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GB2339638B - Charge pump circuit for high side switch - Google Patents

Charge pump circuit for high side switch

Info

Publication number
GB2339638B
GB2339638B GB9924499A GB9924499A GB2339638B GB 2339638 B GB2339638 B GB 2339638B GB 9924499 A GB9924499 A GB 9924499A GB 9924499 A GB9924499 A GB 9924499A GB 2339638 B GB2339638 B GB 2339638B
Authority
GB
United Kingdom
Prior art keywords
charge pump
side switch
high side
pump circuit
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9924499A
Other versions
GB9924499D0 (en
GB2339638A (en
Inventor
Bruno C Nadd
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/420,301 external-priority patent/US5672992A/en
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of GB9924499D0 publication Critical patent/GB9924499D0/en
Publication of GB2339638A publication Critical patent/GB2339638A/en
Application granted granted Critical
Publication of GB2339638B publication Critical patent/GB2339638B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06Modifications for ensuring a fully conducting state
    • H03K17/063Modifications for ensuring a fully conducting state in field-effect transistor switches
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of DC power input into DC power output
    • H02M3/02Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/161Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Dc-Dc Converters (AREA)
GB9924499A 1995-04-11 1996-04-10 Charge pump circuit for high side switch Expired - Fee Related GB2339638B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/420,301 US5672992A (en) 1995-04-11 1995-04-11 Charge pump circuit for high side switch
GB9607460A GB2299904B (en) 1995-04-11 1996-04-10 Charge pump circuit for high side switch

Publications (3)

Publication Number Publication Date
GB9924499D0 GB9924499D0 (en) 1999-12-15
GB2339638A GB2339638A (en) 2000-02-02
GB2339638B true GB2339638B (en) 2000-03-22

Family

ID=26309092

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9924499A Expired - Fee Related GB2339638B (en) 1995-04-11 1996-04-10 Charge pump circuit for high side switch

Country Status (1)

Country Link
GB (1) GB2339638B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10051936B4 (en) 2000-10-19 2004-10-14 Infineon Technologies Ag Voltage pump with switch-on control
US7079130B2 (en) 2001-05-09 2006-07-18 Clare Micronix Integrated Systems, Inc. Method for periodic element voltage sensing to control precharge
US7079131B2 (en) 2001-05-09 2006-07-18 Clare Micronix Integrated Systems, Inc. Apparatus for periodic element voltage sensing to control precharge
WO2003034383A2 (en) 2001-10-19 2003-04-24 Clare Micronix Integrated Systems, Inc. Drive circuit for adaptive control of precharge current and method therefor
DE10334066A1 (en) 2003-07-25 2005-02-24 Infineon Technologies Ag Circuit arrangement for voltage regulation and method for operating a Schaltunsanordnung for Spannugsregelung
CN100593908C (en) * 2003-12-11 2010-03-10 睦塞德技术公司 High output impedance charge pump for PLL/DLL
CN106575131B (en) 2015-02-25 2019-08-09 富士电机株式会社 Reference voltage generating circuit and semiconductor device

Also Published As

Publication number Publication date
GB9924499D0 (en) 1999-12-15
GB2339638A (en) 2000-02-02

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20040410