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GB2338594B - A method of forming a selective metal layer - Google Patents

A method of forming a selective metal layer

Info

Publication number
GB2338594B
GB2338594B GB9822332A GB9822332A GB2338594B GB 2338594 B GB2338594 B GB 2338594B GB 9822332 A GB9822332 A GB 9822332A GB 9822332 A GB9822332 A GB 9822332A GB 2338594 B GB2338594 B GB 2338594B
Authority
GB
United Kingdom
Prior art keywords
forming
metal layer
selective metal
selective
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB9822332A
Other versions
GB9822332D0 (en
GB2338594A (en
Inventor
Sang-Bom Kang
Yun-Sook Chae
Sang-In Lee
Hyun-Seok Lim
Mee-Young Yoon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9822332D0 publication Critical patent/GB9822332D0/en
Publication of GB2338594A publication Critical patent/GB2338594A/en
Application granted granted Critical
Publication of GB2338594B publication Critical patent/GB2338594B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • H10W20/057—
    • H10W20/065—
    • H10W20/066—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Chemical Vapour Deposition (AREA)
GB9822332A 1998-06-16 1998-10-13 A method of forming a selective metal layer Expired - Lifetime GB2338594B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR19980022579 1998-06-16

Publications (3)

Publication Number Publication Date
GB9822332D0 GB9822332D0 (en) 1998-12-09
GB2338594A GB2338594A (en) 1999-12-22
GB2338594B true GB2338594B (en) 2003-04-16

Family

ID=19539673

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9822332A Expired - Lifetime GB2338594B (en) 1998-06-16 1998-10-13 A method of forming a selective metal layer

Country Status (5)

Country Link
JP (1) JP4162794B2 (en)
CN (1) CN1133203C (en)
DE (1) DE19848444A1 (en)
GB (1) GB2338594B (en)
TW (1) TW403991B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19929306A1 (en) * 1999-06-25 2001-04-05 Infineon Technologies Ag Process for the production of a structured precious metal layer
US6969539B2 (en) 2000-09-28 2005-11-29 President And Fellows Of Harvard College Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide
JP3863391B2 (en) 2001-06-13 2006-12-27 Ｎｅｃエレクトロニクス株式会社 Semiconductor device
US10170321B2 (en) * 2017-03-17 2019-01-01 Applied Materials, Inc. Aluminum content control of TiAIN films
JP7296002B2 (en) * 2018-11-15 2023-06-21 日機装株式会社 Semiconductor light emitting device and method for manufacturing semiconductor light emitting device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5622888A (en) * 1994-11-09 1997-04-22 Nec Corporation Method of manufacturing a semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60113928A (en) * 1983-11-25 1985-06-20 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
JPS63140525A (en) * 1986-12-02 1988-06-13 Sharp Corp Manufacture of semiconductor device
JPH02304928A (en) * 1989-05-19 1990-12-18 Nec Corp Forming method of wiring

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5622888A (en) * 1994-11-09 1997-04-22 Nec Corporation Method of manufacturing a semiconductor device

Also Published As

Publication number Publication date
JP4162794B2 (en) 2008-10-08
TW403991B (en) 2000-09-01
GB9822332D0 (en) 1998-12-09
JP2000022087A (en) 2000-01-21
DE19848444A1 (en) 1999-12-23
CN1133203C (en) 2003-12-31
GB2338594A (en) 1999-12-22
CN1239320A (en) 1999-12-22

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