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GB2589092B - III-V / Silicon optoelectronic device and method of manufacture thereof - Google Patents

III-V / Silicon optoelectronic device and method of manufacture thereof Download PDF

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Publication number
GB2589092B
GB2589092B GB1916700.6A GB201916700A GB2589092B GB 2589092 B GB2589092 B GB 2589092B GB 201916700 A GB201916700 A GB 201916700A GB 2589092 B GB2589092 B GB 2589092B
Authority
GB
United Kingdom
Prior art keywords
iii
manufacture
optoelectronic device
silicon optoelectronic
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB1916700.6A
Other versions
GB2589092A (en
GB201916700D0 (en
Inventor
Yu Guomin
Zilkie Aaron-John
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rockley Photonics Ltd
Original Assignee
Rockley Photonics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to GB2118589.7A priority Critical patent/GB2600569B/en
Application filed by Rockley Photonics Ltd filed Critical Rockley Photonics Ltd
Priority to GB1916700.6A priority patent/GB2589092B/en
Publication of GB201916700D0 publication Critical patent/GB201916700D0/en
Priority to PCT/EP2020/081949 priority patent/WO2021094473A1/en
Priority to US17/439,297 priority patent/US12174424B2/en
Priority to EP20807013.6A priority patent/EP4058841A1/en
Priority to CN202080093096.4A priority patent/CN114981714A/en
Publication of GB2589092A publication Critical patent/GB2589092A/en
Application granted granted Critical
Publication of GB2589092B publication Critical patent/GB2589092B/en
Priority to US17/748,639 priority patent/US20220276438A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/124—Geodesic lenses or integrated gratings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4251—Sealed packages
    • G02B6/4253—Sealed packages by embedding housing components in an adhesive or a polymer material
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/12061—Silicon
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1223—Basic optical elements, e.g. light-guiding paths high refractive index type, i.e. high-contrast waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optical Integrated Circuits (AREA)
GB1916700.6A 2019-11-15 2019-11-15 III-V / Silicon optoelectronic device and method of manufacture thereof Active GB2589092B (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GB1916700.6A GB2589092B (en) 2019-11-15 2019-11-15 III-V / Silicon optoelectronic device and method of manufacture thereof
GB2118589.7A GB2600569B (en) 2019-11-15 2019-11-15 Device Coupon and Method of Manufacture thereof
PCT/EP2020/081949 WO2021094473A1 (en) 2019-11-15 2020-11-12 Optoelectronic device and method of manufacture thereof
US17/439,297 US12174424B2 (en) 2019-11-15 2020-11-12 Optoelectronic device and method of manufacture thereof
EP20807013.6A EP4058841A1 (en) 2019-11-15 2020-11-12 Optoelectronic device and method of manufacture thereof
CN202080093096.4A CN114981714A (en) 2019-11-15 2020-11-12 Optoelectronic device and method of making the same
US17/748,639 US20220276438A1 (en) 2019-11-15 2022-05-19 Optoelectronic device and method of manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1916700.6A GB2589092B (en) 2019-11-15 2019-11-15 III-V / Silicon optoelectronic device and method of manufacture thereof

Publications (3)

Publication Number Publication Date
GB201916700D0 GB201916700D0 (en) 2020-01-01
GB2589092A GB2589092A (en) 2021-05-26
GB2589092B true GB2589092B (en) 2022-02-16

Family

ID=69063321

Family Applications (2)

Application Number Title Priority Date Filing Date
GB1916700.6A Active GB2589092B (en) 2019-11-15 2019-11-15 III-V / Silicon optoelectronic device and method of manufacture thereof
GB2118589.7A Active GB2600569B (en) 2019-11-15 2019-11-15 Device Coupon and Method of Manufacture thereof

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB2118589.7A Active GB2600569B (en) 2019-11-15 2019-11-15 Device Coupon and Method of Manufacture thereof

Country Status (2)

