GB2528073B - Making diodes - Google Patents
Making diodesInfo
- Publication number
- GB2528073B GB2528073B GB1412145.3A GB201412145A GB2528073B GB 2528073 B GB2528073 B GB 2528073B GB 201412145 A GB201412145 A GB 201412145A GB 2528073 B GB2528073 B GB 2528073B
- Authority
- GB
- United Kingdom
- Prior art keywords
- making diodes
- diodes
- making
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H10P34/40—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/50—Physical imperfections
- H10D62/53—Physical imperfections the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/051—Manufacture or treatment of Schottky diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
-
- H10P30/225—
-
- H10P34/42—
-
- H10P95/405—
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1412145.3A GB2528073B (en) | 2014-07-08 | 2014-07-08 | Making diodes |
| GB1521800.1A GB2532617B (en) | 2014-07-08 | 2014-07-08 | Making diodes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1412145.3A GB2528073B (en) | 2014-07-08 | 2014-07-08 | Making diodes |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB201412145D0 GB201412145D0 (en) | 2014-08-20 |
| GB2528073A GB2528073A (en) | 2016-01-13 |
| GB2528073B true GB2528073B (en) | 2016-08-31 |
Family
ID=51410810
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1412145.3A Active GB2528073B (en) | 2014-07-08 | 2014-07-08 | Making diodes |
| GB1521800.1A Active GB2532617B (en) | 2014-07-08 | 2014-07-08 | Making diodes |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1521800.1A Active GB2532617B (en) | 2014-07-08 | 2014-07-08 | Making diodes |
Country Status (1)
| Country | Link |
|---|---|
| GB (2) | GB2528073B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0432612A2 (en) * | 1989-12-09 | 1991-06-19 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Process for profiling the charge carriers life-time in a semiconductor |
| JPH07226405A (en) * | 1994-12-19 | 1995-08-22 | Meidensha Corp | Method for manufacturing semiconductor device |
| JP2012199577A (en) * | 2012-06-04 | 2012-10-18 | Fuji Electric Co Ltd | Semiconductor device and method of manufacturing the same |
-
2014
- 2014-07-08 GB GB1412145.3A patent/GB2528073B/en active Active
- 2014-07-08 GB GB1521800.1A patent/GB2532617B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0432612A2 (en) * | 1989-12-09 | 1991-06-19 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Process for profiling the charge carriers life-time in a semiconductor |
| JPH07226405A (en) * | 1994-12-19 | 1995-08-22 | Meidensha Corp | Method for manufacturing semiconductor device |
| JP2012199577A (en) * | 2012-06-04 | 2012-10-18 | Fuji Electric Co Ltd | Semiconductor device and method of manufacturing the same |
Non-Patent Citations (1)
| Title |
|---|
| Proceedings of the 20th international Symposium on Power Semiconductor devices & ICs. 18-22 May 2008, Y. Onozawa et al. Development of the 1200V FZ-diode with soft recovery characteristics by the new local lifetime control technique, pages 80-83. * |
Also Published As
| Publication number | Publication date |
|---|---|
| GB201521800D0 (en) | 2016-01-27 |
| GB2532617B (en) | 2016-08-31 |
| GB2532617A (en) | 2016-05-25 |
| GB201412145D0 (en) | 2014-08-20 |
| GB2528073A (en) | 2016-01-13 |
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