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GB2432245A - Systems and methods for adjusting programming thresholds of polymer memory cells - Google Patents

Systems and methods for adjusting programming thresholds of polymer memory cells

Info

Publication number
GB2432245A
GB2432245A GB0703977A GB0703977A GB2432245A GB 2432245 A GB2432245 A GB 2432245A GB 0703977 A GB0703977 A GB 0703977A GB 0703977 A GB0703977 A GB 0703977A GB 2432245 A GB2432245 A GB 2432245A
Authority
GB
United Kingdom
Prior art keywords
polymer memory
systems
memory cell
methods
memory cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB0703977A
Other versions
GB2432245B (en
GB0703977D0 (en
Inventor
Stuart Spitzer
Juri H Krieger
David Gaun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spansion LLC
Original Assignee
Spansion LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Spansion LLC filed Critical Spansion LLC
Publication of GB0703977D0 publication Critical patent/GB0703977D0/en
Publication of GB2432245A publication Critical patent/GB2432245A/en
Application granted granted Critical
Publication of GB2432245B publication Critical patent/GB2432245B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0097—Erasing, e.g. resetting, circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/009—Write using potential difference applied between cell electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/15—Current-voltage curve
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)

Abstract

Systems and methodologies are provided for adjusting threshold associated with a polymer memory cell's (215, 640) operation by applying thereupon a regulated electric field and/or voltage pulse width, during a post fabrication stage. Such customization of programming thresholds can typically be obtained at any cycle of programming the memory cell (215, 640), to increase flexibility in circuit design. Accordingly, the present invention supplies both a current-voltage domain, and/or a frequency-time domain, to facilitate adjusting the program thresholds of the polymer memory cell (215, 640).
GB0703977A 2004-08-17 2005-08-08 Polymer memory device with adjustable programming threshold Expired - Fee Related GB2432245B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/919,846 US7289353B2 (en) 2004-08-17 2004-08-17 Systems and methods for adjusting programming thresholds of polymer memory cells
PCT/US2005/028338 WO2006023337A1 (en) 2004-08-17 2005-08-08 Systems and methods for adjusting programming thresholds of polymer memory cells

Publications (3)

Publication Number Publication Date
GB0703977D0 GB0703977D0 (en) 2007-04-11
GB2432245A true GB2432245A (en) 2007-05-16
GB2432245B GB2432245B (en) 2008-03-19

Family

ID=35344710

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0703977A Expired - Fee Related GB2432245B (en) 2004-08-17 2005-08-08 Polymer memory device with adjustable programming threshold

Country Status (8)

Country Link
US (1) US7289353B2 (en)
JP (1) JP4750119B2 (en)
KR (1) KR20070040818A (en)
CN (2) CN103337254B (en)
DE (1) DE112005001983T5 (en)
GB (1) GB2432245B (en)
TW (1) TWI401684B (en)
WO (1) WO2006023337A1 (en)

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US7378682B2 (en) * 2005-02-07 2008-05-27 Spanson Llc Memory element using active layer of blended materials
US7660145B2 (en) * 2005-07-01 2010-02-09 Semiconductor Energy Laboratory Co., Ltd. Storage device and semiconductor device
US7935957B2 (en) * 2005-08-12 2011-05-03 Semiconductor Energy Laboratory Co., Ltd. Memory device and a semiconductor device
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US10134985B2 (en) 2006-10-20 2018-11-20 The Regents Of The University Of Michigan Non-volatile solid state resistive switching devices
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US7570520B2 (en) * 2006-12-27 2009-08-04 Sandisk Corporation Non-volatile storage system with initial programming voltage based on trial
US7564715B2 (en) * 2007-02-20 2009-07-21 Sandisk Corporation Variable initial program voltage magnitude for non-volatile storage
US7558101B1 (en) * 2007-12-14 2009-07-07 Spansion Llc Scan sensing method that improves sensing margins
KR20110086089A (en) 2008-10-20 2011-07-27 더 리젠츠 오브 더 유니버시티 오브 미시건 Silicon Nanoscale Crossbar Memory
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US9570678B1 (en) 2010-06-08 2017-02-14 Crossbar, Inc. Resistive RAM with preferental filament formation region and methods
US8946046B1 (en) 2012-05-02 2015-02-03 Crossbar, Inc. Guided path for forming a conductive filament in RRAM
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US8441835B2 (en) 2010-06-11 2013-05-14 Crossbar, Inc. Interface control for improved switching in RRAM
US8374018B2 (en) 2010-07-09 2013-02-12 Crossbar, Inc. Resistive memory using SiGe material
US8884261B2 (en) 2010-08-23 2014-11-11 Crossbar, Inc. Device switching using layered device structure
US8168506B2 (en) 2010-07-13 2012-05-01 Crossbar, Inc. On/off ratio for non-volatile memory device and method
US8947908B2 (en) 2010-11-04 2015-02-03 Crossbar, Inc. Hetero-switching layer in a RRAM device and method
US8467227B1 (en) 2010-11-04 2013-06-18 Crossbar, Inc. Hetero resistive switching material layer in RRAM device and method
US8569172B1 (en) 2012-08-14 2013-10-29 Crossbar, Inc. Noble metal/non-noble metal electrode for RRAM applications
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US8558212B2 (en) 2010-09-29 2013-10-15 Crossbar, Inc. Conductive path in switching material in a resistive random access memory device and control
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US9153623B1 (en) 2010-12-31 2015-10-06 Crossbar, Inc. Thin film transistor steering element for a non-volatile memory device
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CN102682838A (en) * 2011-03-17 2012-09-19 中国科学院微电子研究所 Programming Method of Organic Field Effect Transistor Memory
US8450710B2 (en) 2011-05-27 2013-05-28 Crossbar, Inc. Low temperature p+ silicon junction material for a non-volatile memory device
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US9620206B2 (en) 2011-05-31 2017-04-11 Crossbar, Inc. Memory array architecture with two-terminal memory cells
US8619459B1 (en) 2011-06-23 2013-12-31 Crossbar, Inc. High operating speed resistive random access memory
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US9627443B2 (en) 2011-06-30 2017-04-18 Crossbar, Inc. Three-dimensional oblique two-terminal memory with enhanced electric field
US9166163B2 (en) 2011-06-30 2015-10-20 Crossbar, Inc. Sub-oxide interface layer for two-terminal memory
US9564587B1 (en) 2011-06-30 2017-02-07 Crossbar, Inc. Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects
US8659929B2 (en) 2011-06-30 2014-02-25 Crossbar, Inc. Amorphous silicon RRAM with non-linear device and operation
WO2013015776A1 (en) 2011-07-22 2013-01-31 Crossbar, Inc. Seed layer for a p + silicon germanium material for a non-volatile memory device and method
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Also Published As

Publication number Publication date
CN101006516A (en) 2007-07-25
DE112005001983T5 (en) 2008-02-21
GB2432245B (en) 2008-03-19
GB0703977D0 (en) 2007-04-11
KR20070040818A (en) 2007-04-17
CN103337254A (en) 2013-10-02
WO2006023337A1 (en) 2006-03-02
US20060038982A1 (en) 2006-02-23
US7289353B2 (en) 2007-10-30
TW200623128A (en) 2006-07-01
TWI401684B (en) 2013-07-11
CN103337254B (en) 2017-04-12
JP4750119B2 (en) 2011-08-17
JP2008510264A (en) 2008-04-03

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Effective date: 20190808