Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B12/00—Dynamic random access memory [DRAM] devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D1/00—Resistors, capacitors or inductors
  • H10D1/01—Manufacture or treatment
  • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
  • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B12/00—Dynamic random access memory [DRAM] devices
  • H10B12/01—Manufacture or treatment
  • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
  • H10B12/03—Making the capacitor or connections thereto
  • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
  • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D1/00—Resistors, capacitors or inductors
  • H10D1/60—Capacitors
  • H10D1/68—Capacitors having no potential barriers
  • H10D1/692—Electrodes
  • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
  • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B12/00—Dynamic random access memory [DRAM] devices
  • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
  • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
  • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
• • H10W20/0698—

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• Engineering & Computer Science (AREA)
• Manufacturing & Machinery (AREA)
• Semiconductor Memories (AREA)

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Family Applications (1)

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Citations (5)

• 2003
  • 2003-04-03 KR KR10-2003-0020989A patent/KR100522544B1/en not_active Expired - Fee Related
  • 2003-06-19 TW TW092116678A patent/TWI291231B/en not_active IP Right Cessation
  • 2003-06-25 CN CNB031478204A patent/CN100468738C/en not_active Expired - Lifetime
  • 2003-06-30 JP JP2003188404A patent/JP2004311918A/en active Pending
  • 2003-10-16 DE DE10348200A patent/DE10348200A1/en not_active Ceased
  • 2003-10-21 GB GB0324534A patent/GB2400236B/en not_active Expired - Lifetime

Patent Citations (5)

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