GB2486314B - A field effect transistor - Google Patents

A field effect transistor

Info

Publication number: GB2486314B
Authority: GB; United Kingdom
Prior art keywords: field effect; effect transistor; transistor; field; effect
Prior art date: 2010-12-01
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

GB1120608.3A

Other versions

GB201120608D0 (en

GB2486314A (en

Inventor

Richard John Lang

Christopher Maxwell Snowden

Richard Stuart Balmer

Paul Gideon Huggett

James Pilkington

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Diamond Microwave Devices Ltd

Original Assignee

Diamond Microwave Devices Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2010-12-01

Filing date

2011-11-30

Publication date

2013-04-10

2011-11-30 Application filed by Diamond Microwave Devices Ltd filed Critical Diamond Microwave Devices Ltd

2012-01-11 Publication of GB201120608D0 publication Critical patent/GB201120608D0/en

2012-06-13 Publication of GB2486314A publication Critical patent/GB2486314A/en

2013-04-10 Application granted granted Critical

2013-04-10 Publication of GB2486314B publication Critical patent/GB2486314B/en

Status Expired - Fee Related legal-status Critical Current

2031-11-30 Anticipated expiration legal-status Critical

Classifications

- H10P50/00—
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/228—Channel regions of field-effect devices of FETs having delta-doped channels
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/8303—Diamond
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
- H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor

GB1120608.3A 2010-12-01 2011-11-30 A field effect transistor Expired - Fee Related GB2486314B (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US41873610P	2010-12-01	2010-12-01
GBGB1020326.3A GB201020326D0 (en)	2010-12-01	2010-12-01	A field effect transistor

Publications (3)

Publication Number	Publication Date
GB201120608D0 GB201120608D0 (en)	2012-01-11
GB2486314A GB2486314A (en)	2012-06-13
GB2486314B true GB2486314B (en)	2013-04-10

Family

ID=43500900

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
GBGB1020326.3A Ceased GB201020326D0 (en)	2010-12-01	2010-12-01	A field effect transistor
GB1120608.3A Expired - Fee Related GB2486314B (en)	2010-12-01	2011-11-30	A field effect transistor

Family Applications Before (1)

Application Number	Title	Priority Date	Filing Date
GBGB1020326.3A Ceased GB201020326D0 (en)	2010-12-01	2010-12-01	A field effect transistor

Country Status (2)

Country	Link
GB (2)	GB201020326D0 (en)
WO (1)	WO2012072646A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP3432361B1 (en) *	2017-07-19	2022-05-04	Centre National De La Recherche Scientifique	Diamond mis transistor
FR3160512A1 (en) *	2024-03-25	2025-09-26	Soitec	Monolithic device including a transistor and a capacitor cointegrated on a diamond-based substrate, and method of manufacturing such a device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20080099768A1 (en) *	2005-04-29	2008-05-01	Scarsbrook Geoffrey A	Diamond Transistor And Method Of Manufacture Thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2765067B2 (en) *	1989-07-06	1998-06-11	住友電気工業株式会社	Ohmic connection electrode of P-type semiconductor diamond
US5382809A (en) *	1992-09-14	1995-01-17	Sumitomo Electric Industries, Ltd.	Semiconductor device including semiconductor diamond
JP2002057167A (en) *	2000-08-10	2002-02-22	Kobe Steel Ltd	Semiconductor element and manufacturing method thereof

2010
- 2010-12-01 GB GBGB1020326.3A patent/GB201020326D0/en not_active Ceased
2011
- 2011-11-29 WO PCT/EP2011/071316 patent/WO2012072646A1/en not_active Ceased
- 2011-11-30 GB GB1120608.3A patent/GB2486314B/en not_active Expired - Fee Related

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20080099768A1 (en) *	2005-04-29	2008-05-01	Scarsbrook Geoffrey A	Diamond Transistor And Method Of Manufacture Thereof

Also Published As

Publication number	Publication date
GB201120608D0 (en)	2012-01-11
WO2012072646A1 (en)	2012-06-07
GB201020326D0 (en)	2011-01-12
GB2486314A (en)	2012-06-13

Publication	Publication Date	Title
GB2497258B (en)	2014-02-26	Nanowire field effect transistors
GB201003667D0 (en)	2010-04-21	Injection devices
ZA201205186B (en)	2013-09-25	Device
PL2546975T3 (en)	2016-12-30	Sunlight-tracking device
GB201004106D0 (en)	2010-04-28	Device
GB201005963D0 (en)	2010-05-26	Device
PT2361855T (en)	2017-06-07	Shelf-serving device
GB201016209D0 (en)	2010-11-10	Novel device
IL224507A (en)	2015-07-30	Next-instruction-type field
GB201020209D0 (en)	2011-01-12	Device
GB201102726D0 (en)	2011-03-30	Positioning device
PL2558672T3 (en)	2015-06-30	Ground-drilling device
GB201007084D0 (en)	2010-06-09	POsitioning devices
PL2357307T3 (en)	2019-03-29	Sectional gate
GB201015831D0 (en)	2010-10-27	Device
GB2486314B (en)	2013-04-10	A field effect transistor
GB2485381B (en)	2015-08-12	Device
GB201106772D0 (en)	2011-06-01	Transistors
GB201020887D0 (en)	2011-01-26	Device
PL2353358T3 (en)	2013-04-30	Agricultural device
PL2353359T3 (en)	2017-10-31	Agricultural device
GB201119972D0 (en)	2012-01-04	Transistor devices
TWM392895U (en)	2010-11-21	Leak-stopping device
TWM385358U (en)	2010-08-01	Anion-generating device
GB201007549D0 (en)	2010-06-23	Anti-wheelie device

Legal Events

Date	Code	Title	Description
2017-07-26	PCNP	Patent ceased through non-payment of renewal fee	Effective date: 20161130