[go: up one dir, main page]

GB2410375B - Semiconductor memory devices and methods for manufacturing the same using sidewall spacers - Google Patents

Semiconductor memory devices and methods for manufacturing the same using sidewall spacers

Info

Publication number
GB2410375B
GB2410375B GB0500294A GB0500294A GB2410375B GB 2410375 B GB2410375 B GB 2410375B GB 0500294 A GB0500294 A GB 0500294A GB 0500294 A GB0500294 A GB 0500294A GB 2410375 B GB2410375 B GB 2410375B
Authority
GB
United Kingdom
Prior art keywords
manufacturing
methods
same
semiconductor memory
memory devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0500294A
Other versions
GB0500294D0 (en
GB2410375A (en
Inventor
Byung-Jun Park
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR10-2002-0036414A external-priority patent/KR100434506B1/en
Priority claimed from KR10-2002-0037059A external-priority patent/KR100480602B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Priority claimed from GB0314707A external-priority patent/GB2392311B/en
Publication of GB0500294D0 publication Critical patent/GB0500294D0/en
Publication of GB2410375A publication Critical patent/GB2410375A/en
Application granted granted Critical
Publication of GB2410375B publication Critical patent/GB2410375B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H10P95/00—
GB0500294A 2002-06-27 2003-06-24 Semiconductor memory devices and methods for manufacturing the same using sidewall spacers Expired - Fee Related GB2410375B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2002-0036414A KR100434506B1 (en) 2002-06-27 2002-06-27 Semiconductor memory device and method for manufacturing the same
KR10-2002-0037059A KR100480602B1 (en) 2002-06-28 2002-06-28 Semiconductor memory device and method for manufacturing the same
GB0314707A GB2392311B (en) 2002-06-27 2003-06-24 Semiconductor memory devices and methods for manufacturing the same using sidewall spacers

Publications (3)

Publication Number Publication Date
GB0500294D0 GB0500294D0 (en) 2005-02-16
GB2410375A GB2410375A (en) 2005-07-27
GB2410375B true GB2410375B (en) 2005-11-30

Family

ID=34743278

Family Applications (5)

Application Number Title Priority Date Filing Date
GB0500290A Expired - Fee Related GB2410372B (en) 2002-06-27 2003-06-24 Semiconductor memory devices and methods for manufacturing the same using sidewall spacers
GB0500294A Expired - Fee Related GB2410375B (en) 2002-06-27 2003-06-24 Semiconductor memory devices and methods for manufacturing the same using sidewall spacers
GB0500295A Expired - Fee Related GB2410376B (en) 2002-06-27 2003-06-24 Semiconductor memory devices and methods for manufacturing the same using sidewall spacers
GB0500293A Expired - Fee Related GB2410374B (en) 2002-06-27 2003-06-24 Methods for manufacturing semiconductor memory using sidewall spacers
GB0500291A Expired - Fee Related GB2410373B (en) 2002-06-27 2003-06-24 Semi conductor memory devices and methods for manufacturing the same using sidewall spacers

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB0500290A Expired - Fee Related GB2410372B (en) 2002-06-27 2003-06-24 Semiconductor memory devices and methods for manufacturing the same using sidewall spacers

Family Applications After (3)

Application Number Title Priority Date Filing Date
GB0500295A Expired - Fee Related GB2410376B (en) 2002-06-27 2003-06-24 Semiconductor memory devices and methods for manufacturing the same using sidewall spacers
GB0500293A Expired - Fee Related GB2410374B (en) 2002-06-27 2003-06-24 Methods for manufacturing semiconductor memory using sidewall spacers
GB0500291A Expired - Fee Related GB2410373B (en) 2002-06-27 2003-06-24 Semi conductor memory devices and methods for manufacturing the same using sidewall spacers

Country Status (1)

