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GB2586262B - Photodetector - Google Patents

Photodetector Download PDF

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Publication number
GB2586262B
GB2586262B GB1911691.2A GB201911691A GB2586262B GB 2586262 B GB2586262 B GB 2586262B GB 201911691 A GB201911691 A GB 201911691A GB 2586262 B GB2586262 B GB 2586262B
Authority
GB
United Kingdom
Prior art keywords
photodetector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB1911691.2A
Other versions
GB2586262A (en
GB201911691D0 (en
Inventor
Lin Ching-Fuh
Chuang Hung-Chieh
Lin Meng-Jie
Huang Po-Jui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Taiwan University NTU
Original Assignee
National Taiwan University NTU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Taiwan University NTU filed Critical National Taiwan University NTU
Priority to GB1911691.2A priority Critical patent/GB2586262B/en
Publication of GB201911691D0 publication Critical patent/GB201911691D0/en
Publication of GB2586262A publication Critical patent/GB2586262A/en
Application granted granted Critical
Publication of GB2586262B publication Critical patent/GB2586262B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/18Photovoltaic cells having only Schottky potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/121The active layers comprising only Group IV materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/14Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/14Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147Shapes of bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/206Electrodes for devices having potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/70Surface textures, e.g. pyramid structures
    • H10F77/703Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
GB1911691.2A 2019-08-15 2019-08-15 Photodetector Active GB2586262B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB1911691.2A GB2586262B (en) 2019-08-15 2019-08-15 Photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1911691.2A GB2586262B (en) 2019-08-15 2019-08-15 Photodetector

Publications (3)

Publication Number Publication Date
GB201911691D0 GB201911691D0 (en) 2019-10-02
GB2586262A GB2586262A (en) 2021-02-17
GB2586262B true GB2586262B (en) 2021-12-15

Family

ID=68099462

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1911691.2A Active GB2586262B (en) 2019-08-15 2019-08-15 Photodetector

Country Status (1)

Country Link
GB (1) GB2586262B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111947792B (en) * 2020-08-26 2022-10-11 合肥工业大学 Color detection system based on palladium diselenide/ultrathin silicon/palladium diselenide Schottky junction and preparation method thereof
CN114784125B (en) * 2022-03-25 2024-04-02 国科大杭州高等研究院 An asymmetry-induced room temperature highly sensitive photodetector device and its preparation method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110131588A (en) * 2010-05-31 2011-12-07 한양대학교 산학협력단 Schottky solar cell and manufacturing method thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110131588A (en) * 2010-05-31 2011-12-07 한양대학교 산학협력단 Schottky solar cell and manufacturing method thereof

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Abdullah, M. F. et al.; MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING; 2019; vol. 96; pages 137-144. *
Dai, X. M. et al.; PROCEEDINGS OF THE PHOTOVOLTAIC SPECIALISTS CONFERENCE. LOUISVILLE, MAY 10 - 14, 1993; vol. 23; pages 153-156. *
Desiatov, B. et al.; 2013 Conference on Lasers and Electro-Optics (CLEO) - Laser Science to Photonic Applications; pages 1 & 2. *
Desiatov, B. et al.; 2014 Conference on Lasers and Electro-Optics (CLEO) - Laser Science to Photonic Applications; pages 1 & 2. *

Also Published As

Publication number Publication date
GB2586262A (en) 2021-02-17
GB201911691D0 (en) 2019-10-02

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