[go: up one dir, main page]

GB2564620B - Selective epitaxially grown III-V materials based devices - Google Patents

Selective epitaxially grown III-V materials based devices

Info

Publication number
GB2564620B
GB2564620B GB1817284.1A GB201817284A GB2564620B GB 2564620 B GB2564620 B GB 2564620B GB 201817284 A GB201817284 A GB 201817284A GB 2564620 B GB2564620 B GB 2564620B
Authority
GB
United Kingdom
Prior art keywords
epitaxially grown
based devices
materials based
grown iii
selective epitaxially
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB1817284.1A
Other versions
GB201817284D0 (en
GB2564620A (en
Inventor
Goel Niti
Dewey Gilbert
V Metz Matthew
Mukherjee Niloy
Radosavljevic Marko
Chu-Kung Benjamin
T Kavalieros Jack
Chau Robert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Priority to GB1817284.1A priority Critical patent/GB2564620B/en
Priority claimed from GB1520312.8A external-priority patent/GB2530195B/en
Publication of GB201817284D0 publication Critical patent/GB201817284D0/en
Publication of GB2564620A publication Critical patent/GB2564620A/en
Application granted granted Critical
Publication of GB2564620B publication Critical patent/GB2564620B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/014—Manufacture or treatment of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 1D charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H10P14/2905—
    • H10P14/3218—
    • H10P14/3221—
    • H10P14/3222—
    • H10P14/3248—
    • H10P14/3421—
    • H10P14/3422—
GB1817284.1A 2013-06-28 2013-06-28 Selective epitaxially grown III-V materials based devices Active GB2564620B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB1817284.1A GB2564620B (en) 2013-06-28 2013-06-28 Selective epitaxially grown III-V materials based devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1817284.1A GB2564620B (en) 2013-06-28 2013-06-28 Selective epitaxially grown III-V materials based devices
GB1520312.8A GB2530195B (en) 2013-06-28 2013-06-28 Selective epitaxially grown III-V materials based devices

Publications (3)

Publication Number Publication Date
GB201817284D0 GB201817284D0 (en) 2018-12-05
GB2564620A GB2564620A (en) 2019-01-16
GB2564620B true GB2564620B (en) 2019-05-01

Family

ID=64453935

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1817284.1A Active GB2564620B (en) 2013-06-28 2013-06-28 Selective epitaxially grown III-V materials based devices

Country Status (1)

Country Link
GB (1) GB2564620B (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103065973A (en) * 2013-01-22 2013-04-24 中国科学院半导体研究所 Method preparing indium phosphide (InP) base n-metal oxide semiconductor (n-MOS) device based on silicon (Si) base

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103065973A (en) * 2013-01-22 2013-04-24 中国科学院半导体研究所 Method preparing indium phosphide (InP) base n-metal oxide semiconductor (n-MOS) device based on silicon (Si) base

Also Published As

Publication number Publication date
GB201817284D0 (en) 2018-12-05
GB2564620A (en) 2019-01-16

Similar Documents

Publication Publication Date Title
GB2530195B (en) Selective epitaxially grown III-V materials based devices
SG11201606451QA (en) Selective epitaxially grown iii-v materials based devices
ZA201600664B (en) Harq feedback using carrier aggregation
GB2516958B (en) Growing system
EP2967232A4 (en) Driven infant seat
GB2530194B (en) Integrating VLSI-compatible fin structures with selective epitaxial growth and fabricating devices thereon
SG11201601151PA (en) Antibodies
GB201308658D0 (en) Antibodies
GB201315486D0 (en) Antibodies
GB2549232B (en) Vibrating seat
EP2969413A4 (en) Lattice cutting machine system
GB2513940B (en) Knife
GB201318420D0 (en) Crack-free gallium nitride materials
GB201312226D0 (en) Improved antibodies
TWI561461B (en) Epitaxial structure
EP2969331A4 (en) Integral cutting system
SG10201405334TA (en) Epitaxial Growth Of Compound Semiconductors Using Lattice-Tuned Domain-Matching Epitaxy
GB2518246B (en) Greenhouse
TWM475804U (en) Mushroom cultivation bag
PL3065533T3 (en) Pulling member for pruning tool
GB2564620B (en) Selective epitaxially grown III-V materials based devices
GB201306298D0 (en) Windbreak hooks device
ZA201405667B (en) Growing apparatus
GB201316807D0 (en) Grow Bag System
GB201307979D0 (en) Membrane additive