GB2450037B - Schottky diode - Google Patents
Schottky diodeInfo
- Publication number
- GB2450037B GB2450037B GB0817102A GB0817102A GB2450037B GB 2450037 B GB2450037 B GB 2450037B GB 0817102 A GB0817102 A GB 0817102A GB 0817102 A GB0817102 A GB 0817102A GB 2450037 B GB2450037 B GB 2450037B
- Authority
- GB
- United Kingdom
- Prior art keywords
- schottky diode
- schottky
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H01L29/47—
-
- H01L29/872—
-
- H10D64/0121—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/051—Manufacture or treatment of Schottky diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0817102A GB2450037B (en) | 2004-03-30 | 2005-03-29 | Schottky diode |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/814,673 US6972470B2 (en) | 2004-03-30 | 2004-03-30 | Dual metal Schottky diode |
| GB0817102A GB2450037B (en) | 2004-03-30 | 2005-03-29 | Schottky diode |
| GB0506276A GB2412787B (en) | 2004-03-30 | 2005-03-29 | Dual metal schottky diode |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB0817102D0 GB0817102D0 (en) | 2008-10-29 |
| GB2450037A GB2450037A (en) | 2008-12-10 |
| GB2450037B true GB2450037B (en) | 2009-05-27 |
Family
ID=40018388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0817102A Expired - Fee Related GB2450037B (en) | 2004-03-30 | 2005-03-29 | Schottky diode |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2450037B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7915703B2 (en) * | 2009-05-13 | 2011-03-29 | Cree, Inc. | Schottky diodes containing high barrier metal islands in a low barrier metal layer and methods of forming the same |
| CN103904133B (en) * | 2014-03-19 | 2017-01-18 | 中航(重庆)微电子有限公司 | Schottky diode balancing forward voltage drop and reverse leakage current and preparing method |
| CN104916864B (en) * | 2015-05-08 | 2018-01-16 | 深圳藈花新能源科技有限公司 | The height that a kind of bipolar template transitionality unit lithium battery of Cu-Al bimetal and its series connection are formed forces down changeable internal damp bvattery heap and method for packing |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1188082A (en) * | 1967-04-05 | 1970-04-15 | Hitachi Ltd | Method of making Semiconductor Device and Semiconductor Device made thereby |
| GB1289651A (en) * | 1970-01-20 | 1972-09-20 | ||
| GB1312171A (en) * | 1970-05-12 | 1973-04-04 | Siemens Ag | Semiconductor arrangements for use as fixed value stores |
| GB1401554A (en) * | 1972-04-14 | 1975-07-16 | Ibm | Met-semiconductor junction devices |
| US4096622A (en) * | 1975-07-31 | 1978-06-27 | General Motors Corporation | Ion implanted Schottky barrier diode |
| JPH04365378A (en) * | 1991-06-13 | 1992-12-17 | Nec Corp | Semiconductor integrated circuit |
-
2005
- 2005-03-29 GB GB0817102A patent/GB2450037B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1188082A (en) * | 1967-04-05 | 1970-04-15 | Hitachi Ltd | Method of making Semiconductor Device and Semiconductor Device made thereby |
| GB1289651A (en) * | 1970-01-20 | 1972-09-20 | ||
| GB1312171A (en) * | 1970-05-12 | 1973-04-04 | Siemens Ag | Semiconductor arrangements for use as fixed value stores |
| GB1401554A (en) * | 1972-04-14 | 1975-07-16 | Ibm | Met-semiconductor junction devices |
| US4096622A (en) * | 1975-07-31 | 1978-06-27 | General Motors Corporation | Ion implanted Schottky barrier diode |
| JPH04365378A (en) * | 1991-06-13 | 1992-12-17 | Nec Corp | Semiconductor integrated circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2450037A (en) | 2008-12-10 |
| GB0817102D0 (en) | 2008-10-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20210329 |