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GB2432040B - Ion implant dose control - Google Patents

Ion implant dose control

Info

Publication number
GB2432040B
GB2432040B GB0700138A GB0700138A GB2432040B GB 2432040 B GB2432040 B GB 2432040B GB 0700138 A GB0700138 A GB 0700138A GB 0700138 A GB0700138 A GB 0700138A GB 2432040 B GB2432040 B GB 2432040B
Authority
GB
United Kingdom
Prior art keywords
time constant
ions
neutrals
ion beam
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0700138A
Other versions
GB2432040A (en
GB0700138D0 (en
Inventor
Marvin Farley
Takao Sakase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/792,394 external-priority patent/US6870170B1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to GB0700138A priority Critical patent/GB2432040B/en
Publication of GB0700138D0 publication Critical patent/GB0700138D0/en
Publication of GB2432040A publication Critical patent/GB2432040A/en
Application granted granted Critical
Publication of GB2432040B publication Critical patent/GB2432040B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30455—Correction during exposure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning
    • H01J2237/30488—Raster scan
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

This invention is concerned with the control of implanting ions into a substrate, such as doping semiconductor wafers. The ion beam is measured to ensure wafers are implanted with the correct, uniform ion dose. The incident ion beam comprises ions and neutrals, yet detectors measure only ions. The ions/neutrals ratio varies with the ion implanter's chamber pressure that in turn is known to rise and fall when the ion beam is on and off the wafer respectively, according to a characteristic time constant. This invention provides methods of correcting measured ionic currents to account for neutrals using the time constant. Initially an assumed time constant is used that is later improved by measuring the ionic current after a delay sufficient to allow the chamber pressure to recover to its base value. The time constant may also be improved by removing any quadratic variation in already determined true beam current values.
GB0700138A 2004-03-04 2005-02-16 Ion implant dose control Expired - Fee Related GB2432040B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB0700138A GB2432040B (en) 2004-03-04 2005-02-16 Ion implant dose control

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/792,394 US6870170B1 (en) 2004-03-04 2004-03-04 Ion implant dose control
GB0503224A GB2411764B (en) 2004-03-04 2005-02-16 Ion implant dose control
GB0700138A GB2432040B (en) 2004-03-04 2005-02-16 Ion implant dose control

Publications (3)

Publication Number Publication Date
GB0700138D0 GB0700138D0 (en) 2007-02-14
GB2432040A GB2432040A (en) 2007-05-09
GB2432040B true GB2432040B (en) 2007-11-28

Family

ID=37964950

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0700138A Expired - Fee Related GB2432040B (en) 2004-03-04 2005-02-16 Ion implant dose control

Country Status (1)

Country Link
GB (1) GB2432040B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0964426A2 (en) * 1998-06-11 1999-12-15 Eaton Corporation Ion dosage measurement apparatus for an ion beam implanter and method
US6297510B1 (en) * 1999-04-19 2001-10-02 Applied Materials, Inc. Ion implant dose control
WO2002025722A2 (en) * 2000-09-20 2002-03-28 Axcelis Technologies, Inc. Method and system for determining pressure compensation factors in an ion implanter

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0964426A2 (en) * 1998-06-11 1999-12-15 Eaton Corporation Ion dosage measurement apparatus for an ion beam implanter and method
US6297510B1 (en) * 1999-04-19 2001-10-02 Applied Materials, Inc. Ion implant dose control
WO2002025722A2 (en) * 2000-09-20 2002-03-28 Axcelis Technologies, Inc. Method and system for determining pressure compensation factors in an ion implanter

Also Published As

Publication number Publication date
GB2432040A (en) 2007-05-09
GB0700138D0 (en) 2007-02-14

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20100216