GB806789A - Improvements in or relating to cadmium sulphide - Google Patents
Improvements in or relating to cadmium sulphideInfo
- Publication number
- GB806789A GB806789A GB2744/56A GB274456A GB806789A GB 806789 A GB806789 A GB 806789A GB 2744/56 A GB2744/56 A GB 2744/56A GB 274456 A GB274456 A GB 274456A GB 806789 A GB806789 A GB 806789A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystal
- activated
- support
- cadmium sulphide
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
- H05B33/145—Arrangements of the electroluminescent material
-
- H10P95/00—
Landscapes
- Photovoltaic Devices (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
806,789. Semi-conductor devices. GENERAL ELECTRIC CO, Ltd. April 25, 1957 [Jan. 27, 1956], No. 2744/56. Class 37. [Also in Group XL (a)] A crystalline body of cadmium sulphide is activated, to reduce its resistivity and to increase its photosensitivity, by the application to the body of an electric field sufficient to cause dielectric breakdown, followed by the passage through the body of a current at a density of not less than 0.1 amp./sq. cm. Preferably the body is heated from an external source during the process. As described, in the manufacture of a photo-conductive cell, a thin flat grown single crystal of cadmium sulphide is mounted on a ceramic support, and two lead wires sealed through the support make connection with graphite coatings disposed at opposite ends of the exposed face of the crystal which is disposed in an oven and, having been connected in series with a high resistance is heated to 400 C. and a voltage sufficient to cause dielectric breakdown is applied for five minutes, after which the crystal is allowed to cool. The crystal and its support are then enclosed in transparent synthetic resin. A crystal activated according to the invention may also be used in conjunction with an electroluminescent element, e.g. zinc sulphide activated by copper, in an electro-optical trigger device; further possible applications are large area rectifiers and photovoltaic cells.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2744/56A GB806789A (en) | 1956-01-27 | 1956-01-27 | Improvements in or relating to cadmium sulphide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2744/56A GB806789A (en) | 1956-01-27 | 1956-01-27 | Improvements in or relating to cadmium sulphide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB806789A true GB806789A (en) | 1958-12-31 |
Family
ID=9745070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2744/56A Expired GB806789A (en) | 1956-01-27 | 1956-01-27 | Improvements in or relating to cadmium sulphide |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB806789A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1283965B (en) * | 1959-05-06 | 1968-11-28 | Texas Instruments Inc | Hermetically sealed semiconductor device |
-
1956
- 1956-01-27 GB GB2744/56A patent/GB806789A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1283965B (en) * | 1959-05-06 | 1968-11-28 | Texas Instruments Inc | Hermetically sealed semiconductor device |
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