[go: up one dir, main page]

GB2540299B - Vertical LED array element integrating LED epitaxial structures with LED package substrate - Google Patents

Vertical LED array element integrating LED epitaxial structures with LED package substrate

Info

Publication number
GB2540299B
GB2540299B GB1617443.5A GB201617443A GB2540299B GB 2540299 B GB2540299 B GB 2540299B GB 201617443 A GB201617443 A GB 201617443A GB 2540299 B GB2540299 B GB 2540299B
Authority
GB
United Kingdom
Prior art keywords
led
package substrate
array element
epitaxial structures
vertical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB1617443.5A
Other versions
GB201617443D0 (en
GB2540299A (en
Inventor
Shyan Chen Jen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Enraytek Optoelectronics Co Ltd
Original Assignee
Enraytek Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enraytek Optoelectronics Co Ltd filed Critical Enraytek Optoelectronics Co Ltd
Publication of GB201617443D0 publication Critical patent/GB201617443D0/en
Publication of GB2540299A publication Critical patent/GB2540299A/en
Application granted granted Critical
Publication of GB2540299B publication Critical patent/GB2540299B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10W90/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10W72/884—
GB1617443.5A 2014-04-29 2014-04-29 Vertical LED array element integrating LED epitaxial structures with LED package substrate Expired - Fee Related GB2540299B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2014/076510 WO2015165048A1 (en) 2014-04-29 2014-04-29 Vertical led array element integrating led epitaxial structures with led package substrate

Publications (3)

Publication Number Publication Date
GB201617443D0 GB201617443D0 (en) 2016-11-30
GB2540299A GB2540299A (en) 2017-01-11
GB2540299B true GB2540299B (en) 2018-04-11

Family

ID=54358008

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1617443.5A Expired - Fee Related GB2540299B (en) 2014-04-29 2014-04-29 Vertical LED array element integrating LED epitaxial structures with LED package substrate

Country Status (3)

Country Link
DE (1) DE112014006625T5 (en)
GB (1) GB2540299B (en)
WO (1) WO2015165048A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3667721A1 (en) * 2018-12-10 2020-06-17 IMEC vzw Method for fabricating an optical device

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040110316A1 (en) * 2002-11-20 2004-06-10 Mitsuhiko Ogihara Semiconductor device and method of manufacturing the same
CN101615611A (en) * 2008-07-30 2009-12-30 鹤山丽得电子实业有限公司 A kind of light-emitting diode chip for backlight unit and preparation method thereof
CN101685841A (en) * 2008-09-26 2010-03-31 台达电子工业股份有限公司 Light emitting diode chip
US20110127554A1 (en) * 2009-12-02 2011-06-02 Samsung Electronics Co., Ltd. Light emitting device and method of manufacturing the same
CN102456775A (en) * 2010-10-14 2012-05-16 晶元光电股份有限公司 Light emitting device and method for fabricating the same
CN102593275A (en) * 2011-01-13 2012-07-18 台湾积体电路制造股份有限公司 Method for manufacturing light-emitting diode packaging structure and light-emitting diode element
CN102593284A (en) * 2012-03-05 2012-07-18 映瑞光电科技(上海)有限公司 Methods for manufacturing isolation deep trench and high voltage LED chip
CN103415935A (en) * 2011-03-14 2013-11-27 皇家飞利浦有限公司 LED with vertical contacts redistributed for flip chip mounting

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040110316A1 (en) * 2002-11-20 2004-06-10 Mitsuhiko Ogihara Semiconductor device and method of manufacturing the same
CN101615611A (en) * 2008-07-30 2009-12-30 鹤山丽得电子实业有限公司 A kind of light-emitting diode chip for backlight unit and preparation method thereof
CN101685841A (en) * 2008-09-26 2010-03-31 台达电子工业股份有限公司 Light emitting diode chip
US20110127554A1 (en) * 2009-12-02 2011-06-02 Samsung Electronics Co., Ltd. Light emitting device and method of manufacturing the same
CN102456775A (en) * 2010-10-14 2012-05-16 晶元光电股份有限公司 Light emitting device and method for fabricating the same
CN102593275A (en) * 2011-01-13 2012-07-18 台湾积体电路制造股份有限公司 Method for manufacturing light-emitting diode packaging structure and light-emitting diode element
CN103415935A (en) * 2011-03-14 2013-11-27 皇家飞利浦有限公司 LED with vertical contacts redistributed for flip chip mounting
CN102593284A (en) * 2012-03-05 2012-07-18 映瑞光电科技(上海)有限公司 Methods for manufacturing isolation deep trench and high voltage LED chip

Also Published As

Publication number Publication date
DE112014006625T5 (en) 2017-02-09
GB201617443D0 (en) 2016-11-30
GB2540299A (en) 2017-01-11
WO2015165048A1 (en) 2015-11-05

Similar Documents

Publication Publication Date Title
GB2521727B (en) Array substrate
GB2548186B (en) Stacked semiconductor chip RGBZ sensor
GB2542319B (en) TFT array substrate
SG10201400390YA (en) Package structure
SG10201401622RA (en) Package structure
GB201710134D0 (en) Low temperaturepoly-silicon array substrate
EP3217438A4 (en) Semiconductor light-emitting element
PL3189254T3 (en) Sealing arrangement with pressure-activatable pre-tensioning element
EP3217439A4 (en) Semiconductor light-emitting element
PT3231254T (en) Led module
IL249732A0 (en) Sensor array
TWI560882B (en) Semiconductor structure
GB201407699D0 (en) A solar array
EP3276674A4 (en) Semiconductor light-emitting element
ZA201803964B (en) Tiled retrofeflector with mutli-stage dicing
EP3217440A4 (en) Semiconductor light-emitting element
GB201420531D0 (en) Semiconductor structure
TWI561461B (en) Epitaxial structure
TWM477045U (en) Package substrate
EP3101697A4 (en) Semiconductor light-emitting element
PL2960395T3 (en) Flat sealing element
GB201411817D0 (en) Thermoelectric module
GB2541342B (en) TFT array substrate structure
GB2529208B (en) Package assembly
PL3113960T3 (en) Fastening element

Legal Events

Date Code Title Description
789A Request for publication of translation (sect. 89(a)/1977)

Ref document number: 2015165048

Country of ref document: WO

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20200429