GB775817A - Improvements in or relating to processes and apparatus for drawing crystalline bodies , such as semi-conductor bodies - Google Patents
Improvements in or relating to processes and apparatus for drawing crystalline bodies , such as semi-conductor bodiesInfo
- Publication number
- GB775817A GB775817A GB6991/55A GB699155A GB775817A GB 775817 A GB775817 A GB 775817A GB 6991/55 A GB6991/55 A GB 6991/55A GB 699155 A GB699155 A GB 699155A GB 775817 A GB775817 A GB 775817A
- Authority
- GB
- United Kingdom
- Prior art keywords
- nucleus
- powder
- molten
- charge
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000155 melt Substances 0.000 abstract 4
- 239000000843 powder Substances 0.000 abstract 4
- 230000004927 fusion Effects 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000010453 quartz Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 238000005054 agglomeration Methods 0.000 abstract 1
- 230000002776 aggregation Effects 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000008187 granular material Substances 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
- 230000001939 inductive effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000012768 molten material Substances 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
In a process for the production of a crystalline body, such as a semi-conductor body, by drawing from a melt, the charge to form the melt consists of a loose agglomeration of relatively small particles such as granules or powder, and only part of the charge undergoes fusion, the fusion preferably being confined to a centre portion <PICT:0775817/III/1> of the charge. A receptacle 2 contains the powder 3, which may be silicon or germanium, above which is an induction heating coil 4 provided with a downwardly directed concentrator in the form of a conical copper strip spiral 5. A part 11 of the material is maintained in the molten state by inductive heating, and a rigid continuous layer 12 forms around the molten material 11. A fused rod 13 is drawn upwardly out of the melt, the rod being clamped with a quartz tube 14 in a holder 15. The holder 15 is rotated on a shaft 16 passing through a hood 7, a vacuum being maintained under the hood 7 or the space filled with a protective gas. Fresh material is fed to the molten part 11 from a container 18. At the start of the process a nucleus is introduced into the quartz tube 14, where it is surrounded by a molybdenum or tungsten ring 22. The nucleus is lowered to the surface of the powder in container 2, where the ring 22 is heated by the coil 4, and so melts the tip of the nucleus until induced currents flow therein. The molten nucleus then preheats the powder adjacent thereto, which is melted and the drawing is commenced.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE775817X | 1954-03-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB775817A true GB775817A (en) | 1957-05-29 |
Family
ID=6686382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB6991/55A Expired GB775817A (en) | 1954-03-09 | 1955-03-09 | Improvements in or relating to processes and apparatus for drawing crystalline bodies , such as semi-conductor bodies |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB775817A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3351433A (en) * | 1962-12-12 | 1967-11-07 | Siemens Ag | Method of producing monocrystalline semiconductor rods |
| DE1256626B (en) * | 1963-03-13 | 1967-12-21 | Siemens Ag | Process for the production of semiconductor rods by drawing from the melt |
| US3433602A (en) * | 1966-01-29 | 1969-03-18 | Sharp Kk | Method for growing single crystals |
| CN104456068A (en) * | 2014-11-07 | 2015-03-25 | 广西大学 | Vacuumizing and protective gas charging device and application method thereof |
-
1955
- 1955-03-09 GB GB6991/55A patent/GB775817A/en not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3351433A (en) * | 1962-12-12 | 1967-11-07 | Siemens Ag | Method of producing monocrystalline semiconductor rods |
| DE1256626B (en) * | 1963-03-13 | 1967-12-21 | Siemens Ag | Process for the production of semiconductor rods by drawing from the melt |
| US3433602A (en) * | 1966-01-29 | 1969-03-18 | Sharp Kk | Method for growing single crystals |
| CN104456068A (en) * | 2014-11-07 | 2015-03-25 | 广西大学 | Vacuumizing and protective gas charging device and application method thereof |
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