[go: up one dir, main page]

GB2587940A - Inline chamber metrology - Google Patents

Inline chamber metrology Download PDF

Info

Publication number
GB2587940A
GB2587940A GB2017339.9A GB202017339A GB2587940A GB 2587940 A GB2587940 A GB 2587940A GB 202017339 A GB202017339 A GB 202017339A GB 2587940 A GB2587940 A GB 2587940A
Authority
GB
United Kingdom
Prior art keywords
substrate
operable
pulse
wavelength
electromagnetic radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB2017339.9A
Other versions
GB2587940A8 (en
GB2587940B (en
GB202017339D0 (en
Inventor
Ghosh Avishek
Southalia Goradia Prerna
Jan Visser Robert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of GB202017339D0 publication Critical patent/GB202017339D0/en
Publication of GB2587940A publication Critical patent/GB2587940A/en
Publication of GB2587940A8 publication Critical patent/GB2587940A8/en
Application granted granted Critical
Publication of GB2587940B publication Critical patent/GB2587940B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/636—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited using an arrangement of pump beam and probe beam; using the measurement of optical non-linear properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
    • H10P72/0436—
    • H10P72/0454—
    • H10P72/0604—
    • H10P72/3302—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Automation & Control Theory (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Glass Compositions (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

Embodiments of the present disclosure relate to inspection of substrates undergoing vacuum processing. In one embodiment, a processing chamber includes a first view port to enable an emitter of electromagnetic radiation to illuminate a substrate in the processing chamber, a second view port to enable a detector to detect electromagnetic radiation scattered from the substrate, the electromagnetic radiation emitter, and the detector.

Claims (15)

What is claimed is:
1. An apparatus for processing a substrate, comprising: a processing chamber body having a first view port and a second view port; a substrate support within the processing chamber body; an electromagnetic radiation emitter operable to illuminate, through the first view port, the substrate on the substrate support; and a detector operable to detect electromagnetic radiation scattered from the substrate through the second view port.
2. The apparatus of claim 1 , wherein the substrate support is operable to move the substrate to cause a beam from the electromagnetic radiation emitter to be scanned over a surface of the substrate.
3. The apparatus of claim 1 , further comprising: a galvano mirror operable to direct a beam from the electromagnetic radiation emitter onto a surface of the substrate.
4. The apparatus of claim 1 , wherein the electromagnetic radiation emitter comprises a first laser source operable to generate a first pulse of laser light having a first wavelength and a second laser source operable to generate a second pulse of laser light having a second wavelength.
5. The apparatus of claim 4, wherein: the first wavelength is between 1 micrometer and 4 micrometers, inclusive; and the second wavelength is between 750 nanometers and 850 nanometers, inclusive.
6. The apparatus of claim 4, wherein the detector is operable to measure an intensity of a sum frequency generation (SFG) pulse caused by an interaction between the first pulse, the second pulse, and the substrate.
7. A system for processing a substrate, comprising: a processing chamber having a first slit valve opening configured to permit passage of the substrate therethrough and a second slit valve opening configured to permit passage of the substrate therethrough; a first slit valve operable to open and close the first slit valve opening of the processing chamber, wherein the first slit valve is operable to make a first air-tight seal when closed; a second slit valve operable to open and close the second slit valve opening of the processing chamber, wherein the second slit valve is operable to make a second air-tight seal when closed; a load-lock having a transfer slit valve opening aligned with the second slit valve opening of the processing chamber, a load-lock port, and a substrate support; and a mechanical arm having an encased probe, wherein: the mechanical arm is operable to access an interior of the load-lock via the load-lock port; the mechanical arm is operable to move an instrument within the encased probe into proximity with the substrate on the substrate support; the encased probe has an emitter operable to emit electromagnetic radiation to illuminate the substrate; and the encased probe has a detector operable to detect electromagnetic radiation scattered from the substrate.
8. The system of claim 7, further comprising a substrate handling robot having a substrate handling blade, wherein: the mechanical arm is connected with the substrate handling robot; and the mechanical arm is operable to move the instrument within the encased probe into proximity with the substrate on the substrate handling blade.
9. The system of claim 7, wherein the emitter comprises a first laser source operable to generate a first pulse of laser light having a first wavelength and a second laser source operable to generate a second pulse of laser light having a second wavelength.
10. The system of claim 9, wherein: the first wavelength is between 1 micrometer and 4 micrometers, inclusive; and the second wavelength is between 750 nanometers and 850 nanometers, inclusive.
11. The system of claim 9, wherein the detector is operable to measure an intensity of a sum frequency generation (SFG) pulse caused by an interaction between the first pulse, the second pulse, and the substrate on the substrate support.
12. An apparatus for measuring a substrate in a processing system, comprising: a mechanical arm operable to access an interior of a load-lock of the processing system; an encased probe on the mechanical arm; an emitter within the encased probe and operable to emit electromagnetic radiation to illuminate the substrate; and a detector within the encased probe and operable to detect electromagnetic radiation scattered from the substrate, wherein the mechanical arm is operable to move at least one of the emitter or the detector into proximity with the substrate.
13. The apparatus of claim 12, wherein the emitter comprises a first laser source operable to generate a first pulse of laser light having a first wavelength and a second laser source operable to generate a second pulse of laser light having a second wavelength.
14. The apparatus of claim 13, wherein: the first wavelength is between 1 micrometer and 4 micrometers, inclusive; and the second wavelength is between 750 nanometers and 850 nanometers, inclusive.
15. The apparatus of claim 13, wherein the detector is operable to measure an intensity of a sum frequency generation (SFG) pulse caused by an interaction between the first pulse, the second pulse, and the substrate.
GB2017339.9A 2018-04-02 2019-03-29 Inline chamber metrology Active GB2587940B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IN201841012373 2018-04-02
US201962811202P 2019-02-27 2019-02-27
PCT/US2019/024823 WO2019195100A1 (en) 2018-04-02 2019-03-29 Inline chamber metrology

