[go: up one dir, main page]

GB2561391B - Silicon carbide transistor with UV Sensitivity - Google Patents

Silicon carbide transistor with UV Sensitivity Download PDF

Info

Publication number
GB2561391B
GB2561391B GB1705989.0A GB201705989A GB2561391B GB 2561391 B GB2561391 B GB 2561391B GB 201705989 A GB201705989 A GB 201705989A GB 2561391 B GB2561391 B GB 2561391B
Authority
GB
United Kingdom
Prior art keywords
sensitivity
silicon carbide
carbide transistor
transistor
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB1705989.0A
Other versions
GB2561391A (en
GB201705989D0 (en
Inventor
Francis Matt
Holmes Jim
Trann Clark David
Andrew Ross Young Robert
Philip Ramsay Ewan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Systems Ltd
Ozark Integrated Circuits Inc
Original Assignee
Raytheon Systems Ltd
Ozark Integrated Circuits Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Systems Ltd, Ozark Integrated Circuits Inc filed Critical Raytheon Systems Ltd
Priority to GB1705989.0A priority Critical patent/GB2561391B/en
Publication of GB201705989D0 publication Critical patent/GB201705989D0/en
Publication of GB2561391A publication Critical patent/GB2561391A/en
Application granted granted Critical
Publication of GB2561391B publication Critical patent/GB2561391B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • H10F30/245—Bipolar phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/061—Manufacture or treatment of lateral BJTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/197—Bipolar transistor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10P30/2042—
    • H10P30/21—
GB1705989.0A 2017-04-13 2017-04-13 Silicon carbide transistor with UV Sensitivity Active GB2561391B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB1705989.0A GB2561391B (en) 2017-04-13 2017-04-13 Silicon carbide transistor with UV Sensitivity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1705989.0A GB2561391B (en) 2017-04-13 2017-04-13 Silicon carbide transistor with UV Sensitivity

Publications (3)

Publication Number Publication Date
GB201705989D0 GB201705989D0 (en) 2017-05-31
GB2561391A GB2561391A (en) 2018-10-17
GB2561391B true GB2561391B (en) 2020-03-11

Family

ID=58744385

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1705989.0A Active GB2561391B (en) 2017-04-13 2017-04-13 Silicon carbide transistor with UV Sensitivity

Country Status (1)

Country Link
GB (1) GB2561391B (en)

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3504181A (en) * 1966-10-06 1970-03-31 Westinghouse Electric Corp Silicon carbide solid state ultraviolet radiation detector
EP0405045A1 (en) * 1989-06-28 1991-01-02 STMicroelectronics S.r.l. A mixed technology integrated circuit comprising CMOS structures and efficient lateral bipolar transistors with a high early voltage and fabrication thereof
US5093576A (en) * 1991-03-15 1992-03-03 Cree Research High sensitivity ultraviolet radiation detector
EP1253645A2 (en) * 2001-04-25 2002-10-30 Sanken Electric Co., Ltd. Lateral transistor having graded base region, semiconductor intergrated circuit and fabrication method thereof
US20030087466A1 (en) * 2001-11-06 2003-05-08 Yuqi Wang Phototransistor device
US6703647B1 (en) * 2002-04-22 2004-03-09 The United States Of America As Represented By The Secretary Of The Navy Triple base bipolar phototransistor
US20060261876A1 (en) * 2005-05-13 2006-11-23 Cree, Inc. Optically triggered wide bandgap bipolar power switching devices and circuits
US20130187256A1 (en) * 2012-01-23 2013-07-25 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US20140028387A1 (en) * 2012-07-25 2014-01-30 Jeffrey H. Saunders Monolithic integrated circuit chip integrating multiple devices
US20140084301A1 (en) * 2012-09-24 2014-03-27 International Business Machines Corporation Lateral silicon-on-insulator bipolar junction transistor radiation dosimeter
US20150349186A1 (en) * 2014-05-30 2015-12-03 Wispro Technology Consulting Corporation Limited Phototransistor with body-strapped base
US9318585B1 (en) * 2015-05-12 2016-04-19 International Business Machines Corporation Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown
US9368537B1 (en) * 2014-01-23 2016-06-14 James A. Holmes Integrated silicon carbide ultraviolet sensors and methods
US20160315211A1 (en) * 2015-02-20 2016-10-27 University Of South Carolina OPTICALLY SWITCHED GRAPHENE/4H-SiC JUNCTION BIPOLAR TRANSISTOR
CN107946355A (en) * 2017-03-02 2018-04-20 重庆中科渝芯电子有限公司 A kind of transverse direction high-voltage bipolar junction transistor and its manufacture method

