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GB2479893B - A transistor and a method for operating the same - Google Patents

A transistor and a method for operating the same

Info

Publication number
GB2479893B
GB2479893B GB1007018.3A GB201007018A GB2479893B GB 2479893 B GB2479893 B GB 2479893B GB 201007018 A GB201007018 A GB 201007018A GB 2479893 B GB2479893 B GB 2479893B
Authority
GB
United Kingdom
Prior art keywords
transistor
operating
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB1007018.3A
Other versions
GB2479893A (en
GB201007018D0 (en
Inventor
Genhua Pan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plymouth University
Original Assignee
Plymouth University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plymouth University filed Critical Plymouth University
Priority to GB1007018.3A priority Critical patent/GB2479893B/en
Publication of GB201007018D0 publication Critical patent/GB201007018D0/en
Publication of GB2479893A publication Critical patent/GB2479893A/en
Application granted granted Critical
Publication of GB2479893B publication Critical patent/GB2479893B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H10D64/011
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L29/435
    • H01L29/66984
    • H01L29/82
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/385Devices using spin-polarised carriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40Devices controlled by magnetic fields
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/605Source, drain, or gate electrodes for FETs comprising highly resistive materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
GB1007018.3A 2010-04-27 2010-04-27 A transistor and a method for operating the same Expired - Fee Related GB2479893B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB1007018.3A GB2479893B (en) 2010-04-27 2010-04-27 A transistor and a method for operating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1007018.3A GB2479893B (en) 2010-04-27 2010-04-27 A transistor and a method for operating the same

Publications (3)

Publication Number Publication Date
GB201007018D0 GB201007018D0 (en) 2010-06-09
GB2479893A GB2479893A (en) 2011-11-02
GB2479893B true GB2479893B (en) 2012-05-16

Family

ID=42270905

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1007018.3A Expired - Fee Related GB2479893B (en) 2010-04-27 2010-04-27 A transistor and a method for operating the same

Country Status (1)

Country Link
GB (1) GB2479893B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8748957B2 (en) * 2012-01-05 2014-06-10 Quantum Devices, Llc Coherent spin field effect transistor
KR102071363B1 (en) * 2018-07-30 2020-01-30 고려대학교 산학협력단 Junctionless Field Effect Transistor with Metal-Interlayer-Semiconductor Structure and Method thereof
JP6806200B1 (en) * 2019-08-08 2021-01-06 Tdk株式会社 Magnetoresistive element and Whistler alloy
CN114975767B (en) * 2021-02-25 2025-08-26 华为技术有限公司 A spin wave logic device and related circuit

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050117391A1 (en) * 2003-03-11 2005-06-02 Hiroaki Yoda Magnetic random access memory
WO2005104240A1 (en) * 2004-04-27 2005-11-03 Agency For Science, Technology And Research Magneto-electric field effect transistor for spintronic applications
JP2007165786A (en) * 2005-12-16 2007-06-28 Toshiba Corp Field effect transistor, integrated circuit, and memory
US20100072528A1 (en) * 2008-09-24 2010-03-25 Tomoaki Inokuchi Spin transistor, integrated circuit, and magnetic memory

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050117391A1 (en) * 2003-03-11 2005-06-02 Hiroaki Yoda Magnetic random access memory
WO2005104240A1 (en) * 2004-04-27 2005-11-03 Agency For Science, Technology And Research Magneto-electric field effect transistor for spintronic applications
JP2007165786A (en) * 2005-12-16 2007-06-28 Toshiba Corp Field effect transistor, integrated circuit, and memory
US20100072528A1 (en) * 2008-09-24 2010-03-25 Tomoaki Inokuchi Spin transistor, integrated circuit, and magnetic memory

Also Published As

Publication number Publication date
GB2479893A (en) 2011-11-02
GB201007018D0 (en) 2010-06-09

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20160427