[go: up one dir, main page]

GB2418158A - InP single crystal, GaAs single crystal, and method for production thereof - Google Patents

InP single crystal, GaAs single crystal, and method for production thereof Download PDF

Info

Publication number
GB2418158A
GB2418158A GB0600232A GB0600232A GB2418158A GB 2418158 A GB2418158 A GB 2418158A GB 0600232 A GB0600232 A GB 0600232A GB 0600232 A GB0600232 A GB 0600232A GB 2418158 A GB2418158 A GB 2418158A
Authority
GB
United Kingdom
Prior art keywords
single crystal
production
inp
grown
raw material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB0600232A
Other versions
GB2418158B (en
GB0600232D0 (en
Inventor
Fumio Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Publication of GB0600232D0 publication Critical patent/GB0600232D0/en
Publication of GB2418158A publication Critical patent/GB2418158A/en
Application granted granted Critical
Publication of GB2418158B publication Critical patent/GB2418158B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A method for the production of an InP single crystal includes gradually cooling a molten raw material held in contact with a seed crystal to solidify the molten raw material from a lower part toward an upper part of an interior of a crucible and grow a single crystal, causing the seed crystal to possess an average dislocation density of less than 10000/cm<2> and assume substantially identical cross-sectional shape and size with a cross-sectional shape and size of a single crystal to be grown, and allowing the InP single crystal to be grown to retain a non-doped state or a state doped with Fe or Sn.

Description

GB 2418158 A continuation (74) Agent and/or Address for Service: (56) cont
fJ Cleveland YASUMASA OKADA ET AL INSTITUTE OF 40-43 Chancery Lane, LONDON, PHYSICS:"Dislocation elemination in vertical gradient WC2A 1JQ, United Kingdom freeze grown gas single crystals" GALLIUM ARSENIDE AND RELATED COMPOUNDS, vol. SYMP. 17, 24 September 1990 (1990-09-241, p61-66, XP000146745 figure 1 ASAHI T ET AL: "VGF CRYSTAL GROWTH AND
VAPOR-PHASE FE DOPING TECHNOLOGIES FOR SEMI
INSULATING 100MM DIAMETER INO SUBSTRATES" 1999 11TH. INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS.
MAY, 1999, NEW YORK, vol. CONF. 11, 16TH May 1999, p 249-254, XP000931439, ISBN: 0-7803-5563-6 YASUMASA OKADA ET AL: "MECHANISM OF A
REDUCTION OF DISLOCATION DENSITIES IN
VERTICAL-GRADIENT-FREEZE-GROWN GAS SINGLE
CRYSTALS" JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, vol. 29, no. 11 PART 2, 1 NOV 1990, p L1954-L1956, XP000232823, ISSN: 0021-4922 ZEMKE D ET AL: "GROWTH OF INP BULK CRYSTALS BY VGF: A COMPARITIVE STUDY OF DISLOCATION DENSITY AND NUMERICAL STRESS ANALYSIS"
PROCEEDINGS OF THE EIGHTH INTERNATIONAL
CONFERENCE ON INDIUM PHOSPHIDE AND RELATED
MATERIALS, NEW YORK, vol. CONF. 8, 21 April 1996, p47-49, XP000634431, ISBN: 0-7803-3284-9
(58) Field of Search by ISA:
INT CL C30B Other: EPO-lnternal, PAJ
GB0600232A 2003-07-17 2004-07-16 InP single crystal, GaAs single crystal, and method for production thereof Expired - Fee Related GB2418158B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003275987 2003-07-17
US48949403P 2003-07-24 2003-07-24
PCT/JP2004/010555 WO2005007939A1 (en) 2003-07-17 2004-07-16 InP SINGLE CRYSTAL, GaAs SINGLE CRYSTAL, AND METHOD FOR PRODUCTION THEREOF

Publications (3)

Publication Number Publication Date
GB0600232D0 GB0600232D0 (en) 2006-02-15
GB2418158A true GB2418158A (en) 2006-03-22
GB2418158B GB2418158B (en) 2007-05-30

Family

ID=34082363

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0600232A Expired - Fee Related GB2418158B (en) 2003-07-17 2004-07-16 InP single crystal, GaAs single crystal, and method for production thereof

Country Status (2)

Country Link
GB (1) GB2418158B (en)
WO (1) WO2005007939A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1739210B1 (en) * 2005-07-01 2012-03-07 Freiberger Compound Materials GmbH Method for production of doped semiconductor single crystal, and III-V semiconductor single crystal
US8329295B2 (en) 2008-07-11 2012-12-11 Freiberger Compound Materials Gmbh Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient
EP4119703A1 (en) 2013-03-26 2023-01-18 JX Nippon Mining & Metals Corp. Compound semiconductor wafer, photoelectric conversion element, and method for producing group iii-v compound semiconductor single crystals
EP4110975A4 (en) * 2020-02-28 2024-02-28 Axt, Inc. Low etch pit density, low slip line density, and low strain indium phosphide

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0340987A (en) * 1989-07-10 1991-02-21 Nippon Telegr & Teleph Corp <Ntt> Growing method for single crystal
EP0971052A1 (en) * 1998-07-07 2000-01-12 Mitsubishi Chemical Corporation P-type GaAs single crystal and method for manufacturing the same
EP0992618A1 (en) * 1998-03-31 2000-04-12 Japan Energy Corporation Method of manufacturing compound semiconductor single crystal

