/56A GB 2423156 A GB2423156 A GB 2423156A GB 818931 A GB818931 A GB 818931A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrode
- semi
- conductor
- alloy
- aug
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P95/00—
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F3/00—Changing the physical structure of non-ferrous metals or alloys by special physical methods, e.g. treatment with neutrons
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H10P95/50—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Thyristors (AREA)
- Thermistors And Varistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
818,931. Semi-conductor devices. SIEMENS-SCHUCKERTWERKE A.G. Aug. 7, 1956 [Aug. 5, 1955], No. 24231/56. Class 37. An alloy junction electrode on a semi-conductor body is produced by placing a mass of impurity material of desired electrode shape on the semi-conductor and covering the marginal zone(s) of this mass with an auxiliary body of higher melting point material which adheres to the impurity material when this is molten, so that the latter maintains the desired shape during the alloying process. Figs. 1 and 2 show a germanium or silicon body 1 bearing a circular disc 2 of impurity material such as indium, the marginal zone of which is covered by an annular body 3 of material such as molybdenum, tantalum, tungsten or iron. Alternatively the electrode may be rectangular or elliptical, or be in the shape of an annulus, the inner and outer marginal zones each being covered by an annular auxiliary body, with, for example, further auxiliary bridge pieces linking the inner and outer annuli. An intermediate coating of gold, tin, and tin-indium alloy may be provided between the electrode and high melting point body to assist adhesion. The body may be affixed to the electrode material prior to the alloy heating step, or may be shaped to interlock with the electrode material on assembly. The semi-conductor material may alternatively consist of a binary A III , Bv compound. The process may be used to provide a rectifier or a transistor.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES45065A DE1153119B (en) | 1955-08-05 | 1955-08-05 | Method for manufacturing a semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB818931A true GB818931A (en) | 1959-08-26 |
Family
ID=7485379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB24231/56A Expired GB818931A (en) | 1955-08-05 | 1956-08-07 | Improvements in or relating to processes for the forming of an electrode on a semi-conductor |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US2798013A (en) |
| CH (1) | CH345079A (en) |
| DE (1) | DE1153119B (en) |
| FR (1) | FR1157770A (en) |
| GB (1) | GB818931A (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE557039A (en) * | 1956-04-27 | |||
| US2979428A (en) * | 1957-04-11 | 1961-04-11 | Rca Corp | Semiconductor devices and methods of making them |
| US3070465A (en) * | 1957-07-26 | 1962-12-25 | Sony Corp | Method of manufacturing a grown type semiconductor device |
| BE570141A (en) * | 1957-08-08 | |||
| US3093882A (en) * | 1958-09-30 | 1963-06-18 | Siemens Ag | Method for producing a silicon semiconductor device |
| US2995475A (en) * | 1958-11-04 | 1961-08-08 | Bell Telephone Labor Inc | Fabrication of semiconductor devices |
| US3270257A (en) * | 1964-02-19 | 1966-08-30 | Premier Microwave Corp | Disposable diode holder |
| DE1280420B (en) * | 1964-04-02 | 1968-10-17 | Siemens Ag | Method for contacting semiconductor components |
| US3515953A (en) * | 1967-03-21 | 1970-06-02 | Rca Corp | Adaptive diode having mobile doping impurities |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL136384B (en) * | 1943-05-01 | 1900-01-01 | ||
| US2651009A (en) * | 1952-05-03 | 1953-09-01 | Bjorksten Res Lab Inc | Transistor design |
| BE525280A (en) * | 1952-12-31 | 1900-01-01 | ||
| US2743693A (en) * | 1954-11-22 | 1956-05-01 | Motorola Inc | Transistor assembly jig |
-
1955
- 1955-08-05 DE DES45065A patent/DE1153119B/en active Pending
-
1956
- 1956-07-17 FR FR1157770D patent/FR1157770A/en not_active Expired
- 1956-07-19 US US598954A patent/US2798013A/en not_active Expired - Lifetime
- 1956-07-28 CH CH345079D patent/CH345079A/en unknown
- 1956-08-07 GB GB24231/56A patent/GB818931A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CH345079A (en) | 1960-03-15 |
| US2798013A (en) | 1957-07-02 |
| DE1153119B (en) | 1963-08-22 |
| FR1157770A (en) | 1958-06-03 |
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