GB2642804A - A structure of an electronic device - Google Patents
A structure of an electronic deviceInfo
- Publication number
- GB2642804A GB2642804A GB2404128.7A GB202404128A GB2642804A GB 2642804 A GB2642804 A GB 2642804A GB 202404128 A GB202404128 A GB 202404128A GB 2642804 A GB2642804 A GB 2642804A
- Authority
- GB
- United Kingdom
- Prior art keywords
- dimensional material
- material layer
- layer structure
- substrate
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
- H10D62/882—Graphene
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Landscapes
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Molecular Biology (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Health & Medical Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Nanotechnology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Laminated Bodies (AREA)
Abstract
A structure (200) for an electronic device, comprising: a patterned two dimensional material layer structure (Figure 1, 210') on a substrate (205); and a patterned dielectric layer (235") having (i) a first portion which is on and/or over the substrate adjacent an edge of the two dimensional material layer structure, and (ii) a second portion which extends from the first portion over the two dimensional material layer structure, and makes resting contact with a surface of the two dimensional material layer structure thereby defining a cavity (245) between at least the dielectric layer and the two dimensional material layer structure; wherein the dielectric layer has a thickness of less than 250 nm. The 2D material 210’ may be a monolayer of graphene, the substrate may be sapphire. Ther device may be a functionalised graphene based electrochemical biosensor.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2404128.7A GB2642804A (en) | 2024-03-22 | 2024-03-22 | A structure of an electronic device |
| PCT/GB2025/050612 WO2025196458A1 (en) | 2024-03-22 | 2025-03-21 | A structure for an electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2404128.7A GB2642804A (en) | 2024-03-22 | 2024-03-22 | A structure of an electronic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB202404128D0 GB202404128D0 (en) | 2024-05-08 |
| GB2642804A true GB2642804A (en) | 2026-01-28 |
Family
ID=90923754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2404128.7A Pending GB2642804A (en) | 2024-03-22 | 2024-03-22 | A structure of an electronic device |
Country Status (2)
| Country | Link |
|---|---|
| GB (1) | GB2642804A (en) |
| WO (1) | WO2025196458A1 (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017029470A1 (en) | 2015-08-14 | 2017-02-23 | Simon Charles Stewart Thomas | A method of producing a two-dimensional material |
| US20170365477A1 (en) | 2016-06-15 | 2017-12-21 | Nanomedical Diagnostics, Inc. | Providing a temporary protective layer on a graphene sheet |
| US20170365474A1 (en) | 2016-06-15 | 2017-12-21 | Nanomedical Diagnostics, Inc. | Depositing a passivation layer on a graphene sheet |
| US20170365562A1 (en) | 2016-06-15 | 2017-12-21 | Nanomedical Diagnostics, Inc. | Patterning graphene with a hard mask coating |
| US20180136266A1 (en) * | 2016-10-19 | 2018-05-17 | Winbond Electronics Corp. | Resistive environmental sensor and resistive environmental sensor array |
| WO2019138231A1 (en) | 2018-01-11 | 2019-07-18 | Paragraf Limited | A method of making graphene layer structures |
| WO2022246261A2 (en) | 2021-05-20 | 2022-11-24 | Cardea Bio, Inc. | Ntegrated circuit with 2d fets for direct and indirect target signal measurement |
| GB2615341A (en) * | 2022-02-04 | 2023-08-09 | Paragraf Ltd | Graphene sensors and a method of manufacture |
| CN116799071A (en) * | 2023-02-22 | 2023-09-22 | 南京大学 | Two-dimensional material device structure with air partition wall and preparation method thereof |
-
2024
- 2024-03-22 GB GB2404128.7A patent/GB2642804A/en active Pending
-
2025
- 2025-03-21 WO PCT/GB2025/050612 patent/WO2025196458A1/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017029470A1 (en) | 2015-08-14 | 2017-02-23 | Simon Charles Stewart Thomas | A method of producing a two-dimensional material |
| US20170365477A1 (en) | 2016-06-15 | 2017-12-21 | Nanomedical Diagnostics, Inc. | Providing a temporary protective layer on a graphene sheet |
| US20170365474A1 (en) | 2016-06-15 | 2017-12-21 | Nanomedical Diagnostics, Inc. | Depositing a passivation layer on a graphene sheet |
| US20170365562A1 (en) | 2016-06-15 | 2017-12-21 | Nanomedical Diagnostics, Inc. | Patterning graphene with a hard mask coating |
| US20180136266A1 (en) * | 2016-10-19 | 2018-05-17 | Winbond Electronics Corp. | Resistive environmental sensor and resistive environmental sensor array |
| WO2019138231A1 (en) | 2018-01-11 | 2019-07-18 | Paragraf Limited | A method of making graphene layer structures |
| WO2022246261A2 (en) | 2021-05-20 | 2022-11-24 | Cardea Bio, Inc. | Ntegrated circuit with 2d fets for direct and indirect target signal measurement |
| GB2615341A (en) * | 2022-02-04 | 2023-08-09 | Paragraf Ltd | Graphene sensors and a method of manufacture |
| WO2023148149A1 (en) | 2022-02-04 | 2023-08-10 | Paragraf Limited | Graphene sensors and a method of manufacture |
| CN116799071A (en) * | 2023-02-22 | 2023-09-22 | 南京大学 | Two-dimensional material device structure with air partition wall and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2025196458A1 (en) | 2025-09-25 |
| GB202404128D0 (en) | 2024-05-08 |
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