GB751126A - Improvements in or relating to methods of producing semi-conductive monocrystals - Google Patents
Improvements in or relating to methods of producing semi-conductive monocrystalsInfo
- Publication number
- GB751126A GB751126A GB6236/54A GB623654A GB751126A GB 751126 A GB751126 A GB 751126A GB 6236/54 A GB6236/54 A GB 6236/54A GB 623654 A GB623654 A GB 623654A GB 751126 A GB751126 A GB 751126A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- semi
- monocrystals
- relating
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000004857 zone melting Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
- Furnace Details (AREA)
Abstract
751,126. Zone-melting process. PHILIPS ELECTRICAL INDUSTRIES, Ltd. March 3, 1954 [March 6, 1953], No. 6236/54. Class 82(1). [Also in Group XXXVI] A monocrystal semi-conductor having portions of different resistivities and/or different conductivity types is produced by placing the semi-conductor material 5 in an elongated vessel 1, producing a molten zone 3 which travels along the body so that a monocrystal is formed behind the zone, and adding acceptor or donor materials locally to the molten zone. The acceptor or donor impurity may be placed on the semiconductor as at 6 and 7. Germanium or silicon may be used, and heating may be effected by a high frequency coil 4.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL751126X | 1953-03-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB751126A true GB751126A (en) | 1956-06-27 |
Family
ID=19824526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB6236/54A Expired GB751126A (en) | 1953-03-06 | 1954-03-03 | Improvements in or relating to methods of producing semi-conductive monocrystals |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR1094267A (en) |
| GB (1) | GB751126A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ITVI20110323A1 (en) * | 2011-12-19 | 2013-06-20 | Pvd Technologies Snc Di Vidani A E A | FORCED DRIVING METHOD OF A SEMICONDUCTOR MATERIAL LINE AND PLANT THAT MAKES THIS METHOD |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1238448B (en) * | 1957-07-26 | 1967-04-13 | Siemens Ag | Method for doping a rod-shaped semiconductor body |
-
1954
- 1954-03-03 GB GB6236/54A patent/GB751126A/en not_active Expired
- 1954-03-04 FR FR1094267D patent/FR1094267A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ITVI20110323A1 (en) * | 2011-12-19 | 2013-06-20 | Pvd Technologies Snc Di Vidani A E A | FORCED DRIVING METHOD OF A SEMICONDUCTOR MATERIAL LINE AND PLANT THAT MAKES THIS METHOD |
| WO2013093747A1 (en) * | 2011-12-19 | 2013-06-27 | Pvd Technologies Snc Di Vidani A. E A. | A method for the forced doping of a doped silicon ingot and system for exploiting the method |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1094267A (en) | 1955-05-16 |
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