Country Link
GB (2) GB2589092B (en)
WO (1) WO2021094473A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12174424B2 (en) 2019-11-15 2024-12-24 Chamartin Laboratories Llc Optoelectronic device and method of manufacture thereof
JP2023505865A (en) 2019-12-11 2023-02-13 ロックリー フォトニクス リミテッド light detection module
GB2601842B (en) * 2020-06-09 2023-01-18 Rockley Photonics Ltd Optoelectronic device and method of manufacture thereof
US12189181B2 (en) 2021-09-22 2025-01-07 Rockley Photonics Limited Optoelectronic device
WO2023046762A1 (en) 2021-09-22 2023-03-30 Rockley Photonics Limited Optoelectronic device
US12390117B2 (en) 2021-11-16 2025-08-19 Rockley Photonics Limited Optical sensor module for speckleplethysmography (SPG) and photoplethysmography (PPG)
EP4311042B1 (en) * 2022-07-21 2025-10-15 Nokia Solutions and Networks Oy Opto-electronic device
US12396648B1 (en) 2024-11-27 2025-08-26 Rockley Photonics Limited Wearable device with light source and optical sensor
US12484796B1 (en) 2024-11-27 2025-12-02 Rockley Photonics Limited System and method for measuring pulse wave velocity

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0774396A (en) * 1993-06-30 1995-03-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor optical device
US20120001210A1 (en) * 2010-06-30 2012-01-05 Seiko Epson Corporation Light-emitting device and projector
US20120168816A1 (en) * 2009-06-26 2012-07-05 University Of Surrey Light emitting semiconductor device
US20140204352A1 (en) * 2013-01-21 2014-07-24 Seiko Epson Corporation Light emitting device, super luminescent diode, and projector
US20140319656A1 (en) * 2013-04-25 2014-10-30 Skorpios Technologies, Inc. Method and system for height registration during chip bonding
US20150097210A1 (en) * 2013-10-09 2015-04-09 Skorpios Technologies, Inc. Coplanar integration of a direct-bandgap chip into a silicon photonic device
WO2017139350A1 (en) * 2016-02-08 2017-08-17 Skorpios Technologies, Inc Stepped optical bridge for connecting semiconductor waveguides
WO2017197132A1 (en) * 2016-05-11 2017-11-16 Skorpios Technologies, Inc. Iii-v chip preparation and integration in silicon photonics

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2586889B (en) * 2019-08-26 2022-11-02 Rockley Photonics Ltd Method of manufacturing a III-V based optoelectronic device
GB2589335B (en) * 2019-11-26 2022-12-14 Rockley Photonics Ltd Integrated III-V/silicon optoelectronic device and method of manufacture thereof

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0774396A (en) * 1993-06-30 1995-03-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor optical device
US20120168816A1 (en) * 2009-06-26 2012-07-05 University Of Surrey Light emitting semiconductor device
US20120001210A1 (en) * 2010-06-30 2012-01-05 Seiko Epson Corporation Light-emitting device and projector
US20140204352A1 (en) * 2013-01-21 2014-07-24 Seiko Epson Corporation Light emitting device, super luminescent diode, and projector
US20140319656A1 (en) * 2013-04-25 2014-10-30 Skorpios Technologies, Inc. Method and system for height registration during chip bonding
US20150097210A1 (en) * 2013-10-09 2015-04-09 Skorpios Technologies, Inc. Coplanar integration of a direct-bandgap chip into a silicon photonic device
WO2017139350A1 (en) * 2016-02-08 2017-08-17 Skorpios Technologies, Inc Stepped optical bridge for connecting semiconductor waveguides
WO2017197132A1 (en) * 2016-05-11 2017-11-16 Skorpios Technologies, Inc. Iii-v chip preparation and integration in silicon photonics

Also Published As

Publication number Publication date
GB2600569A (en) 2022-05-04
GB2589092A (en) 2021-05-26
GB201916700D0 (en) 2020-01-01
GB2600569B (en) 2022-12-14
WO2021094473A1 (en) 2021-05-20

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