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GB2520277B - Controlling the voltage level on the word line to maintain performance and reduce access disturbs - Google Patents

Controlling the voltage level on the word line to maintain performance and reduce access disturbs

Info

Publication number
GB2520277B
GB2520277B GB1320034.0A GB201320034A GB2520277B GB 2520277 B GB2520277 B GB 2520277B GB 201320034 A GB201320034 A GB 201320034A GB 2520277 B GB2520277 B GB 2520277B
Authority
GB
United Kingdom
Prior art keywords
controlling
word line
voltage level
maintain performance
reduce access
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB1320034.0A
Other versions
GB201320034D0 (en
GB2520277A (en
Inventor
Charafeddine Kenza
Hold Betina
Thomas Laplanche Yves
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ARM Ltd
Original Assignee
ARM Ltd
Advanced Risc Machines Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ARM Ltd, Advanced Risc Machines Ltd filed Critical ARM Ltd
Priority to GB1320034.0A priority Critical patent/GB2520277B/en
Publication of GB201320034D0 publication Critical patent/GB201320034D0/en
Publication of GB2520277A publication Critical patent/GB2520277A/en
Application granted granted Critical
Publication of GB2520277B publication Critical patent/GB2520277B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/418—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
GB1320034.0A 2013-11-13 2013-11-13 Controlling the voltage level on the word line to maintain performance and reduce access disturbs Expired - Fee Related GB2520277B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB1320034.0A GB2520277B (en) 2013-11-13 2013-11-13 Controlling the voltage level on the word line to maintain performance and reduce access disturbs

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1320034.0A GB2520277B (en) 2013-11-13 2013-11-13 Controlling the voltage level on the word line to maintain performance and reduce access disturbs

Publications (3)

Publication Number Publication Date
GB201320034D0 GB201320034D0 (en) 2013-12-25
GB2520277A GB2520277A (en) 2015-05-20
GB2520277B true GB2520277B (en) 2016-07-20

Family

ID=49818565

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1320034.0A Expired - Fee Related GB2520277B (en) 2013-11-13 2013-11-13 Controlling the voltage level on the word line to maintain performance and reduce access disturbs

Country Status (1)

Country Link
GB (1) GB2520277B (en)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0023655A2 (en) * 1979-07-26 1981-02-11 Kabushiki Kaisha Toshiba Semiconductor memory device
JPS60226095A (en) * 1984-04-25 1985-11-11 Hitachi Micro Comput Eng Ltd Semiconductor storage device
JPH0457297A (en) * 1990-06-22 1992-02-25 Mitsubishi Electric Corp Semiconductor memory
US20030052725A1 (en) * 2001-09-20 2003-03-20 Yoshihiko Kamata Voltage translator
US20100142253A1 (en) * 2008-12-10 2010-06-10 Akira Katayama Semiconductor memory device
US20110149674A1 (en) * 2009-12-22 2011-06-23 Gus Yeung Integrated circuit memory with word line driving helper circuits
US20120170390A1 (en) * 2011-01-03 2012-07-05 Arm Limited Read stability of a semiconductor memory
US20130128680A1 (en) * 2011-11-17 2013-05-23 Texas Instruments Incorporated Read assist circuit for an sram
US20130272056A1 (en) * 2012-04-13 2013-10-17 Taiwan Semicconductor Manufacturing Company, Ltd. Apparatus for SRAM Cells

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0023655A2 (en) * 1979-07-26 1981-02-11 Kabushiki Kaisha Toshiba Semiconductor memory device
JPS60226095A (en) * 1984-04-25 1985-11-11 Hitachi Micro Comput Eng Ltd Semiconductor storage device
JPH0457297A (en) * 1990-06-22 1992-02-25 Mitsubishi Electric Corp Semiconductor memory
US20030052725A1 (en) * 2001-09-20 2003-03-20 Yoshihiko Kamata Voltage translator
US20100142253A1 (en) * 2008-12-10 2010-06-10 Akira Katayama Semiconductor memory device
US20110149674A1 (en) * 2009-12-22 2011-06-23 Gus Yeung Integrated circuit memory with word line driving helper circuits
US20120170390A1 (en) * 2011-01-03 2012-07-05 Arm Limited Read stability of a semiconductor memory
US20130128680A1 (en) * 2011-11-17 2013-05-23 Texas Instruments Incorporated Read assist circuit for an sram
US20130272056A1 (en) * 2012-04-13 2013-10-17 Taiwan Semicconductor Manufacturing Company, Ltd. Apparatus for SRAM Cells

Also Published As

Publication number Publication date
GB201320034D0 (en) 2013-12-25
GB2520277A (en) 2015-05-20

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20191113