Publications (4)

Publication Number Publication Date
GB202017339D0 GB202017339D0 (en) 2020-12-16
GB2587940A true GB2587940A (en) 2021-04-14
GB2587940A8 GB2587940A8 (en) 2023-04-26
GB2587940B GB2587940B (en) 2023-06-14

Family

ID=68100175

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2017339.9A Active GB2587940B (en) 2018-04-02 2019-03-29 Inline chamber metrology

Country Status (7)

Country Link
JP (2) JP7097458B2 (en)
KR (3) KR20220140045A (en)
CN (1) CN112041977B (en)
DE (1) DE112019001752T5 (en)
GB (1) GB2587940B (en)
TW (2) TWI751412B (en)
WO (1) WO2019195100A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12209909B2 (en) * 2019-06-03 2025-01-28 The General Hospital Corporation Systems and methods for stimulated Brillouin microscopy
CN113588682B (en) * 2021-07-20 2024-07-05 浙江大学 A large-scale, high-precision, and fast defect detection system for 3D parts
CN115602565B (en) * 2022-11-03 2023-06-23 江苏中芯沃达半导体科技有限公司 A semiconductor in-situ high-resolution visual on-line monitoring device
KR102834104B1 (en) * 2023-01-11 2025-07-14 성균관대학교산학협력단 Monitoring device for change of plasma process uniformity, and monitoring method for change of plasma process uniformity using the same
US12480884B2 (en) * 2023-01-17 2025-11-25 Tokyo Electron Limited Analysis apparatus, bonding system, and analysis method
US20240248282A1 (en) * 2023-01-25 2024-07-25 Applied Materials, Inc. Apparatus and methods for heating tunability in processing chambers
KR102691049B1 (en) 2023-08-21 2024-08-05 (주) 오로스테크놀로지 Measure device using light and method using them