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0340987A (en) * 1989-07-10 1991-02-21 Nippon Telegr & Teleph Corp <Ntt> Growing method for single crystal
EP0992618A1 (en) * 1998-03-31 2000-04-12 Japan Energy Corporation Method of manufacturing compound semiconductor single crystal
EP0971052A1 (en) * 1998-07-07 2000-01-12 Mitsubishi Chemical Corporation P-type GaAs single crystal and method for manufacturing the same

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
ASAHI T ET AL: "VGF CRYSTAL GROWTH AND VAPOR-PHASE FE DOPING TECHNOLOGIES FOR SEMI INSULATING 100MM DIAMETER INO SUBSTRATES" 1999 11TH. INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS. MAY, 1999, NEW YORK, vol. CONF. 11, 16TH May 1999, p 249-254, XP000931439, ISBN: 0-7803-5563-6 *
GAULT: "A novel application of the vertical gradient freeze method to the growth of high quality crystals" JOURNAL OF CRYSTAL GROWTH, NORTH HOLLAND PUBLISHING CO. AMSTERDAM, NL, vol. 74, no. 3, 1986, p 491-506, XP002121188 ISSN: 022-0248 abstract *
YABUHARA Y ET AL: "High quality InP substrate growth by VCZ method" INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, IPRM '96., EIGHTH INTERNATIONAL CONFERENCE ON SHWABISCH-GMUND, GERMANY 21-25 APRIL 1996, NEW YORK, NY, USA, IEEE, US, 21 APRIL 1996 (1996-04-21), p 35-38, XP010157617, ISBN: 0-7803-3283 *
YASUMASA OKADA ET AL INSTITUTE OF PHYSICS:"Dislocation elemination in vertical gradient freeze grown gas single crystals" GALLIUM ARSENIDE AND RELATED COMPOUNDS, vol. SYMP. 17, 24 September 1990 (1990-09-24), p61-66, XP000146745 figure 1 *
YASUMASA OKADA ET AL: "MECHANISM OF A REDUCTION OF DISLOCATION DENSITIES IN VERTICAL-GRADIENT-FREEZE-GROWN GAS SINGLE CRYSTALS" JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, vol. 29, no. 11 PART 2, 1 NOV 1990, p L1954-L1956, XP000232823, ISSN: 0021-4922 *
ZEMKE D ET AL: "GROWTH OF INP BULK CRYSTALS BY VGF: A COMPARITIVE STUDY OF DISLOCATION DENSITY AND NUMERICAL STRESS ANALYSIS" PROCEEDINGS OF THE EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, NEW YORK, vol. CONF. 8, 21 April 1996, p47-49, XP000634431, ISBN: 0-7803-3284-9 *

Also Published As

Publication number Publication date
GB2418158B (en) 2007-05-30
GB0600232D0 (en) 2006-02-15
WO2005007939A1 (en) 2005-01-27

Similar Documents

Publication Publication Date Title
Basu A review on single crystal and thin film Si–Ge alloy: growth and applications
US7229498B2 (en) Nanostructures produced by phase-separation during growth of (III-V)1-x(IV2)x alloys
JPWO2010024392A1 (en) Method for producing silicon carbide single crystal
JPS60200900A (en) Semiconductor single crystal of group iii-v compound having low dislocation density
GB2418158A (en) InP single crystal, GaAs single crystal, and method for production thereof
JP4014411B2 (en) Group III nitride crystal manufacturing method
Bachmann et al. The preparation of Ga-rich GaxIn1− xSb alloy crystals
Yamada et al. Elimination of grown-in dislocations in In-doped liquid encapsulated Czochralski GaAs
Scheel Introduction to liquid phase epitaxy
US4500367A (en) LPE Growth on group III-V compound semiconductor substrates containing phosphorus
Uemura et al. LEC growth and characterization of undoped InP crystals
KR100499814B1 (en) Method for fabricating single crystal GaN substrate using GaN nanorods
Mauk et al. Solution growth of thick III–V antimonide alloy epilayers (InAsSb, InGaSb, InGaAsSb, AlGaAsSb, and InAsSbP) for “virtual substrates”
CN115976487B (en) In-situ encapsulated two-dimensional material and preparation method thereof
JP4006721B2 (en) Method for growing mixed crystal semiconductor single crystal
JPS6430110A (en) Superconductor
Young et al. Latest developments in VGF technology: GaAs, InP, and GaP
CN120758961A (en) An easy-to-peel hBN single crystal growth formula and growth method
JPH04362082A (en) Apparatus and method for producing compound semiconductor crystal
Boyer et al. Bridgman growth and characterization of bulk single crystals of Ga {sub 1 {minus} x} In {sub x} Sb for thermophotovoltaic applications
Zhang et al. Semiconducting Oxide and Nitride Nanowires
JPH0772120B2 (en) Method for producing Cr-doped semi-insulating gallium arsenide crystal
Koroglu et al. Einfeldt, S., see Roskowski, AM 241 (2002) 141 Ellison, A., see Zhang, J. 241 (2002) 421 Ellison, A., see Zhang, J. 241 (2002) 431 Erdem-S, enatalar, A., see Julide
STAVOLA et al. The 16 th International Conference on Defects in Semiconductors(Final Report, 1 May 1991- 30 Apr. 1992)
JPH02137792A (en) Production of iii-v compound semiconductor

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20080716