Country Link
GB (5) GB2410372B (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5721154A (en) * 1996-06-18 1998-02-24 Vanguard International Semiconductor Method for fabricating a four fin capacitor structure
GB2321771A (en) * 1996-08-16 1998-08-05 United Microelectronics Corp Stacked capacitor
US5854105A (en) * 1997-11-05 1998-12-29 Vanguard International Semiconductor Corporation Method for making dynamic random access memory cells having double-crown stacked capacitors with center posts
US5869861A (en) * 1995-09-11 1999-02-09 Vanguard International Semiconductor Corporation Coaxial capacitor for DRAM memory cell
US5913119A (en) * 1998-06-26 1999-06-15 Vanguard Int Semiconduct Corp Method of selective growth of a hemispherical grain silicon layer on the outer sides of a crown shaped DRAM capacitor structure
US6201273B1 (en) * 1996-02-08 2001-03-13 Taiwan Semiconductor Manufacturing Company Structure for a double wall tub shaped capacitor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6063656A (en) * 1997-04-18 2000-05-16 Micron Technology, Inc. Cell capacitors, memory cells, memory arrays, and method of fabrication
US6025624A (en) * 1998-06-19 2000-02-15 Micron Technology, Inc. Shared length cell for improved capacitance

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5869861A (en) * 1995-09-11 1999-02-09 Vanguard International Semiconductor Corporation Coaxial capacitor for DRAM memory cell
US6201273B1 (en) * 1996-02-08 2001-03-13 Taiwan Semiconductor Manufacturing Company Structure for a double wall tub shaped capacitor
US5721154A (en) * 1996-06-18 1998-02-24 Vanguard International Semiconductor Method for fabricating a four fin capacitor structure
GB2321771A (en) * 1996-08-16 1998-08-05 United Microelectronics Corp Stacked capacitor
US5854105A (en) * 1997-11-05 1998-12-29 Vanguard International Semiconductor Corporation Method for making dynamic random access memory cells having double-crown stacked capacitors with center posts
US5913119A (en) * 1998-06-26 1999-06-15 Vanguard Int Semiconduct Corp Method of selective growth of a hemispherical grain silicon layer on the outer sides of a crown shaped DRAM capacitor structure

Also Published As

Publication number Publication date
GB0500294D0 (en) 2005-02-16
GB2410372A (en) 2005-07-27
GB2410374A (en) 2005-07-27
GB0500293D0 (en) 2005-02-16
GB2410374B (en) 2005-11-30
GB2410372B (en) 2005-11-30
GB0500290D0 (en) 2005-02-16
GB2410373B (en) 2006-03-22
GB2410375A (en) 2005-07-27
GB0500291D0 (en) 2005-02-16
GB2410376B (en) 2005-11-30
GB0500295D0 (en) 2005-02-16
GB2410373A (en) 2005-07-27
GB2410376A (en) 2005-07-27

Similar Documents

Publication Publication Date Title
GB2392311B (en) Semiconductor memory devices and methods for manufacturing the same using sidewall spacers
TWI348218B (en) Semiconductor chip and method for manufacturing the same
GB2387967B (en) Semiconductor device and method of manufacturing the same
AU2003252675A1 (en) Nonvolatile semiconductor storage device and manufacturing method
TWI340471B (en) Semiconductor device and manufacturing method thereof
AU2003211857A1 (en) Semiconductor device and its manufacturing method
AU2003211888A1 (en) Semiconductor device and its manufacturing method
AU2003280487A1 (en) Semiconductor device and its manufacturing method
EP1329956A3 (en) Semiconductor device and its manufacturing method
AU2003220830A1 (en) Semiconductor manufacturing method and device thereof
AU2003226646A8 (en) Semiconductor device
AU2003244275A1 (en) Semiconductor device and its manufacturing method
AU2003234812A8 (en) Semiconductor device
GB0312512D0 (en) Termination structures for semiconductor devices and the manufacture thereof
TWI348216B (en) Manufacturing method for semiconductor device and semiconductor device
AU2003254947A1 (en) Semiconductor ferroelectric storage device and its manufacturing method
AU2003236254A1 (en) Semiconductor device and its manufacturing method
AU2003207387A1 (en) Organic semiconductor device and method for manufacturing the same
GB0501132D0 (en) Semiconductor device
GB2392557B (en) Semiconductor device and method of manufacturing the same
AU2003294845A1 (en) Semiconductor memory and fabrication method
AU2003235175A1 (en) Semiconductor device and its manufacturing method
AU2003211950A1 (en) Semiconductor device and its manufacturing method
AU2003221000A1 (en) Semiconductor device and its manufacturing method
GB2374705B (en) Semiconductor memory device and manufacturing method thereof

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20090624