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GB686907A - Improvements in or relating to crystal triodes - Google Patents

Improvements in or relating to crystal triodes

Info

Publication number
GB686907A
GB686907A GB19942/49A GB1994249A GB686907A GB 686907 A GB686907 A GB 686907A GB 19942/49 A GB19942/49 A GB 19942/49A GB 1994249 A GB1994249 A GB 1994249A GB 686907 A GB686907 A GB 686907A
Authority
GB
United Kingdom
Prior art keywords
semi
electrodes
emitter
conductor
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB19942/49A
Inventor
Charles De Boismaison White
Kenneth Albert Matthews
Evan Harry Rawlinson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL91394D priority Critical patent/NL91394C/xx
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB19942/49A priority patent/GB686907A/en
Publication of GB686907A publication Critical patent/GB686907A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Tubes For Measurement (AREA)
  • Cold Cathode And The Manufacture (AREA)

Abstract

686,907. Semi-conductor amplifiers. STANDARD TELEPHONES & CABLES, Ltd. July 28, 1950 [July 29, 1949], No. 19942/49. Class 40 (iv). [Also in Group II] In a semi-conductor amplifier having two closely spaced electrodes in contact with the semi-conductor surface, one of the electrodes has a contact surface of gold, and the associated region of the semi-conductor also contains gold injected into its surface layer. In Fig. 1, a block of N-type semi-conducting material 1 is supported by a metal base electrode 2, and the surface is in contact with a fine chiselshaped piece of gold wire 4 forming the emit. ter electrode, and a similar shaped piece of phosphor-bronze wire 5 forming the collector electrode. The collector electrode may consist of other suitable soft metal containing a donor type of impurity. Electrodes 4 and 5 may be separated by a thin piece of insulating material such as mica. Alternatively, goldplated tungsten or copper wire could be used for the emitter. An electro-forming treatment may be applied in which a current is passed between the emitter and collector electrodes in such direction as to convey some of the gold from the emitter into the surface of the semi-conductor, and afterwards a current is passed between these electrodes in the direction corresponding to high resistance at the collector electrode. A cathode-ray tube and resistance and switch arrangement in conjunction with a saw-tooth generator as described in Specification 681,809 may be used for applying the electro-forming current and for observing the effect. The emitter and collector electrodes may be on the opposite sides of a thin disc of semi-conductor material The invention enables the collector and emitter electrodes to be spaced two to four hundredths of an inch apart instead of approximately two thousandths as is usual, and also reduces the feed-back from the collector to the emitter electrode. Specifications 665,867 and 694,021 also are referred to.
GB19942/49A 1949-07-29 1949-07-29 Improvements in or relating to crystal triodes Expired GB686907A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
NL91394D NL91394C (en) 1949-07-29
GB19942/49A GB686907A (en) 1949-07-29 1949-07-29 Improvements in or relating to crystal triodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB19942/49A GB686907A (en) 1949-07-29 1949-07-29 Improvements in or relating to crystal triodes

Publications (1)

Publication Number Publication Date
GB686907A true GB686907A (en) 1953-02-04

Family

ID=10137698

Family Applications (1)

Application Number Title Priority Date Filing Date
GB19942/49A Expired GB686907A (en) 1949-07-29 1949-07-29 Improvements in or relating to crystal triodes

Country Status (2)

Country Link
GB (1) GB686907A (en)
NL (1) NL91394C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1060051B (en) * 1955-09-08 1959-06-25 Ibm Deutschland Process for producing the collector tip electrode of a transistor with two upstream zones of opposite conductivity types

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1060051B (en) * 1955-09-08 1959-06-25 Ibm Deutschland Process for producing the collector tip electrode of a transistor with two upstream zones of opposite conductivity types

Also Published As

Publication number Publication date
NL91394C (en)

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