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3504181A (en) * 1966-10-06 1970-03-31 Westinghouse Electric Corp Silicon carbide solid state ultraviolet radiation detector
EP0405045A1 (en) * 1989-06-28 1991-01-02 STMicroelectronics S.r.l. A mixed technology integrated circuit comprising CMOS structures and efficient lateral bipolar transistors with a high early voltage and fabrication thereof
US5093576A (en) * 1991-03-15 1992-03-03 Cree Research High sensitivity ultraviolet radiation detector
EP1253645A2 (en) * 2001-04-25 2002-10-30 Sanken Electric Co., Ltd. Lateral transistor having graded base region, semiconductor intergrated circuit and fabrication method thereof
US20030087466A1 (en) * 2001-11-06 2003-05-08 Yuqi Wang Phototransistor device
US6703647B1 (en) * 2002-04-22 2004-03-09 The United States Of America As Represented By The Secretary Of The Navy Triple base bipolar phototransistor
US20060261876A1 (en) * 2005-05-13 2006-11-23 Cree, Inc. Optically triggered wide bandgap bipolar power switching devices and circuits
US20130187256A1 (en) * 2012-01-23 2013-07-25 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US20140028387A1 (en) * 2012-07-25 2014-01-30 Jeffrey H. Saunders Monolithic integrated circuit chip integrating multiple devices
US20140084301A1 (en) * 2012-09-24 2014-03-27 International Business Machines Corporation Lateral silicon-on-insulator bipolar junction transistor radiation dosimeter
US9368537B1 (en) * 2014-01-23 2016-06-14 James A. Holmes Integrated silicon carbide ultraviolet sensors and methods
US20150349186A1 (en) * 2014-05-30 2015-12-03 Wispro Technology Consulting Corporation Limited Phototransistor with body-strapped base
US20160315211A1 (en) * 2015-02-20 2016-10-27 University Of South Carolina OPTICALLY SWITCHED GRAPHENE/4H-SiC JUNCTION BIPOLAR TRANSISTOR
US9318585B1 (en) * 2015-05-12 2016-04-19 International Business Machines Corporation Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown
CN107946355A (en) * 2017-03-02 2018-04-20 重庆中科渝芯电子有限公司 A kind of transverse direction high-voltage bipolar junction transistor and its manufacture method

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Analog Devices, 29 April 2014, Transistors, wiki.analog.com, [online], Available from: https://wiki.analog.com/university/courses/electronics/text/chapter-8?rev=1398779534 [Accessed 24 August 2018]. *
Bart Van Zeghbroeck, 2011, Bipolar Junction Transistors, eece.colorado.edu, [online], Available from: https://ecee.colorado.edu/~bart/book/book/chapter5/ch5_8.htm [Accessed 24 August 2018]. *

Also Published As

Publication number Publication date
GB2561391A (en) 2018-10-17
GB201705989D0 (en) 2017-05-31

Similar Documents

Publication Publication Date Title
IL284070A (en) drinking device
EP3655341C0 (en) DRINKING DEVICE
EP3596040A4 (en) POLYMORPHIC COMPOUNDS AND USES THEREOF
EP3588075A4 (en) HIGHLY SENSITIVE BIOSENSOR
SG11201913717RA (en) Substrate holding device
EP3721849A4 (en) AUXILIARY DEVICE
EP3635047A4 (en) AMORPHIC PROPYLENE-ETHYLENE COPOLYMERS
DK3414013T3 (en) Grinding roller device
EP3450067A4 (en) CHUCK DEVICE
GB2561390B (en) Silicon carbide transistor
DK3410085T3 (en) SPECTROPHOTOMETER DEVICE WITH MICROSIMIRRS
EP3546096A4 (en) CHUCK DEVICE
GB2567746B (en) Semiconductor device
EP3453648C0 (en) FEED DEVICE
EP3602091A4 (en) INTEGRATED SENSORS
PT3411893T (en) Installation device
EP3665094C0 (en) DRINKING BOTTLE
PL3604072T3 (en) Liftable carrying device
GB2568065B (en) Plumbing device
GB201721247D0 (en) Assay device
EP3533936A4 (en) TURN REGULATION DEVICE
GB201705983D0 (en) Silicon carbide integrated circuit
PL3284893T3 (en) Improved fixing device
DE102015213837A8 (en) The silicon carbide semiconductor device
GB201621369D0 (en) Plumbing device