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5698989A (en) * 1994-10-06 1997-12-16 Applied Materilas, Inc. Film sheet resistance measurement
US5922179A (en) * 1996-12-20 1999-07-13 Gatan, Inc. Apparatus for etching and coating sample specimens for microscopic analysis
JP2004087342A (en) * 2002-08-28 2004-03-18 Jeol Ltd Observation device using charged particle beam
US20160024645A1 (en) * 2014-07-28 2016-01-28 Gatan, Inc. Ion Beam Sample Preparation and Coating Apparatus and Methods
US20170271181A1 (en) * 2015-03-19 2017-09-21 Applied Materials, Inc. Method and apparatus for reducing radiation induced change in semiconductor structures

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4652757A (en) * 1985-08-02 1987-03-24 At&T Technologies, Inc. Method and apparatus for optically determining defects in a semiconductor material
JPH0816607B2 (en) * 1990-10-30 1996-02-21 インターナショナル・ビジネス・マシーンズ・コーポレイション Thin film processing control method
JP2916321B2 (en) * 1992-03-19 1999-07-05 三井金属鉱業株式会社 Method for detecting internal defects in multilayer semiconductor substrate, etc.
JPH05315266A (en) * 1992-05-12 1993-11-26 Nec Yamagata Ltd Cvd growing apparatus
KR970053234A (en) * 1995-12-20 1997-07-31 양승택 How to detect doping characteristics of compound semiconductor in real time
JPH09306849A (en) * 1996-05-17 1997-11-28 Furukawa Electric Co Ltd:The Vapor phase growth equipment
JPH1019790A (en) * 1996-07-02 1998-01-23 Hitachi Ltd Vacuum substrate inspection system
KR100206940B1 (en) * 1996-09-21 1999-07-01 구본준 Sample Gas Leakage Inspection System for Semiconductor Wafer Component Inspection Equipment
US20040035529A1 (en) * 1999-08-24 2004-02-26 Michael N. Grimbergen Monitoring a process and compensating for radiation source fluctuations
JP4067307B2 (en) * 2000-04-27 2008-03-26 株式会社荏原製作所 Rotation holding device
JP2004521323A (en) 2001-03-27 2004-07-15 サラフスカイ，ジョシュア，エス． Method and apparatus for detecting probe-target interactions using surface selective nonlinear optical techniques
JP4955863B2 (en) * 2001-05-22 2012-06-20 財団法人神奈川科学技術アカデミー Sum frequency generation spectroscopic apparatus and method
AU2003220019A1 (en) * 2002-03-20 2003-10-08 Tokyo Electron Limited Process monitoring using infrared optical diagnostics
JP3885007B2 (en) 2002-07-31 2007-02-21 株式会社日立製作所 Semiconductor manufacturing method, plasma processing method and apparatus
KR20060035071A (en) * 2004-10-21 2006-04-26 삼성전자주식회사 Semiconductor Substrate Transfer Robot
JP2007033743A (en) 2005-07-26 2007-02-08 Seiko Epson Corp Substrates for electronic devices, liquid crystal panels, and electronic equipment
DE102006009460A1 (en) * 2006-03-01 2007-09-06 Infineon Technologies Ag Process device used in production of integrated circuits comprises process chamber, holder within chamber for holding substrate, radiation source, radiation detector and control and evaluation unit
WO2009099776A1 (en) 2008-01-31 2009-08-13 Applied Materials, Inc. Closed loop mocvd deposition control
JP2012103071A (en) 2010-11-09 2012-05-31 Nagoya Univ Evaluation method and evaluation device of organic ferroelectric material and method for manufacturing electronic device
WO2013085687A1 (en) * 2011-12-07 2013-06-13 Applied Materials, Inc. Laser reflectometry for substrate processing
KR102609862B1 (en) * 2014-04-17 2023-12-04 펨토매트릭스, 인코포레이티드. Wafer metrology technologies

