GB682203A - Process for growing a single crystal of quartz - Google Patents
Process for growing a single crystal of quartzInfo
- Publication number
- GB682203A GB682203A GB5572/50A GB557250A GB682203A GB 682203 A GB682203 A GB 682203A GB 5572/50 A GB5572/50 A GB 5572/50A GB 557250 A GB557250 A GB 557250A GB 682203 A GB682203 A GB 682203A
- Authority
- GB
- United Kingdom
- Prior art keywords
- quartz
- nutrient
- vessel
- temperatures
- seed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010453 quartz Substances 0.000 title abstract 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 8
- 239000013078 crystal Substances 0.000 title abstract 2
- 235000015097 nutrients Nutrition 0.000 abstract 5
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical compound OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 abstract 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 abstract 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 abstract 2
- 239000012736 aqueous medium Substances 0.000 abstract 2
- 238000007789 sealing Methods 0.000 abstract 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 abstract 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 abstract 1
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 abstract 1
- 229910000288 alkali metal carbonate Inorganic materials 0.000 abstract 1
- 150000008041 alkali metal carbonates Chemical class 0.000 abstract 1
- 229910052792 caesium Inorganic materials 0.000 abstract 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 239000012634 fragment Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 229910052744 lithium Inorganic materials 0.000 abstract 1
- 239000002609 medium Substances 0.000 abstract 1
- 230000005012 migration Effects 0.000 abstract 1
- 238000013508 migration Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 229910052700 potassium Inorganic materials 0.000 abstract 1
- 239000011591 potassium Substances 0.000 abstract 1
- 230000000284 resting effect Effects 0.000 abstract 1
- WPFGFHJALYCVMO-UHFFFAOYSA-L rubidium carbonate Chemical class [Rb+].[Rb+].[O-]C([O-])=O WPFGFHJALYCVMO-UHFFFAOYSA-L 0.000 abstract 1
- 229910000029 sodium carbonate Inorganic materials 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/18—Quartz
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
<PICT:0682203/III/1> Quartz crystals are grown from seed in an aqueous medium containing an alkali metal carbonate or bicarbonate, at high temperatures and pressures, by utilizing the variation of solubility of quartz in the medium with temperatures. Prepared temperatures are above the critical temperature (375 DEG C) of the aqueous medium but below the inversion temperature of quartz, the temperature difference between quartz seed and nutrient being 1-2 DEG C and the pressure being of the order of hundreds of atmospheres. The preferred solution is 1-2N sodium carbonate, but sodium bicarbonate, potassium, lithium, caesium and rubidium carbonates and bicarbonates are also referred to. The free space of the pressure vessel after allowing for all solid contents should be filled at least one-third and preferably over one-half full with the carbonate solution to develop the desired pressure. Comparatively large size quartz fragments are preferably used as nutrient to prevent migration of the nutrient to the crystallizing region of the pressure vessel. Suitable apparatus comprises a pressure cylinder 11 surrounded by insulation 29 and resting on an electrical hot-plate 21. The cylinder is sealed by a plug 16 a shouldder 17 on the plug being forced against a gasket 14 by an annular threaded member 18. External and internal thermocouples 39, 43 and 46 are provided for controlling the temperatures. The internal thermocouples may be dispensed with when the relation between internal and external temperatures has been established. Quartz nutrient is placed in the bottom of the vessel which is then filled to the desired degree with the carbonate solution and a quartz seed 78 suspended in the upper part of the vessel from the sealing plug 16. A modified form of pressure vessel is shown and described having a sealing plug with a large peripheral flange by which it is bolted to a corresponding flange on the pressure vessel. This construction facilitates dissipation of heat from the upper part of the vessel and allows a larger temperature gradient between nutrient and seed.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US682203XA | 1949-05-21 | 1949-05-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB682203A true GB682203A (en) | 1952-11-05 |
Family
ID=22081167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5572/50A Expired GB682203A (en) | 1949-05-21 | 1950-03-06 | Process for growing a single crystal of quartz |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB682203A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1051823B (en) * | 1953-10-02 | 1959-03-05 | Gen Electric Co Ltd | Process for making quartz crystals |
| DE1051822B (en) * | 1953-05-15 | 1959-03-05 | Gen Electric Co Ltd | Process for making quartz crystals |
| US2895812A (en) * | 1954-07-28 | 1959-07-21 | Bell Telephone Labor Inc | Growing of quartz crystals |
| US3051558A (en) * | 1956-09-06 | 1962-08-28 | Clevite Corp | Hydrothermal synthesis of quartz |
| US3101259A (en) * | 1959-03-27 | 1963-08-20 | Sawyer Res Products Inc | Method of controlling deposition of crystalline material from solution on a seed by use of a temperature profile curve |
| US3356463A (en) * | 1965-09-24 | 1967-12-05 | Bell Telephone Labor Inc | Synthetic quartz growth |
| US3936276A (en) * | 1973-12-06 | 1976-02-03 | Vladimir Sergeevich Balitsky | Process for producing amethyst crystal |
| US4021294A (en) * | 1974-01-18 | 1977-05-03 | Valentin Evstafievich Khadzhi | Process for producing amethyst crystals |
-
1950
- 1950-03-06 GB GB5572/50A patent/GB682203A/en not_active Expired
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1051822B (en) * | 1953-05-15 | 1959-03-05 | Gen Electric Co Ltd | Process for making quartz crystals |
| DE1051823B (en) * | 1953-10-02 | 1959-03-05 | Gen Electric Co Ltd | Process for making quartz crystals |
| US2895812A (en) * | 1954-07-28 | 1959-07-21 | Bell Telephone Labor Inc | Growing of quartz crystals |
| US3051558A (en) * | 1956-09-06 | 1962-08-28 | Clevite Corp | Hydrothermal synthesis of quartz |
| US3101259A (en) * | 1959-03-27 | 1963-08-20 | Sawyer Res Products Inc | Method of controlling deposition of crystalline material from solution on a seed by use of a temperature profile curve |
| US3356463A (en) * | 1965-09-24 | 1967-12-05 | Bell Telephone Labor Inc | Synthetic quartz growth |
| US3936276A (en) * | 1973-12-06 | 1976-02-03 | Vladimir Sergeevich Balitsky | Process for producing amethyst crystal |
| US4021294A (en) * | 1974-01-18 | 1977-05-03 | Valentin Evstafievich Khadzhi | Process for producing amethyst crystals |
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