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GB2411292B - Semiconductor devices having field effect transistors with desired dopant concentration - Google Patents

Semiconductor devices having field effect transistors with desired dopant concentration

Info

Publication number
GB2411292B
GB2411292B GB0510245A GB0510245A GB2411292B GB 2411292 B GB2411292 B GB 2411292B GB 0510245 A GB0510245 A GB 0510245A GB 0510245 A GB0510245 A GB 0510245A GB 2411292 B GB2411292 B GB 2411292B
Authority
GB
United Kingdom
Prior art keywords
field effect
semiconductor devices
effect transistors
dopant concentration
desired dopant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0510245A
Other versions
GB0510245D0 (en
GB2411292A (en
Inventor
Paul Arthur Layman
Samir Chaudhry
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agere Systems LLC
Original Assignee
Agere Systems Guardian Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/968,388 external-priority patent/US20030064550A1/en
Application filed by Agere Systems Guardian Corp filed Critical Agere Systems Guardian Corp
Publication of GB0510245D0 publication Critical patent/GB0510245D0/en
Publication of GB2411292A publication Critical patent/GB2411292A/en
Application granted granted Critical
Publication of GB2411292B publication Critical patent/GB2411292B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0191—Manufacturing their doped wells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
GB0510245A 2001-09-28 2002-08-30 Semiconductor devices having field effect transistors with desired dopant concentration Expired - Fee Related GB2411292B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/968,388 US20030064550A1 (en) 2001-09-28 2001-09-28 Method of ion implantation for achieving desired dopant concentration
GB0220202A GB2383189B (en) 2001-09-28 2002-08-30 Method of ion implantation for achieving desired dopant concentration

Publications (3)

Publication Number Publication Date
GB0510245D0 GB0510245D0 (en) 2005-06-29
GB2411292A GB2411292A (en) 2005-08-24
GB2411292B true GB2411292B (en) 2006-03-29

Family

ID=34828663

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0510245A Expired - Fee Related GB2411292B (en) 2001-09-28 2002-08-30 Semiconductor devices having field effect transistors with desired dopant concentration

Country Status (1)

Country Link
GB (1) GB2411292B (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5905292A (en) * 1993-12-27 1999-05-18 Kabushiki Kaisha Toshiba Semiconductor device in which an increase in threshold voltage, resulting from back-gate bias effect is mitigated, and method of manufacturing the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5905292A (en) * 1993-12-27 1999-05-18 Kabushiki Kaisha Toshiba Semiconductor device in which an increase in threshold voltage, resulting from back-gate bias effect is mitigated, and method of manufacturing the same

Also Published As

Publication number Publication date
GB0510245D0 (en) 2005-06-29
GB2411292A (en) 2005-08-24

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20160830