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GB2567910B - Semiconductor device - Google Patents

Semiconductor device Download PDF

Info

Publication number
GB2567910B
GB2567910B GB1806657.1A GB201806657A GB2567910B GB 2567910 B GB2567910 B GB 2567910B GB 201806657 A GB201806657 A GB 201806657A GB 2567910 B GB2567910 B GB 2567910B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB1806657.1A
Other versions
GB201806657D0 (en
GB2567910A (en
Inventor
Masunaga Masahiro
Sato Shintaroh
Shima Akio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB201806657D0 publication Critical patent/GB201806657D0/en
Publication of GB2567910A publication Critical patent/GB2567910A/en
Application granted granted Critical
Publication of GB2567910B publication Critical patent/GB2567910B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/025—Manufacture or treatment of resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H10P10/00—
    • H10P14/2904—
    • H10P14/3408—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
  • Bipolar Integrated Circuits (AREA)
GB1806657.1A 2017-10-30 2018-04-24 Semiconductor device Expired - Fee Related GB2567910B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017209234A JP6836982B2 (en) 2017-10-30 2017-10-30 Semiconductor device

Publications (3)

Publication Number Publication Date
GB201806657D0 GB201806657D0 (en) 2018-06-06
GB2567910A GB2567910A (en) 2019-05-01
GB2567910B true GB2567910B (en) 2020-05-13

Family

ID=62236207

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1806657.1A Expired - Fee Related GB2567910B (en) 2017-10-30 2018-04-24 Semiconductor device

Country Status (2)

Country Link
JP (1) JP6836982B2 (en)
GB (1) GB2567910B (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1215434A (en) * 1984-01-09 1986-12-16 James A. Mckenzie Bias current reference circuit having a substantially zero temperature coefficient
JPH0212509A (en) * 1988-06-30 1990-01-17 Nec Corp Constant voltage circuit
JP3244057B2 (en) * 1998-07-16 2002-01-07 日本電気株式会社 Reference voltage source circuit
DE10394372B4 (en) * 2002-06-28 2011-07-28 National Institute Of Advanced Industrial Science And Technology Method for producing a semiconductor device
DE102016104256B3 (en) * 2016-03-09 2017-07-06 Infineon Technologies Ag Wide band gap semiconductor device having transistor cells and compensation structure

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Banu et al, 'Demonstration of temperature compensated voltage reference integrated circuit designed with 4H-SiC MESFETs' , IEEE 2014 International Semiconductor Conference (CAS), 13-15 Oct. 2014, Pg 233-236, ISBN 978-1-4799-3917-6 *
Lazar M et al, 'Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices' , IEEE 2015 International Semiconductor Conference (CAS), 12-14 Oct, 2015, Pages 145-148: ISBN 978-1-4799-8862-4 *
Rahman et al, 'High-temperature voltage and current references in silicon carbide CMOS' , IEEE Transactions on Electron Devices, June 2016, USA, Vol 63, Nr 3 pages 2455-2461, ISSN 0018-9383 *

Also Published As

Publication number Publication date
GB201806657D0 (en) 2018-06-06
JP2019083247A (en) 2019-05-30
GB2567910A (en) 2019-05-01
JP6836982B2 (en) 2021-03-03

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20250424