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5698989A (en) * 1994-10-06 1997-12-16 Applied Materilas, Inc. Film sheet resistance measurement
US5922179A (en) * 1996-12-20 1999-07-13 Gatan, Inc. Apparatus for etching and coating sample specimens for microscopic analysis
JP2004087342A (en) * 2002-08-28 2004-03-18 Jeol Ltd Observation device using charged particle beam
US20160024645A1 (en) * 2014-07-28 2016-01-28 Gatan, Inc. Ion Beam Sample Preparation and Coating Apparatus and Methods
US20170271181A1 (en) * 2015-03-19 2017-09-21 Applied Materials, Inc. Method and apparatus for reducing radiation induced change in semiconductor structures

Also Published As

Publication number Publication date
TW201945724A (en) 2019-12-01
JP7498225B2 (en) 2024-06-11
JP2021519522A (en) 2021-08-10
KR20220140045A (en) 2022-10-17
WO2019195100A1 (en) 2019-10-10
GB2587940A8 (en) 2023-04-26
CN112041977B (en) 2024-08-13
KR20240129086A (en) 2024-08-27
JP7097458B2 (en) 2022-07-07
GB2587940B (en) 2023-06-14
GB202017339D0 (en) 2020-12-16
TWI775689B (en) 2022-08-21
KR20200128192A (en) 2020-11-11
TWI751412B (en) 2022-01-01
JP2022160395A (en) 2022-10-19
KR102454199B1 (en) 2022-10-14
TW202212815A (en) 2022-04-01
DE112019001752T5 (en) 2020-12-24
CN112041977A (en) 2020-12-04

Similar Documents

Publication Publication Date Title
GB2587940A (en) Inline chamber metrology
TWI515820B (en) A substrate stage and a substrate processing device
US10746531B2 (en) Wear amount measuring apparatus and method, temperature measuring apparatus and method and substrate processing system
JP6288951B2 (en) Inspection system using scanning electron microscope
TWI497030B (en) Consumption method
KR960006194B1 (en) Semiconductor substrate evaluation method and apparatus
TW201842301A (en) Position detection system and processing device
JP6018645B2 (en) measuring device
TW201538923A (en) Thickness ‧ temperature measuring device, thickness ‧ temperature measuring method and substrate processing system
US20160203944A1 (en) Charged Particle Beam Apparatus and Sample Image Acquiring Method
KR960705246A (en) Near-field optical microscope and its measurement method (NEAR-FIELD OPTICAL MICROSCOPE)
CN116577317A (en) Combined detection device and combined detection method for Raman-laser ablation-mass spectrum
US8310667B2 (en) Wafer surface inspection apparatus and wafer surface inspection method
US10094787B2 (en) Multi-surface specular reflection inspector
JP2017525945A (en) Arrangement for measuring properties and / or parameters of a sample and / or at least one film formed on the sample surface
KR102457640B1 (en) Apparatus and related egg identification apparatus and method for identifying badges
TWD226028S (en) Semiconductor probe pin
US12399318B2 (en) Micro-nano structure sensitive to laser beam in specific direction
KR102632283B1 (en) charged particle beam device
Walecki et al. Novel noncontact thickness metrology for backend manufacturing of wide bandgap light emitting devices
WO2024129518A3 (en) Methods and systems for scatterometry based metrology of structures fabricated on transparent substrates
Walecki et al. Novel low coherence metrology for nondestructive characterization of high aspect ratio micro-fabricated and micro-machined structures
KR102534667B1 (en) Device for in-chamber type thin film analysis
JP2008537781A5 (en)
JP2008537781A (en) Dual photoacoustic and resistance measurement system

Legal Events

Date Code Title Description
R108 Alteration of time limits (patents rules 1995)

Free format text: EXTENSION ALLOWED

Effective date: 20230316

Free format text: EXTENSION APPLICATION

Effective date: 20230314