GB815208A - Improvements in or relating to the manufacture of transistors and other semi-conductor devices - Google Patents
Improvements in or relating to the manufacture of transistors and other semi-conductor devicesInfo
- Publication number
- GB815208A GB815208A GB23936/57A GB2393657A GB815208A GB 815208 A GB815208 A GB 815208A GB 23936/57 A GB23936/57 A GB 23936/57A GB 2393657 A GB2393657 A GB 2393657A GB 815208 A GB815208 A GB 815208A
- Authority
- GB
- United Kingdom
- Prior art keywords
- lead
- semi
- electrolyte
- metal
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P14/47—
Landscapes
- Junction Field-Effect Transistors (AREA)
- Weting (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
815,208. Joining leads to semi-conductor devices by electrolysis. TELEFUNKEN G.m.b.H. July 29, 1957 [Aug. 27, 1956], No. 23936/57. Classes 37 and 41. A lead is attached to a transistor or other semi-conductor body by mounting the lead with its end facing and adjacent the surface of the body in a metal containing electrolyte cathodically depositing metal on said surface opposite said lead serving as anode until the deposit bridges the gap between the body and the lead, and then cathodically depositing more metal on said bridging deposit with the help of an auxiliary electrode as anode. Preferably the end of the lead facing the body is pointed and the auxiliary electrode is a ring concentric. with the lead. The semi-conductor body may be coated with an insulating laquer except where the metal is to be deposited and immersed in the electrolyte or may be arranged as shown so that only one face of the body 3 contacts the electrolyte 2. The cavity in the body may be formed initially by drilling and finally shaped by electrolytic etching using a non-plating electrolyte, the extent of the etching being limited by the potential barrier 10 set up by the back-bias applied to the contact 9 on the back of the semi-conductor body, which back-bias also effects metal deposition if a plating metal salt is then added to the electrolyte.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DET12602A DE1029485B (en) | 1956-08-27 | 1956-08-27 | Method for attaching a lead wire to the surface of a semiconducting body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB815208A true GB815208A (en) | 1959-06-17 |
Family
ID=7547072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB23936/57A Expired GB815208A (en) | 1956-08-27 | 1957-07-29 | Improvements in or relating to the manufacture of transistors and other semi-conductor devices |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1029485B (en) |
| GB (1) | GB815208A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1184019B (en) | 1959-06-09 | 1964-12-23 | Siemens Ag | Device for electrolytic etching of a semiconductor component with an essentially monocrystalline semiconductor body |
| US3042603A (en) * | 1959-05-26 | 1962-07-03 | Philco Corp | Thickness modifying apparatus |
| NL256300A (en) * | 1959-05-28 | 1900-01-01 | ||
| NL284582A (en) * | 1961-11-25 |
-
1956
- 1956-08-27 DE DET12602A patent/DE1029485B/en active Pending
-
1957
- 1957-07-29 GB GB23936/57A patent/GB815208A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1029485B (en) | 1958-05-08 |
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